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31. 发明专利

JP2007250967A Plasma treating apparatus and method, and focus ring 审中-公开
标题翻译：等离子体处理装置和方法，聚焦环
公开(公告)号：JP2007250967A
公开(公告)日：2007-09-27
申请号：JP2006074372
申请日：2006-03-17
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOSHIISHI AKIRA
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To reduce the occurrence of deposition on the lower surface of a peripheral section when performing the plasma treatment of a substrate to be treated, such as a semiconductor wafer.
SOLUTION: When the substrate W to be treated is placed on a placement table 11 arranged in a treatment chamber 10, and plasma is generated in the treatment chamber 10 by giving high-frequency voltages for treating the substrate W to be treated, an electric field for accelerating ions generated by plasma toward the lower surface of the periphery of the substrate W to be treated is formed at the lower section of the periphery of the substrate W to be treated placed on the placement table 11, thus reducing the generation of deposition by allowing the ions to collide with the lower surface of the periphery of the substrate W to be treated.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：为了减少对半导体晶片等被处理基板进行等离子体处理时的周边部分的下表面的沉积的发生。解决方案：当要处理的基板W放置在布置在处理室10中的放置台11上时，通过施加用于处理要处理的基板W的高频电压在处理室10中产生等离子体，在被处置基板W的周围的下部形成有用于将由等离子体产生的离子加速到待处理基板W的周围的下表面的电场，从而减少了产生通过允许离子与待处理的基板W的周边的下表面碰撞来进行沉积。版权所有（C）2007，JPO＆INPIT

32. 发明专利

JP2007250838A Plasma treating apparatus and electrode used for the same 有权
标题翻译：用于其的等离子体处理装置和电极
公开(公告)号：JP2007250838A
公开(公告)日：2007-09-27
申请号：JP2006072384
申请日：2006-03-16
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOSHIISHI AKIRA , SUZUKI TAKASHI
IPC分类号： H01L21/3065 , C23C16/505 , H01L21/205 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To generate extremely uniform plasma by reducing nonuniformity in electric field distribution on the surface of an electrode in a wide range from the center to periphery. SOLUTION: An upper electrode 300 comprises: an electrode plate 310 that opposes a susceptor 116 for composing a lower electrode; and an electrode support 320 that is joined to a surface at a side opposite to the lower electrode side of the electrode plate and supports the electrode plate. A cavity section 330 in a shape where the height differs between the center and periphery is provided on the junction surface with the electrode plate in the electrode support. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过减小从中心到周边的宽范围内的电极表面上的电场分布的不均匀性来产生极均匀的等离子体。解决方案：上电极300包括：电极板310，其与用于构成下电极的基座116相对; 以及与电极板的下电极侧相反侧的表面接合并支撑电极板的电极支撑体320。在与电极支撑体中的电极板的接合面上设置有在中心和周边之间高度不同的形状的空腔部分330。版权所有（C）2007，JPO＆INPIT

33. 发明专利

JP2006270017A Plasma etching system and method, and computer-readable storage medium 有权
标题翻译：等离子体蚀刻系统和方法以及计算机可读存储介质
公开(公告)号：JP2006270017A
公开(公告)日：2006-10-05
申请号：JP2005181131
申请日：2005-06-21
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOSHIISHI AKIRA , SUGIMOTO MASARU , HIUGA KUNIHIKO , KOBAYASHI NORIYUKI , KOSHIMIZU CHISHIO , OTANI RYUJI , KIBI KAZUO , SAITO MASASHI , MATSUMOTO NAOKI , IWATA MANABU , YANO DAISUKE , YAMAZAWA YOHEI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma etching system in which etching can be carried out with high selection ratio, while sustaining high plasma resistance of the organic mask layer, such as resist layer, eliminating sticking of deposits to electrode effectively, and the plasma density can be controlled. SOLUTION: An upper electrode 34 and a lower electrode 16 for supporting a wafer are arranged facing each other in a chamber 10, the upper electrode 34 is connected with a first high-frequency power supply 48 for applying a first high-frequency power of relatively high frequency, the lower electrode 16 is connected to a second high-frequency power supply 90 for applying a second high-frequency power of relatively low frequency, the upper electrode 34 is connected with a variable DC power supply 50 and plasma etching is carried out, by supplying processing gas into the chamber 10 and generating plasma. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供等离子体蚀刻系统，其中可以以高选择比进行蚀刻，同时保持诸如抗蚀剂层的有机掩模层的高等离子体电阻，从而有效地消除了沉积物对电极的粘附，并且可以控制等离子体密度。解决方案：用于支撑晶片的上电极34和下电极16在室10中彼此面对布置，上电极34与第一高频电源48连接，用于施加第一高频相对高频的功率，下电极16连接到用于施加相对低频的第二高频功率的第二高频电源90，上电极34与可变直流电源50连接，等离子体蚀刻通过将处理气体供应到室10中并产生等离子体来进行。版权所有（C）2007，JPO＆INPIT

34. 发明专利

JP2005277369A Focus ring and plasma processing apparatus 有权
标题翻译：聚焦环和等离子体加工设备
公开(公告)号：JP2005277369A
公开(公告)日：2005-10-06
申请号：JP2004242218
申请日：2004-08-23
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOSHIISHI AKIRA , TANAKA HIDEO , OKAYAMA NOBUYUKI , MIYAGAWA MASAAKI , MIZUKAMI SHUNSUKE , SHIMIZU WATARU , HIROSE JUN , WAKAGI TOSHIKATSU , MIWA TOMONORI , OYABU ATSUSHI , HAYASHI DAISUKE
IPC分类号： H05H1/46 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a focus ring and a plasma processing apparatus with which the uniformity of the processing within a semiconductor wafer surface is improved and occurrence of the deposition on the rear-surface side of the peripheral-edge part of the semiconductor wafer is reduced as compared to that by prior art. SOLUTION: A loading table 2 for loading a semiconductor wafer W and a focus ring 8 that surrounds the periphery of the semiconductor wafer W loaded on the loading table 2 are provided in a vacuum chamber 1. The focus ring 8 is constituted by a ring-shaped lower member 9, composed of a dielectric and a ring-shaped upper member 10 arranged on the upper part of the lower member 9 and is composed of an electrically conductive material. The upper surface of the outer peripheral side of the upper member 10 is made to be a flat part 10a, whose position is higher than the surface to be processed of the semiconductor wafer W. The inner peripheral part of the flat part 10a is made to be a sloping part 10b that slopes, in such a way that the outer peripheral part is higher than the lower peripheral part. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种聚焦环和等离子体处理装置，其中半导体晶片表面内的处理的均匀性得到改善，并且在外围边缘部分的后表面侧的沉积的发生与现有技术相比，半导体晶片减少。解决方案：在真空室1中设置有用于装载半导体晶片W的加载台2和围绕装载台2上的半导体晶片W的周围的聚焦环8.聚焦环8由由电介质构成的环状下部构件9和布置在下部构件9的上部并由导电材料构成的环状上部构件10。上部构件10的外周侧的上表面被制成为位置比半导体晶片W的待处理表面高的平坦部分10a。平坦部分10a的内周部分被制成是倾斜的倾斜部分10b，其外周部分比下部周边部分高。版权所有（C）2006，JPO＆NCIPI

35. 发明专利

JP2001308080A PLASMA PROCESSING APPARATUS 失效
公开(公告)号：JP2001308080A
公开(公告)日：2001-11-02
申请号：JP2001077749
申请日：2001-03-19
申请人： TOKYO ELECTRON LTD
发明人： IMAFUKU KOSUKE , ENDO NORISUKE , TAWARA KAZUHIRO , TSUCHIYA HIROSHI , TOMOYASU MASAYUKI , NAITO YUKIO , NAGASEKI KAZUYA , NONAKA TATSU , HIROSE KEIZO , FUKAZAWA YOSHIO , KOSHIISHI AKIRA , KOBAYASHI ISAO
IPC分类号： H05H1/46 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To realize a high-density plasma by confining a plasma in a space between electrodes without diffusing it in a processing chamber. SOLUTION: The plasma processing apparatus for processing a work on a susceptor in a process chamber with a plasma generated by a high-frequency power in the process chamber, comprises a first annular magnetic field forming means disposed concentrically to the susceptor around the vicinity of the susceptor, and a second magnetic field forming means composed of a permanent magnet 72 is disposed facing the first magnetic field forming means via a gap with a magnetic member 75 attached to a permanent magnet 72.

36. 发明专利

JP2000331996A PLASMA PROCESSING DEVICE 失效
公开(公告)号：JP2000331996A
公开(公告)日：2000-11-30
申请号：JP14120999
申请日：1999-05-21
申请人： TOKYO ELECTRON LTD
发明人： KOSHIISHI AKIRA
IPC分类号： H01L21/302 , B01J19/08 , C23C16/50 , C23C16/505 , H01L21/205 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing device that makes the unevenness of electric field distribution on a surface of an electrode small so that etching rate distribution is uniform in a plasma process using a high density plasma that can correspond to further fining. SOLUTION: In a plasma processing device 1, a first and second electrodes 21 and 5 that are provided so as to face each other in a chamber are placed, a conductive cylindrical member 61 grounded in close vicinity to the circumference of a load dispatching bar 33 supplying high frequency to the first electrode 21 is provided, and a conductive plate member 62 grounded in a close vicinity to a surface of the first electrode 21 opposite to a surface facing the second electrode 5 is provided. Under a state where a substrate W is supported by one of these electrodes, the plasma of processing gas is formed by forming a high frequency electric field between the first and second electrodes, and plasma processing is performed on the substrate W by this plasma.

37. 发明专利

JP2000323456A PLASMA PROCESSING DEVICE AND ELECTRODE USED THEREFOR 失效
公开(公告)号：JP2000323456A
公开(公告)日：2000-11-24
申请号：JP12687899
申请日：1999-05-07
申请人： TOKYO ELECTRON LTD
发明人： KOSHIISHI AKIRA
IPC分类号： H01L21/302 , C23C14/34 , C23C14/50 , C23F4/00 , H01L21/3065 , H01L21/31 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing device which is capable of more finely processing a work by the use of a plasma of high density and making an electric field distribution more uniform on the surface of an electrode and an electrode used for it. SOLUTION: A substrate is subjected to a prescribed plasma processing through a plasma processing device, where an upper electrode 21 is equipped with an electrode plate 23 provided confronting the lower electrode. The electrode plate 23 is equipped with an outer part 61 formed of conductor or semiconductor and a center part 62 formed of dielectric member or high-resistance member higher in resistance than the outer part 61, and a high-frequency power is applied to the upper electrode 21 through its surface opposite to its other surface that confronts the lower electrode.

38. 发明专利

JP2000173993A PLASMA TREATING APPARATUS AND ETCHING METHOD 失效
公开(公告)号：JP2000173993A
公开(公告)日：2000-06-23
申请号：JP34276498
申请日：1998-12-02
申请人： TOKYO ELECTRON LTD , HITACHI LTD
发明人： KOJIMA MASAYUKI , SHIOYA MASAHIRO , YAMADA TAKASHI , TAWARA YOSHIFUMI , TOMOYASU MASAYUKI , KOSHIISHI AKIRA , NISHIMURA EIICHI , NAGAHATA KAZUNORI
IPC分类号： H01L21/302 , C03C17/34 , H01L21/3065 , H01L21/311 , H01L21/60 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma treating apparatus applicable to the more fine forming and an etching method which is applicable to the more fine forming and enables to perform etching process with higher selectivity. SOLUTION: The etching method is as follows: An upper electrode 21 and a lower electrode (susceptor) 5 are opposed in a chamber 2, a process gas is introduced in the chamber 2 held at a low pressure with a substrate supported with the lower electrode 5, while a high frequency electric field is formed between the upper and lower electrodes 21, 5 to generate a plasma of the process gas, and the substrate is etched with this plasma wherein a high frequency voltage of e.g. 60 MHz in a range of 50-150 MHz is applied to the upper electrode 21 and a high frequency voltage of e.g. 2 MHz in a range of 1-4 MHz is applied to the lower electrode 5.

39. 发明专利

JP2000082698A PLASMA PROCESSING APPARATUS 失效
公开(公告)号：JP2000082698A
公开(公告)日：2000-03-21
申请号：JP17318999
申请日：1999-06-18
申请人： TOKYO ELECTRON LTD
发明人： KOSHIISHI AKIRA
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To improve processing speed and processing uniformity by implementing the smooth circulation of a processing gas through a simple modification of the apparatus when a process using plasma is performed. SOLUTION: An etching gas serving as a processing gas is supplied into a processing chamber 2 via diffusion holes 23 of an upper electrode 21 that extends in the upper region of the chamber 2. A gas diffusion guide 24 opening in a flared manner onto a susceptor 5 constituting a lower electrode is arranged around the electrode 21. The conductance of the etching gas purged from the holes 23 is reduced and a uniform concentration distribution is also achieved, thereby improving etching rate and processing uniformity.

40. 发明专利

JPH03222241A ION SOURCE DEVICE 失效
公开(公告)号：JPH03222241A
公开(公告)日：1991-10-01
申请号：JP1741790
申请日：1990-01-25
申请人： TOKYO ELECTRON LTD
发明人： KAWAMURA GOHEI , MATSUDO MASAHIKO , TAKAYAMA NAOKI , KOSHIISHI AKIRA
IPC分类号： H01J27/02 , H01J27/20 , H01J37/08
摘要： PURPOSE:To suppress temperature rise near an ion source so as to prevent generation of vacuum leakage or the like due to damage of an O-ring or the like by providing a means, which is provided for blocking the opening of a vacuum chamber so as to cool a supporting plate for supporting an ion source. CONSTITUTION:An opening 2 is formed on the end part of a vacuum chamber 1, a ring-shaped member 4 is fixed through an O-ring 3 so as to form a flange having a step on the side of the peripheral part of the opening 2 while providing the ring-shaped part 4 with a ring-shaped coolant flow passage 5 in its inside. The opening 2 is provided with a disk-shaped supporting plate 6 so as to airtightly block the opening 2, the supporting plate 6 is engagingly locked to the ring-shaped member 4 through the O-ring 7 to come in contact with the flange side face and fixed thereto to be freely mounted and dismounted. In this case, the coolant is forced to circulate through the coolant flow passage 5 provided on the ring-shaped member 4 housing the O-ring 7, so as to cool the supporting plate 6. Thereby, for instance, the O-ring 7 or the like interposed between the supporting plate 6 and the ring-shaped member 4 is prevented from being damaged due to heat resulting in generation of vacuum leakage or the like.

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