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    • 32. 发明专利
    • ELECTRON BEAM DEVICE
    • JP2000173519A
    • 2000-06-23
    • JP34254998
    • 1998-12-02
    • HITACHI LTD
    • MURAKOSHI HISAYAMAKINO HIROSHISHINADA HIROYUKIIWABUCHI HIROKOFUKUHARA SATORU
    • H01J37/04
    • PROBLEM TO BE SOLVED: To independently align the optical axis relative to an objective lens and a decelerating lens and to quickly and accurately perform complicated optical axis alignment by providing a means changing a voltage applied to the decelerating means for decelerating the electron beam between a sample and a convergence means, in a decelerating lens power supply. SOLUTION: An optical axis alignment of an electron beam for an electron beam device is so constituted that at first, the optical axis of a primary electron beam 101 is coincided with the center of an objective lens 5 and secondly, the optical axis relative to a sample and a decelerating lens 8 constituted of an opposite electrode arranged opposed to the sample 6 is aligned. When the voltage fed from the decelerating lens power supply 16 is fluctuated so as to diagonally irradiate the electron beam to the decelerating lens 8, the image is largely moved by the voltage fluctuation, however, the electron beam is perpendicularly irradiated by the alignment of the decelerating lens aligner. When the decelerating lens aligner is positioned on the objective lens 5 or between the objective lens 5 and decelerating lens 8, the optical axis alignment relative to the decelerating lens 8 can be independently implemented without changing the current center of the objective lens 5.
    • 34. 发明专利
    • SCANNING MICROSCOPE
    • JPH0636726A
    • 1994-02-10
    • JP18655092
    • 1992-07-14
    • HITACHI LTD
    • FUKUHARA SATORUTODOKORO HIDEO
    • G02B7/28G01Q30/02G01Q60/10G02B21/00H01J37/21H01J37/28
    • PURPOSE:To focus a scan image at any point even when the height of each point of the scanning region of a sample is changed by providing a means storing the sample irregularity information of the scanning region and a means controlling the focal distance of an objective lens based on the irregularity information. CONSTITUTION:Irregularities of a sample 4 are measured by a scanning tunnel microscope 18 before the sample 4 is scanned by an electron beam 1, and the distance of the surface of the sample 4 from an objective lens 13 can be primarily determined by this measurement. The focal point of the lens 13 is determined, and the optimum beam diameter can be obtained on the surface of the sample 4. The irregularity information of the scanning region 5 of the sample 4 obtained by the microscope 18 is converted into the distance from the lens 13 and stored in an irregularity information memory 15 in the order of scanning. When the beam 1 is scanned and the scan image is focused by the lens 13 via an objective lens control circuit 14, the irregularity information of the memory 15 is read out for focusing. The scan image scanned with the optimum electron beam diameter can be obtained in each region 5.
    • 35. 发明专利
    • SCANNING ELECTRON MICROSCOPE
    • JPH0547335A
    • 1993-02-26
    • JP32187991
    • 1991-12-05
    • HITACHI LTD
    • TODOKORO HIDEOFUKUHARA SATORUICHIHASHI MIKIO
    • G01R31/302H01J37/141H01J37/143H01J37/244H01J37/28H01L21/66
    • PURPOSE:To detect the correct signal without deflecting the secondary electrons from a sample by providing a deflector and a detector between the first focusing lens and the second focusing lens adjacent to the sample so that the detector is located below the deflector. CONSTITUTION:The focusing lens 3 constituted of an exciting coil 1 and a magnetic path 2 is arranged immediately above a sample 15, semi-spherical grids 13, 14 are provided above the lens 3, and DC power sources 11, 12 are connected. A detector constituted of a scintillator 6 and a photo-multiplier 8 is arranged between the first focusing lens 5 and the second focusing lens 3 and below the deflector 24 above both sides of the grids 13, 14. For an operation function test, a beam 16 is focused on the sample 15 with only the lens 5. For a high-resolution mode test, the lenses 5, 3 are operated for short-focal point operation, and the secondary electrons passing through the magnetic field of the lens 3 are detected. The correct signal is detected while the secondary electrons from the sample 15 are not deflected, the work distance is reduced, and a high-magnifying power image can be provided.
    • 37. 发明专利
    • SCANNING TUNNEL MICROSCOPE
    • JPH04127001A
    • 1992-04-28
    • JP24697990
    • 1990-09-19
    • HITACHI LTD
    • FUKUHARA SATORUYAMADA OSAMUNAKAIZUMI YASUSHIFUTAMOTO MASAAKI
    • G01B7/34G01N37/00G01Q60/10G01Q60/16H01J37/28
    • PURPOSE:To prevent a break of a probe and to improve the operating convenience of the probe by employing lanthanum hexaboride as the probe. CONSTITUTION:A gap between a sample 6 and a probe 5 is controlled in the following manner. A Z-axis piezo 2 for rough adjustment is driven by a Z-axis piezo control circuit 11 to make the probe 5 close to the tunnel area of the sample 6. At this time, a tunnel current of several nA is allowed to flow between the sample 6 and probe 5 by impressing an optional voltage between the sample and probe. Since this tunnel current is a function of the gap between the sample 6 and probe 5, if the piezo 2 is controlled according to the feedback method so as to make the tunnel current constant, the roughness information of the sample 5 is obtained from the displacement of the piezo 2. The maximum extension of the Z-axis of piezo is prescribed for the using piezo. Therefore, when the height exceeding the operable limit is measured, the servo control is not effected, resulting in a collision of the probe against the sample. The probe may be eventually broken. Therefore, a single crystal of considerably hard lanthanum hexaboride is employed as the probe 5, thereby preventing the probe from being broken.