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31. 发明专利

JPS62200783A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62200783A
公开(公告)日：1987-09-04
申请号：JP4177386
申请日：1986-02-28
申请人： HITACHI LTD
发明人： OISHI AKIO , TSUJI SHINJI , HIRAO MOTONAO , MATSUMURA HIROYOSHI
IPC分类号： H01L29/73 , H01L21/331 , H01L29/205 , H01L29/737 , H01S5/00
摘要： PURPOSE:To obtain a highly reliable semiconductor device such as a lateral single-mode semiconductor laser having a low threshold current value which is not changed in association with lapse of operating time, by utilizing InGaAsP layers for all or a part of semiconductor layers forming NPN- or PNP-type junctions. CONSTITUTION:All or a part of semiconductor layers forming PNP- or NPN- type junctions are formed of InGaAsP. For example, an InGaAsP active layer 7 and a P-type InP layer 8 are formed on an N-type InP substrate 1 by means of the liquid-phase growth process. After that, a mesa stripe is formed with the active layer 7 of a width of about 1mum left. A P-type InGaAsP layer 2, a P-type InP layer 3 and an N-type InP layer 4 are formed on opposite sides of the mesa by means of the liquid-phase growth process. Subsequently, a P-type InP layer 5 and a P-type InGaAsP layer 6 are grown on the whole surface to produce a semiconductor laser. In this contruction, the layers 4, 3 and 2 and the substrate 1 constitute an NPN structure in which an intermediate P-type layer is provided by the InGaAsP layer 2. These layers act as current blocking layers for preventing electric current from flowing out of the active layer.

32. 发明专利

JPS6261381A SEMICONDUCTOR LASER 失效
公开(公告)号：JPS6261381A
公开(公告)日：1987-03-18
申请号：JP19941685
申请日：1985-09-11
申请人： HITACHI LTD
发明人： OISHI AKIO , HIRAO MOTONAO , TSUJI SHINJI , NAKAMURA HITOSHI , MATSUMURA HIROYOSHI
IPC分类号： H01S5/00
摘要： PURPOSE:To obtain a buried semiconductor laser which increases a current blocking layer and operates at high temperature with high output by forming a P-type or N-type layer which acts as the blocking layer before forming a mesa. CONSTITUTION:Zn or Cd is diffused in an N-type InP substrate 1 except a portion to become a current path to form a P-type layer 2, and an InGaAsP active layer 6, a P-type InP clad layer 7 and a P-type InGaAsP cap layer 8 are grown. A reverse mesa is etched in a portion to become a current path, and a P-type InP or InGaAsP layer 3, an N-type InP layer 4, an N-type InGaAsP layer 5 are continuously grown by burying growth on both sides. Thus, the layer 2 which acts as a current blocking layer can be readily increased in thickness to improve the end pressure, thereby operating at high temperature with high output.

33. 发明专利

JPS61253881A DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER 失效
公开(公告)号：JPS61253881A
公开(公告)日：1986-11-11
申请号：JP9543385
申请日：1985-05-07
申请人： HITACHI LTD
发明人： KANAI MIYO , KAYANE NAOKI , OISHI AKIO , TSUJI SHINJI
IPC分类号： H01S5/00 , H01S5/026 , H01S5/10 , H01S5/12
摘要： PURPOSE:To enable to regulate the projecting angle of laser projection light, by making the shape of at least one of light projecting end faces a paraboloid or circle including an ellipse. CONSTITUTION:After a mesa is formed, a P-type InP buried layer 7, N-type InP buried layer 8 and P-type InGaAsP cap layer 9 are sequentially grown by liquid phase growing. After a Cr-Au electrode 10 and AuGeNi-Cr-Au electrode 11 are deposited, the section of the end face projection laser light is made curved 12. In this way, by making the shape of the light projecting end face a paraboloid or circle including an ellipse, a lens effect for the laser projecting light at this section can be utilized to reduce the projecting angle. Moreover, by varying the form such as the curvature of the curved section of the light projecting face, the projecting angle can be regulated.

34. 发明专利

JPS61189502A METHOD AND DEVICE FOR FORMING DIFFRACTION GRATING 失效
公开(公告)号：JPS61189502A
公开(公告)日：1986-08-23
申请号：JP2931085
申请日：1985-02-19
申请人： HITACHI LTD
发明人： TSUJI SHINJI , OKAI MAKOTO , MATSUMURA HIROYOSHI , NAKAMURA HITOSHI , SAKANO SHINJI , HIRAO MOTONAO , KAYANE NAOKI , OISHI AKIO
IPC分类号： G02B5/18
摘要： PURPOSE:To form diffraction gratings which have the same period and are out of phase with each other on the same substrate with good reproducibility by providing an optical path length varying means which varies the phase of light in an adjustable state at least one luminous flux side in luminous flux after splitting. CONSTITUTION:A mechanism for phase adjustment is provided at one of positions 21-23 or to a mirror 142 to obtain the diffraction gratings which has the same grating intervals and are out of phase on the same substrate. This mechanism for phase adjustment employs the rotation of an optical parallel plate 2a which differs in reflective index from an ambient atmosphere, the reflection of a multiple reflecting mirror 2b which moves in parallel, the parallel movement of a prism 2c, or the electrooptic effect of a dielectric 2d. Consequently, the diffraction gratings which has the same period and are out of phase with each other are formed on the same substrate with good reproducibility and a single longitudinal mode laser is obtained with good reproducibility.

35. 发明专利

JPS6184890A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：JPS6184890A
公开(公告)日：1986-04-30
申请号：JP20623784
申请日：1984-10-03
申请人： Hitachi Ltd
发明人： SAITO KATSUTOSHI , TSUJI SHINJI , OISHI AKIO , KAYANE NAOKI
IPC分类号： H01L21/3205 , H01L23/52 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/12 , H01S5/227
CPC分类号： H01S5/227 , H01L24/05 , H01L2224/04042 , H01L2224/48463 , H01S5/026 , H01S5/12 , H01S5/2275
摘要： PURPOSE:To reduce the electrostatic capacitance produced by an electrode provided on the main surface side, by a method wherein the electrode structure constructed of an ohmic electrode having a specific width, one or more lead terminals to supply power to this electrode, and one or more bonding pads to connect lead wires for external connection is used to excite the active region. CONSTITUTION:A diffraction grating is formed in the surface of an n type InP substrate 40, and an InGaAsP guide layer 41, an InGaAsP active layer 42, an InGaAsP antimeltback layer 43, a p type InP clad layer 44, and a p- InGaAsP surface layer 45 are laminated thereon. The guide, active, antimeltback, clad, and surface layers are constructed in stripe form by selective etching, and the width of the active layer is adjusted at about 6mum. The stripe mesa part including the active layer 42 is filled with the liquid epitaxial grown layers of a p-InP layer 46, an n-InP layer 47, and an InGaAsP surface layer 48, resulting in the construction of a DFB type laser of BH structure. The substrate is provided with an ohmic electrode 49 made of Au-Ge-Ni-Au.
摘要翻译：目的：为了减小由主表面侧的电极产生的静电电容，通过这样一种方法，其中由具有特定宽度的欧姆电极构成的电极结构，一个或多个用于向该电极供电的引线端子，以及一个或用于连接用于外部连接的引线的更多接合焊盘用于激发有源区。构成：在n型InP衬底40的表面和InGaAsP导向层41，InGaAsP有源层42，InGaAsP抗反射层43，p型InP覆盖层44和pInGaAsP表面中形成衍射光栅层45。通过选择性蚀刻，引导，主动，防反射，包层和表面层以条纹形式构成，活性层的宽度调节为约6μm。包括有源层42的条状台面部分填充有p-InP层46，n-InP层47和InGaAsP表面层48的液体外延生长层，从而构造了BHB型激光器结构体。衬底设有由Au-Ge-Ni-Au制成的欧姆电极49。

36. 发明专利

JPH0851256A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH0851256A
公开(公告)日：1996-02-20
申请号：JP18528495
申请日：1995-07-21
申请人： HITACHI LTD
发明人： SAITO KATSUTOSHI , TSUJI SHINJI , OISHI AKIO , KAYANE NAOKI
IPC分类号： H01L21/3205 , H01L23/52 , H01S5/00 , H01S5/042 , H01S3/18
摘要： PURPOSE:To provide a semiconductor laser that reduces electrostatic capacitance of an element without losing an electrode region for wire bonding, and is suitable for a superhigh speed pitch. CONSTITUTION:An upper electrode 12 in which a width of an electrode layer for exciting an active region 11 is suppressed down to 15 times or less as wide as an active region is provided on the main surface side of a semiconductor crystal 14. A lead electrode 16 for an upper electrode 12 and a bonding pad 17 being a region dedicated to wire bonding are provided to perform bonding a lead wire 15. Further, the lead electrode 16 and the bonding pad 17 are provided on an insulation layer 20 partially provided on the main surface side of a semiconductor crystal 11. Accordingly, electrostatic capacitance by an electrode on the main surface side can be reduced to one hundredth than before.

37. 发明专利

JPH07235724A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH07235724A
公开(公告)日：1995-09-05
申请号：JP2506994
申请日：1994-02-23
申请人： HITACHI LTD
发明人： UOMI KAZUHISA , OISHI AKIO , OKA SATOHIKO , KOMORI MASAAKI , TSUCHIYA TOMONOBU
IPC分类号： H01S5/00 , H01S3/18
摘要： PURPOSE:To provide a long-wavelength band semiconductor layer that oscillates by low-threshold current (especially of 1mA or below with high slope efficiency. CONSTITUTION:A long wavelength band semiconductor laser (wavelength of 1.25mum-1.6mum) is provided by setting the resonator length L and the reflectance Rf of a rear edge plane at suitable values (80mum

38. 发明专利

JPH07147454A SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPH07147454A
公开(公告)日：1995-06-06
申请号：JP29630793
申请日：1993-11-26
申请人： HITACHI LTD
发明人： OKA SATOHIKO , OISHI AKIO , ONO YUICHI
IPC分类号： H01S5/00 , H01S3/18
摘要： PURPOSE:To improve characteristic such as realization of a low threshold value of a semiconductor element by making the strain amount of a strain quantum well uniform. CONSTITUTION:The lattice constant difference of strain quantum wells 4, 5, 6, 7, 8 constituting a strain multiquantum well active layer 10 to a strain-free n-InP substrate 1 is made larger in the strain quantum wells 5, 6, 7 positioned inside compared to the strain quantum wells 4, 8 which are closest to a p-InP clad layer 12. Since relaxation of the strain of the strain quantum wells 4, 5, 6, 7, 8 positioned inside a multiple strain quantum well can be thereby ensured, the strain amount can be maximized in a range of a critical film thickness.

39. 发明专利

JPH03205887A BURIED TYPE SEMICONDUCTOR LASER 失效
公开(公告)号：JPH03205887A
公开(公告)日：1991-09-09
申请号：JP67890
申请日：1990-01-08
申请人： HITACHI LTD
发明人： OISHI AKIO
IPC分类号： H01S5/00 , H01S5/22 , H01S5/223 , H01S5/323
摘要： PURPOSE:To make it possible to embody a buried structure with ease even in the case of a semiconductor laser provided with cladding made of a material which is hard to make a buried growth by lattice-maching an active layer with a material system, which is different from a cladding layer, on a buried layer and using a 111-V group semiconductor whose band width is greater than that of the active layer. CONSTITUTION:An attempt is made to grow an n-(Al0.6Ga0.4)0.51In0.49P cladding layer 2, an In0.49Ga0.51P active layer 3, p-(Al0.6Ga0.4)0.51In0.49P cladding layer 4, and a p-GaAs cap layer 5 on an n-Ga substrate 1 and form reverse mesa stripes, and bury both sides of the mesa stripes with a p-Al0.5Ga0.2As layer 6, and an n-Al0.8Ga0.2As layer 7, which are different from an AlGaInP system of the cladding layer. In this case, the x of the AlxGa1-xAs used for embedding growth is adapted to be larger than the band width of the AlGaInP active layer and fail to exceed a differential lattice constant of 0.2% of the active layer as well.

40. 发明专利

JPH03172867A OPTICAL INFORMATION PROCESSOR 失效
公开(公告)号：JPH03172867A
公开(公告)日：1991-07-26
申请号：JP31066889
申请日：1989-12-01
申请人： HITACHI LTD , HITACHI KOKI KK
发明人： ARIMOTO AKIRA , KAJIMURA TAKASHI , OISHI AKIO , SUKETA YASUSHI , SAITO SUSUMU , NISHINO SHINICHI , MOCHIZUKI KENJI
IPC分类号： B41J2/44 , G02B26/10 , G03G15/04 , H01S5/068 , H04N1/036
摘要： PURPOSE:To surely process information in an optical information processor in which the pulse width of a laser light beam gets >=1mus by applying a bias current which is specified times as large as a laser oscillation threshold to a semiconductor laser. CONSTITUTION:Based on relationship between a light output and the current applied to the semiconductor laser 1, a driving current Id is previously set in a semiconductor laser control circuit 11 so that the bias current Ib may gets 0.75 times to once as large as the laser oscillation threshold Ith. The circuit 11 turns on the laser 1 at the time of non-printing and controls a current value added to the laser 1 so that the light output of the laser 1 may be made constant. Besides, a current value at the time of non-printing, that is, a current at on-time is applied to the laser 1 at the on-time in printing. At the off-time in the printing, the current value obtained by subtracting the current Id from the current at the on-time, that is, the current Ib is applied to the laser 1. In this laser printer, the lowering rate of the light output from the laser 1 is made

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