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31. 发明专利

JP2008258375A Plasma damage detection measuring device and plasma processing device 审中-公开
标题翻译：等离子体损伤检测装置和等离子体处理装置
公开(公告)号：JP2008258375A
公开(公告)日：2008-10-23
申请号：JP2007098464
申请日：2007-04-04
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： KOHAMA SHINJI , NISHIO RYOJI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma damage detecting device or the like capable of obtaining an accurately evaluation.
SOLUTION: A substrate wafer is prepared, an insulating film simulated as a gate oxide film is formed on its surface, and a measuring electrode 102 for measuring an electrical potential applied on the insulating film is provided to make the wafer 101 for the measurement. This is mounted in a processing chamber of a plasma processing device, the charge of the measuring electrode 102 is taken out to an output equipment 305 through a high-impedance split probe 104 and an atmosphere side high-voltage probe 304, a charge-up state of the wafer 101 is observed by a monitor of the atmosphere side output equipment 305, and the data can be measured.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够获得准确评估的等离子体损伤检测装置等。解决方案：制备基板晶片，在其表面上形成模拟为栅极氧化膜的绝缘膜，并且设置用于测量施加在绝缘膜上的电位的测量电极102，以使晶片101 测量。将其安装在等离子体处理装置的处理室中，测量电极102的电荷通过高阻抗分离探头104和气氛侧高压探针304，充电器被取出到输出设备305 通过大气侧输出设备305的监视器观察晶片101的状态，并且可以测量数据。版权所有（C）2009，JPO＆INPIT

32. 发明专利

JP2007158373A Apparatus for plasma processing 有权
标题翻译：等离子体处理设备
公开(公告)号：JP2007158373A
公开(公告)日：2007-06-21
申请号：JP2007032534
申请日：2007-02-13
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： NISHIO RYOJI , YOSHIOKA TAKESHI , KANAI SABURO , KANEKIYO TADAMITSU , KIHARA HIDEKI , OKUDA KOJI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for plasma processing which has excellent mass production stability by controlling a film deposited on the inner wall of a vacuum processing vessel. SOLUTION: The apparatus includes: a gas ring which constitutes a part of a vacuum processing chamber 2 and has a supply opening for a processing gas; a bell jar 12 which covers the upper portion of the gas ring to form the vacuum processing chamber; antennas 1a and 1b which are arranged at the upper portion of the bell jar 12 and supplies high frequency electric field in the vacuum processing chamber to produce a plasma; a mounting table 5 on which a sample 13 is mounted in the vacuum processing chamber; a Faraday shield 8 which is arranged between each of the antennas 1a and 1b and the bell jar 12, and to which a high frequency bias voltage is applied; and a deposition-preventing plate detachably attached to the inner surface of the gas ring except for the supply opening of the processing gas; wherein the area of the inner surface of the gas ring including the deposition-preventing plate, which can be seen from the sample plane, is set substantially equal to or greater than 1/2 of the area of the sample. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供通过控制沉积在真空处理容器的内壁上的膜而具有优异的批量生产稳定性的等离子体处理装置和方法。解决方案：该装置包括：构成真空处理室2的一部分并具有用于处理气体的供给开口的气环; 一个罩子12，其覆盖气环的上部以形成真空处理室; 天线1a和1b布置在钟罩12的上部，并在真空处理室中提供高频电场以产生等离子体; 安装台5，样品13安装在真空处理室中; 布置在每个天线1a和1b与钟罩12之间的法拉第屏蔽8，并且施加高频偏置电压; 以及除了所述处理气体的供给开口之外，可拆卸地安装在所述气体环的内表面上的防沉积板; 其中，从样品平面可以看到包括防沉积板的气体环的内表面的面积被设定为基本上等于或大于样品面积的1/2。版权所有（C）2007，JPO＆INPIT

33. 发明专利

JP2006319360A Method for processing plasma 有权
标题翻译：处理等离子体的方法
公开(公告)号：JP2006319360A
公开(公告)日：2006-11-24
申请号：JP2006195830
申请日：2006-07-18
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： NISHIO RYOJI , YOSHIOKA TAKESHI , KANAI SABURO , KANEKIYO TADAMITSU , KIHARA HIDEKI , OKUDA KOJI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a device and a method for processing plasma superior in stablity in mass production by controlling a deposition film depositing on the inside wall of a vacuum chamber. SOLUTION: The device comprises: a gas ring composing a part of a vacuum processing chamber 2 and having the nozzle of a processing gas; a belljar 12 for covering an upper part of the gas ring and forming the vacuum processing chamber; and antennas 1a, 1b disposed in the upper part of the belljar 12 for supplying high frequency electric field to the vacuum processing chamber to generate plasma. The device also comprises: a mounting base 5 for mounting a sample 13 in the vacuum processing chamber; a Faraday shield 8 arranged between the antennas 1a, 1b and the belljar 12 and supplied by high frequency bias voltage; and a deposition proof plate detachably fixed to the inner side of the gas ring except the nozzle of the processing gas. The area of the inner side of the gas ring including the deposition proof plate visible from the side of the sample is set to approximately not less than 1/2 of the area of the sample. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过控制沉积在真空室的内壁上的沉积膜来提供用于处理大批量生产稳定性的等离子体的装置和方法。解决方案：该装置包括：构成真空处理室2的一部分并具有处理气体的喷嘴的气环; 用于覆盖气体环的上部并形成真空处理室的钟形部12; 以及设置在喇叭喇12的上部的天线1a，1b，用于向真空处理室提供高频电场以产生等离子体。该装置还包括：用于将样品13安装在真空处理室中的安装基座5; 布置在天线1a，1b和钟形12之间并由高频偏置电压提供的法拉第屏蔽8; 以及可拆卸地固定到除了处理气体的喷嘴之外的气体环的内侧的防沉积板。包含从样品一侧可见的防沉积板的气体环的内侧面积被设定为大约不小于样品面积的1/2。版权所有（C）2007，JPO＆INPIT

34. 发明专利

JP2005303099A Apparatus and method for plasma processing 审中-公开
标题翻译：用于等离子体处理的装置和方法
公开(公告)号：JP2005303099A
公开(公告)日：2005-10-27
申请号：JP2004118513
申请日：2004-04-14
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： NISHIO RYOJI , KANEKIYO TAKAMITSU , OTA YOSHIYUKI , MATSUMOTO TAKESHI
IPC分类号： H01L21/3065 , C23F1/00 , H01J37/32
CPC分类号： G06F17/5081 , G06F17/5086 , H01J37/32082 , H01J37/32642 , H01J37/32935 , H01L21/67069 , H01L21/6875
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of uniformizing a process result within a wafer face by minimizing ununiformity of a potential distribution around the outer circumference of the wafer. SOLUTION: The plasma processing apparatus is equipped with a focus ring optimized for the purpose of the process and configured with a dielectric body, a conductor or a semiconductor to which a high frequency is applied by clarifying physical conditions that a sheath-plasma boundary 74 on a wafer 72 and a sheath-plasma boundary on the focus ring 80 are flat so as to establish the design method of its concrete structure. The surface voltage of the focus ring is selected to be a minimum voltage or over so as to avoid a reaction product by the wafer process from being deposited. The height of the focus ring surface, the surface voltage of the focus ring, and the type of material and the structure of the focus ring, are optimized so that the height of an ion sheath 36 formed on the surface of the focus ring is the same as the height of an ion sheath formed on the surface of the wafer, or has a step difference within the range of a proper allowable value. Further, the structure is optimized on the basis of the setting of the proper allowable value by taking into consideration a secular change due to wear of the focus ring. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种等离子体处理装置，其能够通过使晶片的外周周围的电位分布的不均匀性最小化来使晶片面内的处理结果均匀化。解决方案：等离子体处理装置配备有针对该工艺的目的而优化的聚焦环，并配置有通过澄清物理条件施加高频率的电介质体，导体或半导体，其中鞘 - 等离子体晶圆72上的边界74和聚焦环80上的鞘等离子体边界是平坦的，以便建立其混凝土结构的设计方法。聚焦环的表面电压被选择为最小电压或超过，以避免晶片工艺的反应产物被沉积。聚焦环表面的高度，聚焦环的表面电压以及材料的类型和聚焦环的结构被优化，使得形成在聚焦环表面上的离子鞘36的高度为与形成在晶片表面上的离子鞘的高度相同，或者在适当的允许值的范围内具有台阶差。此外，通过考虑到由于聚焦环的磨损引起的长期变化，基于适当允许值的设定来优化结构。版权所有（C）2006，JPO＆NCIPI

35. 发明专利

JP2005056914A Plasma etching apparatus and method 有权
标题翻译：等离子体蚀刻装置和方法
公开(公告)号：JP2005056914A
公开(公告)日：2005-03-03
申请号：JP2003206042
申请日：2003-08-05
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： MIYA TAKESHI , EDAMURA MANABU , YOSHIOKA TAKESHI , NISHIO RYOJI
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/00
CPC分类号： H01J37/32449 , H01J37/3244 , H01L21/67017 , H01L21/67069
摘要： PROBLEM TO BE SOLVED: To provide a plasma etching apparatus capable of processing a large diameter workpiece with high in-plane uniformity.
SOLUTION: The plasma etching system comprises a processing chamber 13 for performing plasma processing of a workpiece 1, a first processing gas supply 40, a second processing gas supply 50, a first gas inlet 65-1 for introducing processing gas into the processing chamber, a second gas inlet 65-2 for introducing processing gas into the processing chamber, flow regulators 42 and 53 for regulating the flow rate of processing gas, and a gas branch unit 60 for dividing a first processing gas into a plurality of branch flows. At least two gas pipes branched by the gas branch unit 60 are provided, respectively, with the first gas inlet 65-1 or the second gas inlet 65-2 and sections 63-1 and 63-2 for joining second processing gases are provided between the gas branch unit 60 and the first gas inlet 65-1 and between the gas branch unit 60 and the second gas inlet 65-2.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够处理具有高面内均匀性的大直径工件的等离子体蚀刻装置。解决方案：等离子体蚀刻系统包括用于执行工件1的等离子体处理的处理室13，第一处理气体供应源40，第二处理气体供应源50，用于将处理气体引入到第一处理气体供应源处理室，用于将处理气体引入处理室的第二气体入口65-2，用于调节处理气体的流量的流量调节器42和53以及用于将第一处理气体分成多个分支的气体分支单元60 流动。分别设置有由气体分支单元60分支的至少两个气体管道，第一气体入口65-1或第二气体入口65-2以及用于接合第二处理气体的部分63-1和63-2设置在气体分支单元60和第一气体入口65-1以及气体分支单元60和第二气体入口65-2之间。版权所有（C）2005，JPO＆NCIPI

36. 发明专利

JP2015022855A プラズマ処理装置有权
标题翻译：等离子体加工设备
公开(公告)号：JP2015022855A
公开(公告)日：2015-02-02
申请号：JP2013149027
申请日：2013-07-18
申请人：株式会社日立ハイテクノロジーズ , Hitachi High-Technologies Corp
发明人： SAKKA YUSAKU , KAWAGUCHI TADAYOSHI , NISHIO RYOJI
IPC分类号： H05H1/46 , C23C16/505 , H01L21/205 , H01L21/3065
摘要：【課題】本発明は、プラズマ入熱による誘電体窓の破損を抑制できるプラズマ処理装置を提供する。【解決手段】本発明は、試料をプラズマ処理し金属製のプラズマ処理室と、前記プラズマ処理室の上部を気密に封止し誘電体の誘電体窓と、前記誘電体窓の上方に配置され誘導磁場を発生させる誘導アンテナと、前記誘導アンテナに高周波電力を供給する高周波電源とを備えるプラズマ処理装置において、前記プラズマ処理室内にプラズマが生成された場合、前記誘導体窓に発生する誘導体窓の面内の温度差を低減する温度差低減機構をさらに備えることを特徴とする。【選択図】図3
摘要翻译：要解决的问题：提供一种能够抑制由等离子体热输入引起的电介质窗的破坏的等离子体处理装置。解决方案：等离子体处理装置包括：等离子体处理室，用于对样品进行等离子体处理并由金属形成; 电介质窗气密地密封等离子体处理室的上部并由电介质体形成; 感应天线，布置在电介质窗口的上方并产生感应磁场; 以及向感应天线提供高频电力的高频电源。等离子体处理装置还包括用于在等离子体处理室中产生等离子体时减小在电介质窗口处产生的电介质窗的面内温度差的温度差减小机构。

37. 发明专利

JP2014075362A Plasma processing device 有权
标题翻译：等离子体加工装置
公开(公告)号：JP2014075362A
公开(公告)日：2014-04-24
申请号：JP2013268191
申请日：2013-12-26
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： YOSHIOKA TAKESHI , KIKKAI MOTOHIKO , NISHIO RYOJI , KAWAGUCHI TADAYOSHI
IPC分类号： H05H1/46 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing device in which uniformity in the circumferential direction of plasma generated is enhanced by compensating for the coil current that changes as the coil is turned.SOLUTION: Ring-shaped conductors 8a, 8b are arranged in the vicinity of and along an induction antenna 1 consisting of an inner peripheral coil 1a and an outer peripheral coil 1b. The ring-shaped conductors 8a, 8b have such features that the radius from the center of the device and the cross-sectional shape of the conductor are different depending on the turning angle of the coil. Since the mutual inductance at the circumferential positions between the ring-shaped conductors 8a, 8b and the induction antenna 1, and between the ring-shaped conductors 8a, 8b and the plasma are controlled, the coil current changing as the coil of the induction antenna 1 is turned can be compensated, and thereby uniformity in the circumferential direction of a current on the plasma generated can be enhanced.
摘要翻译：要解决的问题：提供一种等离子体处理装置，其中通过补偿线圈转动而变化的线圈电流来增强等离子体产生的圆周方向上的均匀性。解决方案：环形导体8a，8b布置在由内周线圈1a和外周线圈1b构成的感应天线1附近。环形导体8a，8b具有这样的特征，即来自装置的中心的半径和导体的横截面形状根据线圈的转动角度而不同。由于环状导体8a，8b与感应天线1之间以及环状导体8a，8b与等离子体之间的圆周位置处的互感受到控制，所以线圈电流随着感应天线的线圈而变化 1可以被补偿，从而可以提高所产生的等离子体上的电流的圆周方向上的均匀性。

38. 发明专利

JP2014072508A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2014072508A
公开(公告)日：2014-04-21
申请号：JP2012220230
申请日：2012-10-02
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： SAKKA YUSAKU , NISHIO RYOJI
IPC分类号： H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus in which generation of foreign matters or adhesion of reaction products can be suppressed while optimizing gas supply state.SOLUTION: Faraday shields 18a, 18b and a gas release plate 11 are provided at positions facing each other while holding a dielectric vacuum window 2 therebetween. The gas release plate 11 has an opening (gas release port) for releasing gas into a processing chamber, and the Faraday shields are divided into the Faraday shield 18a disposed in a region facing the opening, and the Faraday shields 18b disposed at other regions. The voltages being applied to respective Faraday shields 18a, 18b can be controlled independently by a matching unit 16.
摘要翻译：要解决的问题：提供一种在优化气体供给状态的同时可以抑制异物的生成或反应产物的附着的等离子体处理装置。解决方案：法拉第屏蔽18a，18b和气体释放板11设置在面向每个另外在其间保持介电真空窗2。气体释放板11具有用于将气体释放到处理室中的开口（气体释放口），并且法拉第屏蔽被分成布置在面向开口的区域中的法拉第屏蔽18a和布置在其它区域的法拉第屏蔽18b。施加到相应的法拉第屏蔽18a，18b的电压可以由匹配单元16独立地控制。

39. 发明专利

JP2011192649A Plasma processor, and control method of plasma processor 有权
标题翻译：等离子体处理器和等离子体处理器的控制方法
公开(公告)号：JP2011192649A
公开(公告)日：2011-09-29
申请号：JP2011069911
申请日：2011-03-28
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： NISHIO RYOJI
IPC分类号： H05H1/46 , H01L21/3065 , H01L21/31 , H05H1/00
摘要： PROBLEM TO BE SOLVED: To provide a plasma processor equipped with a function to use the optimum signal for phase control. SOLUTION: This plasma processor includes: a coil shaped antenna 61 in which a first high-frequency voltage is supplied from a first high-frequency power source 4; an electrode 14 on which a wafer 12 is placed and to which a second high-frequency voltage is supplied from a second high-frequency power source 21; a Faraday shield 62 in which a third high-frequency voltage is supplied from a third high-frequency power source 25; and a phase controller 29 to control phase difference between the second high-frequency voltage and the third high-frequency voltage. This includes: a voltage detecting means to detect high-frequency potential propagating in plasma at an inner wall face of a vacuum container 1; and a plasma light-emitting detecting means 52 to detect a light-emitting state of the plasma in the vacuum container 1. By using a signal source that is obtained by combination of the high-frequency voltage detected by the voltage detecting means and plasma light detected by the plasma light-emission detecting means 52, phase difference of the second high-frequency voltage and the third high-frequency voltage having the same frequency is controlled. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种配备有使用最佳信号进行相位控制的功能的等离子体处理器。解决方案：该等离子体处理器包括：线圈状天线61，其中从第一高频电源4提供第一高频电压; 其上放置有晶片12并从第二高频电源21提供第二高频电压的电极14; 其中从第三高频电源25提供第三高频电压的法拉第屏蔽62; 以及控制第二高频电压和第三高频电压之间的相位差的相位控制器29。这包括：电压检测装置，用于检测在真空容器1的内壁面处等离子体中传播的高频电位; 以及等离子体发光检测装置52，用于检测真空容器1中的等离子体的发光状态。通过使用由电压检测装置检测的高频电压和等离子体光的组合而获得的信号源由等离子体发光检测装置52检测到，控制具有相同频率的第二高频电压和第三高频电压的相位差。版权所有（C）2011，JPO＆INPIT

40. 发明专利

JP2011103346A Plasma processing apparatus 有权
标题翻译：等离子体加工设备
公开(公告)号：JP2011103346A
公开(公告)日：2011-05-26
申请号：JP2009257312
申请日：2009-11-10
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： YOSHIOKA TAKESHI , KIKKAI MOTOHIKO , NISHIO RYOJI , KAWAGUCHI TADAYOSHI
IPC分类号： H01L21/3065 , C23C16/507 , H05H1/46
CPC分类号： H01J37/32623 , H01J37/321 , H01J37/3211
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus that compensates a coil current varying as the coil current revolves on a coil to improve uniformity of generated plasma in a peripheral direction. SOLUTION: Ring-shaped conductors 8a, 8b are arranged in the vicinity of and along an induction antenna 1 comprising an inner peripheral coil 1a and an outer peripheral coil 1b. The ring-shaped conductors 8a, 8b are characterized in that the radius from the center of the apparatus and conductor's cross-sectional shape are different depending on the angle of revolution on the coils. Mutual inductance is suppressed at positions in the peripheral direction between the ring-shaped conductors 8a, 8b and the induction antenna 1 and between the ring-shaped conductors 8a, 8b and the plasma, so the coil current varying as the coil current revolves on the coils of the induction antenna 1 can be compensated to improve uniformity of a current on the generated plasma in the peripheral direction. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种等离子体处理装置，其补偿随着线圈电流在线圈上旋转而变化的线圈电流，以改善沿周向产生的等离子体的均匀性。解决方案：环形导体8a，8b布置在包括内周线圈1a和外周线圈1b的感应天线1的附近。环形导体8a，8b的特征在于，来自设备中心的半径和导体的横截面形状根据线圈的旋转角度而不同。在环形导体8a，8b和感应天线1之间以及环形导体8a，8b与等离子体之间的周向位置处，相互电感被抑制，因此线圈电流随着线圈电流在可以对感应天线1的线圈进行补偿，以改善周向上产生的等离子体上的电流的均匀性。版权所有（C）2011，JPO＆INPIT

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