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31. 发明专利

JPS62134647A FOREIGN MATTER CHECKING DEVICE 失效
公开(公告)号：JPS62134647A
公开(公告)日：1987-06-17
申请号：JP27520385
申请日：1985-12-09
申请人： HITACHI LTD
发明人： UTO YUKIO , SHIBA MASATAKA , KOIZUMI MITSUYOSHI , WAKAI KIYOSHI
IPC分类号： H01L21/66 , G01N21/88 , G01N21/94 , G01N21/956 , G03F1/00 , G03F1/84 , H01L21/027 , H01L21/30
摘要： PURPOSE:To detect distinctly sticking of foreign matters to a pellicle and the stuck face with high sensitivity by projecting P and S polarized laser beams to one face of the pellicle at a small angle of incidence and detecting and comparing intensities of scattered light of both polarized beams. CONSTITUTION:The laser light emitted from a laser oscillator 30 goes to a polarized laser light by an optical rotating element 31 and is projected to a pellicle 2 as a light spot 41 at a small angle of incidence through a beam expander 33, a galvanomirror 34, a focusing lens 35, and mirrors 37a and 38a. When a mirror 36 is set on the optical path, the pellicle 2 is irradiated with the laser light spot 41 through mirrors 39, 37b, and 38b. The light spot 41 is scanned in the Y direction and a stage 48 is moved in the X direction to check all of the surface of the pellicle 2. Scattered light of P and S polarized beams from foreign matters is detected by an optical sensor 46 through a cylindrical lens 43, a mirror 44, and an optical fiber 45, and intensities of scattered light of both polarized beams are compared with each other by a processing meter to discriminate whether foreign matters are stuck to the pellicle 2 or not and the sticking face.

32. 发明专利

JPS61278137A ALIGNMENT METHOD FOR SEMICONDUCTOR EXPOSURE DEVICE 失效
公开(公告)号：JPS61278137A
公开(公告)日：1986-12-09
申请号：JP11897185
申请日：1985-06-03
申请人： HITACHI LTD
发明人： NAKADA TOSHIHIKO , OSHIDA YOSHISADA , SHIBA MASATAKA
IPC分类号： H01L21/30 , G03F9/00 , H01L21/027 , H01L21/67 , H01L21/68
摘要： PURPOSE:To reduce the number of alignment optical systems by automatically detecting positions of the (x) direction and (y) direction of each chip on a wafer by one alignment pattern and one alignment detection optical system. CONSTITUTION:Beam light emitted from an Ar laser 45 is reflected by a mirror section 37, and lights an alignment pattern 61 on a wafer 3 through a reduction projection lens 2. Reflected beams from the wafer 3 are reflected by the mirror section 37 on the lower surface of a reticle, and image-formed at a position 39 on just a half mirror 40 on the surface lower than the reticle only by the chromatic aberration section of the reduction projection lens 2 to the wavelength of the Ar laser 45. The image is reflected by a mirror 41, and formed at the front-side focal position 85 of a Fourier transformer lens 19 by a magnifying lens 47. The magnified image of the front-side focal position 85 is complex Fourier-transformed optical by the Fourier transformer lens 19, and complex amplitude distribution thereof is overlapped on an interference pattern 25 on an optical correlation filter 26, thus forming correlation. Complex amplitude distribution is complex Fourier inverse-transformed optically by a Fourier transform lens 28, and an optical peak is detected by a solid-state image pickup element 51.

33. 发明专利

JPS6159829A Reduction projection alignment method and device thereof 失效
标题翻译：减少投影对准方法及其装置
公开(公告)号：JPS6159829A
公开(公告)日：1986-03-27
申请号：JP18053184
申请日：1984-08-31
申请人： Hitachi Ltd
发明人： SHIBA MASATAKA , OSHIDA YOSHISADA , NAKAJIMA NAOTO , UTO YUKIO , NAKADA TOSHIHIKO
IPC分类号： H01L21/30 , G03F9/00 , H01L21/027
CPC分类号： G03F9/7049
摘要： PURPOSE: To obtain high alignment accuracy and a high throughput by inputting projecting beams for a pattern for aligning a wafer from the direction displaced in the lateral direction to a vertical surface passing through an optical axis in a reduction projection lens.
CONSTITUTION: Projecting beams for a pattern for aligning a wafer 3 are inputted from the direction displaced in the lateral direction to a vertical surface 13 passing through an optical axis in a reduction projection lens 2, and projected onto a straight line formed by a surface containing the center 15 of an entrance pupil 35 for the reduction projection lens 2 to the lens 2 and the surface of the entrance pupil. A reflected-beam image from the pattern for aligning the wafer 3 acquired on said straight line through the reduction projection lens 2 and a beam image from a pattern for aligning a reticle 1 are detected by an image pickup means, and the reticle 1 and the wafer 3 are aligned. Accordingly, the accuracy of alignment is not lowered even in the alignment of the position of exposure through which an alignment optical system is moved in the tangential direction or radial direction of a reduction lens, thus obtaining high alignment accuracy and a high throughput.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过输入用于将晶片从横向移位的方向对准通过缩小投影透镜中的光轴的垂直表面的图案的投影光束来获得高对准精度和高产量。构成：用于对准晶片3的图案的投射光从沿横向移位的方向输入到通过还原投影透镜2中的光轴的垂直表面13，并投影到由包含用于缩小投影透镜2到透镜2的入射光瞳35的中心15和入射光瞳的表面。通过图像拾取装置检测来自用于对准通过缩小投影透镜2在所述直线上获取的晶片3的图案的反射光束图像和用于对准标线片1的图案的光束图像，并且光栅1和晶片3对准。因此，即使在对准光学系统沿着减速透镜的切线方向或径向方向移动的曝光位置的对准中，对准的精度也不降低，从而获得高对准精度和高生产量。

34. 发明专利

JPS60222757A FOREIGN MATTER DETECTOR 失效
公开(公告)号：JPS60222757A
公开(公告)日：1985-11-07
申请号：JP7863284
申请日：1984-04-20
申请人： HITACHI LTD
发明人： UTO YUKIO , SHIBA MASATAKA , OSHIDA YOSHISADA
IPC分类号： G01N21/88 , G01N21/94 , G01N21/956 , H01L21/027 , H01L21/66
摘要： PURPOSE:To enable accurate detection of foreign matters existing on a substrate with an easy detection and treatment thereof regardless of vertical vibrations in the substrate during the scanning by scanning the surface of the substrate with a beam spot of a parallel light flux. CONSTITUTION:After passed sequentially through a polarizing plate 16 and a condenser lens 15, a laser light from a laser oscillator 14 is reflected totally from a galvano-mirror 17 vibrated rotatively by a triangular wave signal and enters the surface of a foreign matter attachment prevention film 23 slatly as laser spot through a collimator lens 18. A means of detecting a scattering light 21 from a foreign matter 20 comprises an image formation lens 26, a shield plate (not illustrated) and a selfscan storage type photoelectric converter 27 containing a one-dimentional linear sensor and they are so arranged as to face the scan line 22 of the laser spot slantly from above. Therefore, when any foreign matter 22 exists on the scan line 22, the intensity of the scattering light 21 from the foreign matter 20 is accumulated and detected.

35. 发明专利

JPS5943521A Optical system of illumination for exposing device 失效
标题翻译：曝光装置照明光学系统
公开(公告)号：JPS5943521A
公开(公告)日：1984-03-10
申请号：JP15270182
申请日：1982-09-03
申请人： Hitachi Ltd
发明人： SHIBA MASATAKA , OSHIDA YOSHISADA
IPC分类号： G03B27/54 , G03F7/20 , H01L21/027 , H01L21/30
CPC分类号： G03F7/70583
摘要： PURPOSE:To contrive improvement in the resolving property of a projection optical system by a method wherein, in the case of a transparent sheet glass for scattering having directivity which is placed in an optical path, no change is made in the thickness of the plate glass to be used for the beam of light in longitudinal direction, and a roughened surface is provided for the sheet glass to be used for the beam of light in sphereless direction, thereby enabling to increase the non-coherence property of the beam of light in sphereless direction. CONSTITUTION:The beam of light in sphereless direction alone is scattered and no scattering is generated for the beam of light in longitudinal direction. To be more precise, a transparent scattering sheet glass is placed in an optical path and no scattering is generated unless a change is made in the thickness of the sheet glass, as shown in the diagram (a), and on the other hand, scattering is generated for the beam of light in sphereless direction as shown in the diagram (b) by providing irregular surface. In order to generate the scattering of light as above-mentioned with the plate glass having the thickness of (t) as shown in the diagram (c), the formula t(gamma, theta)=f(theta) is used. Also, theta is changed to periodic function in order to reduce the non-uniformity of the irradiated light in circular arc.
摘要翻译：目的：通过以下方法改进投影光学系统的分辨性的改进：其中，在放置在光路中的具有方向性的散射用透明板玻璃的情况下，不会改变平板玻璃的厚度用于长轴方向的光束，并且为无光方向的光束使用的玻璃板提供粗糙化表面，从而能够增加无球形光束的非相干性能方向。构成：单独的无球方向的光束是散射的，并且在纵向方向上对于光束不产生散射。更准确地说，如图（a）所示，透明散射片状玻璃被放置在光路中，除非平板玻璃的厚度发生变化，否则不产生散射，另一方面，散射通过提供不规则表面，如图（b）所示，针对无球方向的光束产生。为了如图（c）所示，用厚度为（t）的平板玻璃产生如上所述的光的散射，则使用公式t（γ，θ）= f（θ）。此外，为了减少圆弧中照射的光的不均匀性，将θ改变为周期性的功能。

36. 发明专利

JPS5912341A Device for detecting foreign matter 失效
标题翻译：用于检测外部事项的设备
公开(公告)号：JPS5912341A
公开(公告)日：1984-01-23
申请号：JP12046782
申请日：1982-07-13
申请人： Hitachi Ltd
发明人： UTO YUKIO , AKIYAMA NOBUYUKI , SHIBA MASATAKA
IPC分类号： G01N21/88 , G01N21/94 , G01N21/956 , H01L21/027 , H01L21/66
CPC分类号： G01N21/94 , G01N2021/95676
摘要： PURPOSE:To detect a foreign matter excellently even though a sample is coated by a foreign matter attachment preventing film, by providing light detectors on both sides of the scanning direction, and switching and using the light detectors in correspondence with the scanning position. CONSTITUTION:A linear pattern, whose cross section is of a trapezoidal shape, is formed on a plane shaped sample (reticle) 1. With the reticle 1 being moved in the (x) direction, laser 5 is reflected by a galvanomirror 4. A laser spot 6 is formed on the surface of the reticle 1 through a lens 14. The spot 6 is made to scan in the (y) direction on the surface of the reticle 1, which is covered by a foreign matter attachment preventing film 9. Light detector s 2 and 3 are arranged at one end of the scanning direction, and light detectors 12 and 13 are arranged on the other side. The light detectors are provided at obliquely upper part from the reticle 1, and detect the scattered light from the foreign matter without being shielded by a supporting frame 10. During the period the spot 6 is scanning a region (a), the light detector 2 and 3 are used. During the time when a region (b) is scanned, the light detectors 12 and 13 are used. In this way, the detectors are switched and used.
摘要翻译：目的：通过在扫描方向的两侧设置光检测器，并且与扫描位置对应地切换和使用光检测器，即使样品被异物附着防止膜涂覆，也能够良好地检测异物。构成：横截面为梯形的线状图案形成在平面状样品（标线片）1上。在标线片1沿（x）方向移动的同时，激光器5被电流镜4反射。激光点6通过透镜14形成在标线片1的表面上。使点6沿着被异物附着防止膜9覆盖的掩模版1的表面沿（y）方向扫描。光检测器s 2和3布置在扫描方向的一端，光检测器12和13布置在另一侧。光检测器设置在距掩模版1的倾斜上部，并且检测来自异物的散射光，而不被支撑框架10屏蔽。在点6扫描区域（a）的期间，光检测器2 和3。在扫描区域（b）的时间期间，使用光检测器12和13。以这种方式，检测器被切换和使用。

37. 发明专利

JPH11168126A MANUFACTURE OF ELECTRONIC DEVICE AND FOREIGN SUBSTANCE ANYALYZER THEREOF 失效
公开(公告)号：JPH11168126A
公开(公告)日：1999-06-22
申请号：JP33266597
申请日：1997-12-03
申请人： HITACHI LTD
发明人： IBE HIDEFUMI , WATANABE KENJI , SHIMASE AKIRA , SHIBA MASATAKA , SAKAMOTO TSUTOMU
IPC分类号： G01B15/00 , G01B15/08 , G01N23/225 , G01N23/227 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To specify the cause of generation of a foreign substance on a semiconductor device and a failure of the device due to the foreign substance in a short time, by a method wherein the section of the foreign substance on the device is made to expose and the section of the foreign substance, and constituent elements and structure of a film adjacent to the foreign substance are specified. SOLUTION: While section of a foreign substance is verified by an SEH, a foreign substance section 6 and the structure of a film on the periphery of the section 6 are made to expose by an FIB. An analysis of the elements on a line 9 including the foreign substance 6 and the films 7 and 8 above and below the substance 6 is made by an AES and the constituent elements of the substance 6 and the components of the films 7 and 8 above and below the substance 6 are measured. In this way, since the materials constituting the films 7 and 8 above and below the substance 6, the thicknesses of the films 7 and 8 and the like are known, a process of the generation of the foreign substance is known by associating the materials, the thicknesses and the like with the production process of a product recorded with the materials used for the product and a film-forming thickness. A device used in a process to correspond to the record of the history of a wafer can be specified from the record and the operation conditions of the device and the like are also known. Accordingly, as it becomes possible to analyze a failure of a high-integration degree semiconductor device due to the foreign substance on the device in a short time, a rise of the production line of the device in a short period becomes possible.

38. 发明专利

JPH08255749A EXPOSURE METHOD 失效
公开(公告)号：JPH08255749A
公开(公告)日：1996-10-01
申请号：JP1140196
申请日：1996-01-26
申请人： HITACHI LTD
发明人： UTO YUKIO , SHIBA MASATAKA , OSHIDA YOSHITADA
IPC分类号： G01N21/88 , G01N21/94 , G01N21/956 , G03F7/20 , H01L21/027 , H01L21/66 , H01L21/677 , H01L21/68
摘要： PURPOSE: To enable high yield exposure to an exposure substrate by exposing an exposure substrate after carrying and positioning a substrate in an exposure position without a foreign matter which is a hindrance to exposure on a surface of a substrate and on a foreign matter attaching prevention film mounted on a substrate with a frame between. CONSTITUTION: A substrate 39 is cleaned, and the substrate 39 whereon a foreign matter attaching prevention film 23 is mounted with a frame 24 between is contained in a magazine 6 put in a cassette without a foreign matter in a presence surface or an absence surface of a circuit pattern. A substrate is unloaded one by one in an exposure process. Meanwhile, if an upper foreign matter inspection device 1 and a lower foreign matter inspection device 2 inspect the absence of a foreign matter, a transfer arm 3 is turned in a direction of an arrow 7a and put in an exposure position and a chip is transferred on an exposure substrate 11 one by one through an exposure optical system 10. After an exposure process is finished, the substrate 39 is contained in a cassette inside the magazine 6 again.

39. 发明专利

JPH07320998A METHOD AND DEVICE FOR DETECTING STEPPED PATTERN 失效
公开(公告)号：JPH07320998A
公开(公告)日：1995-12-08
申请号：JP6013192
申请日：1992-03-17
申请人： HITACHI LTD
发明人： NAKADA TOSHIHIKO , OSHIDA YOSHITADA , SHIBA MASATAKA
IPC分类号： G01B11/24 , G01B11/00 , G03F9/00 , H01L21/027 , H01L21/68
摘要： PURPOSE:To stably detect the position of a stepped pattern formed on a sample or its geometric information with high accuracy. CONSTITUTION:An interference pattern 53 obtained when an alignment pattern 48 is irradiated with light 41 has a large signal change, because the influence of the interference between reflected light 50 mainly from the boundary 47 between a stepped pattern and photoresist 46 and reflected light 52 from a semitransparent mirror 51 is the strongest and the phase changes by the height (e) of a step at the stepped part of the pattern 48. Therefore, the center position of the pattern 48 can be found with high accuracy from the changes of photoelectrically converted signals against the pattern 53.

40. 发明专利

JPH0612753B2 失效
公开(公告)号：JPH0612753B2
公开(公告)日：1994-02-16
申请号：JP24386683
申请日：1983-12-26
申请人： HITACHI LTD
发明人： OSHIDA YOSHITADA , NAKADA TOSHIHIKO , SHIBA MASATAKA
IPC分类号： H01L21/30 , G03F9/00 , H01L21/027

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