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21. 发明专利

JP2008141180A Semiconductor light emitting device, optical pickup device, and information recording/reproducing device 有权
标题翻译：半导体发光器件，光学拾取器件和信息记录/再现器件
公开(公告)号：JP2008141180A
公开(公告)日：2008-06-19
申请号：JP2007277867
申请日：2007-10-25
申请人： Sony Corp , ソニー株式会社
发明人： FURUSHIMA YUJI , ABE HIROAKI , KUDO HISASHI , FUJIMOTO TSUTOMU , AOSHIMA KENTARO
IPC分类号： H01S5/022
CPC分类号： H01S5/4043 , B82Y20/00 , G11B7/1275 , G11B2007/0006 , H01L2224/48091 , H01L2224/48464 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/02476 , H01S5/0425 , H01S5/2214 , H01S5/2224 , H01S5/3432 , H01S5/34326 , H01S5/34333 , H01S5/4087 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device miniaturized by devising the location of connection pads. SOLUTION: A second light emitting device 30 comprises a stripe-shaped semiconductor layer 32 which is formed by superposing with a first light emitting device 20 and is formed in the opposite surface side to the first substrate of the second substrate 31, a stripe-shaped p lateral electrode 36 which supplies current to the semiconductor layer 32, stripe-shaped opposed electrodes 42, 44 which are located one-by-one opposite to respective p lateral electrodes 26A, 26B of the first light emitting device 20, and electrically connected with each other, connection pads 46, 48 electrically connected with the respective opposed electrodes 42, 44, and a connection pad 39 electrically connected with the p lateral electrode 36. The connection pads 39, 46, 48 are located in parallel with the opposed electrodes 42, 44. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供通过设计连接焊盘的位置来小型化的半导体发光器件。解决方案：第二发光器件30包括条形半导体层32，其通过与第一发光器件20重叠形成并形成在与第二衬底31的第一衬底相反的表面侧中，向半导体层32供给电流的条状p侧面电极36，与第一发光装置20的各个p侧面电极26A，26B相反一个位置的条状的对置电极42,44，以及彼此电连接，与相应的相对电极42,44电连接的连接焊盘46,48以及与p侧电极36电连接的连接焊盘39.连接焊盘39,46,48与对置电极42,43。（C）2008，JPO＆INPIT

22. 发明专利

JP2008053649A Buried semiconductor laser 审中-公开
标题翻译： BURIED SEMICONDUCTOR激光
公开(公告)号：JP2008053649A
公开(公告)日：2008-03-06
申请号：JP2006231125
申请日：2006-08-28
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TAKIGUCHI TORU , WATAYA TSUTOMU
IPC分类号： H01S5/227
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/2224 , H01S5/2227 , H01S5/2275 , H01S5/3072
摘要： PROBLEM TO BE SOLVED: To reduce leakage current of buried semiconductor laser and improve current light output characteristics.
SOLUTION: The buried semiconductor laser 1 is formed of a p-type InP substrate 2 and has a ridge 6 consisting of a first clad layer 3 made of p-type InP, an AlGaInAs distortion quantum well active layer 4 and a second clad layer 5 made of n-type InP which are laminated. A buried current block layer 10 in which a first buried layer 7 made of p-type InP, a second buried layer 8 made of n-type InP and a third buried layer 9 made of semi-insulated Fe-doped InP are sequentially laminated is formed on both sides of the ridge 6. The upper surface of the third buried layer 9 is covered with a semiconductor layer 11 made of n-type InP. This structure can prevent a leakage current path from occurring on the upper surface of the third buried layer 9 and improve the reliability of the buried semiconductor laser.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：减少埋地半导体激光器的漏电流，提高电流光输出特性。解决方案：埋入半导体激光器1由p型InP衬底2形成，并且具有由p型InP构成的第一覆盖层3，AlGaInAs失真量子阱有源层4和第二覆盖层3构成的脊6 由n型InP制成的覆层5层压。埋入电流阻挡层10，其中由p型InP制成的第一掩埋层7，由n型InP制成的第二掩埋层8和由半绝缘的Fe掺杂的InP制成的第三掩埋层9依次层压形成在脊6的两侧。第三掩埋层9的上表面被由n型InP制成的半导体层11覆盖。这种结构可以防止在第三掩埋层9的上表面上发生漏电流路径，并提高掩埋半导体激光器的可靠性。版权所有（C）2008，JPO＆INPIT

23. 发明专利

JP2008047672A Semiconductor opto-electrical device 审中-公开
标题翻译： SEMICONDUCTOR OPTO-ELECTRICAL DEVICE
公开(公告)号：JP2008047672A
公开(公告)日：2008-02-28
申请号：JP2006221213
申请日：2006-08-14
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HASHIMOTO JUNICHI
IPC分类号： H01S5/223
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/209 , H01S5/2224 , H01S5/34306 , H01S5/34353
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser having a ridge structure wherein an electric current is confined without using a pn junction.
SOLUTION: A first conductive clad layer 13 is formed on the principal plane 15a of a GaAs substrate 15. Then, a light emission region 17 is formed on the first conductive clad layer 13. The light emission region 17 has a principal plane 17a which includes a first and a second areas 17b and 17c. A second conductive clad region 19 has a first portion 19a of the ridge geometry, and is located on the first area 17b. A current blocking region 21 is located on the second area 17c, and consists of an undoped group III-V compound semiconductor which is either GaInP or AlGaInP. GaInP and AlGaInP, each have a high resistance value, and are grown at a low temperature of 600°C or below. The undoped group III-V compound semiconductor has a resistivity of 10
5 Ωcm or above.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有脊状结构的半导体激光器，其中电流被限制而不使用pn结。解决方案：在GaAs衬底15的主平面15a上形成第一导电覆层13.然后，在第一导电覆层13上形成发光区17.发光区17具有主平面 17a包括第一和第二区域17b和17c。第二导电包覆区域19具有脊几何形状的第一部分19a，并且位于第一区域17b上。电流阻挡区域21位于第二区域17c上，并且由未掺杂的III-V族化合物半导体组成，其为GaInP或AlGaInP。 GaInP和AlGaInP各自具有高电阻值，并且在600℃或更低的低温下生长。未掺杂的III-V族化合物半导体的电阻率为10Ω/ cm以上。版权所有（C）2008，JPO＆INPIT

24. 发明专利

JP2008021705A Self-pulsating semiconductor laser and its manufacturing method 审中-公开
标题翻译：自激半导体激光器及其制造方法
公开(公告)号：JP2008021705A
公开(公告)日：2008-01-31
申请号：JP2006190211
申请日：2006-07-11
申请人： Nec Electronics Corp , Necエレクトロニクス株式会社
发明人： KOBAYASHI MASAHIDE
IPC分类号： H01S5/065
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/065 , H01S5/2206 , H01S5/222 , H01S5/2222 , H01S5/2224 , H01S5/305 , H01S5/3054 , H01S5/3211 , H01S5/3432 , H01S5/34326 , H01S5/3436 , H01S5/4087 , H01S2301/02 , H01S2301/18
摘要： PROBLEM TO BE SOLVED: To provide a self-pulsating semiconductor laser which can stably keep self-pulsation in a wide temperature range.
SOLUTION: The self-pulsating semiconductor laser is provided with a lower clad layer 103 formed on a semiconductor substrate 101, an active layer 105 formed on the lower clad layer 103, a first upper clad layer 107 formed on the active layer 105, a second upper clad layer 109 formed on the first upper clad layer 107, and a block layer BLK. The second upper clad layer 109 has a mesa structure MS. The block layer BLK is formed on both sides of the second upper clad layer 109, and it includes a layer 111 with a larger band gap than the active layer 105. During self pulsation, a saturable absorption area 115 is formed on both sides of a gain area 114 in the active layer 105. The thickness (d) of the first upper clad layer 107 is designed to be more than 220 nm and less than 450 nm.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在宽温度范围内稳定地保持自脉动的自脉动半导体激光器。＆lt; P＆gt;解决方案：自脉动半导体激光器设置有形成在半导体衬底101上的下覆盖层103，形成在下覆盖层103上的有源层105，形成在有源层105上的第一上覆盖层107 形成在第一上覆盖层107上的第二上覆盖层109和阻挡层BLK。第二上覆层109具有台面结构MS。阻挡层BLK形成在第二上覆盖层109的两侧，并且其包括具有比有源层105更大的带隙的层111.在自脉动期间，在a的两侧形成可饱和吸收区域115 有源层105中的增益区域114.第一上覆层107的厚度（d）设计为大于220nm且小于450nm。版权所有（C）2008，JPO＆INPIT

25. 发明专利

JP2005333144A Photonic integrated device using reverse-mesa structure and method for fabricating same 审中-公开
标题翻译：使用反向MESA结构的光电集成装置及其制造方法
公开(公告)号：JP2005333144A
公开(公告)日：2005-12-02
申请号：JP2005147644
申请日：2005-05-20
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： PARK BYUNG HUN , BAE YU-DONG , KIM IN , KYO HEIKEN , KIM YOUNG-HYUN , LEE SANG-MOON
IPC分类号： H01S5/042 , G02B6/12 , H01S3/08 , H01S5/026 , H01S5/22 , H01S5/227 , H01S5/323
CPC分类号： H01S5/026 , H01S5/0264 , H01S5/0265 , H01S5/2224 , H01S5/227 , H01S5/2275 , H01S5/32333
摘要： PROBLEM TO BE SOLVED: To provide a photonic integrated device using a reverse-mesa structure and a method for fabricating the same, which is capable of simplifying a fabricating process for the photonic integrated device while reducing serial resistance of the device.
SOLUTION: This photonic integrated device using a reverse-mesa structure comprises: a first conductive substrate 21 on which a semiconductor laser, an optical modulator, a semiconductor optical amplifier, and a photo detector are integrated; a first conductive clad layer 22 and an active layer 23 sequentially formed on the first conductive substrate 21 in the form of a mesa structure; a second conductive clad layer 24 formed on the active layer in the form of a reverse-mesa structure; an ohmic contact layer 25 formed on the second clad layer 24 in such a manner that the ohmic contact layer has a width narrower than the width of an upper surface of the second conductive clad layer; a current shielding layer 28 filled in a sidewall having a mesa and reverse-mesa structure; and at least one window area formed between the above integrated elements.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种使用逆台面结构的光子集成器件及其制造方法，其能够简化光子集成器件的制造工艺，同时降低器件的串联电阻。解决方案：使用反台面结构的该光子集成器件包括：集成有半导体激光器，光调制器，半导体光放大器和光检测器的第一导电基板21; 顺序地形成在第一导电基板21上的第一导电覆层22和有源层23，其形式为台面结构; 形成在反面台面结构形式的有源层上的第二导电覆层24; 形成在第二覆盖层24上的欧姆接触层25，使得欧姆接触层的宽度比第二导电覆层的上表面的宽度窄; 填充在具有台面和反台面结构的侧壁中的电流屏蔽层28; 以及形成在上述集成元件之间的至少一个窗口区域。版权所有（C）2006，JPO＆NCIPI

26. 发明专利

JP2004281686A Semiconductor light emitting device and its manufacturing method 审中-公开
公开(公告)号：JP2004281686A
公开(公告)日：2004-10-07
申请号：JP2003070492
申请日：2003-03-14
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： ITO MASAFUMI
IPC分类号： C23C14/06 , H01L27/15 , H01S5/02 , H01S5/026 , H01S5/028 , H01S5/042 , H01S5/22 , H01S5/227
CPC分类号： H01S5/028 , H01S5/0202 , H01S5/0265 , H01S5/0421 , H01S5/2205 , H01S5/2224 , H01S5/2275
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device having an antireflection film of a small thickness at an end surface, and to provide a method for manufacturing the same.
SOLUTION: The semiconductor light emitting device 1 comprises a semiconductor light emitting device 2a having first and second end surfaces 3a, 3b, and an antireflection film 5a provided at the first end surface 3a. The antireflection film 5a comprises a first layer 7a and a second layer 7b. The first layer 7a is provided between the first end surface 3a and the second layer 7b. The refractive index of the material of the first layer 7a is smaller than that of the material of the second layer 7b.
COPYRIGHT: (C)2005,JPO&NCIPI

28. 发明专利

JP2004047743A Optical integrated device 审中-公开
公开(公告)号：JP2004047743A
公开(公告)日：2004-02-12
申请号：JP2002203372
申请日：2002-07-12
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： IKEDA SHIGEAKI , YAMAGUCHI TAKEJI , ARAKAWA TOMOSHI
IPC分类号： G02F1/017 , H01S5/026 , H01S5/12 , H01S5/22 , H01S5/34 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0265 , H01S5/12 , H01S5/2222 , H01S5/2224 , H01S5/2226 , H01S5/3072 , H01S5/3409 , H01S5/34306
摘要： PROBLEM TO BE SOLVED: To provide an optical integrated device in which an electric field absorption type optical modulator has a good reverse breakdown voltage characteristic and a high extinction ratio at a low reverse bias voltage. SOLUTION: A non-doped InP layer 24 is formed between an n-InP hole block layer 23 and a p-InP upper clad layer 25. The non-doped InP layer 24 depletes this region, and moderates the electric field between the n-InP hole block layer 23 and the p-InP upper clad layer 25 in the EA optical modulator region 10B. COPYRIGHT: (C)2004,JPO

29. 发明专利

JP6244667B2 量子カスケードレーザ有权
公开(公告)号：JP6244667B2
公开(公告)日：2017-12-13
申请号：JP2013115868
申请日：2013-05-31
申请人：住友電気工業株式会社
发明人：橋本順一 , 村田道夫
IPC分类号： H01S5/227 , H01S5/40
CPC分类号： H01S5/3401 , H01S5/2275 , H01S5/3402 , H01S5/34313 , B82Y20/00 , H01S5/12 , H01S5/2213 , H01S5/2224 , H01S5/4031 , H01S5/4068 , H01S5/4087

30. 发明专利

JP2017130657A 光半導体素子の製造方法および光半導体素子审中-公开
公开(公告)号：JP2017130657A
公开(公告)日：2017-07-27
申请号：JP2017003579
申请日：2017-01-12
申请人：住友電工デバイス・イノベーション株式会社
发明人：渡邊孝幸
IPC分类号： H01S5/227
CPC分类号： H01S5/2277 , H01L21/02543 , H01L21/0262 , H01L21/02636 , H01S5/2272 , H01S5/2275 , H01S5/3013 , H01S5/305 , H01S5/3202 , H01S5/3434 , H01S2301/176 , H01S2304/04 , H01S5/0422 , H01S5/0425 , H01S5/2224 , H01S5/2226 , H01S5/3054 , H01S5/3213 , H01S5/34306
摘要：【課題】内部直列抵抗を低減し得る光半導体素子の製造方法および光半導体素子を提供する。【解決手段】光半導体素子1Aは、第1導電型の第1クラッド層5、活性層7、及び第2導電型の第2クラッド層9aを含むメサ構造4と、メサ構造4の両側に設けられ、第1クラッド層5及び活性層7の各側面を少なくとも覆う第2導電型もしくは高抵抗の第1埋め込み層9bと、第1埋め込み層9b上に設けられた第1導電型の第2埋め込み層11と、第2埋め込み層11及びメサ構造4上に設けられた第2導電型の第3クラッド層と、を備える。第1埋め込み層9bの第2埋め込み層11側の界面は、メサ構造4の両側に形成されたメサ溝底面と同じ面方位を有し活性層7よりも高い位置に形成された平坦な領域9cをメサ構造4の両側に含む。領域9c上の第2埋め込み層11は、領域9cを除く界面上の第2埋め込み層11よりも薄い。【選択図】図3

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