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21. 发明专利

JP2014029988A Magnetic sensor 有权
标题翻译：磁传感器
公开(公告)号：JP2014029988A
公开(公告)日：2014-02-13
申请号：JP2013124820
申请日：2013-06-13
申请人： Denso Corp , 株式会社デンソー
发明人： YANO SATOSHI , FURUICHI TAKAMOTO
IPC分类号： H01L43/08 , G01R33/09
CPC分类号： G01R33/098 , G01R33/09 , G01R33/093 , H01F10/3254 , H01F10/3295 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To suppress influence of leakage field from a pin layer 15 to free layers 17a and 17b in a magnetic sensor 10.SOLUTION: With respect to a wiring layer 14, the pin layer 15 is formed in a shape with a curved cross section for covering the wiring layer 14 from a side opposite to a substrate 11. With respect to the pin layer 15, the free layers 17a and 17b are arranged at a side opposite to the substrate 11. Sizes of the free layers 17a and 17b in a plane direction are set to sizes smaller than that of the pin layer 15 in the plane direction. The leakage field from the pin layer 15 can form a closed loop on the substrate 11 side (opposite to the free layers 17a and 17b with respect to the pin layer 15). Accordingly, the influence of the leakage field from the pin layer 15 to the free layers 17a and 17b can be suppressed.
摘要翻译：要解决的问题：抑制磁性传感器10中的针层15到自由层17a和17b的泄漏场的影响。解决方案：对于布线层14，销层15形成为具有弯曲横截面用于从与基板11相对的一侧覆盖布线层14.相对于引脚层15，自由层17a和17b布置在与基板11相对的一侧。自由层17a和17b的尺寸在平面方向上的尺寸设定为小于销层15在平面方向上的尺寸。来自销层15的漏电场可以在基板11侧（与自由层17a和17b相对于销层15相对）上形成闭环。因此，可以抑制从针层15到自由层17a和17b的泄漏场的影响。

22. 发明专利

JP5411281B2 Method for manufacturing a magneto-resistive element 有权
公开(公告)号：JP5411281B2
公开(公告)日：2014-02-12
申请号：JP2011530743
申请日：2010-09-03
申请人：株式会社アルバック , 国立大学法人東北大学
发明人：直志山本 , 英男大野 , 正二池田
IPC分类号： H01L21/3065 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/12
CPC分类号： H01F41/307 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B2005/3996 , H01F10/3254 , H01F10/3268 , H01L43/12

23. 发明专利

JP5339468B2 Spin transistor and a method of driving the same 有权
公开(公告)号：JP5339468B2
公开(公告)日：2013-11-13
申请号：JP2010533004
申请日：2008-11-04
申请人：サムスンエレクトロニクスカンパニーリミテッド
发明人：キ−ハ・ホン , スン−フン・イ , ジョン−ソブ・キム , ジャイ−クァン・シン
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82
CPC分类号： H01L29/66984 , B82Y25/00 , H01F1/401 , H01F1/404 , H01F10/1933 , H01F10/1936 , H01F10/3254 , H01F10/3295 , H01L29/82
摘要： A spin field effect transistor may include at least one gate electrode, a channel layer, a first stack and a second stack separate from each other on a substrate, wherein the channel layer is formed of a half metal. The half metal may be at least one material selected from the group consisting of chrome oxide (CrO2), magnetite (Fe3O4), a double perovskite structure material, a Heusler alloy, NiMnSb, La(1-x)AxMnO3 (A=Ca, Ba, Sr, x˜0.3), and GaN doped with Cu, and the double perovskite structure material is expressed as a chemical composition of A2BB′O6, and a material corresponding to A is Ca, Sr, or Ba, a material corresponding to B is a 3d orbital transition metal, and a material corresponding to B′ is a 4d orbital transition metal. The 3d orbital transition metal may be Fe or Co, and the 4d orbital transition metal is Mo or Re.

24. 发明专利

JP2013541219A Writable magnetic elements 审中-公开
公开(公告)号：JP2013541219A
公开(公告)日：2013-11-07
申请号：JP2013535538
申请日：2011-10-11
申请人：サントルナショナルドゥラルシェルシュシアンティフィク , コミサリアアレネルジィアトミークエオゼネルジイアルテアナティーフCommissariat A L’Energie Atomique Et Aux Energies Alternatives , ユニヴェルシテジョセフフーリエ , インスティトゥートカタラデナノテクノロジア(アイシーエヌ) , インスティトゥシオカタラーナデレセルカイエストゥディスアバンカツ (アイシーアールイーエー)
发明人：ジルルイゴダン , ヨアンミハイミロン , ピエトロガンバルデッラ , アランシュール
IPC分类号： H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , G11C11/18 , H01F10/325 , H01F10/3254
摘要： The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting magnetization having a magnetization direction that is parallel to the plane of the central layer, which layer is sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, and wherein it includes a device to cause a write current to pass through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer at an angle α lying in the range 90°±60°, in particular 90°±30°, and more particularly 90°±15° relative to said magnetization direction in order to generate an effective magnetic field in the central layer, the current being applied either in a first direction or in a second direction opposite to the first, in order to orient the magnetization direction in a first magnetization direction or in a second magnetization direction opposite to the first.

25. 发明专利

JP2013539602A Magnetic device and its reading and writing method 审中-公开
公开(公告)号：JP2013539602A
公开(公告)日：2013-10-24
申请号：JP2013526464
申请日：2011-08-31
申请人：コミッサリアアレネルジアトミックエオエネルジアルテルナティヴCommissariat a lenergie atomique et aux energies alternatives
发明人：ディーニー，ベルナール
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： G11C11/161 , B82Y25/00 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/329 , H01L27/228 , H01L43/08 , Y10S977/933 , Y10S977/935
摘要：本発明は、磁化方向が固定されている基準層（２）、および磁化方向が可変である記憶層（３）を備える磁気デバイスに関する。書き込みモードにおいては、記憶層（３）の磁化方向は、前記記憶層に「１」または「０」を格納するように記憶層の磁化方向が変えられる。読み出しモードにおいては、記憶層（３）に何が格納されているかが分かるように磁気デバイスの抵抗が測定される。磁気デバイスは、また、特に、磁化方向が可変である制御層（４）を備える。制御層（４）の磁化方向は、書き込みイベントの際には、記憶層（３）へのスピントランスファートルクの有効性が増大することが望ましく、記憶層（３）に含まれる情報の読み出しイベントの際には、記憶層（３）へのスピントランスファートルクの有効性が減少し、前記情報を変更しないことが望ましい。
【選択図】図１

26. 发明专利

JP2013533646A It provides methods and systems for magnetic tunneling junction device with a biaxial anisotropy 有权
公开(公告)号：JP2013533646A
公开(公告)日：2013-08-22
申请号：JP2013524092
申请日：2011-07-28
申请人：グランディスインコーポレイテッドGrandis,Inc.
发明人：ドミトロ・アパルコフ
IPC分类号： H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3286 , H01F10/3295
摘要： A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer has a magnetic anisotropy, at least a portion of which is a biaxial anisotropy. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

27. 发明专利

JP5259742B2 A method of forming a magnetic tunnel junction device 有权
公开(公告)号：JP5259742B2
公开(公告)日：2013-08-07
申请号：JP2010549735
申请日：2009-02-27
申请人：クゥアルコム・インコーポレイテッドQualcomm Incorporated
发明人：リ、シャ
IPC分类号： H01L21/8246 , G11C11/15 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/5607 , G11C2211/5615 , H01F10/3254 , H01F41/308 , H01L27/222 , H01L43/08

28. 发明专利

JP5232206B2 Magneto-resistive element and a magnetic random access memory 有权
公开(公告)号：JP5232206B2
公开(公告)日：2013-07-10
申请号：JP2010211204
申请日：2010-09-21
申请人：株式会社東芝
发明人：公二上田 , 正甲斐 , 俊彦永瀬 , 勝哉西山 , 英二北川 , 忠臣大坊 , 真長嶺 , 博明與田
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L43/08 , G11C11/16 , G11C11/1659 , H01F10/123 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes an electrode layer, a first magnetic layer, a second magnetic layer and a nonmagnetic layer. The electrode layer includes a metal layer including at least one of Mo, Nb, and W. The first magnetic layer is disposed on the metal layer to be in contact with the metal layer and has a magnetization easy axis in a direction perpendicular to a film plane and is variable in magnetization direction. The second magnetic layer is disposed on the first magnetic layer and has a magnetization easy axis in the direction perpendicular to the film plane and is invariable in magnetization direction. The nonmagnetic layer is provided between the first and second magnetic layers. The magnetization direction of the first magnetic layer is varied by a current that runs through the first magnetic layer, the nonmagnetic layer, and the second magnetic layer.

29. 发明专利

JP5214765B2 Magneto-resistive element and a magnetic memory 有权
公开(公告)号：JP5214765B2
公开(公告)日：2013-06-19
申请号：JP2011068853
申请日：2011-03-25
申请人：株式会社東芝
发明人：坊忠臣大 , 野実天 , 田大輔才 , 藤順一伊 , 沢裕一大 , 田親義鎌 , 田沙織柏 , 田博明與
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： H01L43/02 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08 , H01L43/10

30. 发明专利

JP2013120915A Spin-wave waveguide and spin-wave operation circuit 有权
标题翻译：旋转波形和旋转波形操作电路
公开(公告)号：JP2013120915A
公开(公告)日：2013-06-17
申请号：JP2011269558
申请日：2011-12-09
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ITOU AKITOMO , YAMADA MASATAKA , OGAWA SUSUMU
IPC分类号： H01L29/82 , H01F10/16 , H01F10/32 , H01L43/08
CPC分类号： H01P3/165 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01L27/22 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide: an ultra-low power consumption spin-wave waveguide compatible with an existing synchronous processing unit; and an operation circuit using the spin-wave waveguide.SOLUTION: A spin-wave waveguide is configured to form a part of a wire-shaped ferromagnetic thin film having a large thickness at one end of the ferromagnetic thin film, and alternately form a part having a small thickness and a part having a large thickness at least one cycle or more on the same plane. A part of the ferromagnetic thin film having a small thickness is formed at the other end of the wire-shaped ferromagnetic thin film. An insulating film and an electrode film are laminated one upon another in this order at the part of the film having the small thickness. A magnetic anisotropy of the part of the film having the large thickness is parallel to the film surface. A magnetic anisotropy of the part of the film having the large thickness is perpendicular to the film surface. A spin-wave operation circuit uses the spin-wave waveguide.
摘要翻译：要解决的问题：提供：与现有的同步处理单元兼容的超低功耗自旋波导; 以及使用该自旋波导的运算电路。解决方案：自旋波导被配置为在铁磁薄膜的一端形成具有大厚度的线状铁磁薄膜的一部分，并且交替地形成具有小厚度的部分和具有在同一平面上具有至少一个循环或更大的厚度的厚度。在线状铁磁性薄膜的另一端形成厚度较小的铁磁性薄膜的一部分。绝缘膜和电极膜依次层叠在厚度薄的部分。具有大厚度的膜的部分的磁各向异性平行于膜表面。具有大厚度的膜的一部分的磁各向异性垂直于膜表面。自旋波运算电路使用自旋波导。版权所有（C）2013，JPO＆INPIT

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