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21. 发明专利

JPS6299761A ELECTROPHOTOGRAPHIC SENSITIVE BODY 失效
公开(公告)号：JPS6299761A
公开(公告)日：1987-05-09
申请号：JP23980585
申请日：1985-10-26
申请人： TOSHIBA CORP
发明人： YOSHIZAWA HIDEJI , KAGA HIDEKAZU , MITANI WATARU , YAMAZAKI MUTSUKI
IPC分类号： G03G5/08 , G03G5/082
摘要： PURPOSE:To obtain the photoconductive material which is capable of being produced with ease, and has a high resistance and excellent electrostatic chargeability, and has high photosensitive characteristics in ranges of a visible ray and a near infra-red ray by forming a blocking layer of an amorphous silicon or a microcrystalline silicon and a photoconductive layer of a laminating body composed of the N-type amorphous silicon contg. a hydrogen and the microcrystalline silicon respectively. CONSTITUTION:The blocking layer 103 composed of muC-Si or a-Si contg. the silicon atom as a base material and contg. the hydrogen atom and at least one or more atoms selected from a carbon, an oxygen and a nitrogen atoms and the photoconductive layer 102 are laminated on a conductive substrate body 101 made of aluminium. The photoconductive layer 102 is produced by laminating the N-type amorphous silicon a-Si layer 104 contg. the silicon atom as the base material and contg. the hydrogen atom, and the microcrystalline silicon muC-Si layer 105 contg. the silicon atom as the base material and contg. the hydrogen atom and at least one or more atoms selected from the carbon, the oxygen and the nitrogen atoms. Thus, the titled body capable of preventing to transfer the electrostatic charge having an reversed polarity against that of the charge which is charged at the charging step for the body from the substrate 101 to the photoconductive layer 102, and having an improved electrostatic charging capacity is obtd.

22. 发明专利

JPS61105551A Photoconductor 失效
标题翻译：光电子器件
公开(公告)号：JPS61105551A
公开(公告)日：1986-05-23
申请号：JP22599084
申请日：1984-10-29
申请人： Toshiba Corp
发明人： KAGA HIDEKAZU
IPC分类号： G03G5/05 , G03G5/08 , G03G5/14
CPC分类号： G03G5/08
摘要： PURPOSE:To enable optional and dynamic variation of absorption wavelength region by forming a photosensitive layer contg. a binary amorphous material made of C and Ge on a conductive substrate, and changing these contents. CONSTITUTION:The binary amorphous material made of C and Ge without using Si can be dynamically changed in the absorption ends of the absorption wavelength region by changing the content ratio of C to Ge. Since the amorphous Ge carbide can be generally changed by 1-3.5eV as the optical forbidden band width, the whole wavelength region necessary for the photosensitive material from the near 1R rays to the near UV rays can be covered. When the photosensitive body 21 is formed in a CVD device 9, a conductive substrate 11 cleaned of grease with trichloroethylene is placed on a susceptor 13 in a reactor 10, electric discharge is caused in an atm. of argon fed from a gas feed system 17 to deposit a carrier injection barrier layer 22, and then, to form a carrier generating layer 23 and a carrier transfer layer 24, and finally a surface layer 25, in succession.
摘要翻译：目的：通过形成感光层来实现吸收波长区域的可选和动态变化。在导电基板上由C和Ge制成的二元无定形材料，并且改变这些内容。构成：通过改变C与Ge的含量比，可以在不使用Si的C和Ge制成的二元无定形材料在吸收波长区域的吸收端上动态变化。由于非晶Ge碳化物通常可以以1-3.5eV的形式被改变为光学禁带宽度，所以可以覆盖感光材料从近红外线到近紫外线所需的整个波长区域。当感光体21形成在CVD装置9中时，将用三氯乙烯清洗的润滑脂的导电基板11放置在反应器10的基座13上，从而在大气压下产生放电。从气体供给系统17供给氩以沉积载流子注入阻挡层22，然后依次形成载流子生成层23和载流子转移层24，最后形成表面层25。

23. 发明专利

JPS6163850A Electrophotographic sensitive body 失效
标题翻译：电子感应敏感体
公开(公告)号：JPS6163850A
公开(公告)日：1986-04-02
申请号：JP18453484
申请日：1984-09-05
申请人： Toshiba Corp
发明人： KAGA HIDEKAZU
IPC分类号： G03G5/043 , G03G5/08 , G03G5/14
CPC分类号： G03G5/08
摘要： PURPOSE:To obtain an electrophotographic sensitive body which has substantial photosensitivity particularly to long wavelength light such as laser light and obviates the generation of interference fringes by providing coarse boundary faces in parallel or coaxially with the surface into the photoconductive layer on a conductive substrate. CONSTITUTION:For example, Se is first deposited by evaporation on the conductive substrate 11 and the boundary face 13 thereof is roughened by wet or dry process etching or mechanical treatment in the stage of forming the photoconductive layer on said substrate. The photoconductive layer consisting of an Se-Te alloy is then thinly laminated thereon so that the surface 14 of the laminated photoconductive layer 12 reflects the rough surface of the layer 13. The laminated photoconductive layer 22 of which the boundary face between the layers 22-01 and 22-2 is roughened and the surface 24 of the layer 22-2 is also roughened is otherwise formed in the stage of forming a carrier transfer layer 221 and carrier generating layer 22-2 in this order on the base 21 surface. The apparent decrease in the photosensitivity with the coherent light such as laser light in particular owing to the interference between the light incident to the photosensitive bodies 10, 20 and the light reflected from the layer boundary faces 13, 14, 23, 234 is prevented by forming the photoconductive layer in the above mentioned manner. The electrophotographic sensitive body having substantial photosensitivity is thus obtd.
摘要翻译：目的：为了获得特别是对长波长光如激光具有实质的光敏性的电子照相感光体，通过在导电性基体上的光电导层中与表面平行或同轴地设置粗糙的边界面，消除干涉条纹的产生。构成：例如，首先通过蒸镀将Se沉积在导电性基材11上，并且通过在形成所述基材上的光电导层的阶段中的湿法或干法蚀刻或机械处理使其边界面13粗糙化。然后将由Se-Te合金构成的光电导层薄层叠，使得层叠的光电导层12的表面14反射层13的粗糙表面。层22之间的边界面的层叠光电导层22，另外，在基底21表面上依次形成载体转印层221和载体生成层22-2的阶段，使得层22-2的表面24也被粗糙化，并且层22-2的表面24也被粗糙化。特别是由于入射到感光体10,20的光之间的干涉和从层边界面13,14,23,234反射的光的相干光如激光的光敏性的明显降低被通过以上述方式形成光电导层。因此具有实质的光敏性的电子照相感光体。

24. 发明专利

JPS59185344A Photoconductive member 失效
标题翻译：光电会员
公开(公告)号：JPS59185344A
公开(公告)日：1984-10-20
申请号：JP6132583
申请日：1983-04-06
申请人： Toshiba Corp
发明人： YAMAZAKI MUTSUKI , KAGA HIDEKAZU
IPC分类号： G03G5/08 , G03G5/043
CPC分类号： G03G5/0433
摘要： PURPOSE:To provide high potential retentivity and to prevent residual potential from being produced by successively forming two amorphous blocking layers each having a specified thickness and contg. a IIIA or VA group atom in the periodic table between a photoconductive layer of amorphous silicon (a-Si) on a support and the support. CONSTITUTION:When an electrophotographic sensitive body having a photoconductive a-Si layer 4 on an electrically conductive support 1 is manufactured, the 1st blocking layer 2 of a-Si having 0.5-2.5mum thickness and the 2nd blocking layer 3 of a-SiO2 having 0.1-9mum thickness are successively formed on the support 1. The layers 2, 3 contain preferably H or halogen, and it is preferable that a small amount of B or P is incorporated to regulate the specific resistance of the layer 2 to OMEGAcm and that of the layer 3 to >=10 OMEGAcm. A protective layer 5 of a-Si contg. O, H, N or C is then formed on the layer 4. Thus, a sensitive body having high potential by electrostatic charge and no residual potential after exposure is obtd. This sensitive body has high resistance to bias for development and a long life.
摘要翻译：目的：提供高电位的保持性，并通过连续地形成具有特定厚度的两个非晶形阻挡层来防止残留电势的产生。在载体上的非晶硅（a-Si）的光电导层和载体之间的周期表中的IIIA或VA族原子。构成：当制造在导电载体1上具有感光a-Si层4的电子照相感光体时，具有0.5-2.5μm厚度的a-Si的第一阻挡层2和a-SiO 2的第二阻挡层3具有在支撑体1上依次形成0.1-9μm的厚度。层2,3优选含有H或卤素，并且优选加入少量B或P以调节层2的电阻率至<= 10 ＆lt; 9＆gt; OMEGAcm＆gt;层3至> = 10 9欧米加。 a-Si的保护层5 然后在层4上形成O，H，N或C。因此，可以看到通过静电电荷具有高电位并且在曝光后没有残留电位的敏感体。这种敏感的身体对发展的偏见很强，使用寿命长。

25. 发明专利

JPS59131941A Amorphous silicon photosensitive body 失效
标题翻译：非晶硅感光体
公开(公告)号：JPS59131941A
公开(公告)日：1984-07-28
申请号：JP689683
申请日：1983-01-19
申请人： Toshiba Corp
发明人： UENO TAKESHI , YAMAZAKI MUTSUKI , KAGA HIDEKAZU
IPC分类号： G03G5/08
CPC分类号： G03G5/08
摘要： PURPOSE:To provide a single-layered photosensitive layer which has small strain of the layer and can be laminated quickly by incorporating an element which controls the valence electron of the photosensitive layer and an element which varies an optical forbidden band and dielectric constant in the amorphous silicon photosensitive layer. CONSTITUTION:The 1st element which controls the valence electron of an amorphous silicon photosensitive layer is, for example, IIIB group elements and VB group elements, and the 2nd element which varies an optical forbidden band and dielectric constant and decreases the strain of the layer is, for example, C, N, O, etc. A conductive substrate 6 is mounted in a reaction vessel 2, and gaseous raw material having, for example, SiH4, Si2H6, etc., gas contg. the 1st and 2nd elements, and gaseous carrier such as H2 or the like are blown from an electrode 14 and plasma gas is generated by glow discharge between the electrode 14 and the substrate 6 to form the layer having such concn. gradient that the content of the elements is higher near the boundary with the substrate 6 and is smaller as said electrode and substrate separate.
摘要翻译：目的：提供具有小的应变层的单层感光层，并且可以通过结合控制感光层的价电子的元素和在非晶体中改变光学禁带和介电常数的元素来快速层压硅光敏层。构成：控制非晶硅感光层的价电子的第一元素是例如IIIB族元素和VB族元素，并且改变光学禁带和介电常数并降低层的应变的第二元素是例如C，N，O等。导电性基板6安装在反应容器2中，并且具有例如SiH 4，Si 2 H 6等的气体原料，第一和第二元件以及诸如H 2等的气态载体从电极14吹出，并且通过在电极14和基板6之间的辉光放电产生等离子体气体，以形成具有这种结构的层。元件的含量在与衬底6的边界附近更高的梯度，并且随着所述电极和衬底分离而更小。

26. 发明专利

JP2011054032A Ic card and method for manufacturing the same 审中-公开
标题翻译： IC卡及其制造方法
公开(公告)号：JP2011054032A
公开(公告)日：2011-03-17
申请号：JP2009203855
申请日：2009-09-03
申请人： Toshiba Corp , 株式会社東芝
发明人： KAGA HIDEKAZU
IPC分类号： G06K19/077 , B42D15/10 , G06K19/07
摘要： PROBLEM TO BE SOLVED: To prevent an IC card from being broken by external stress by reducing internal stress held by an IC chip. SOLUTION: A multilayer reinforcing member 122 including a metal plate and a ceramic plate 125 is provided on the IC chip 121 of the IC card 10. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过减少由IC芯片保持的内部应力来防止IC卡被外部应力破坏。解决方案：在IC卡10的IC芯片121上设置包括金属板和陶瓷板125的多层加强构件122.版权所有（C）2011，JPO＆INPIT

27. 发明专利

JP2010238154A Ic card 审中-公开
标题翻译： IC卡
公开(公告)号：JP2010238154A
公开(公告)日：2010-10-21
申请号：JP2009088008
申请日：2009-03-31
申请人： Toshiba Corp , 株式会社東芝
发明人： KAGA HIDEKAZU
IPC分类号： G06K19/077 , B42D15/10 , G06K19/07
摘要： PROBLEM TO BE SOLVED: To provide an IC card having high resistance to impact stress. SOLUTION: The IC card includes: a first substrate; an IC chip provided on the first substrate; and a reinforcing plate provided facing the IC chip. The reinforcing plate has a curved shape, and the recessed side of the curved shape of the reinforcing plate faces an IC chip side. The recessed-side surface of the reinforcing plate is formed of an insulator. The reinforcing plate is constituted by laminating a rigid plate and a plates made of the insulator, and the recessed surface side of the curved shape of the reinforcing plate is made of the insulator. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有高抗冲击应力的IC卡。解决方案：IC卡包括：第一基板; 设置在所述第一基板上的IC芯片; 以及与IC芯片相对设置的加强板。加强板具有弯曲形状，并且加强板的弯曲形状的凹入侧面向IC芯片侧。加强板的凹入侧表面由绝缘体形成。加强板由层叠刚性板和由绝缘体构成的板构成，加强板的弯曲形状的凹面侧由绝缘体构成。版权所有（C）2011，JPO＆INPIT

28. 发明专利

JPH0792721A DEVELOPER AND IMAGE FORMING DEVICE USING THE DEVELOPER 失效
公开(公告)号：JPH0792721A
公开(公告)日：1995-04-07
申请号：JP23600693
申请日：1993-09-22
申请人： TOSHIBA CORP
发明人： MURATA HIROSHI , KAGA HIDEKAZU , MIYAMOTO ETSUKO
IPC分类号： G03G9/08 , G03G9/087 , G03G9/09 , G03G15/08 , G03G21/10
摘要： PURPOSE:To improve cleaning ability and the uniformity of charge and to obtain excellent fluidity and charging ability by containing a coloring material and resin and specifying the roundness of particle, particle diameter, the maximum/minimum ratio of the diameter and its content. CONSTITUTION:The developer contains particles which have the mean value of roundness of 0.02 to 0.5, and the ratio of the maximum/minimum diameter being more than 1.1 and a particle diameter being less than 4mum at the ratio of 3 to 30% in weight, and contains a coloring material and resin, and moreover, the particle which is 0.1 to 0.5 in the mean value of roundness and more than 4mum in the diameter of particle. The roundness (p) in shown by a formula (p)=(r1+r2+r3+...)/RN. In the formula, (r) designates the radius of curvature at the corner of particle, and R does the radius of the maximum inscribed circle, and N does the number of corners. The average particle diameter of a developer is desirably to be smaller than 9mum. The particle being less than 4mum in the particle diameter is desirably produced by aggregating and associating polymerized fine particles containing the resin. Thus, in the polymerized developer which is made smaller in diameter and has an undefined form, insufficient cleaning caused by slippage from a cleaning blade and the chattering of the blade can be prevented.

29. 发明专利

JPH06191070A THERMAL TRANSFER MACHINE 失效
公开(公告)号：JPH06191070A
公开(公告)日：1994-07-12
申请号：JP34405092
申请日：1992-12-24
申请人： TOSHIBA CORP
发明人： NAKAMURA YUKA , KAGA HIDEKAZU
IPC分类号： B41J3/60 , B41J2/325
摘要： PURPOSE:To provide a thermal transfer machine which can prevent a base material from being warped by thermal deformation and can carry out excellent thermal transfer. CONSTITUTION:A thermal transfer machine 1 is provide wherein a thermal transfer film 23 having a transfer layer 23b is superimposed on a base material 5 to heat the thermal transfer film 23 from both sides and the transfer layer 23b is thermally transferred to the base material 5 thereby. When the width of the nip of a heat roller 21 positioned on the base material 5 side in thermal transfer of the transfer layer is the same as that of a heating nip of a heat roller 22, the surface temperature of the heat roller 21 on the base material 5 and the surface temperature of the heat roller 22 on the thermal transfer film 23 side are almost the same, but the surface temperature of the heat roller 22 on the base material 5 side is higher. Then, the difference in heating temperature is decreased and the heating temperature on the base material 5 side is slightly higher than that on the thermal transfer film 23 side of a large thermal contraction. Thereby, the base material 5 warps little.

30. 发明专利

JPH05224449A ELECTROPHOTOGRAPHIC SENSITIVE BODY 失效
公开(公告)号：JPH05224449A
公开(公告)日：1993-09-03
申请号：JP2667292
申请日：1992-02-13
申请人： TOSHIBA CORP
发明人： TAKAHASHI MASASHI , KAGA HIDEKAZU , NAKAMURA YUKA
IPC分类号： G03G5/14
摘要： PURPOSE:To provide an electrophotographic sensitive body which causes no defect in picture images. CONSTITUTION:This electrophotographic sensitive body has a supporting body at least the surface of which has conductivity, an insulating oxide film formed on this conductive surface of the supporting body, and a photosensitive layer formed on the insulating oxide film. The film thickness (d) and the average film thickness (dm) of the oxide film on the surface of the supporting body satisfy the relation of 0.8 (dm)

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