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21. 发明专利

JP2003272624A Carbon material and its manufacturing method as well as battery 有权
标题翻译：碳材料及其制造方法作为电池
公开(公告)号：JP2003272624A
公开(公告)日：2003-09-26
申请号：JP2002073218
申请日：2002-03-15
申请人： National Institute For Materials Science , Tdk Corp , Tdk株式会社 , 独立行政法人物質・材料研究機構
发明人： KURIHARA MASAHITO , MARUYAMA SATORU , ISHIGAKI TAKAMASA
IPC分类号： C01B31/02 , C01B31/04 , H01M4/587 , H01M10/05 , H01M10/0525 , H01M10/0569 , H01M4/58 , H01M4/02 , H01M10/40
CPC分类号： Y02P70/54
摘要： PROBLEM TO BE SOLVED: To realize such effects as improvement of capacity, lowering of irreversible capacity ratio at an initial charging, improvement of thermal stability with a good repeatability, for a battery using a carbon material as an electrode.
SOLUTION: With the carbon material made of carbon particles used as a constituent element of an electrode, when a peak strength derived from a graphite structure existing in the vicinity of 1,580 cm
-1 is I
1580 , a peak strength derived from distortion of the graphite structure existing in the vicinity of 1,350 cm
-1 is I
1350 , and I
1580 /I
1350 is a degree of graphitization, the degree of graphitization GA is 0.5≤GA≤10, and the ratio GS/GC of a surface graphitization degree GS in an area within 1/8 of a particle minor axis from the carbon particle surface to a central graphitization degree GC in an area within 1/8 of the particle minor axis from the carbon particle center is: GS/GC
摘要翻译：解决问题：为了实现容量的提高，初始充电时的不可逆容量比的降低，具有良好重复性的热稳定性的提高，使用碳材料作为电极的效果。解决方案：使用碳粒子作为电极的构成元素的碳材料，当存在于1580cm -1附近的石墨结构的峰值强度为I < SB> 1580 ，存在于1,350cm -1附近的石墨结构的变形引起的峰强度为I SB> 1350 ，I 1580 / I 1350 是石墨化度，石墨化度GA为0.5≤GA≤10，表面石墨化度GS的比值GS / GC在1以内从碳粒子表面到颗粒短轴的粒子短轴的/ 8从碳粒子中心的粒子短轴的1/8以内的区域的中心石墨化度GC为：GS / GC <1。版权所有（C）2003，JPO

22. 发明专利

JP2000223121A CARBON MATERIAL AND ITS MANUFACTURE 失效
公开(公告)号：JP2000223121A
公开(公告)日：2000-08-11
申请号：JP1890699
申请日：1999-01-27
申请人： TDK CORP , NAT INST RES INORGANIC MAT
发明人： KURIHARA MASAHITO , MARUYAMA SATORU , ISHIGAKI TAKAMASA , SATO YOICHIRO
IPC分类号： C01B31/02 , H01G11/08 , H01G11/22 , H01G11/24 , H01G11/26 , H01G11/32 , H01G11/38 , H01G11/44 , H01G11/84 , H01G11/86 , H01M4/02 , H01M4/36 , H01M4/587 , H01M4/58 , H01G9/058
摘要： PROBLEM TO BE SOLVED: To provide a carbon material having a large specific surface area and a large mean grain diameter, allowing improvement of a function, allowing suppression of degradation of a characteristic accompanying the increase of the specific surface area, and advantageous in manufacturing an electrode, and to provide a manufacturing method therefor. SOLUTION: This carbon material for an electrode used together with a binder has a specific surface area of 0.1-900 m2/g and a mean grain diameter of 1-50 μm, while a graphitization degree of the carbon material in a range from a grain surface to the length of 1/4 or less of a grain diameter is higher than in a range from the grain center to the length of 1/4 or less of the grain diameter. The carbon material is formed by thermal plasma-treating raw material powder at 3,000-15,000 deg.C under a pressure of 10-760 Torr for 0.001-10 sec in a reducing atmosphere or a reacting atmosphere.

23. 发明专利

JPH11306858A POLYMER SOLID ELECTROLYTE, AND LITHIUM SECONDARY BATTERY AND ELECTRICALLY DOUBLE LAYER CAPACITOR USING THE SAME 失效
公开(公告)号：JPH11306858A
公开(公告)日：1999-11-05
申请号：JP12420098
申请日：1998-04-17
申请人： TDK CORP
发明人： ONO HIROYUKI , ITO KAORI , KURIHARA MASAHITO , MARUYAMA SATORU , FURUBAYASHI MAKOTO , OE KAZUHIDE
IPC分类号： H01G9/025 , H01B1/12 , H01G11/14 , H01G11/52 , H01G11/54 , H01G11/56 , H01M10/05 , H01M10/052 , H01M10/0565 , H01M10/40
摘要： PROBLEM TO BE SOLVED: To provide a solid electrolyte of high reliability and safety and satisfac tory conductivity, without changing the process of a gel electrolyte by having an imidazolium salt and a lithium salt included in the matrix of a fluorine polymer compound. SOLUTION: An imidazolium salt represented by the formula and a lithium salt are included in the matrix of a fluorine polymer compound. In the formula, R1 , R2 and R3 each represents an alkyl group or H, A- represents one of (RSO2 )3 C , (RSO2 )2 N , RSO3 , BF4 , PF6 , ASF6 , and ClO4 , and R represents a 1-3C perfluoroalkyl group. The lithium salt consists of at least one of LiC (RSO3 )3 , LiN(RSO2 )2 , LiRSO3 (R is a 1-3C perfluoroalkyl group), LiBF4 , LiPF6 , LiASF6 and LiClO4 . As the fluorine polymer compound, a homopolymer or copolymer of vinylidene fluoride is preferably used. The mixing ratio of imidazolium salt to lithium salt is preferably set to 10:1 to 1:2.

24. 发明专利

JPH11144707A SHEET ELECTRODE/ELECTROLYTE STRUCTURAL BODY 失效
公开(公告)号：JPH11144707A
公开(公告)日：1999-05-28
申请号：JP31660297
申请日：1997-11-04
申请人： TDK CORP
发明人： KURIHARA MASAHITO , MARUYAMA SATORU , SUZUKI TAKERU
IPC分类号： H01M4/02 , H01G11/06 , H01G11/22 , H01G11/24 , H01G11/30 , H01G11/32 , H01G11/46 , H01G11/52 , H01G11/54 , H01G11/56 , H01M6/18 , H01M10/05 , H01M10/0565 , H01M10/058 , H01G9/038 , H01G9/058 , H01M10/40
摘要： PROBLEM TO BE SOLVED: To attain a large current discharge so as to improve a discharge rate characteristic, when used as a secondary battery by improving the ion conductivity inside an electrode. SOLUTION: This is a sheet electrode/electrolyte structural body, in which a gel electrolyte 3 is interposed between a positive electrode 1 and a negative electrode 2. An electrolyte storage layer 4 is provided around the positive electrode 1 and the negative electrode 2. The electrolyte storage layer 4 is gelled by impregnating an electrolyte in a high-polymer matrix and is joined to each boundary of the positive electrode 1 and the negative electrode 2 which is opposite to the gel electrolyte 3 side.

25. 发明专利

JPH1092432A MANUFACTURE OF ELECTRODE MATERIAL 失效
公开(公告)号：JPH1092432A
公开(公告)日：1998-04-10
申请号：JP18754597
申请日：1997-06-27
申请人： TDK CORP
发明人： MARUYAMA SATORU , KURIHARA MASAHITO , OE KAZUHIDE
IPC分类号： C01B31/02 , H01G11/08 , H01G11/22 , H01G11/32 , H01G11/38 , H01G11/42 , H01G11/44 , H01G11/84 , H01G11/86 , H01M4/587 , H01M4/62 , H01M10/05 , H01M4/58 , H01G9/058 , H01M4/02 , H01M4/04 , H01M10/40
摘要： PROBLEM TO BE SOLVED: To provide electrode material in which discharge capacity can be heightened when the same is used for a lithium battery, and electrostatic capacity can be enlarged when the same is used for an electric double layer capacitor by applying heat plasma treatment to a carbon material at a predetermined temperature or more in a reducing atmosphere or in a reacting atmosphere. SOLUTION: Carbon material powder or carbon raw material powder and carrier gas are supplied to heat plasma formed inside a high frequency heat plasma generation device 10 via powder supplying water cooling probe 14. Plasma gas Gp and sheath gas Gs are introduced inside the generating device 10. This way, heat plasma treatment is applied to the carbon material power or the carbon raw material power at a temperature of 3000 deg.C or more in a reducing atmosphere or in a reacting atmosphere. Thereby, electrode material in which discharge capacity is increased and a superior characteristic is exhibited against over discharge when the same is used for the negative electrode material of a lithium secondary battery, and electrostatic capacity can be enlarged when the same is used for the polarizable electrode material of an electric double layer capacitor is obtained.

26. 发明专利

JP2012216647A Semiconductor layer manufacturing method and solar cell manufacturing method 有权
标题翻译：半导体层制造方法和太阳能电池制造方法
公开(公告)号：JP2012216647A
公开(公告)日：2012-11-08
申请号：JP2011080269
申请日：2011-03-31
申请人： Tdk Corp , Tdk株式会社
发明人： KURIHARA MASAHITO , PHILLIP DALE , MARC STEICHEN
IPC分类号： H01L31/04
CPC分类号： Y02E10/541 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor layer manufacturing method and the like which can sufficiently increase photocurrent density.SOLUTION: A semiconductor layer manufacturing method comprises a laminate formation process of forming, on a substrate 6, a laminate 8p including a Cu layer 8a, an In layer 8b and a Ga layer 8c, and a semiconductor layer formation step of making the laminate 8p be a Cu(In,Ga)(Se,S)layer. In the laminate formation process, the Ga layer 8c is formed by electrolytic deposition in an ionic liquid in which a gallium salt is dissolved. Here, the following formulas are satisfied: 0
摘要翻译：要解决的问题：提供可以充分提高光电流密度的半导体层制造方法等。解决方案：半导体层制造方法包括在基板6上形成包括Cu层8a，In层8b和Ga层8c的层叠体8p的层叠体形成工序，以及半导体层形成工序层叠体8p为Cu（In x ，Ga 1-x ）（Se y ，S 1-y ） j 层。在层叠体形成工序中，通过电解沉积在其中溶解有镓盐的离子液体中形成Ga层8c。这里，满足以下公式：0

27. 发明专利

JP2011171653A Method of forming compound semiconductor buffer layer and method of manufacturing compound semiconductor thin-film solar cell 有权
标题翻译：形成化合物半导体缓冲层的方法和制备化合物半导体薄膜太阳能电池的方法
公开(公告)号：JP2011171653A
公开(公告)日：2011-09-01
申请号：JP2010036156
申请日：2010-02-22
申请人： Tdk Corp , Tdk株式会社
发明人： KURIHARA MASAHITO
IPC分类号： H01L31/04
CPC分类号： Y02E10/541 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a method of forrming a compound semiconductor buffer layer for forming a uniform CdS buffer layer. SOLUTION: The method of forming a compound semiconductor buffer layer includes: a process of obtaining a gel sheet A by impregnating a highly hygroscopic polymer sheet with a liquid mixture including a cadmium salt water solution and an ammonium salt water solution including an anion common to a cadmium salt; a process of obtaining a gel sheet B by impregnating the highly hygroscopic polymer sheet with a liquid mixture including an aqueous solution of thiourea and ammonia water; a process of heating a compound semiconductor light absorption layer comprising a compound semiconductor including group Ib, IIIb, and VIb elements or Cu 2 ZnSnS 4 to not lower than 30°C, adhering the gel sheet A to the light absorption layer, and then overlapping the gel sheet B; a process of separating the gel sheets A, B; and a process of forming a compound semiconductor buffer layer formed of cadmium sulfide on the light absorption layer by cleaning and drying the light absorption layer. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：待解决的问题：提供一种锻造用于形成均匀的CdS缓冲层的化合物半导体缓冲层的方法。解决方案：形成化合物半导体缓冲层的方法包括：通过用包含镉盐水溶液和包含阴离子的铵盐水溶液的液体混合物浸渍高吸湿性聚合物片材来获得凝胶片材A的方法常见于镉盐; 通过用包含硫脲和氨水的水溶液的液体混合物浸渍高吸湿性聚合物片材来获得凝胶片材B的方法; 将包含Ib族，IIIb族和VIb族元素的化合物半导体的化合物半导体光吸收层加热至不低于30℃的方法，或者将CuSi2SbSnSnS 4 将凝胶片A粘附到光吸收层，然后与凝胶片B重叠; 分离凝胶片A，B的工序; 以及通过清洗和干燥光吸收层，在光吸收层上形成由硫化镉形成的化合物半导体缓冲层的工艺。版权所有（C）2011，JPO＆INPIT

28. 发明专利

JP2011171652A Method of forming compound semiconductor light absorption layer and method of manufacturing compound semiconductor thin-film solar cell 有权
标题翻译：形成化合物半导体光吸收层的方法和制备化合物半导体薄膜太阳能电池的方法
公开(公告)号：JP2011171652A
公开(公告)日：2011-09-01
申请号：JP2010036152
申请日：2010-02-22
申请人： Tdk Corp , Tdk株式会社
发明人： KURIHARA MASAHITO
IPC分类号： H01L31/04
CPC分类号： Y02E10/541 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a compound semiconductor light absorption layer for performing etching using potassium cyanide improved in working efficiency and obtaining a uniformly etched light absorption layer. SOLUTION: The method of forming a compound semiconductor light absorption layer includes: a process of obtaining a gel sheet by impregnating a highly hygroscopic polymer sheet with a potassium cyanide solution; a process of adhering the gel sheet to a layer comprising a compound semiconductor including a group Ib element, a group IIIb element, and a group VIb element, or Cu 2 ZnSnS 4 for etching the layer; a process of separating the gel sheet from the layer; and a process of obtaining an etched compound semiconductor light absorption layer by cleaning and drying the layer. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成化合物半导体光吸收层的方法，其用于使用氰化钾进行蚀刻以提高工作效率并获得均匀蚀刻的光吸收层。解决方案：形成化合物半导体光吸收层的方法包括：通过用氰化钾溶液浸渍高吸湿性聚合物片而获得凝胶片的方法; 将凝胶片粘附到包含Ib族元素，IIIb族元素和VIb族元素的化合物半导体的层或Cu ZnSnS SB“4 用于蚀刻该层; 从该层分离凝胶片的方法; 以及通过清洗和干燥该层来获得蚀刻的化合物半导体光吸收层的工艺。版权所有（C）2011，JPO＆INPIT

29. 发明专利

JP2006260847A Carbon material for electrode and its manufacturing method, electrode and its manufacturing method, and electrochemical device and its manufacturing method 有权
标题翻译：电极用碳材料及其制造方法，电极及其制造方法及电化学装置及其制造方法
公开(公告)号：JP2006260847A
公开(公告)日：2006-09-28
申请号：JP2005073806
申请日：2005-03-15
申请人： National Institute For Materials Science , Tdk Corp , Tdk株式会社 , 独立行政法人物質・材料研究機構
发明人： KURIHARA MASAHITO , MARUYAMA SATORU , ISHIGAKI TAKAMASA , RI TSUGUMITSU
IPC分类号： C01B31/04 , H01G11/06 , H01G11/22 , H01G11/24 , H01G11/30 , H01G11/32 , H01G11/34 , H01G11/38 , H01G11/58 , H01G11/86 , H01M4/02 , H01M4/04 , H01M4/1393 , H01M4/587 , H01M10/05 , H01M10/0525
CPC分类号： Y02E60/13
摘要： PROBLEM TO BE SOLVED: To provide a carbon material for an electrode capable of reducing an irreversible capacity, increasing a reversible capacity, improving cycle characteristics and the like, an electrode, a battery and their manufacturing methods, specially in a lithium ion secondary battery. SOLUTION: The carbon material for an electrode is formed through plasma treatment process conducting high frequency thermal plasma treatment to a raw material composition of carbon or an organic material in a plasma gas atmosphere containing a boron-containing compound so that a region near the surface of the carbon material is made into a turbulent layer structure in the vicinity of the surface of the carbon material and also cleaning and surface-reforming are attained. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供能够降低不可逆容量，增加可逆容量，改善循环特性等的电极的碳材料，特别是在锂离子中的电极，电池及其制造方法二次电池解决方案：通过在包含含硼化合物的等离子体气体气氛中对碳或有机材料的原料组成进行高频热等离子体处理的等离子体处理工艺形成电极用碳材料，使得接近碳材料的表面在碳材料的表面附近被制成湍流层结构，并且也可以进行清洁和表面重整。版权所有（C）2006，JPO＆NCIPI

30. 发明专利

JP2006186227A ELECTROCHEMICAL DEVICE 审中-公开
公开(公告)号：JP2006186227A
公开(公告)日：2006-07-13
申请号：JP2004380361
申请日：2004-12-28
申请人： TDK CORP
发明人： KURIHARA MASAHITO , KATAGIRI YUTAKA , OKA HITOSHI , MARUYAMA SATORU
IPC分类号： H01G9/00 , H01G9/08 , H01G11/22 , H01G11/32 , H01G11/38 , H01G11/54 , H01G11/60 , H01G11/62 , H01G11/64 , H01G11/78 , H01G11/84
摘要： PROBLEM TO BE SOLVED: To sufficiently improve a characteristic of an electrochemical device using nonaqueous electrolyte. SOLUTION: The electrochemical device 100 is provided with a laminated body 20 having a separator 18 and a pair of electrodes 10 and 10 arranged across the separator 18, a coating bag 50 storing the laminated body 20 and nonaqueous electrolyte impregnated in the laminated body 20. Nonaqueous electrolyte comprises organic solvent, electrolyte expressed with Q + X - and F - ions. F - ion concentration in nonaqueous electrolyte is 3 to 180 mass ppm. Q + is quaternary ammonium cation or quaternary phosphonium cation. X - is anion selected from a group formed of BF 4 - , PF 6 - , AsF 6 - , SbF 6 - , N(RfSO 3 ) 2 - , C(RfSO 3 ) 3 - and RfSO 3 - . Rf is a fluoro alkyl group whose number of carbons is 1 to 12. COPYRIGHT: (C)2006,JPO&NCIPI

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