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1. 发明专利

JP2002151063A ELECTRODE REACTION CHARACTERISTIC MEASUREMENT EQUIPMENT AND METHOD 失效
公开(公告)号：JP2002151063A
公开(公告)日：2002-05-24
申请号：JP2000342604
申请日：2000-11-09
申请人： NAT INST RES INORGANIC MAT , HITACHI HIGH TECH CORP
发明人： WATANABE JUN , YANASE IKUO , TAKADA KAZUNORI , OOTAKI TAKUMA
IPC分类号： H01M4/36
摘要： PROBLEM TO BE SOLVED: To provide electrode reaction characteristic measurement equipment, which can evaluate in high efficiency diversified and a large number of electrode materials by easy control. SOLUTION: In a recessed part 2 of a substrate 1, in which two or more recessed parts 2 containing a sample 3 under evaluation, and consists of material, which has electronic conductivity and does not show ion conductivity, electrolyte dispenser 6, which pours an electrolyte 7, and measurement equipment 16, which has an electrode 17 inserted into each of the recessed parts and measures voltage-current characteristic between the substrate 1 and the electrode 17.

2. 发明专利

JP2001198208A CALCIUM PHOSPHATE TYPE BIOCOMPATIBLE CERAMIC SINTERED BODY AND METHOD OF MANUFACTURING THE SAME 失效
公开(公告)号：JP2001198208A
公开(公告)日：2001-07-24
申请号：JP2000010943
申请日：2000-01-19
申请人： NAT INST RES INORGANIC MAT , TOSHIBA CERAMICS CO , TOSHIBA DENKO KK
发明人： TANAKA JUNZO , KIKUCHI MASANORI , IKOMA TOSHIYUKI , HOJO AKIMICHI , IMURA KOICHI , UEMOTO HIDEO , YAMAZAKI HIROSHI , KINOSHITA MASAMI , MINOWA NOBUAKI
IPC分类号： A61C13/08 , A61C13/00 , A61K6/838 , A61L27/00 , A61L31/00 , A61K6/033
摘要： PROBLEM TO BE SOLVED: To improve the initial adhesion cells and tissues. SOLUTION: A calcium phosphate biocompatible sintered body is constituted by modifying the surface of a sintered object with metal ions (e.g.; zinc ions) to arrange a polymer (e.g.; collagen) accelerating the regenerative growth of a bone on the surface of the sintered body.

3. 发明专利

JP2001074894A MATERIAL FOR SPECTRAL ELEMENT THAT DISPERSES SOFT X RAYS 失效
公开(公告)号：JP2001074894A
公开(公告)日：2001-03-23
申请号：JP24971799
申请日：1999-09-03
申请人： NAT INST RES INORGANIC MAT
发明人： TANAKA TAKAO
IPC分类号： G21K1/06
摘要： PROBLEM TO BE SOLVED: To provide a material for a spectral element which can disperse soft X rays in a practically available range, 0.5 keV or more, by increasing the reflection intensity of diffraction with 2d value that is longer than 400 diffraction and improve the serviceability of the material for the spectral element for dispersing YB66 soft X rays that disperses soft X rays between 1 keV and 2 kaV inclusive by heightening the reflectivity of the 400 diffraction. SOLUTION: One or not less than two kinds of transition metal elements such as Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb and Mo is added to YBn (provided that n is more than 52 and less than 72) that has a structure of YB66 to change the layout of atoms in a crystal grating and position occupation rate whereby spectral properties of soft X rays are improved by increasing the X-ray reflectivity of 200 diffraction, and this material permits the dispersion of soft X rays of lower energy, 0.5 keV or more.

4. 发明专利

JP2001059983A LITHIUM NIOBATE SINGLE CRYSTAL 失效
公开(公告)号：JP2001059983A
公开(公告)日：2001-03-06
申请号：JP2000213240
申请日：2000-07-13
申请人： NAT INST RES INORGANIC MAT , LOS ALAMOS NATL LAB
发明人： KITAMURA KENJI , FURUKAWA YASUNORI , BENKATORAMAN GOPARAN , TERRENCE E MICHEL
IPC分类号： G02F1/37 , C30B29/30
摘要： PROBLEM TO BE SOLVED: To obtain characteristics rich in repeatability and reliability when polarization is reversed by making applied voltage necessary for reversing ferroelectric polarization into a specified value or lower and bringing the thick ness into a specified range. SOLUTION: This lithium niobate single crystal has controlled nonstoichiometric defect density and usable as a optical functional element for converting wavelengths of a laser from the visible to the near-infrared regions. The voltage to be applied to this crystal for reversing the ferroelectric polarization of this crystal can be made to 10 kV/mm or lower and its thickness is 0.5-2.0 mm (excluding 0.5 mm). The molar fraction of Li2O/(Nb2O3+Li2O) is 0.50-0.52 and this crystal has stoichiometric composition. The voltage to be applied to this crystal for reversing the polarization can be made smaller than that applied to conventional lithium niobate single crystals which contain a large density of defects and has congruent melting composition. Since the defect density is extremely small, pinching does not occur and the characteristics rich in repeatability and reliability can be further obtained when the polarization is reversed.

5. 发明专利

JP2001039772A HIGH STRENGTH SILICON CARBIDE SINTERED BODY AND ITS PRODUCTION 失效
公开(公告)号：JP2001039772A
公开(公告)日：2001-02-13
申请号：JP21036699
申请日：1999-07-26
申请人： AGENCY IND SCIENCE TECHN , NAT INST RES INORGANIC MAT
发明人： SHU YU , TORIYAMA MOTOHIRO , HIRAO KIYOSHI , TANAKA HIDEHIKO
IPC分类号： C04B35/565 , C04B35/573 , C04B35/64
摘要： PROBLEM TO BE SOLVED: To produce a high strength silicon carbide sintered body which is obtained by adding a non-oxide sintering aid capable of accelerating the densification even at a low temp. to be sintered while lowering the sintering temp. of the silicon carbide sintered body and to provide a method for producing the same in a short time by a pulse electric current sintering method. SOLUTION: The high strength silicon carbide sintered body is obtained by adding 1.5 to 10.0 wt.% of a non-oxide sintering aid, in which aluminum carbide and boron carbide are mixed in such a ratio that the most preferable molar ratio of the former to the latter is 2:1, to a fine silicon carbide powder produced by a CVD method or from an organic raw material and having an average particle size of about several tens of nanometer and then sintering the obtained mixture by applying electric pulses. The method for producing the high strength silicon carbide sintered body comprises adding 1.5 to 10.0 wt.% of the non-oxide sintering aid to the fine silicon carbide powder produced by a CVD method or from an organic raw material and having the average particle size of about several tens of nanometer and then sintering the obtained mixture by applying electric pulses at 1,500 to 1,750 deg.C.

6. 发明专利

JP2001007385A ULTRAVIOLET RAY EMITTING DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2001007385A
公开(公告)日：2001-01-12
申请号：JP17472399
申请日：1999-06-21
申请人： JAPAN SCIENCE & TECH CORP , NAT INST RES INORGANIC MAT
发明人： ANDO HISAHIRO , SATO YOICHIRO , GAMO MIKA
IPC分类号： C30B29/04 , H01L21/205 , H01L33/34 , H01L33/40 , H01S5/00 , H01S5/32 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide an ultraviolet ray emitting device capable of emitting ultraviolet rays from a semiconductor p-n junction, and a manufacturing method thereof. SOLUTION: An n-type diamond semiconductor crystal layer 4, doped with S which are to become donor atoms, is grown, e.g. by a plasma CVD on a p-type diamond semiconductor crystal 2 made of a B-doped high-pressure synthesized diamond or natural (IIb) type diamond, thereby forming a p-n junction 6. A forward voltage is applied from the p-n junction 6 to emit ultraviolet rays.

7. 发明专利

JP2001007348A DIAMOND SEMICONDUCTOR DEVICE AND MANUFACTURE OF THE SAME 失效
公开(公告)号：JP2001007348A
公开(公告)日：2001-01-12
申请号：JP17472299
申请日：1999-06-21
申请人： JAPAN SCIENCE & TECH CORP , NAT INST RES INORGANIC MAT
发明人： ANDO HISAHIRO , GAMO MIKA , SAKAGUCHI ISAO , SATO YOICHIRO , NOZU EIJI
IPC分类号： C30B29/04 , H01L21/04 , H01L21/205 , H01L21/337 , H01L29/16 , H01L29/808 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To provide a diamond semiconductor device with a P-N junction which is capable of rectifying a current even at a high temperature. SOLUTION: An N-type diamond semiconductor crystal layer 4, doped with sulfur which serves as donor atoms, is formed through a CVD method on a P-type diamond semiconductor crystal 2 which is formed of high-pressure synthetic diamond doped with boron or natural IIb diamond to form a P-N junction 6. This P-N junction 6 is capable of carrying out an satisfactory rectifying action at a high temperature of 500 deg.C.

8. 发明专利

JP2000302567A CALCIUM PHOSPHATE POROUS SINTERED COMPACT AND ITS PRODUCTION 失效
公开(公告)号：JP2000302567A
公开(公告)日：2000-10-31
申请号：JP10557999
申请日：1999-04-13
申请人： TOSHIBA CERAMICS CO , NAT INST RES INORGANIC MAT , TOSHIBA DENKO KK
发明人： IMURA KOICHI , UEMOTO HIDEO , HOJO AKIMICHI , TANAKA JUNZO , KIKUCHI MASANORI , SUETSUGU YASUSHI , YAMAZAKI HIROSHI , KINOSHITA MASAMI , MINOWA NOBUAKI
IPC分类号： A61L27/00 , A61K6/838 , A61L27/12 , A61L27/56 , C01B25/32 , C04B35/447 , C04B38/06 , C04B38/10 , A61K6/033
摘要： PROBLEM TO BE SOLVED: To improve mechanical strength and bio-affinity by specifying porosity, diameter of the communicating part between pores and three-point bending strength of a calcium phosphate sintere compact having a porous structure. SOLUTION: This calucium phosphate porous sintered body, having porous characteristics that the porosity is in the range of 55 to 90%, spherical pores are communicated with one another over the whole porous body, an average diameter of communicating parts between pores is not less than 50 μm, pore diameters are not less than 150 μm and the three-point bending strength is >=5 MPa, is obtained by dispersing or dissolving calcium phosphate powder and a curable organic material capable of being cured by cross-linking polymerization into a solvent to obtain a slurry, adding a foaming agent to the slurry, foaming the slurry by stirring or introducing gas into the slurry until the volume of the slurry becomes a prescribed volume to obtain a slurry in the foamed state, further adding a cross-linking agent and/or a cross-linking initiator to the resultant slurry, after mixing, pouring the slurry into a mold, subjecting the slurry to cross-linking polymerization and curing to obtain a formed body, drying the obtained formed body and finally sintering the dried formed body.

9. 发明专利

JP2000129422A METHOD FOR SYNTHESIZING HARD TURBOSTRATIC BN THIN LAYER AND DEVICE THEREFOR 失效
公开(公告)号：JP2000129422A
公开(公告)日：2000-05-09
申请号：JP31540098
申请日：1998-10-19
申请人： NAT INST RES INORGANIC MAT
发明人： TANAKA KOJI
IPC分类号： C23C14/06 , C23C14/22
摘要： PROBLEM TO BE SOLVED: To synthesize a hard BN thin film having excellent characteristics as those of a coating material to be used at high temp. and further capable of applying coating on the surface of a thermaly weak material. SOLUTION: In a method in which, simultaneously with the evaporation of thermal boron(B), ions by an ion source and neutral, accelerated, active nitrogen grains (N2*) are applied toward a substrate for film formation to synthesize a boron nitride(BN) thin film on the substrate, a substrate holder 8 is provided with a refrigerant flowing passage for subjecting the substrate to forced cooling to a low temp. region lower than room temp., and, in the process of film formation, the substrate is subjected to forced cooling to hold the substrate temp. to a low temp., by which the grain growth of hexagonal crystal BN (h-BN) is suppressed and the development of the layer is suppressed to form into more amorphous BN, and, moreover, by controlling the ratio of the granular number between N2* and the evaporated B, i.e., (N2*/B), the high purity turbostratic BN (t-BN) thin film of high quality which does not contain unreacted B is synthesized.

10. 发明专利

JP2000109306A PRODUCTION OF BORON NITRIDE NANOTUBE 失效
公开(公告)号：JP2000109306A
公开(公告)日：2000-04-18
申请号：JP29298498
申请日：1998-09-30
申请人： NAT INST RES INORGANIC MAT
发明人： BANDO YOSHIO , WEICHIN HAN , SATO TADAO , KURASHIMA KEIJI
IPC分类号： C01B21/064
摘要： PROBLEM TO BE SOLVED: To mass-produce boron nitride nanotubes. SOLUTION: Carbon nanotubes are allowed to react with boron oxide and nitrogen at a high temperature of 1,200-2,100 deg.C to form the objective boron nitride nanotubes. The boron oxide is B2O3, H3BO3 or a material forming boron oxide at the high temperature and the gas is preferably nitrogen or ammonia.

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