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21. 发明专利

JPH03110844A DIGITAL ETCHING METHOD 失效
公开(公告)号：JPH03110844A
公开(公告)日：1991-05-10
申请号：JP24972589
申请日：1989-09-26
申请人： RIKAGAKU KENKYUSHO
发明人： MEGURO TAKASHI , HAMAGAKI MANABU , HARA TAMIO , AOYANAGI KATSUNOBU
IPC分类号： C23F4/00 , G11B9/00 , G11B9/14 , H01L21/302
摘要： PURPOSE:To make it possible to obtain etching characteristics, which are stable and have a controllability in an atomic layer level, by a method wherein before a beam is projected, reactive gas is evacuated and the reactive gas which does not contribute to adsorption to the surfaces of solid materials is evacuated from the interior of a container. CONSTITUTION:This digital etching method is a method wherein reactive gas 2 is adsorbed to the surfaces of solid materials 1 in a container and after this gas is evacuated, an etching is controlled at an atomic layer level by repeating a process for projecting a charged particle beam or an optical beam 3. That is, by the adsorption of the gas 2 to the surfaces of the materials 1, the coupling of adsorbed solid atoms 1' with the materials 1 is weakened, then, the atoms 1' only weakened their coupling are etched through the materials 1 with the charged particle beam or the optical beam 3 which is projected. Thereby, stable etching characteristics which do not depend on the amount of the gas 2, which is fed, and the amount of the beam, which is projected, can be realized having a controllability at the atomic layer level.

22. 发明专利

JPH01176633A ELECTRON BEAM-EXCITING ION SOURCE 失效
公开(公告)号：JPH01176633A
公开(公告)日：1989-07-13
申请号：JP33216887
申请日：1987-12-30
申请人： TOKYO ELECTRON LTD , RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU , MATSUDO MASAHIKO , KOSHIISHI AKIRA , KAWAMURA GOHEI , TAKAYAMA NAOKI
IPC分类号： H01J27/20 , H01J37/08
摘要： PURPOSE:To make it possible to form uniform plasma of a large diameter in an ion generating area by making an ion beam produced with an ion generating device a diffused flow. CONSTITUTION:Outside a closed container 1 is disposed an annularly formed hollow-core coil 8. Between an orifice 4 of the closed container 1 and an anode 5 is disposed a layer consisting of a material of a high permeability, for example an iron layer 9, so as to surround the circumference of the container 1. The magnetic field formed by energizing the hollow-core coil 8 in the closed container 1 runs as shown with dotted line in the drawing to expand in the direction of the iron layer 9 inside the iron layer 9, namely in the direction of the rim or the closed container 1, and runs approximately linearly in other parts. Since electrons are deflected in this electron generating area to expand in the direction of the rim of the electron generating area and uniformly enter an ion generating area where ions are generated, it is possible to form uniform plasma of a large diameter in the ion generating area.

23. 发明专利

JPS63221540A ELECTRON BEAM EXCITING ION SOURCE 失效
公开(公告)号：JPS63221540A
公开(公告)日：1988-09-14
申请号：JP5339187
申请日：1987-03-09
申请人： TOKYO ELECTRON LTD , RIKAGAKU KENKYUSHO
发明人： TAKAYAMA NAOKI , KAWAMURA GOHEI , HARA TAMIO , HAMAGAKI MANABU , NANBA SUSUMU , AOYANAGI KATSUNOBU
IPC分类号： H05H7/08 , H01J27/20
摘要： PURPOSE:To obtain an electron beam exciting ion source with the large current density, long life, and low power consumption quantity by making the diameter of through holes 0.65mm or less when electrons are extracted from a plasma generation region by the voltage of an electrode with many through holes. CONSTITUTION:Discharge gas is guided into a chamber 1 through the through hole 4 of a cathode electrode 5, a glow discharge is generated across the electrode 5 and an anode electrode 2 to form plasma. Next, electrons extracted from the plasma by an electron beam accelerating electrode 3 collide with arsenic gas in an ion generating chamber 10 to generate plasma, which is extracted by a plasma ion extracting electrode 11. In this constitution, through holes (b) with a diameter of 0.5-0.6mm capable of extracting an electron beam most efficiently are arranged with a pitch of 0.7-1.0mm. As a result, a large quantity of the electron beam can be extracted without impairing the durability of these electrodes, the current can be reduced, thus the life of the electrode 5 is extended, and the power consumption can be reduced.

24. 发明专利

JPS62232919A CRYSTAL GROWTH 失效
公开(公告)号：JPS62232919A
公开(公告)日：1987-10-13
申请号：JP7628486
申请日：1986-04-02
申请人： RIKAGAKU KENKYUSHO
发明人： DOI KONEN , AOYANAGI KATSUNOBU , NANBA SUSUMU
IPC分类号： H01L21/205 , C23C16/48 , H01L21/263
摘要： PURPOSE:To realize ideal atomic layer epitaxy,by supplying raw material gases alternately and performing luminous radiation on a surface of a substrate crystal. CONSTITUTION:At least two kinds of raw material gases are alternately supplied in a vapor epitaxial growth method of compound crystal, and luminous radiation is performed on a surface of a substrate crystal. Then, growth temperature is made to become low, and therefore thermal decomposing reaction of the compound in the raw material gas is suppressed, so that surface photo-chemical reaction becomes a main one. Therefore, atomic layers are made to epitaxially grow digitally one by one on the substrate crystal. Hence, ideal atomic layer epitaxy is realized.

25. 发明专利

JPS61290629A ELECTRON BEAM EXCITATION ION SOURCE 失效
公开(公告)号：JPS61290629A
公开(公告)日：1986-12-20
申请号：JP13213885
申请日：1985-06-18
申请人： RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU
IPC分类号： H01J27/20 , H01J37/08
摘要： PURPOSE:To produce large current ion beam efficiently by providing means for applying negative potential against the acceleration anode onto the target cathode and an ion take-out electrode thereby increasing the ratio of ion current against the input power. CONSTITUTION:Plasma is produced in the plasma region 5 through discharge between cathode 1 and acceleration cathode 2. The electrons constituting the plasma are attracted by an acceleration anode 3 to enter into the ion producing region 7 thus to produce ions. A portion of said ions is attracted by the acceleration cathode 2 to lower the negative potential barrier to be formed near the opening of the acceleration cathode 2. Consequently, electron flow of such level as proportional to the plasma density in the plasma region 5 will flow into the ion producing region 7. In this region 7, ions are produced in proportion to the level of electron flow. Said ions are controlled of their energy by the potential of the ion take-out electrode 4b then accelerated.

26. 发明专利

JPS61273840A ELECTRON BEAM EXCITING ION IRRADIATING APPARATUS 失效
公开(公告)号：JPS61273840A
公开(公告)日：1986-12-04
申请号：JP11508585
申请日：1985-05-28
申请人： RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU
IPC分类号： G21C5/04 , H01J27/20 , H01J37/08
摘要： PURPOSE:To enable irradiation of a large quantity of low energy ions onto a sample by providing means for controlling the voltage between a sample arranging section and an acceleration anode thereby controlling the plasma density under plasma region. CONSTITUTION:Electrodes 1-3 and a sample arranging section 4 are contained in a container filled with argon gas thus to constitute an electron beam exciting ion irradiator. Then a plasma is produced in the plasma region 5 through discharge between a cathode 1 and an acceleration cathode 2 to attract the composition electrons through an acceleration anode 3 into the ion producing region 7 thus to flow the electron current of such level as proportional with the plasma density in the plasma region 5 and to produce the ions. The energy of ions is controlled through the potential at the sample arranging section 4 prior to irradiation onto a sample 18. Consequently, large current ion beam can be irradiated under low energy region through control of irradiating ions.

27. 发明专利

JPS58194333A Crystal composition controlling method at crystal layer interface by ion implantation 失效
标题翻译：通过离子植入在晶体层界面的晶体组成控制方法
公开(公告)号：JPS58194333A
公开(公告)日：1983-11-12
申请号：JP7801582
申请日：1982-05-10
申请人： Rikagaku Kenkyusho
发明人： DOI KOUNEN , AOYANAGI KATSUNOBU , IWAI SOUHACHI , MIHARA MASARU , NANBA SUSUMU
IPC分类号： C30B29/40 , C30B31/22 , H01L21/203 , H01L21/205 , H01L21/265 , H01L21/322
CPC分类号： H01L21/265
摘要： PURPOSE:To implant impurity ion into the desired narrow region and to execute fine control of crystal composition at the area near the interface of GaAlAs by implanting inpurity ion to the area near the interface of GaAlAs in different crystal composition with the ion implantation technique. CONSTITUTION:An impurity ion like Zn ion is implanted to the interface of crystal layers 22, 23 in a Ga1-xAlxAs (0
摘要翻译：目的：通过离子注入技术，将杂质离子注入到所需的窄区域，并通过在不同晶体组成的GaAlAs界面附近注入不纯的离子，在GaAlAs界面附近的区域对晶体组成进行精细的控制。构成：在含有不同AlAs浓度（x）的两个晶体层22,23的Ga1-xAlxAs（0≤x≤1）半导体中，将诸如Zn离子的杂质离子注入晶体层22,23的界面。如上所述获得的样品被送到热处理。由此，可以除去由离子注入产生的缺陷，同时可以在区域25中形成具有层22,23的中间晶体组成的GaAlAs层26。

28. 发明专利

JPS55131730A CONCAVED ECHELETTE GRATING AND ITS PROCESS 失效
公开(公告)号：JPS55131730A
公开(公告)日：1980-10-13
申请号：JP3880279
申请日：1979-03-31
申请人： RIKAGAKU KENKYUSHO , SHIMADZU CORP
发明人： AOYANAGI KATSUNOBU , NANBA SUSUMU , SANO KAZUO
IPC分类号： G01J3/18 , G02B5/18 , G02B27/44
摘要： PURPOSE:To obtain an echelette grating with a single blaze angle by forming a lattice groove in a film provided on a concaved substrate, by making the grate- shaped film a mask for the substrate and by treating the substrate by ion or electron etching. CONSTITUTION:The film 3 is provided on the concaved grating substrate 2 and is coated with the photoresist 4. An interference fringe that is an original form of a diffraction grating is printed on the substrate, which is developed to leave the grate-shaped film 3. The film 3 plays a role of the mask in the ion or electron etching process. The etching rate is minimum when the process is performed in the direction perpendicular or approximately parallel to the incident direction of ions, and it is maximum in a face that makes a certain angle with the incident beam. Accordingly when the ion beam I is applied to the surface of the substrate at a proper angle beta as shown in Figure, the etching is carried out quickly in the direction perpendicular to the surface of substrate, and is carried out slowly in the direction perpendicular to the grate face, then the etching progresses as shown by (A), (B) and (C) in Figure, the asymmetric groove is formed. An alpha is a blaze angle.

29. 发明专利

JPS5424653A SUBSTRATE FOR ECHELETTE GRATING AND METHOD OF MANUFACTURING SAME 失效
公开(公告)号：JPS5424653A
公开(公告)日：1979-02-24
申请号：JP9006177
申请日：1977-07-27
申请人： RIKAGAKU KENKYUSHO
发明人： NANBA SUSUMU , AOYANAGI KATSUNOBU , SANO KAZUO
IPC分类号： G02B5/18

30. 发明专利

JP2006185962A SUBSTRATE FOR SEMICONDUCTOR GROWTH AND MANUFACTURING METHOD FOR SEMICONDUCTOR FILM 审中-公开
公开(公告)号：JP2006185962A
公开(公告)日：2006-07-13
申请号：JP2004374976
申请日：2004-12-24
申请人： TOKYO INST TECH , RIKAGAKU KENKYUSHO , TOKUYAMA CORP
发明人： AOYANAGI KATSUNOBU , TAKEUCHI MICHIICHI , KAWASAKI KOJI , KINOSHITA TORU
IPC分类号： H01L21/205 , C23C16/34 , C30B25/18
摘要： PROBLEM TO BE SOLVED: To provide a group III nitride growing method up to the substrate surface as well as a substrate surface protection method for effectively preventing the contamination on the surface for growth of a substrate, oxidization, and generation of a surface defect even in the case that the substrate for semiconductor growth is exposed to the oxygen environment in the atmosphere, because of reasons such as that the substrate for semiconductor growth and the group III nitride semiconductor film are different in terms of manufacture conditions or manufacture apparatuses. SOLUTION: On the semiconductor substrate surface, a surface protective film consisting of Al X In Y Ga 1-X-Y N (0≤X≤1, 0≤Y≤1) is formed whose re-evaporation temperature is lower than the substrate. The semiconductor is grown up on the substrate by removing the surface protective film before the semiconductor growth. COPYRIGHT: (C)2006,JPO&NCIPI

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