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21. 发明专利

JPH08293489A METHOD OF DRY ETCHING GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR 失效
公开(公告)号：JPH08293489A
公开(公告)日：1996-11-05
申请号：JP10114095
申请日：1995-04-25
申请人： SHARP KK
发明人： FURUKAWA MASAKI , SUGAWARA SATOSHI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L33/20 , H01L33/32 , H01L33/00
摘要： PURPOSE: To obtain an etching face and an end face excellent in a flatness by a method wherein mixed gas of tetrachlorosilicon and chlorine is used as etching gas in reactive ion etching of a specific gallium nitride based compound semiconductor. CONSTITUTION: A GaN layer 6 formed with a pattern of a mask is placed on a cathode electrode 3 made of quartz of a parallel flat plate type RIE device to be discharged in vacuum. Continuously, as etching gas in reactive ion etching of a gallium nitride based compound semiconductor represented by Alx Ga1-x N (0

22. 发明专利

JP2547459B2 失效
公开(公告)号：JP2547459B2
公开(公告)日：1996-10-23
申请号：JP2295590
申请日：1990-01-31
申请人： SHARP KK
发明人： TAKIGUCHI HARUHISA , INOGUCHI KAZUHIKO , ATSUNUSHI FUMIHIRO , OKUMURA TOSHUKI , SAKANE CHITOSE , SUGAWARA SATOSHI , NAKATSU HIROSHI
IPC分类号： H01S5/00 , H01S3/18

23. 发明专利

JPH0774432A SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH0774432A
公开(公告)日：1995-03-17
申请号：JP17068394
申请日：1994-07-22
申请人： SHARP KK
发明人： KUDO HIROAKI , TAKIGUCHI HARUHISA , INOGUCHI KAZUHIKO , NAKANISHI CHITOSE , SUGAWARA SATOSHI
IPC分类号： H01L33/14 , H01L33/30 , H01S5/00 , H01S3/18 , H01L33/00
摘要： PURPOSE:To enable stable single transverse mode oscillation and single longitudinal mode oscillation of small oscillation threshold current by forming a diffraction grating on a surface of an optical guide layer formed above an active layer and by providing an epitaxial support layer. CONSTITUTION:Since a diffraction grating 14 is formed on a surface of a surface of an optical guide layer 5 formed on an active layer 3, it is possible to enlarge refraction factor difference in a vertical transverse direction to a resonator direction without damaging combination efficiency between laser beam generated in the active layer 3 and the diffraction grating 14. Therefore, stable single transverse mode oscillation and single longitudinal mode oscillation can be acquired. Since the active layer 3 is not formed on the diffraction grating 14, crystallinity of the active layer 3 does not lower and element characteristic improves as an oscillation threshold current becomes smaller. Furthermore, since an epitaxial layer 16 is provided, change of a configuration wherein a stripe groove 15 is buried is prevented and reproducibility of element characteristic of a semiconductor laser device is improved.

24. 发明专利

JPH0642583B2 失效
公开(公告)号：JPH0642583B2
公开(公告)日：1994-06-01
申请号：JP20423188
申请日：1988-08-17
申请人： SHARP KK
发明人： KUDO HIROAKI , TAKIGUCHI HARUHISA , SAKANE CHITOSE , SUGAWARA SATOSHI
IPC分类号： H01S5/00 , H01S5/12 , H01S5/24 , H01S3/18
摘要： A semiconductor laser device with a resonator containing an active region for laser oscillating operation is disclosed which comprises a third-order diffraction grating with a periodic corrugation for producing feedback of laser light, the corrugation being of substantially rectangular shape, wherein the ratio of the width of each convex portion of the corrugation to the periodicity of the corrugation is in the range of 0.20 to 0.25, 0.40 to 0.60, or 0.70 to 0.95.

25. 发明专利

JPH0697575A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH0697575A
公开(公告)日：1994-04-08
申请号：JP24507992
申请日：1992-09-14
申请人： SHARP KK
发明人： TAKIGUCHI HARUHISA , INOGUCHI KAZUHIKO , KUDO HIROAKI , SUGAWARA SATOSHI , TANETANI MOTOTAKA
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/18
摘要： PURPOSE:To enable the current constriction capacity to be increased furthermore, the difference in the equivalent refractive indexes inside and outside of a striped trench to be adjusted within a wide range by a method wherein laser beam transmitting layers in addition to a laser beam absorbing layer is to be provided in a photocurrent confirement means so as to adjust the mixed crystal ratio and the thickness of these laser beam transmitting layers. CONSTITUTION:The semiconductor laser is provided with a semiconductor substrate 101, a laminated structure formed on the semiconductor substrate 101 and a current light confirement means 150 formed on the laminated structure 140. The current light confirement means 150 is provided with two multilayer light confirement parts (current light confirement layers) 151a and b as well as a striped trench so as to spatially separate the parts 151a from 151b. 152. The forbidden band widths of laser beam transmitting layers 107 and 109 are specified to be wider than that of an active layer 103 so that the laser beams may transmit these layers 107, 109. Furthermore, the forbidden band width of a laser beam absorbing layer 108 is specified to be narrower than that of the active layer 103 so that the layer 108 may absorb the laser beams.

26. 发明专利

JPH05299780A 失效
公开(公告)号：JPH05299780A
公开(公告)日：1993-11-12
申请号：JP10650892
申请日：1992-04-24
申请人： SHARP KK
发明人： SUGAWARA SATOSHI
IPC分类号： H01L21/205 , H01L33/10 , H01L33/12 , H01L33/14 , H01L33/30 , H01S5/00 , H01S5/223 , H01S3/18 , H01L33/00
摘要： PURPOSE:To realize the re-growth of a semiconductor thin film while variations in carrier concentration are controlled by supplying an organometallic compound gas made of a dopant metal when the temperature of a substrate is increased to a re-growth starting temperature. CONSTITUTION:An n-GaAs buffer layer 11, an n-Al0.5Ga0.5As cladding layer 12, a non-doped Al0.13Ga0.87As active layer 13, a p-Al0.5Ga0.5As carrier/barrier layer 14, and a p-Al0.25Ga0.75As guide layer 15 are successively grown over a GaAs substrate 10. Subsequently, three-dimensional diffraction gratings 25 are formed, and the gratings are transferred to the p-Al0.25Ga0.75As guide layer 15. Then, a p-Al0.6Ga0.4As etching-stop layer 16 and an n-GaAs current block layer 17 are successively grown. The second time growth is carried out while diethylzinc is run and also a temperature is increased to 750 deg.C. A third time growth is performed in the same manner as in the second time growth, whereby a drop in carrier concentration of the p-Al0.25Ga0.75As guide layer 15 can be suppressed, and a semiconductor laser with a superior high temperature performance characteristic can be realized.

27. 发明专利

JPH0548205A SEMICONDUCTOR LASER ELEMENT OF DISTRIBUTED FEEDBACK TYPE, AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0548205A
公开(公告)日：1993-02-26
申请号：JP20084491
申请日：1991-08-09
申请人： SHARP KK
发明人： SUGAWARA SATOSHI , TAKIGUCHI HARUHISA , INOGUCHI KAZUHIKO , NAKANISHI CHITOSE , KUDO HIROAKI
IPC分类号： G02B5/18 , H01S3/08 , H01S5/00 , H01S5/10
摘要： PURPOSE:To obtain a semiconductor laser element of a distributed feedback type, which has an effective refractivity waveguide structure having a reduced waveguide loss, and which oscillates in a stable fundamental transverse mode, by so forming a light guide layer located in the bottom part of a stripe groove to be a current constricting mechanism that its thickness is increased proceeding from near the sidewall of the stripe groove to the central part in its width direction. CONSTITUTION:By a first crystal growth process, on a semiconductor substrate 100, formed are in succession a first clad layer 102, an active layer 103, a carrier barrier layer 104, a current blocking layer 105, etc. On the surfaces of the carrier barrier layer 104 and the current blocking layer 105, diffraction gratings 106 are stamped. By a second crystal growth process, on the carrier barrier layer 104 and the current blocking layer 105 whereon the diffraction gratings 106 are stamped, formed are in succession a second clad layer 108 and a contact layer 109.

28. 发明专利

JPH03227087A SEMICONDUCTOR LASER ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH03227087A
公开(公告)日：1991-10-08
申请号：JP2295590
申请日：1990-01-31
申请人： SHARP KK
发明人： TAKIGUCHI HARUHISA , INOGUCHI KAZUHIKO , ATSUNUSHI FUMIHIRO , OKUMURA TOSHIYUKI , SAKANE CHITOSE , SUGAWARA SATOSHI , NAKATSU HIROSHI
IPC分类号： H01S5/00
摘要： PURPOSE:To enable an active layer to be accurately controlled in width by a method wherein a mesa stripe-like structure provided with the side face of a {111} plane is grown in a groove formed on a substrate. CONSTITUTION:A GaAs current block layer 2 is formed on an N-type GaAs substrate 1a, and a groove 10a is formed through an MOCVD method on the current block layer 2 extending along a [011] direction. An N-type AlGaAs clad layer 3a, an AlGaAs active layer 4a, and a P-type AlGaAs clad layer 5a are continuously grown through an MOCVD method on the surface of the substrate 1a in the groove 10a. In succession, a triangular mesa stripe structure whose side face is a {111} B plane is formed on the groove 10a. At this point, the clad layer 3b, the active layer 4b, and the clad layer 5b are continuously grown even on the current blocking layer 2. Thereafter, a P-type AlGaAs buried layer 6 and a P-type GaAs contact layer 7 are successively grown, and an Au/Zn electrode 8 and an Au/Ge electrode 9 are built respectively.

29. 发明专利

JPH03217068A SEMICONDUCTOR LASER ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH03217068A
公开(公告)日：1991-09-24
申请号：JP1333390
申请日：1990-01-22
申请人： SHARP KK
发明人： SUGAWARA SATOSHI , TAKIGUCHI HARUHISA , KUDO HIROAKI , SAKANE CHITOSE
IPC分类号： H01S5/00
摘要： PURPOSE:To enable two types of laser light whose deflection direction differs mutually to be applied and obtain a laser element suitable for light source for an optic-related equipment such as a light source for measuring light by providing lamination structures with an active region on the upper surface and side surface of a stripe-shaped ridge structure which is formed on a semiconductor substrate and by providing a buried layer covering them. CONSTITUTION:The title item has a semiconductor substrate 1, a stripe-shaped ridge structure 11 which is formed on the semiconductor substrate 1, a first lamination structure 10a which is provided on the upper surface of the ridge structure 11 and has an active region 4, a second lamination structure 10b which is provided on one side surface of the ridge structure 11 and has an active region, a third lamination structure 10c which is provided on the other side surface of the ridge structure 11 and has an active region, a buried layer 6 covering the first to third lamination structures 10a-10c, a first electrode 8a which is formed on the buried layer 6 and is electrically connected to the second lamination structure 10b, a second electrode 8b which is formed on the buried layer 6 and is electrically connected to the third lamination structure 10c, and a third electrode 8c which is formed on the buried layer 6 and is electrically connected to the third lamination structure 10c.

30. 发明专利

JPH03165585A MANUFACTURE OF SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH03165585A
公开(公告)日：1991-07-17
申请号：JP30565489
申请日：1989-11-24
申请人： SHARP KK
发明人： INOGUCHI KAZUHIKO , TAKIGUCHI HARUHISA , ATSUNUSHI FUMIHIRO , NAKATSU HIROSHI , SAKANE CHITOSE , SUGAWARA SATOSHI , OKUMURA TOSHIYUKI
IPC分类号： H01S5/00
摘要： PURPOSE:To easily form a semiconductor laser element of buried structure by a method wherein a selective growth is performed onto an InP substrate provided with a face (100) on which an inverted mesa ridge has been formed in a orientation [011]. CONSTITUTION:Photoresist is applied onto the face (100) of an N-type InP substrate 1 and left unremoved in a stripe in a orientation [011]. Then, the substrate 1 is subjected to a chemical etching using an HBr etchant to form an inverted mesa-shaped ridge of a width of 5mum. Crystal is made to grow on the substrate 1 provided with an inverted mesa-shaped protrusion through a vacuum MOCVD. The grown layer is a multilayered thin film composed of an Si-doped N-type InP buffer layer 2, an undoped GaInAsP active layer 3, a Zn doped P-type InP clad layer 4, and a Zn doped P-type GaInAsP contact layer, and at this point, the growth does not take place on a face {111} B due to a growth rate dependent on the face orientation, so that a trapezoidal region surrounded with its side face of a face {111} B and its upside of a face (100) in a direction that a growth takes place. Lastly, an AuGe electrode 7 and an AuZn electrode 8 are provided to the N-side and the P-side respectively.

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