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21. 发明专利

JPS583142A OPTICAL INFORMATION PROCESSOR 失效
公开(公告)号：JPS583142A
公开(公告)日：1983-01-08
申请号：JP10268281
申请日：1981-06-30
申请人： SHARP KK
发明人： TAKIGUCHI HARUHISA , KURATA YUKIO , MATSUI KANEKI
IPC分类号： G03B13/36 , G02B7/00 , G02B7/28 , G11B7/085 , G11B7/09 , G11B21/02
摘要： PURPOSE:To perform focusing and tracking with a coil wound cylindrically around a yoke and a coil wound in spiral on the surface of the yoke. CONSTITUTION:A magnetic circuit consists of permanent magnets 15 and 16, and yokes 12, 13 and 14. A focus controlling coil 9' is wound in spiral shape and along the surface of the yoke 13. Coils 10 and 11 for track control and pickup feeding are cylindrically wound around the yoke 13. A pickup 17 is loaded on the upper part of the coils for focus control, track control and feeding control of the pickup.

22. 发明专利

JPS57147142A PICKUP DEVICE 失效
公开(公告)号：JPS57147142A
公开(公告)日：1982-09-10
申请号：JP3179081
申请日：1981-03-04
申请人： SHARP KK
发明人： TAKIGUCHI HARUHISA , KURATA YUKIO , MATSUI KANEKI
IPC分类号： G02B7/09 , G11B7/09 , G11B21/02
摘要： PURPOSE:To achieve a stable servo system, by detecting the fluctuation in a pickup driving section as an electric signal, in an actuator as a pickup driving means making focus servo and track servo. CONSTITUTION:A magnetic circuit 2 drives and controls a pickup driving part 3 borne with an elastic support 1 via a driving voice coil 4 linked to the part 3. A fluctuation detecting magnetic circuit 5 and a fluctuation detecting voice coil 6 are provided in addition to the voice coil 4 to obtain a voltage proportional to the momentum of the part 3 and this voltage is fed back to the pickup driving section. An output voltage of the voice coil 6 passes through a differential amplification circuit, a rate amplifying circuit, and an integration amplification circuit in parallel, is added with each other and fed back to the voice coil 4.

23. 发明专利

JPS56138977A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS56138977A
公开(公告)日：1981-10-29
申请号：JP4381380
申请日：1980-03-31
申请人： SHARP KK
发明人： YANO MORICHIKA , YAMAMOTO SABUROU , KURATA YUKIO , MATSUI KANEKI , HAYAKAWA TOSHIROU , TAKIGUCHI HARUHISA
IPC分类号： H01S5/00 , H01S5/20 , H01S5/223
摘要： PURPOSE:To efficiently oscillate a semiconductor laser element in a basic single mode by forming two stage grooves having different width on the substrate of a double hetero junction semiconductor laser, decreasing the thickness of a clad layer and flattening the active layer. CONSTITUTION:A groove of width W is formed on the substrate 1 of a semiconductor laser formed by laminating a double hetero junction crystalline growth layer, and a groove of width W' is further formed on the bottom a two-stage groove. Thus, since the volume of the groove can be reduced, even if the clad layer 2 is reduced in thickness, the active layer 3 can be flattened. Thus, high order mode can be sufficiently cut off, and the basic mode absorption can be avoided to efficiently oscillate in basic single mode.

24. 发明专利

JPS56116689A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS56116689A
公开(公告)日：1981-09-12
申请号：JP2029780
申请日：1980-02-19
申请人： SHARP KK
发明人： YANO MORICHIKA , YAMAMOTO SABUROU , KURATA YUKIO , MATSUI KANEKI , HAYAKAWA TOSHIROU , TAKIGUCHI HARUHISA
IPC分类号： H01L21/208 , H01S5/00 , H01S5/30
摘要： PURPOSE:To facilitate manufacture of a semiconductor laser device as well as improve its quality by selectively forming a plurality of semiconductor layers, by epitaxial growth, on the crystal surface on the inclined plane obtained by photoetching a semiconductor substrate into a step shape. CONSTITUTION:On an N type semiconductor substrate 1, an insulating layer 2 and a photoresist film 3 are formed over the whole surface. Then, the resist 3 is partially irradiated with light 4 to photoetch the substrate 1 into a step shape. Then, an insulating layer 7 and a photoresist film 8 are formed over the whole surface and partially irradiated with light 9 to photoetch the inclined plane 6 so that a crystal surface 10 is exposed below the layers 2 and 7. Then, on the insulating layer 7 on the lower step surface 5, an N type layer 11, an active layer 12 and P type layers 13 and 14 are successively formed on the crystal surface 10 by selective epitaxial growth, and then electrodes 15 and 16 are formed. Thereby, a semiconductor laser device can be manufactured by a single photoetching and a single epitaxial growth, so that the manufacture is facilitated. Moreover, the quality and the yield improve.

25. 发明专利

JP2001312953A FIELD-EMISSION TYPE ELECTRON SOURCE ARRAY AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2001312953A
公开(公告)日：2001-11-09
申请号：JP2000128131
申请日：2000-04-27
申请人： SHARP KK
发明人： MARUO YUJI , TAKIGUCHI HARUHISA , URAYAMA MASAO , IDE TETSUYA , OKI HIROSHI
IPC分类号： H01J9/02 , H01J1/304 , H01J29/04 , H01J31/12
摘要： PROBLEM TO BE SOLVED: To provide a field-emission type electron source array which is easy to manufacture and is superior in its characteristic, and to provide its manufacturing method. SOLUTION: The microfibril material 13, such as a carbon nanotube manufactured separately, is formed and inserted, by means of electrophoresis method along the axial direction of the fine hole 12, formed in the anode oxidized film 11 on the surface of a cathode electrode 10. The field-emission type electron source array is constituted of the microfibril material of a carbon nanotube, etc., of which the direction goes uniformly to the approximately vertical direction against the substrate face, is to form the electron emission part.

26. 发明专利

JP2554192B2 失效
公开(公告)号：JP2554192B2
公开(公告)日：1996-11-13
申请号：JP16233490
申请日：1990-06-20
申请人： SHARP KK
发明人： TAKIGUCHI HARUHISA , NAKATSU HIROSHI , INOGUCHI KAZUHIKO , ATSUNUSHI FUMIHIRO , SAKANE CHITOSE , OKUMURA TOSHUKI , SUGAWARA SATOSHI
IPC分类号： H01S5/00 , H01S5/042 , H01S3/18

27. 发明专利

JPH07161644A MANUFACTURE OF P-TYPE SEMICONDUCTOR THIN FILM 失效
公开(公告)号：JPH07161644A
公开(公告)日：1995-06-23
申请号：JP30998793
申请日：1993-12-10
申请人： SHARP KK
发明人： YUASA TAKAYUKI , TAKIGUCHI HARUHISA
IPC分类号： H01L21/205 , H01L21/365
摘要： PURPOSE:To manufacture a II-VI compound semiconductor thin film having a high P-type carrier concentration by a method wherein an organic matter material having an azido group is used as a P-type doping raw material and the raw material is bubbled using inert gas and is fed. CONSTITUTION:A susceptor 2 is set in the interior of a reaction tube and a substrate 3 is put on it. The susceptor 2 is heated by a heater 4. Inert gases 14 and 15 are gases of different kinds and can be used properly according to their purposes as bubbling gas use or as carrier gas use by a selection of valves 11. The gases 14 and 15 are pressure reduced by pressure reducing valves 13, the flow rates of the gases are adjusted by mass flow controllers 12 and the gases are introduced in the reaction tube 1 or bubblers 8, 9 and 10. A group II raw material is kept sealed in the bubbler 8 and is vaporized by bubbling, a group VI raw material is kept sealed in the bubbler 9 and is vaporized by bubbling and the vaporized raw materials are introduced in the tube 1. Moreover, a nitrogen doping raw material having an azido group is kept sealed in the bubbler 10 and the vaporized raw material is jetted toward the substrate 3 in the reaction tube 1.

28. 发明专利

JPH06188508A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH06188508A
公开(公告)日：1994-07-08
申请号：JP33819392
申请日：1992-12-18
申请人： SHARP KK
发明人： YAGI HISAHARU , TAKIGUCHI HARUHISA , SUGAWARA SATOSHI
IPC分类号： H01S5/00 , H01S5/223 , H01S3/18
摘要： PURPOSE:To attain a good current blocking function without sacrifice of light emission efficiency by providing a layer for retarding diffusion of impurities. CONSTITUTION:A nondoped or Se or Te doped AlxGa1-xA (x

29. 发明专利

JPH067624B2 失效
公开(公告)号：JPH067624B2
公开(公告)日：1994-01-26
申请号：JP309985
申请日：1985-01-10
申请人： SHARP KK
发明人： YOSHIDA TOMOHIKO , TAKIGUCHI HARUHISA , KANEIWA SHINJI , MATSUI KANEKI
IPC分类号： H01S5/00 , H01S5/12 , H01S5/223 , H01S3/18

30. 发明专利

JPH065581A ETCHING METHOD FOR COMPOUND SEMICONDUCTOR 失效
公开(公告)号：JPH065581A
公开(公告)日：1994-01-14
申请号：JP16239492
申请日：1992-06-22
申请人： SHARP KK
发明人： ITO SHIGETOSHI , KUDO HIROAKI , TAKIGUCHI HARUHISA
IPC分类号： H01L21/306 , H01S5/00 , H01S5/223 , H01S3/18
摘要： PURPOSE:To inhibit the operation of side etching but carry out an etching operation of AlGas semiconductor crystal which is excellent in terms of processing control by selectively wet-etching the AlGaAs semiconductor with a GaInAsP semiconductor crystal thin film as a mask. CONSTITUTION:After having epitaxially grown a GaInAsP semiconductor thin film crystal 3 whose composition is lattice-matched on a semiconductor on the surface of AlGaAs semiconductor crystal which has made an epitaxial growth on a GaAs substrate 1, a part of the thin film crystal is resist-patterned, etched and removed. With this as a mask, the AlGaAs semiconductor crystal is selectively wet-etched. This construction makes it possible to carry out a wet etching operation which inhibits side etching without producing any useless strain or inflicting damage on the internal parts of the AlGaAs semiconductor crystal.

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