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21. 发明专利

JPS5890762A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5890762A
公开(公告)日：1983-05-30
申请号：JP19109581
申请日：1981-11-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： ITOU HIROMI , OOHASHI MASAHITO , TAKAYAMA KENJI
IPC分类号： H01L27/00 , H01L21/20 , H01L21/3205 , H01L21/8234 , H01L23/52 , H01L27/06 , H01L27/088 , H01L29/78 , H01L29/786
摘要： PURPOSE:To contrive the improvement of the integration degree, by forming a MOS transistor structure into a multi-layer semiconductor device. CONSTITUTION:After manufacturing a MOS transistor TR structure A constituted of a semiconductor substrate 1, source and drain 2a, 2b, a gate 3, a field insulation layer 5, a PSG film 6 and an Si nitride film 8, an Si nitride film 9 is formed on the film 8. Next, holes 10a, 10b passing from the upper surface of the layer 9 through the layer 5 and reaching the substrate 1 and a shallow 10c on the layer 9 is formed. Next, a polycrystalline Si layer 11c used as a gate is formed in the 10c, and single-crystallized semiconductor layers 11a, 11b are grown in the holes 10a, 10b. Top end parts of these layers 11a, 11b are utilized as the source and drain of the second MOSTR. Next, an Si oxide film 12 serving as a gate oxide film is formed only on the surface of the layer 11c, and a polycrystalline Si layer 13 is formed on the surface of the layer 9 resulting in utilization thereof as the second MOSTR substrate. Then, the layer 13 is mono-crystallized with layers 11a, 11b as cores resulting in the MOSTR structure B.

22. 发明专利

JPS5890745A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5890745A
公开(公告)日：1983-05-30
申请号：JP19109881
申请日：1981-11-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： ITOU HIROMI , TAKAYAMA KENJI , OOHASHI MASAHITO
IPC分类号： H01L23/36 , H01L25/065 , H01L27/00
摘要： PURPOSE:To increase a number of elements in the functional layer by stacking the functional layers providing semiconductor elements and providing a heat radiating material in contact with a side wall of the functional layer. CONSTITUTION:A heat radiating material 4 consisting of a metal plate such as Al is fitted in such a manner as covering the external wall of a stacking type semiconductor device composed of a semiconductor substrate 1, functional layers 2a-2c and interlayer insulation films 3a-3b. The heat radiating plate 4 increase the surface area by introducing the waving structure or employs forcible cooling by allowing gas or fluid to flow into the plate. According to this constitution, a number of semiconductor elements to be formed on the functional layer can be increased because of excellent heat radiation characteristic.

23. 发明专利

JPS61285733A PATTERN TRANSFER DEVICE 失效
公开(公告)号：JPS61285733A
公开(公告)日：1986-12-16
申请号：JP12744885
申请日：1985-06-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKAYAMA KENJI
IPC分类号： H01L21/30 , G03F7/20 , H01L21/027 , H01L21/67 , H01L21/68 , H01L21/683
摘要： PURPOSE:To stabilize the center of a focus, by providing a linear supporting part, which can support a wafer by linear contact and has a protruded cross section, on the surface of a stage. CONSTITUTION:On the surface of a stage 1, a linear supporting part 11, which can support a wafer 5 by a linear contact and has protruded trapezoidal cross section, is provided. The supporting part 11 is composed of a concentric protruded part 11a and radial protruded parts 11b, which are formed in the region of said protruded part 11a. Vacuum holes 12 are provided in order to keep vacuum pressure in a loop, which is formed by each protruded part 11a and each protruded part 11b with respect to the stage 1. A vacuum tool attaching hole 4 is provided. The wafer 5 is sucked to the linear supporting part 11 with vacuum by linear contact on the stage 1. Thus the wafer is fixed. Since the wafer chuck part of the wafer is constituted in contacting method of the plane and the lines, the effects of foreign materials are reduced, and the highly accurate device is obtained.

24. 发明专利

JPS60107034A PROJECTION EXPOSURE DEVICE 失效
公开(公告)号：JPS60107034A
公开(公告)日：1985-06-12
申请号：JP21534883
申请日：1983-11-14
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKAYAMA KENJI
IPC分类号： H01L21/30 , G03F7/20 , H01L21/027
摘要： PURPOSE:To enable high-precision pattern projection and high pattern reproducibility by executing masking action through light transmission and interception actions due to selective electric operation on a liquid crystal plate. CONSTITUTION:A liquid crystal plate 8 is used for a masking aperture by the following mechanism: The X-direction segment electrode 9 of the first layer liquid crystal base 10 and the segment electrode 14 of the Y-direction, rectangular to the X-direction, of the second layer liquid crystal base 15 are formed, and when voltage is impressed to the selected segment of each electrode 9, 14, a prescribed potential difference is caused between the segment of each electrode 9, 14 and the corresponding part of a common transparent electrode 12 located between both electrodes 9, 14. The states of liquid crystals on the sides of the bases 10, 15 change in the part where potential differences occur, and the intersecting reticle 4 of both selected segments is converted into light intercepting parts and masking action is obtained at the reticle 4.

25. 发明专利

JPS59155936A Forming method of minute pattern 失效
标题翻译：分形式的形成方法
公开(公告)号：JPS59155936A
公开(公告)日：1984-09-05
申请号：JP3121583
申请日：1983-02-25
申请人： Mitsubishi Electric Corp
发明人： NISHIOKA KIYUUSAKU , NAKAJIMA MASAYUKI , WAKAMIYA WATARU , MIYAKE KUNIAKI , TAKAYAMA KENJI , OOGA HIROTOMO
IPC分类号： H01L21/306
CPC分类号： H01L21/306
摘要： PURPOSE:To obtain a minute pattern with high accuracy even on a substrate with a stepped difference by coating the upper section of the substrate with an organic film of surface reflectivity of 20% or less and coating the organic film with a photosensitive film, exposing and developing the photosensitive film to obtain the desired minute pattern, etching the organic film by plasma while using the pattern as a mask, and employing the organic film as a mask for processing the substrate. CONSTITUTION:An organic film 3 of surface reflectivity of 20% or less is applied onto a substrate 1, and thermally treated, and a photosensitizing material is applied onto the film 3 to form a photosensitive film 2. A material difficult to be mixed with the film 2 is selected as the film 3 at that time, and a negative type resist, etc. mainly comprising polyisoprene cyclized rubber are selected as the film 3 when a positive type resist mainly comprising novolac resin is employed as the photosensitizing material. The film 2 is exposed and developed to acquire a desired minute pattern, and the film 3 is changed into a predetermined pattern through O2 plasma etching while using the minute pattern as a mask. The substrate 1 is etched while employing laminated films of the residual films 2 and 3 as masks.
摘要翻译：目的：即使在具有阶梯差的基板上，通过用表面反射率为20％以下的有机膜涂布基板的上部，也可以用感光膜涂布有机膜，以高精度获得微细图案，曝光和显影感光膜以获得所需的微小图案，同时使用图案作为掩模，通过等离子体蚀刻有机膜，并使用有机膜作为掩模来处理基板。构成：将表面反射率为20％以下的有机膜3施加到基板1上，进行热处理，将光敏材料施加到膜3上以形成感光膜2.不易与此时选择薄膜2作为薄膜3，当使用主要包含酚醛清漆树脂的正型抗蚀剂作为感光材料时，选择主要包含聚异戊二烯环化橡胶的负型抗蚀剂等作为薄膜3。将膜2曝光和显影以获得所需的微小图案，并且通过O 2等离子体蚀刻将膜3改变为预定图案，同时使用微小图案作为掩模。在使用残留膜2和3的叠层膜作为掩模的同时蚀刻基板1。

26. 发明专利

JPS59155930A Forming method of minute pattern 失效
标题翻译：分形式的形成方法
公开(公告)号：JPS59155930A
公开(公告)日：1984-09-05
申请号：JP3121383
申请日：1983-02-25
申请人： Mitsubishi Electric Corp
发明人： WAKAMIYA WATARU , ITAKURA HIDEAKI , TAKAYAMA KENJI , NISHIOKA KIYUUSAKU , HATANAKA MASAHIRO , NAKAJIMA MASAYUKI
IPC分类号： G03F7/26 , G03F7/095 , G03F7/20 , H01L21/027
CPC分类号： G03F7/095
摘要： PURPOSE:To obtain a reversely inclined layer of a minute pattern fitted to a lift-off through one-time ultraviolet beam irradiation without generating an excessive boundary layer by laminating and forming a photosensitive film as a first layer and a photosensitive film as a second layer, a kind thereof is the same as the film but a gamma value and sensitivity thereof differ, on a semiconductor substrate and beam-transferring and developing the surface. CONSTITUTION:A first positive type resist layer 12 photosensitized to far ultraviolet beams is applied on a semiconductor substrate 11 as a photosensitive film as a first layer, and a second positive type resist layer 13, a kind thereof is the same as the layer 12 but a gamma value and sensitivity thereof are lower, is laminated and applied onto the layer 12. A solvent contained in these layers is evaporated at a proper temperature, ultraviolet beams 15 are irradiated through mask patterns 14, and resists in exposed sections are removed through development. Accordingly, development advances up to the layer 12 from the layer 13 while intruding to the inside of the layer 12, and reversely inclined layers effective for a lift-off are obtained, thus preventing the generation of an excessive boundary layer between the layers 12 and 13.
摘要翻译：目的：通过一次紫外线照射获得装配到剥离的微小图案的反向倾斜层，而不会通过层压和形成感光膜作为第一层而产生过量的边界层，并且将感光膜作为第二层，其类型与膜相同，但是在半导体衬底上的伽马值和灵敏度不同，并且传播和显影表面。构成：对作为感光性膜的半导体基板11作为第一层施加对远紫外线光敏的第一正型抗蚀剂层12，第二正型抗蚀剂层13的种类与层12相同，但是其伽马值和灵敏度较低，被层压并施加到层12上。这些层中包含的溶剂在适当的温度下蒸发，通过掩模图案14照射紫外光束15，并通过显影除去曝光部分中的抗蚀剂。因此，显影从层13进入到层12的同时进入到层12的内部，并且获得了对剥离有效的反向倾斜层，从而防止在层12和层12之间产生过量的边界层 13。

27. 发明专利

JPS59155839A Mask for transferring pattern 失效
标题翻译：掩码传输模式
公开(公告)号：JPS59155839A
公开(公告)日：1984-09-05
申请号：JP3121183
申请日：1983-02-25
申请人： Mitsubishi Electric Corp
发明人： HATANAKA MASAHIRO , TAKAYAMA KENJI , NAKAJIMA MASAYUKI , OOGA HIROTOMO , MIYAKE KUNIAKI , ITAKURA HIDEAKI
IPC分类号： G03F1/00 , G03F1/54 , G03F7/20 , H01L21/027
CPC分类号： G03F7/70191 , G03F1/50
摘要： PURPOSE:To obtain a pattern with high accuracy by uniform exposing over the entire surface by providing a light shielding film at the thickness changed in accordance with the thickness of a photosensitive resin on the surface of a transparent mask blank material for forming a pattern of the photosensitive resin on a stepped base surface. CONSTITUTION:The thickness of a photosensitive resin film 5 is thinner on projections 3 than the thickness of the film 5 on a semiconductor substrate 4 or the like where there are no projections 3 if the film 5 is provided on the base surface of the substrate 4 having the projections 3. A light shielding film 9 of metallic Cr, etc. is formed on the surface of a transparent mask blank material 1 so as to decrease the thickness of the parts 13 corresponding to the projections 3 in accordance with the thickness of the film 5. The photosensitive resin is uniformly exposed as shown by exposing arrows 10 by using such mask and is developed, by which parts 11, 12 to be exposed in a prescribed pattern are formed on the projections 3 as well without leaving the remaining resist thereon.
摘要翻译：目的：为了通过在透明掩模材料的表面上的感光性树脂的厚度变化的厚度提供遮光膜，通过在整个表面上均匀曝光来获得高精度的图案，以形成图案的图案感光树脂在台阶基面上。构成：如果膜5设置在基板4的基面上，则在突起3上的感光性树脂膜5的厚度比没有突起3的半导体基板4等上的膜5的厚度薄具有突起3.在透明掩模坯料1的表面上形成金属Cr等的遮光膜9，以便根据厚度来减小对应于突起3的部分13的厚度感光性树脂通过使用这种掩模通过暴露箭头10所示均匀地曝光，并且显影，并且在凸起3上形成要以规定图案露出的部分11,12，而不在其上留下剩余的抗蚀剂。

28. 发明专利

JPS58153351A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS58153351A
公开(公告)日：1983-09-12
申请号：JP3766482
申请日：1982-03-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： NISHIOKA KIYUUSAKU , FUKUMOTO HAYAAKI , HIRAYAMA MAKOTO , TAKAYAMA KENJI , ITOU HIROMI
IPC分类号： H01L21/76 , H01L21/3205 , H01L21/762
摘要： PURPOSE:To form an ultrafine pattern by forming an etched groove with a beam on the coated surface of a substrate and forming the material of the film only in the etched groove in the same reactive layer, thereby flattening the surface. CONSTITUTION:When an SiO2 film 1 on an Si substrate 2 is etched by Ar ion beam to form a groove 3 and a (CH3)3Al is introduced and a CO2 laser beam L is emitted to the groove 3, aluminum wirings 4 are formed only in the groove 3, the surface is flat, an element can be microminiaturized and continuously formed. Thus, the boundary between the wirings 4 and the film 1 is clean, and a semiconductor device having high reliability can be obtained. A groove 6 is formed by an Ar ion beam I on an Si substrate 5, which is then heated to approx. 400 deg.C, SiH4+O2 is introduced, CO2 laser beam L is emitted to the groove 6. Then, the SiO2 is accumulated only in the groove 6, and an element isolating layer 7 is formed on the flat surface.

29. 发明专利

JPS58153350A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS58153350A
公开(公告)日：1983-09-12
申请号：JP3766382
申请日：1982-03-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKAYAMA KENJI , NISHIOKA KIYUUSAKU , ITOU HIROMI , HIRAYAMA MAKOTO , FUKUMOTO HAYAAKI
IPC分类号： H01L21/76 , H01L21/31 , H01L21/762
摘要： PURPOSE:To readily microminiaturize an element pattern by forming by an accumulation laminating method an element isolating layer of the same thickness as an element forming semiconductor layer around the semiconductor layer with the prescribed thickness, thereby flattening the surface. CONSTITUTION:An n type layer 2 is superposed on a p type Si substrate 1, the prescribed region is surrounded by a CVD method, an element isolating layer 3a of the prescribed thickness is formed, and an element forming n type Si layer 4a of the same thickness as the layer 3a is formed again by a CVD method. Since the flat surface is formed, the element pattern formed on the layer 4a can be readily microminiaturized. Even if the p type Si substrate is altered to an insulating plate, similar effect can be performed.

30. 发明专利

JPS5890739A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5890739A
公开(公告)日：1983-05-30
申请号：JP19109781
申请日：1981-11-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： ITOU HIROMI , TAKAYAMA KENJI , OOHASHI MASAHITO
IPC分类号： H01L27/00 , H01L21/31 , H01L21/3205 , H01L23/52
摘要： PURPOSE:To make unnecessary formation of through hole for connection and easily obtain a stacking structure by using an intrinsic Si single crystal layer for the interlayer insulation film in a semiconductor device operating at a low temperature. CONSTITUTION:A connecting region 6 is formed without providing a through hole by using an intrinisic Si single crystal 5 for an insulating film 5 between the first wiring layer 2 and the second wiring layer on the Si substrate 1 and by executing diffusion to the corresponding region. Moreover, a high quality Si crystal layer can also be formed by staking thereon the poly Si and then annealing it by laser beam. However, such a device must be kept at such a low temperature that movement of carrier in the intrinsic Si crystal can be ignored.

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