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    • 23. 发明专利
    • HIGH SPEED JOINING METHOD FOR STEEL PLATE
    • JPS61253178A
    • 1986-11-11
    • JP9535085
    • 1985-05-07
    • MITSUBISHI HEAVY IND LTD
    • WAKAMOTO IKUOKOBAYASHI TOSHIRONAGAREDA MASAZUMI
    • B23K9/08B23K20/00
    • PURPOSE:To heat both end faces efficiently and to make the pressure welding highly speedy by passing a comparatively lower DC current between the steel plates which are abutted at intervals and by generating the arc to move in the width direction of the steel plate by applying an alternating magnetic field in the thickness direction as well. CONSTITUTION:A steel plate 1 is abutted at intervals and pinched the upper and lower by a clamp device 2. An arc is generated locally by passing a comparatively low current to the steel plate 1 from DC power source 6. The arc is then moved in the width direction with the action of the electromagnetic force in the width direction on the arc when an alternating magnetic field 10 is generated in the gap between the steel plates 1 by passing the alternating current to an exciting coil 8 from an alternating exciting power source 9. The both end faces 12 of the steel plate 1 can be uniformly heated accordingly. Thereafter the pressure welding is performed by a pressure device 3. The pressure welding of the steel plate having larger sectional area at high speed with comparatively low current is thus enabled.
    • 24. 发明专利
    • Vacuum vapor-deposition apparatus and method for controlling temperature
    • 真空蒸发沉积装置和控制温度的方法
    • JP2010150577A
    • 2010-07-08
    • JP2008327518
    • 2008-12-24
    • Mitsubishi Heavy Ind Ltd三菱重工業株式会社
    • HIRANO TATSUYAKOBAYASHI TOSHIRO
    • C23C14/24H01L51/50H05B33/10
    • C23C14/243C23C14/12
    • PROBLEM TO BE SOLVED: To provide a vacuum vapor-deposition apparatus which can uniformize a temperature distribution with a simple structure and reduce an excessive loading of a material, and to provide a method for controlling temperature.
      SOLUTION: This vacuum vapor-deposition apparatus comprises: a vacuum chamber 1 that can accommodate a body B to be vapor-deposited therein, which is carried in from the outside; a crucible 2 which is arranged in the vacuum chamber 1 and accommodates a vapor-deposition material M therein; a heat source 3 which heats the crucible 2 and vaporizes the vapor-deposition material M; and a plurality of support members 5 which are dispersedly arranged in the bottom 2c of the crucible 2, support the crucible 2, and also transfer heat between the crucible 2 and the floor 1a of the vacuum chamber 1.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 解决的问题:提供一种能够以简单的结构均匀化温度分布并减少材料过度加载的真空蒸镀装置,并提供一种控制温度的方法。 该真空气相沉积装置包括:真空室1,其能够容纳从外部进行气相沉积的主体B; 坩埚2布置在真空室1中并容纳蒸镀材料M; 加热坩埚2并蒸发蒸镀材料M的热源3; 并且分散地布置在坩埚2的底部2c中的多个支撑构件5支撑坩埚2,并且还在坩埚2和真空室1的地板1a之间传递热量。版权所有(C) )2010,JPO&INPIT
    • 27. 发明专利
    • VACUUM DEPOSITION APPARATUS
    • JP2006225758A
    • 2006-08-31
    • JP2005355653
    • 2005-12-09
    • MITSUBISHI HEAVY IND LTDMITSUBISHI HITACHI METALS
    • SATO KEIICHIKOBAYASHI TOSHIROKATO MITSUOKAMIKAWA SUSUMUWADA KOZO
    • C23C14/24H01L51/50H05B33/10
    • PROBLEM TO BE SOLVED: To provide a vacuum deposition apparatus which, even for vapor deposition materials having different evaporation quantities and evaporation temperatures, exhibits satisfactory control performance of the heating temperature of the vapor deposition materials, and consequently can highly accurately control the vapor quantity of the vapor deposition materials. SOLUTION: The vacuum deposition apparatus is provided with: evaporation chambers 1a, 1b disposed at the lower side of a chamber 3 whose wall face is heated, and respectively vaporizing or subliming different vapor deposition materials 4a, 4b to thereby generate the vapor of the vapor deposition materials 4a, 4b; two spool shutters 6 respectively controlling the vapor quantity of the vapor deposition materials 4a, 4b from the evaporation chambers 1a, 1b; and a mixing chamber 7 to which the two spool shutters 6 face, and where each vapor of the vapor deposition materials 4a, 4b is mixed, and the vacuum deposition apparatus causes the mixed vapor to be vapor-deposited on a substrate 5 arranged at the upper side, wherein the space between the spool shutter 6 on the side of the vapor deposition material 4b having smaller evaporation quantity or lower evaporation temperature and the evaporation chamber 1b is provided with a porous plate 11 having a plurality of pores 11a. COPYRIGHT: (C)2006,JPO&NCIPI