专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明专利

JP2000010083A LIQUID CRYSTAL DISPLAY DEVICE AND ITS PRODUCTION 失效
公开(公告)号：JP2000010083A
公开(公告)日：2000-01-14
申请号：JP18023098
申请日：1998-06-26
申请人： ADVANCED DISPLAY KK , MITSUBISHI ELECTRIC CORP
发明人： MAEJIMA TARO , SAKATA ISAO , YOSHIDA KAZUO , KINOSHITA YOSHIMI
IPC分类号： G02F1/1333 , F21V8/00 , G02F1/1335 , G02F1/13357 , G09F9/00
摘要： PROBLEM TO BE SOLVED: To obtain a liquid crystal display device capable of preventing the display defect by the interference between a liquid crystal display panel and a backlight unit or casing and uniformly maintaining the brightness of the backlight unit by disposing the liquid crystal display panel exhibiting an approximately spherical shape in such a manner that the portion near its central part bulges outward. SOLUTION: The liquid crystal display panel 1 is formed to the approximately spherical shape so as to obviate the occurrence of the display defect (paddling) by the interference with other parts, such as light transmission plate 2 of the backlight unit 3. The liquid crystal display panel 1 is so disposed that the portion near its central part bulges outward for this purpose. Then, the distance G2 to the light transmission plate 2 is largest in the central part P and, therefore, the interference with the backlight unit, such as light transmission plate 2, and the casing, etc., may be surely prevented. Even more, the peripheral edge of the liquid crystal display panel 1 is approximately flush with each other and, therefore, the panel may be easily and closely disposed in the notched part 2a of the light transmission plate 2.

22. 发明专利

JP2000002863A DEVICE FOR MANUFACTURING LIQUID CRYSTAL PANEL AND ITS METHOD 失效
公开(公告)号：JP2000002863A
公开(公告)日：2000-01-07
申请号：JP16901898
申请日：1998-06-16
申请人： ADVANCED DISPLAY KK , MITSUBISHI ELECTRIC CORP
发明人： TADA MASAHIKO , ADACHI KOHEI , TOYOSHIMA MEIKI , KONO SUSUMU , YOSHIDA KAZUO , KASHIBA YOSHIHIRO , KINOSHITA YOSHIMI
IPC分类号： G02F1/13 , B29C31/00 , B30B15/06 , B32B37/12 , G02F1/133 , G02F1/1333 , G02F1/1339
摘要： PROBLEM TO BE SOLVED: To provide a device for manufacturing a liquid crystal panel which can reduce an overlap deviation amount of two substrates after sticking. SOLUTION: In a device for manufacturing a liquid crystal panel, two substrates 1, 2 are opposed to each other with spacers interposed between them, are pressurized and heated in a superposed state and an addhesive which is located between the two substrates 1, 2 is cured and stuck. A graphite plate is used as at least one pressurizing plate, out of a pair of pressurizing plates 5, 6 used to pressurize the two substrates 1, 2, to give a difference of rigidity between the upper and lower pressurizing plates 5, 6.

23. 发明专利

JPH06244269A SEMICONDUCTOR MANUFACTURING APPARATUS, WAFER VACUUM CHUCK DEVICE THEREOF, AND GAS CLEANING AND NITRIDE FILM FORMATION THEREFOR 失效
公开(公告)号：JPH06244269A
公开(公告)日：1994-09-02
申请号：JP19756193
申请日：1993-08-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA YOSHIMI , KANDA TOMOYUKI , KITANO KATSUHISA , YOSHIDA KAZUO , ONISHI HIROSHI , YAMANISHI KENICHIRO , SASAKI SHIGEO , KOMORI HIDEKI , EJIMA TAIZO , TSUTAHARA KOUICHIROU , NOGUCHI TOSHIHIKO , TAKAHAMA SUSUMU , KUSAKABE YOSHIHIKO , IWAMOTO TAKESHI , KOSAKA NORIYUKI
IPC分类号： B23Q3/08 , B25B11/00 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/48 , H01L21/683 , H01L21/68
摘要： PURPOSE:To provide a vacuum chuck device which is able to fix a semiconductor wafer by suction under a reduced pressure making its wafer sucking surface face down by a method wherein wafer vacuum sucking grooves are provided in blocks to the wafer sucking surface of the device. CONSTITUTION:Wafer vacuum sucking grooves 125 are provided in blocks to the wafer sucking surface of a vacuum chuck device 101. For instance, a vacuum suction opening 104 and a vacuum suction path 105 are provided to each sucking groove 125 so as to evacuate it. By this setup, when the vacuum chuck device 101 fixes the semiconductor wafer 1 by suction under a reduced pressure making its wafer sucking surface face down, the other block grooves 125 can be prevented from deteriorating in degree of vacuum even if one of the block grooves 125 is lessened in degree of vacuum due to that dust attached to the sucking surface of the device 101 or the warpage of the semiconductor wafer 1 makes a part of the wafer sucking surface of the device 101 around the block groove 125 concerned deteriorate in airtightness. Therefore, a pressure difference can be kept large enough under a reduced pressure throughout the wafer sucking surface of the chuck device 101, so that the chuck device 101 can surely holds the semiconductor wafer 1 by suction.

24. 发明专利

JPH0513373B2 失效
公开(公告)号：JPH0513373B2
公开(公告)日：1993-02-22
申请号：JP25345284
申请日：1984-11-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOBAYASHI TOSHUKI , OOTOMO YOSHIMI , KINOSHITA YOSHIMI , ODA MASAO
IPC分类号： H01L21/205 , H01L21/263 , H01L21/31

25. 发明专利

JPH01241826A THIN FILM FORMING DEVICE 失效
公开(公告)号：JPH01241826A
公开(公告)日：1989-09-26
申请号：JP7146088
申请日：1988-03-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： ODA MASAO , KOBAYASHI TOSHIYUKI , KINOSHITA YOSHIMI
IPC分类号： C23C16/50 , C23C16/511 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To form a thin film of uniform thickness over the entire surface of a large substrate by providing injection nozzles for injecting first and second reactive gases so that the distribution of the injected reactive gas concentration are respectively uniform in one direction of the substrate and both injected gases are mixed in the vicinity of the substrate and by providing a substrate transferring mechanism for transferring the substrate in a direction substantially perpendicular to the one direction. CONSTITUTION:Silane gas 3 is supplied from a first reactive gas supplying section 2 and nitrous oxide gas 5 excited and activated by a microwave plasma discharge section 6 is supplied from a second reactive as supplying section 4 to be subjected to a chemical reaction on a substrate 8 and to thereby form an oxide film thereon. The film is formed at a uniform speed in the (A) direction, so the thin film has a uniform thickness in the (A) direction. Since the substrate is moved in the B direction, the thin film of uniform thickness also in the (B) direction can be obtained. In this way, it is possible to form a thin film of uniform thickness over the entire surface of the substrate. During the reaction, a holding stage 12 carrying thereon the substrate 8 and a heater 9 are moved in the (B) direction perpendicular to the (A) direction by a substrate transferring mechanism consisting of a ball thread 13, a motor 14, and the like to cause the substrate 8 to pass through a reaction region 16 in which the thin film forming speed is uniform in the (A) direction.

26. 发明专利

JPH01152278A THIN FILM FORMING DEVICE 失效
公开(公告)号：JPH01152278A
公开(公告)日：1989-06-14
申请号：JP31279587
申请日：1987-12-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOBAYASHI TOSHIYUKI , NISHIDA YOSHIHIDE , KINOSHITA YOSHIMI , ODA MASAO
IPC分类号： C23C16/50 , H01L21/205 , H01L21/31
摘要： PURPOSE:To form a thin film without regulating a substrate to high temp. and to reduce damage on the surface of the substrate and the thin film and to obtain the homogeneous thin film by providing a plasma device, a laser beam oscillator, a shape variable mechanism, a scanning mechanism and a driving mechanism of the substrate. CONSTITUTION:Plasma gas of reactive gas which has been allowed to pass through a plasma device 26 is fed from a feed part 27 and a gaseous raw material is fed through a feed part 25 and gaseous film formation particles are formed on the surface of a substrate 5. The width of beam 11 emitted from a laser beam oscillator 22 is spread in the YY direction shown by arrows with a beam shape variable mechanism 23 and light intensity distribution is uniformized. Further, beam 11 is scanned and irradiated in the XX direction shown by arrows by properly rocking the rotary plane mirror 24 of a beam scanning mechanism and the substrate 5 is moved in the YY direction shown by the arrows with a driving mechanism 29 of the substrate 5. The surface of the substrate 5 is given with energy transferring in a wide range by this beam 11 and activated and also the gaseous film formation particles are heated and thereby a homogeneous thin film is formed. Since plasma generated in the outside of the reaction chamber 1 is used for decomposition of gas for film formation, damage given on the surface of the substrate 5 and the thin film is reduced.

27. 发明专利

JPS6383276A PHOTOCHEMICAL VAPOR GROWTH DEVICE 失效
公开(公告)号：JPS6383276A
公开(公告)日：1988-04-13
申请号：JP22873486
申请日：1986-09-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： OTOMO YOSHIMI , ODA MASAO , KINOSHITA YOSHIMI , KOBAYASHI TOSHIYUKI
IPC分类号： H01L21/31 , C23C16/48 , H01L21/205 , H01L21/263
摘要： PURPOSE:To prevent the deposition of a shading film on a light transmitting window by heating an active gas forming a light transmitting substance by the reaction with the decomposition product of a light-excited gaseous reactant, and introducing the heated gas into the vicinity of the light transmitting window. CONSTITUTION:UV light is projected into a reaction chamber 1 through the light transmitting window 2, the gaseous reactant 8 is introduced into the reaction chamber 1 from a supply port 7 and passed over a substrate 6 heated by a heater 4, and film is grown on the substrate 6. At this time, a supply port 10 for introducing the active gas 11 (O2, N2O, etc.) is provided in the vicinity of the light transmitting window 2 in the reaction chamber 1, and the active gas 11 forming the UV light transmitting substance by the reaction with the gaseous reactant 8 is heated by a heater 12 and introduced into the vicinity of the light transmitting window 2. Besides, an inert gas supply port 14 is provided between the gaseous reactant supply port 7 and the active gas supply port 10 to introduce an inert gas 15 into the chamber, and the gaseous reactant 8 flows into the vicinity of the light transmitting window 2 to prevent the inflow of the active gas into the vicinity of the substrate 6. As a result, the decomposition of the shading film on the light transmitting window is prevented, and the throughput performance is remarkably improved.

28. 发明专利

JPS6350476A THIN FILM FORMING DEVICE 失效
公开(公告)号：JPS6350476A
公开(公告)日：1988-03-03
申请号：JP19422986
申请日：1986-08-19
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOBAYASHI TOSHIYUKI , OTOMO YOSHIMI , KINOSHITA YOSHIMI , ODA MASAO
IPC分类号： H01L21/31 , C23C16/34 , C23C16/48 , H01L21/205 , H01L21/263
摘要： PURPOSE:To stably form a film for a long time by separating a reaction chamber and a light source for photochemically decomposing a reactive gas with a light-transmissible mesh sheet and a light-transmissible film sliding and traveling on the surface of the sheet. CONSTITUTION:A vacuum vessel 11 is evacuated to a specified vacuum by a vacuum pump 14, and a reactive gas is supplied into the reaction chamber 3 from a gas header 6 and discharged through a gas header 7. The reactive gas is photochemically decomposed by a light source 1, and a thin film is formed on the surface of a substrate 8 on a holder 9 heated to a specified temp. by a heater 10. In the film forming device of the above-mentioned structure, the reaction chamber 3 and the light source 1 are separated by the partition part consisting of the light-transmissible sheet 17 and the light-transmissible partition film 16 sliding and traveling on the surface of the sheet through a driving mechanism 18. As a result, the traveling of the film 16 is not disturbed by the deposit, the transmissibity of the irradiation light is not reduced, and the deposition of a reaction product on the light source 1 is prevented.

29. 发明专利

JPS62101020A SEMICONDUCTOR MANUFACTURING EQUIPMENT 失效
公开(公告)号：JPS62101020A
公开(公告)日：1987-05-11
申请号：JP23953685
申请日：1985-10-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOBAYASHI TOSHIYUKI , OTOMO YOSHIMI , KINOSHITA YOSHIMI , ODA MASAO
IPC分类号： H01L21/205 , H01L21/263 , H01L21/31
摘要： PURPOSE:To improve the illuminance of beams on a substrate while stabilizing the illuminance by mounting a heat exchanger uniformly removing heat from a light-emitting section on a light source. CONSTITUTION:A heat exchanger is constituted of a silica glass tube 14 in a shape that covers a light source 2, a cooling fluid 17, a supply port 15 for the cooling fluid and an exhaust port 16 discharging a fluid 17a after cooling. Generated heat is taken away uniformly from a light-emitting section by the cooling fluid 17 flowing in the silica glass tube 14 in the light source 2, thus inhibiting the temperature rise of said light source 2. Accordingly, the luminous efficiency of the light source 2 does not drop, and stable high illuminance to a substrate 5 can be acquired.

30. 发明专利

JPS61108129A Semiconductor manufacturing equipment 失效
标题翻译：半导体制造设备
公开(公告)号：JPS61108129A
公开(公告)日：1986-05-26
申请号：JP23075084
申请日：1984-11-01
申请人： Mitsubishi Electric Corp
发明人： KOBAYASHI TOSHIYUKI , OTOMO YOSHIMI , KINOSHITA YOSHIMI , ODA MASAO
IPC分类号： H01L21/205 , H01L21/263
CPC分类号： C23C16/482 , C23C16/4583
摘要： PURPOSE:To form thin films with even thickness in the specified direction by a method wherein a substrate is shaken in the specified direction by means of a table moving system. CONSTITUTION:Reaction gas 4 is introduced from an inlet 7 to a reaction chamber 1 for photochemical reaction by light entering from entrance window 6 to form thin films on a substrate 5 heated by a heater 3. At this time, a movable table 19 in parallel with the flowing direction of gas 4 is shaken in the same direction to expose overall surface of substrate 5 in the same direction to the gas 4 for the same time. Through these procedures, thin films with even thickness may be formed regardless of uneven concentration distribution of the reaction gas 4.
摘要翻译：目的：通过其中通过台式移动系统在指定方向上摇动基板的方法在指定方向上形成具有均匀厚度的薄膜。构成：反应气体4从入口7引入反应室1，用于通过从入口窗6进入的光进行光化学反应，以在由加热器3加热的基底5上形成薄膜。此时，可移动台19并联随着气体4的流动方向在相同方向上摇动，以使得基板5的整个表面同时与气体4同向。通过这些方法，可以形成具有均匀厚度的薄膜，而不管反应气体4的浓度分布不均匀。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式