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1. 发明专利

JP2010258266A Tap switching device 有权
标题翻译： TAP切换装置
公开(公告)号：JP2010258266A
公开(公告)日：2010-11-11
申请号：JP2009107681
申请日：2009-04-27
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MIHARA YUJI , KINOSHITA YOSHIMI , FURUKAWA SHIGEYOSHI , YAMASHITA KUNIO
IPC分类号： H01F29/04 , H01H1/56 , H01H33/66
摘要： PROBLEM TO BE SOLVED: To provide a tap switching device that can be made compact. SOLUTION: A changeover switch 22 of the tap switching device 101 includes an output member 89 which rotates on a predetermined axis 71, a plurality of fixed contacts 63 electrically connected to different taps, respectively, a movable contact 81 which operates as the output member 89 rotates to selectively connect with the plurality of fixed contacts 63, a first vacuum valve VSR connected between a predetermined node and a current limiting resistance R, and a second vacuum valve VSM connected between the predetermined node and the movable contact 81, wherein the movable contact 81, the plurality of fixed contacts 63, the first vacuum valve VSR, and the second vacuum valve VSM are provided crossing the same plane orthogonal to the predetermined axis 71, and the movable contact 81 is provided inside the plurality of fixed contacts 63, the first vacuum valve VSR, and the second vacuum valve VSM in a radial direction centering on the predetermined axis 71. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供可以制造成小型的抽头切换装置。抽头切换装置101的切换开关22包括：在预定轴线71上旋转的输出构件89，分别与不同抽头电连接的多个固定触头63，可动触点81作为输出构件89旋转以选择性地连接多个固定触点63，连接在预定节点和限流电阻R之间的第一真空阀VSR和连接在预定节点和可动触点81之间的第二真空阀VSM，其中与可动接点81，多个固定接点63，第一真空阀VSR以及第二真空阀VSM交叉设置在与规定轴线71正交的同一平面上，可动接点81设置在多个固定接点 63，第一真空阀VSR和第二真空阀VSM沿径向以预定轴线71为中心。版权所有（C）2011，JPO＆INPI Ť

2. 发明专利

JP2001118837A SEMICONDUCTOR MANUFACTURING DEVICE 失效
公开(公告)号：JP2001118837A
公开(公告)日：2001-04-27
申请号：JP2000250266
申请日：2000-08-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA YOSHIMI , KANDA TOMOYUKI , KITANO KATSUHISA , YOSHIDA KAZUO , ONISHI HIROSHI , YAMANISHI KENICHIRO , SASAKI SHIGEO , KOMORI HIDEKI , EJIMA TAIZO , TSUTAHARA KOICHIRO , NOGUCHI TOSHIHIKO , TAKAHAMA SUSUMU , KUSAKABE YOSHIHIKO , IWAMOTO TAKESHI , KOSAKA NORIYUKI
IPC分类号： C23C16/46 , H01L21/31 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To improve the yield and quality of a semiconductor by improving the purity of a film forming material and, in addition, to prevent the occurrence of a failure, such as the corrosion of a heating source, etc., caused by a reaction gas. SOLUTION: In a semiconductor manufacturing device, a parting member 5 and low-pressure spaces 209a and 209b are provided between a reaction space 3 and a heating source chamber 215 in which a high-temperature section, such as the wafer heating source 4, etc., exists.

3. 发明专利

JPH01128483A LASER BEAM WIDTH ENLARGING MECHANISM 失效
公开(公告)号：JPH01128483A
公开(公告)日：1989-05-22
申请号：JP28797287
申请日：1987-11-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOBAYASHI TOSHIYUKI , NISHIDA YOSHIHIDE , KINOSHITA YOSHIMI , ODA MASAO
IPC分类号： G02B27/09 , H01L21/205 , H01S3/00 , H01S3/101
摘要： PURPOSE:To enlarge laser beam width at low cost and to enable distribution of light intensity relatively uniform by using a laser beam high-speed parallel traveling part for obtaining a wide laser beam and a mirror system consisting of a plane mirror. CONSTITUTION:A laser beam A1 with a beam diameter of c is reflected by a laser beam high-speed parallel traveling part 5 and becomes a wide laser beam A2, thus entering a mirror system 6. Then, it is reflected by plane mirrors 6A and 6B and a wide laser beam A3 is folded as it is accumulated on the inciding side laser beam A2 in parallel and in width direction, thus entering a mirror system 7. Then, being reflected by plane mirrors 7A and 7B, a wide laser beam A4 is folded back as it is accumulated on the laser beam A3 in parallel and in width direction, thus entering a mirror system 8. Then, being reflected by plane mirrors 8A and 8B, a wide laser beam A5 is folded back as it is accumulated on the laser beam A4 in parallel and in width direction, reaches a laser beam absorber 9, thus resulting in extinction. Therefore, by allowing a laser beam high-speed parallel traveling part 5 to perform reciprocating motion at high speed between arrows B11 and B12, a laser beam in an elliptic shape whose longer diameter is d and shorter diameter is c at the sectional area with uniform light intensity distribution can be formed.

4. 发明专利

JPS6483669A THIN FILM FORMING DEVICE 失效
公开(公告)号：JPS6483669A
公开(公告)日：1989-03-29
申请号：JP24230587
申请日：1987-09-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOBAYASHI TOSHIYUKI , NISHIDA YOSHIHIDE , KINOSHITA YOSHIMI , ODA MASAO
IPC分类号： H01L21/205 , C23C16/48 , C23C16/50 , H01L21/31
摘要： PURPOSE:To efficiently form a thin film having a uniform film thickness with good efficiency at a high film forming speed by introducing a gaseous material and gaseous plasma into a reaction chamber, then projecting a laser beam and driving a substrate at an uniform speed by driving of a driving mechanism while discharging an exhaust gas. CONSTITUTION:A substrate holding and heating member 3 which holds and heats the substrate 2 is disposed in the reaction chamber 1. On the other hand, the gaseous material such as silane is supplied from a gaseous material feed port 25 and further, the gaseous plasma obtd. by converting a reactive gas such as N2O to plasma by a plasma device 7 is introduced from a gaseous plasma feed port 28 into the chamber. The laser beam 9 generated by a laser beam oscillator 10 is introduced through a transmission window 15 for introducing the laser beam into the chamber. The above- mentioned gas for film formation is thereby cracked and the thin film of Si3N4, etc., is formed on the surface of the above-mentioned substrate 2. The gas after the film formation reaction is discharge from a discharge port 11. The above-mentioned substrate holding and heating member 3 is moved at the constant speed in an arrow C-D direction by driving of the driving mechanism 24 at this time. The distances between the feed ports 25, 28 and the discharge port 11 is, therefore, shortened and the uniformity of the flow of the gas is improved.

5. 发明专利

JPS6376320A SYSTEM FOR MANUFACTURE OF SEMICONDUCTOR 失效
公开(公告)号：JPS6376320A
公开(公告)日：1988-04-06
申请号：JP22251586
申请日：1986-09-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： ODA MASAO , KOBAYASHI TOSHIYUKI , OTOMO YOSHIMI , KINOSHITA YOSHIMI
IPC分类号： H01L21/31 , H01L21/205 , H01L21/263
摘要： PURPOSE:To eliminate the need to remove a reaction product adhering to a light- incidence window from a reaction chamber and to efficiently facilitate the removal of the reaction product by a system wherein an ultrasonic generator is installed at the light-incidence window. CONSTITUTION:If a reaction gas is introduced into a reaction chamber 1 from the direction of an arrow 4, this reaction gas is excited by a beam of light from a light source 2 and is decomposed. A reaction product produced by this process is deposited on a substrate 5, and a thin film is formed. If the reaction product adheres to a light- incidence window 6 and the transmissivity of the beam of light is-lowered, the reaction product which has adhered to the lightincidence window 6 can be removed in such a way that an ultrasonic generator 10 slightly vibrates the light-incidence window 6 at a high frequency of, e.g., higher than several kHz. Because the reaction chamber 1 is of vertical structure, the removed reactionproduct is discharged to the outside of the system through an outlet installed at the lower part of the reaction chamber 1 without contaminating the inside wall, etc. of the reaction chamber. By installing the ultrasonic generator at the light-incidence window in this manner, it is possible to efficiently remove the reaction product which adheres to the light-incidence window and to improve the processing efficiency and the throughput.

6. 发明专利

JPS6341016A PRODUCTION APPARATUS FOR SEMICONDUCTOR 失效
公开(公告)号：JPS6341016A
公开(公告)日：1988-02-22
申请号：JP18572286
申请日：1986-08-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： ODA MASAO , KOBAYASHI TOSHIYUKI , KINOSHITA YOSHIMI , OTOMO YOSHIMI , YOSHIZAWA KENJI , TAKI MASAKAZU
IPC分类号： H01L21/302 , H01L21/205 , H01L21/263 , H01L21/31
摘要： PURPOSE:To shorten a space between a substrate and a light source, and to increase optical illuminance by keeping the inside of a light source chamber under decompression in response to the degree of vacuum in a reaction chamber while using a substrate anchor block as a ground electrode and arranging a counter electrode sufficiently transmitting beams on the inside of the reaction chamber of a beam entrance window. CONSTITUTION:The inside of a device is evacuated, a discharge stop valve 18b is closed and the inside of the device is maintained under the state of decompression, thus simply removing pressure difference between a reaction chamber 1 and a light source chamber 2 on film formation extremely easily. Consequently, the plate thickness of a beam entrance window 7 can be thinned, and a light source 6 can be brought near to the substrate 5 side without lowering light transmittance by the increase of plate thickness. Accordingly, a thin-film can be shaped under the state in which optical illuminance on the substrate 5 is elevated sufficiently, thus remarkably improving the efficiency of formation of the thin-film. When a reaction product adheres on the light source chamber 2 side of the beam entrance window 7 and light transmittance lowers on film formation, the arrangement of a counter-electrode 14 and a substrate anchor block 3 as a ground electrode and etching by plasma discharge utilizing evacuation action on the inside of the light source chamber 2 are used, thus eliminating the lowering of light transmittance.

7. 发明专利

JPS61108126A Semiconductor manufacturing equipment 失效
标题翻译：半导体制造设备
公开(公告)号：JPS61108126A
公开(公告)日：1986-05-26
申请号：JP23074784
申请日：1984-11-01
申请人： Mitsubishi Electric Corp
发明人： KOBAYASHI TOSHIYUKI , OTOMO YOSHIMI , KINOSHITA YOSHIMI , ODA MASAO
IPC分类号： H01L21/205 , H01L21/263
CPC分类号： C23C16/482
摘要： PURPOSE:To accelerate the forming speed of thin films by means of arranging a light source for photochemical reaction in a reaction chamber. CONSTITUTION:An ultraviolet ray lamp 22 as a light source is arranged in a reaction chamber 1 sealing the tube end of lamp 22 with the wall of chamber 1. In such a constitution, the lamp 22 may get close to a substrate 5 resultantly augmenting the intensity of irradiating substrate 5 to accelerated the forming speed of thin films.
摘要翻译：目的：通过在反应室中设置光化学反应的光源来加速薄膜的成型速度。构成：将作为光源的紫外线灯22配置在将灯22的管端与室1的壁密封的反应室1内。在这样的结构中，灯22可能接近基板5，从而增加了照射基板5的强度，以加速薄膜的成形速度。

8. 发明专利

JPS61108124A Semiconductor manufacturing equipment 失效
标题翻译：半导体制造设备
公开(公告)号：JPS61108124A
公开(公告)日：1986-05-26
申请号：JP23074584
申请日：1984-11-01
申请人： Mitsubishi Electric Corp
发明人： KOBAYASHI TOSHIYUKI , OTOMO YOSHIMI , KINOSHITA YOSHIMI , ODA MASAO
IPC分类号： H01L21/205 , H01L21/263
CPC分类号： H01L21/6719 , C23C16/4583 , C23C16/482 , H01L21/67115
摘要： PURPOSE:To augment and equalize the intensity of illumination by a method wherein, when reaction gas contained in a reaction chamber is irradiated with light making photochemical initiation to deposit thin films on a substrate arranged in the reaction gas, linear lamp groups are respectively arranged outside the slopes of almost isoceles triangular section of the reaction chamber while the reaction gas is supplied from the top of the chamber. CONSTITUTION:A reaction chamber 11 containing a substrate 5 to deposit thin films is composed of almost isoceles triangular while light entrance windows 6 made of light transmitting material are provided on the two slopes to arrange respective linear lamp groups 12 outside the slopes. Besides, an inlet 7 with a nozzle 17 for supplying reaction gas 4 is provided on the top of reaction chamber 11 while an opposing outlet 8 is formed on the bottom surface. On the other hand, a movable table 19 with a heater 3 built-in is provided on the bottom surface to mount a substrate 5 on the table 19 to be slided by means of a connector 19a and a ball screw 23 etc. In such a constitution, the distances between the peripheral parts and central part of substrate 5 and the lamp groups may be differentiated from one another to form thin films with even film thickness.
摘要翻译：目的：通过一种方法来增强和均衡照明强度，其中当反应室中包含的反应气体被照射光化学引发以在布置在反应气体中的基板上沉积薄膜时，线性灯组分别布置在外部反应室的大致等角三角形部分的斜面，同时从室的顶部供应反应气体。构成：包含用于沉积薄膜的基板5的反应室11由几乎等角三角形组成，而在两个斜面上设置由透光材料制成的光入口窗6，以将各个线性灯组12布置在斜坡外。此外，在反应室11的顶部设置有用于供给反应气体的喷嘴17的入口7，同时在底面形成有相对的出口8。另一方面，内置加热器3的可移动台19设置在底面上，以便通过连接器19a和滚珠丝杠23等将基板5安装在桌子19上以被滑动。在这种外围部分和基板5的中心部分与灯组之间的距离可以彼此不同以形成具有均匀膜厚度的薄膜。

9. 发明专利

JP2002134427A SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开
公开(公告)号：JP2002134427A
公开(公告)日：2002-05-10
申请号：JP2001268873
申请日：2001-09-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： KITANO KATSUHISA , KINOSHITA YOSHIMI , YOSHIDA KAZUO , KANDA TOMOYUKI , TAKAHAMA TORU , YAMANISHI KENICHIRO , ONISHI HIROSHI , KUSAKABE YOSHIHIKO , TSUTAHARA KOICHIRO , KAWADA YOSHINOBU
IPC分类号： C23C16/44 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To avoid depositing extra deposits by controlling the temperature of a gate valve. SOLUTION: The semiconductor manufacturing apparatus has a reaction chamber 4, a wafer heat source disposed in this chamber, a wafer holder positioned on the wafer heat source for holding a wafer, a reactive gas feeder housed in the reaction chamber for feeding a reactive gas to the wafer, and a pre-chamber 114 having a gate valve 115, this chamber is connected to the reaction chamber via a communicating tube (outer square pipe 118), and a gate shutter 100 is provided at the reaction chamber in the communicating tube for sectioning the reaction chamber from the gate valve to shut off the heat.

10. 发明专利

JP2001202063A DEVICE AND METHOD FOR ADJUSTING PICTURE QUALITY OF LIQUID CRYSTAL DISPLAY 失效
公开(公告)号：JP2001202063A
公开(公告)日：2001-07-27
申请号：JP2000008669
申请日：2000-01-18
申请人： ADVANCED DISPLAY KK , MITSUBISHI ELECTRIC CORP
发明人： NAKANISHI KUNIFUMI , NISHIZAKI SHUJI , MIYAOKA AKITOSHI , KINOSHITA YOSHIMI , IKUTA YOSHIKAZU
IPC分类号： G01M11/00 , G01R31/00 , G02F1/133 , G09G3/20 , G09G3/36
摘要： PROBLEM TO BE SOLVED: To solve the problem that the value of a potential applied to a counter electrode has variance owing to an artificial factor since a flicker is adjusted visually by an operator through a conventional picture quality adjusting device for a liquid crystal display. SOLUTION: At a specific position of the liquid crystal panel 1, an optical sensor 17 is arranged opposite the liquid crystal panel 1 and the waveform outputted by the optical sensor 17 is observed on an oscilloscope 21 while synchronized with the vertical synchronizing signal in odd-frame or even-frame cycles. For the purpose, the waveform when the potential applied to the counter electrode of the liquid crystal display is shifted to the side higher than an optimum side first and the waveform when the counter potential is shifted to the side lower than the optimum potential are previously found, and the Vcom potential of the object liquid crystal display to be adjusted is so adjusted that the phase of the observed waveform on the object liquid crystal display is between the phases of the two previously found waveforms.

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