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21. 发明专利

JP2002198424A SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
公开(公告)号：JP2002198424A
公开(公告)日：2002-07-12
申请号：JP2000398252
申请日：2000-12-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHII ATSUSHI
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768 , H01L21/822 , H01L23/52 , H01L23/522 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which has a wiring structure using a dual damascene process and which has a capacitor that can be easily modified in design and also in capacitance. SOLUTION: A lower electrode 18b of a capacitor is formed simultaneously with a first Cu wiring layer 18a using a first Cu film 18. An opening 20b for formation of an upper electrode 24b of the capacitor is made in an interlayer insulating film 19 simultaneously with a via hole 20a, a silicon nitride film 19a as the lowermost layer film of the interlayer insulating film 19 is left on the bottom of the opening to be used for a dielectric film 25 of the capacitor. The upper electrode 24b is formed simultaneously with a second Cu wiring layer 24a using a second Cu film 24 of a dual damascene wiring. In this manner, the capacitor is simultaneously formed in a wiring step using the dual damascene process.

22. 发明专利

JPH08235098A DISTRIBUTED APPLICATION COMMUINICATION SYSTEM 失效
公开(公告)号：JPH08235098A
公开(公告)日：1996-09-13
申请号：JP3370395
申请日：1995-02-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIMURA REIKO , SUGANO MIKITO , MORIYAMA REIKO , ISHII ATSUSHI
IPC分类号： G06F13/00 , G06F9/46 , G06F9/54
摘要： PURPOSE: To facilitate the development of respective programs of a client and a server by preparing a transaction form file by the client and the server and automatically performing a type conversion of transaction data CONSTITUTION: The transaction form for every client application 3 is prepared by a transaction form preparation tool 2 and the forms are registered as first and second files on the side of a client 1 and the side of a server 6, respectively. A client communication object 4 refers to the first file at the time of a transaction, generates data in the transaction form according to a client application 3 and transmits the data to the server 6. When the server 6 performs a designated processing, a server communication object 9 refers to the second file, generates returned transaction data and transmits the data to the client 1. The client communication object 4 refers to the first file 1 again and reproduces the received transaction data in a prescribed form.

23. 发明专利

JPH07283307A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH07283307A
公开(公告)日：1995-10-27
申请号：JP7724894
申请日：1994-04-15
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHII ATSUSHI
IPC分类号： H01L23/522 , H01L21/768
摘要： PURPOSE:To improve the reliability of the connecting structure between a plug and wiring section formed on the plug. CONSTITUTION:A semiconductor device is provided with a lower-layer wiring 1, interlayer insulating film 2 which is formed on the wiring 1 and has a contact hole 3 positioned on the wiring 1, contact layer 7 formed on the internal, surface of the hole 3, plug 8 which is formed to fill up the hole 3 with the contact layer 7 in between and has an upper surface which becomes higher as going toward the periphery of the hole 3 from the center of the hole 3, and upper-layer wiring 9 which is formed to cover the plug 8.

24. 发明专利

JPH0574963A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0574963A
公开(公告)日：1993-03-26
申请号：JP24567391
申请日：1991-09-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： ADACHI HIROSHI , ADACHI ETSUSHI , MINAMI SHINTAROU , KOTANI HIDEO , HAYASHIDE YOSHIO , TSUTSUMI TOSHIAKI , MATSUURA MASAZUMI , ISHII ATSUSHI
IPC分类号： H01L21/285 , H01L21/28 , H01L21/312 , H01L21/768 , H01L23/522 , H01L23/532
摘要： PURPOSE:To obtain substantially uniform insulating film between wiring layers by substantially equalizing heights of protrusions corresponding to patterns of first wiring formed on an insulating film, and employing an insulating film having a groove wider than that of the groove of the pattern of the first wiring. CONSTITUTION:An insulating film is buried in a height higher than an Al pattern 1 between the Al patterns 1 to become first wiring, heights of protrusions to be formed corresponding to the patterns 1 are substantially equalized, an insulating film, in which a groove interposed to be held between the protrusions is wider than the interval between the patterns 1, is formed as a first layer insulating film 3, and a second layer insulating film 4 is continuously formed of an insulating film having high fluidity. Thus, the film 4 is easily introduced into the groove interposed to be held between the protrusions of the film 3, and formed in a shape accumulated between the protrusions. Thus, a substantially uniform insulting film between wiring layers can be formed.

25. 发明专利

JPH03224229A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03224229A
公开(公告)日：1991-10-03
申请号：JP18012190
申请日：1990-07-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAGUCHI SUMIO , NAKAO SHUJI , TAKADA YOSHIFUMI , ISHII ATSUSHI
IPC分类号： H01L21/3205
摘要： PURPOSE:To make it possible to form a connection hole in such a way that an angular part is not formed by a method wherein a well-shaped groove part is formed in an insulating layer by anisotropic etching and after that, the upper part of the insulating layer is removed by an entire surface etching and the connection hole is formed. CONSTITUTION:A first silicon oxide film 1 which is an insulating film, an Al wiring 2 are formed on a semiconductor substrate 10 and thereafter, a second silicon oxide film 30 is deposited so as to cover the film 1 and the wiring 2. Then, a resist 4 is applied on the whole surface of the film 30, a patterning is performed, a window part W is formed in the upper part of the wiring 2 and after that, part of the upper part of the film 30 is removed by anisotropic etching by a depth t3. Then, the film 30 is etched by anisotropic etching by a depth t4, a well-shaped groove part G having a width identical with that of the window part W is formed and after that, the resist 4 is removed. Then, when the upper part of the film 30 is removed by an entire surface etching, a connection hole H is opened. In this case, as an angular part is easily eroded by the entire surface etching, the connection hole H hating not the square-shaped part in its side part can be formed.

26. 发明专利

JPH05334030A 失效
公开(公告)号：JPH05334030A
公开(公告)日：1993-12-17
申请号：JP14433492
申请日：1992-06-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHII ATSUSHI
IPC分类号： G06F3/14 , G06F3/048 , G06T11/00 , G06F15/72
摘要： PURPOSE:To shorten the response time to display in the data display system where data is displayed while scrolling the data in a window provided with a scroll bar. CONSTITUTION:In a conventional method, the position of a scroll box 14 on the scroll bar is calculated after all data are prepared. In this devised method, data is displayed in a window 10 when a certain number of data are prepared, and approximate relative positions of these data displayed in the window 10 to all data are displayed by the scroll box 14. The position of the scroll box 14 is calculated based on (the number of extracted data from which the length of the scroll bar 12) +alpha, is denoted.

27. 发明专利

JPH05102315A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH05102315A
公开(公告)日：1993-04-23
申请号：JP25645291
申请日：1991-10-03
申请人： MITSUBISHI ELECTRIC CORP
发明人： HAYASHIDE YOSHIO , ISHII ATSUSHI , ADACHI HIROSHI , ADACHI ETSUSHI
IPC分类号： H01L21/28 , H01L21/285 , H01L21/768
摘要： PURPOSE:To enhance the selective ratio of an organic-resin cured film and to make the formation speed of a buried film fast by a method wherein the organic-resin cured film is used when a buried plug is formed in a contact hole by a selective CVD method. CONSTITUTION:A first wiring layer 5 is connected to an impurity diffusion layer 2 formed in an interlayer insulating layer which is composed of a first interlayer insulating film 3 cured by a silicon oxide film and of a silicon ladder polymer film formed on it. The circumference of a first plug 4 is covered with a silicon oxide film 21. At this time, tungsten which is formed by using a low- pressure thermal CVD method or the like is used for the first plug 4. Thereby, the selectivity of the interlayer insulating film can be enhanced sharply as compared with a case where the interlayer insulating film is formed of only a silicon oxide film or nitride film. In addition, it is possible to use the formation condition of a fast film growth speed which could not be used in conventional cases because its selectivity is deteriorated. As a result, the time of a plug formation operation can be shortened.

28. 发明专利

JPH04216629A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04216629A
公开(公告)日：1992-08-06
申请号：JP41145390
申请日：1990-12-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHII ATSUSHI
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522
摘要： PURPOSE:To prevent a cavity and a crack, which are generated in an insulating film 4 between wirings, from being generated without making thin the film thickness of the film 4 in a semiconductor device, in which each layer has a wiring structure, and to improve the reliability of the device. CONSTITUTION:An upper metal film 2c of a metal film 2 constituting each wiring film is subjected to overetching and the width of the film 2c is made narrower than those of a main metal film 2b and a lower metal film 2a of the film 2. The ratio of the interval at the smallest part among the intervals between wirings to a film thickness, that is, an effective aspect ratio becomes small and a process margin for a crack and a cavity, which are generated in an insulating film 4 between the wirings, can be enlarged.

29. 发明专利

JP2013120534A Related word classification device, computer program, and method for classifying related word 审中-公开
标题翻译：相关词分类设备，计算机程序和分类相关词的方法
公开(公告)号：JP2013120534A
公开(公告)日：2013-06-17
申请号：JP2011269000
申请日：2011-12-08
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TANIGAKI KOICHI , SHIBA MITSUTERU , ISHII ATSUSHI , TAKAYAMA SHIGENOBU
IPC分类号： G06F17/30
摘要： PROBLEM TO BE SOLVED: To extract related words while discriminating words used properly according to different purposes, even when the words subject to be classified are structured data such as database definitions.SOLUTION: A word classification unit 60 optimizes a model parameter for discriminating a class of a word on the basis of a provisional correct answer class allocated to the word appearing in data. The word classification unit 60 selects a maximum likelihood class in classes satisfying a restriction relating to the class allocation on the basis of a likelihood of the class obtained by using a current model parameter, and allocates it to the word as a new provisional correct answer class. The word classification unit 60, after alternately and iteratively processing the two steps, extracts words classified in the same class as the related words.
摘要翻译：要解决的问题：为了在根据不同目的识别正确使用的字词时提取相关词，即使被分类的单词是数据库定义等结构化数据。解决方案：词分类单元60根据分配给数据中出现的单词的临时正确答案类，优化用于区分单词类的模型参数。单词分类单元60基于通过使用当前模型参数获得的类的可能性来选择满足与类别分配有关的限制的类中的最大似然类，并将其分配给该单词作为新的临时正确答案类。单词分类单元60在交替地并且迭代地处理这两个步骤之后，提取与相关单词相同类别分类的单词。版权所有（C）2013，JPO＆INPIT

30. 发明专利

JP2012234462A Data management device and data management method and program 审中-公开
标题翻译：数据管理设备和数据管理方法与程序
公开(公告)号：JP2012234462A
公开(公告)日：2012-11-29
申请号：JP2011104124
申请日：2011-05-09
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： ISHII ATSUSHI
IPC分类号： G06F12/00
摘要： PROBLEM TO BE SOLVED: To enable acquisition of past data in a state in which data consistency is achieved among a plurality of databases.SOLUTION: A transaction monitoring part 101 monitors a processing state of a transaction and records the time when consistency is achieved between databases, in a DB quiesce point storage part 105. Update in real time is performed only on a primary DB, and an update log of the primary DB is accumulated in an update log accumulation part 106. Update of a secondary DB is performed in order of elapse of a certain period for logs accumulated in the update log accumulation part 106 so as to delay the update of the secondary DB. When past data is requested to be acquired, update processing of the secondary DB is stopped and an update log at the time closest to the request time and recorded in the DB quiesce point storage part 105 is acquired from the update log accumulation part 106 to create past data from data of the secondary DB and the update log acquired from the update log accumulation part 106.
摘要翻译：要解决的问题：能够在多个数据库之间实现数据一致性的状态下获取过去的数据。解决方案：事务监视部分101监视事务的处理状态，并且记录在DB静默点存储部分105中的数据库之间实现一致性的时间。实时更新仅在主DB上执行，并且主DB的更新日志被累积在更新日志累积部分106中。辅助DB的更新以积累在更新日志累积部分106中的日志的一定时间段的顺序执行，以便延迟更新辅助DB。当请求获取过去的数据时，停止辅助DB的更新处理，并且从更新日志累积部分106获取记录在DB停顿点存储部分105中的最接近请求时间的时间的更新日志以创建从次级DB的数据和从更新日志累积部分106获取的更新日志的过去数据。（C）2013，JPO和INPIT

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