专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2001358215A SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2001358215A
公开(公告)日：2001-12-26
申请号：JP2000180949
申请日：2000-06-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHII ATSUSHI
IPC分类号： H01L23/522 , H01L21/3205 , H01L21/60 , H01L21/768 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the same capable of suppressing a CD shift even in a large wiring groove having a wiring width of 0.5 μm or more and obtaining a good contact of the wiring with a hole in a single Damascene process. SOLUTION: In the formation of the wiring groove 9, an insulating film wall of a length of six diameters or more of the hole 6 is provided parallel to the wall of the groove 9 at a desired part in the groove 9, and hence a wiring width only on the hole 6 is divided to a desired size and formed.

2. 发明专利

JPH09297686A DATA MINING DEVICE 失效
公开(公告)号：JPH09297686A
公开(公告)日：1997-11-18
申请号：JP11254496
申请日：1996-05-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： YASUDA SATOSHI , ISHII ATSUSHI , WADA NOBUYOSHI
IPC分类号： G06F9/44 , G06F17/30 , G06F19/00 , G06N5/04
摘要： PROBLEM TO BE SOLVED: To prevent rejection of a valuable correlation rule despite the support value set at a low level by checking the probability where a hypothetical correlation rule generated from a generated correlation rule and a job knowledge base is generated from the data stored in a data base and adopting the hypothetical correlation rule as a complementary correlation rule. SOLUTION: A correlation rule generation means 12 generates a correlation rule 15 from a data base 11, and a hypothetical correlation rule generation means 16 generates a hypothetical correlation rule 17 based on the rule 15 outputted from the means 12 and a job knowledge base 14, i.e., a set of effective rules which are previously given. Then a hypothetical correlation rule verification means 18 calculates the certainty of every hypothetical correlation rule included in the rule 17 and compares the certainty with the reference that is given as the choice reference information 13. If the certainty is higher than the reference of the information 13, the rule 17 is adopted as a correlation rule. On the other hand, the rule 17 is outputted as a complementary correlation rule 19 if the certainty is lower than the reference of the information 13.

3. 发明专利

JPH0529476A WIRING CONNECTION STRUCTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0529476A
公开(公告)日：1993-02-05
申请号：JP29129691
申请日：1991-11-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHII ATSUSHI , TAKADA YOSHIFUMI , OSAKI AKIHIKO , MAEKAWA KAZUYOSHI
IPC分类号： H01L23/522 , H01L21/768 , H01L23/532
摘要： PURPOSE:To form a through hole of a desired dimension and to reliably make a contact in the through hole by a method wherein aluminium wiring films are electrically connected to each other through the through hole formed in a silicon oxide film. CONSTITUTION:An aluminium wiring film 49 is formed into a laminated structure consisting of an aluminium alloy film 33, a tungsten film 58 and a titanium nitride film 35. A silicon oxide film 51 and a copper-containing aluminium wiring film 61 are formed on the film 49. The film 49 and the film 61 are electrically connected to each other through a through hole 55. As the reflectivity of light of the film 35 is small, the area to be exposed of a resist can be formed into a prescribed area even if a photolithography technique is applied on a step part 30. As a result, even if the hole 55 is formed on the step part 30, it becomes possible to form the hole 55 of desired dimensions.

4. 发明专利

JPH0456151A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0456151A
公开(公告)日：1992-02-24
申请号：JP16365390
申请日：1990-06-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHII ATSUSHI
IPC分类号： H01L21/3213 , H01L21/3205 , H01L21/768
摘要： PURPOSE:To prevent generation of residual resist when a contact hole is opened in an insulating film on a second wiring film by protecting a wiring film when the hole is opened in the insulating film by a conductive film. CONSTITUTION:A thin metal film 6 is selectively formed by using catalytic actions of second wiring films 5a, 5b, which are covered therewith. Then, a third insulating film 7 made of a multilayer film of a silicon oxide film is formed, the film 7 is partly selectively removed to open contact holes 8a, 8b. In this case, the film 6 as a protective film is desirably a material which has large etching selection ratio to the multilayer film of a silicon oxide film for forming the film 7 and high volatility of reactive product with etching gas by RIE. Thus, the wiring film is protected against an overetching at the time of opening the hole to prevent generation of residual resist and to improve yield and reliability.

5. 发明专利

JPH03219635A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03219635A
公开(公告)日：1991-09-27
申请号：JP1560990
申请日：1990-01-24
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHII ATSUSHI
IPC分类号： H01L21/3205
摘要： PURPOSE:To prevent the electromigration-resistant property from being deteriorated by the insufficiency of a flattening operation by a method wherein an insulating film is arranged in the center of an opening region in a contact part and the external shape size of a substratum exposed part in the opening region is adjusted. CONSTITUTION:A silicon oxide film is formed on the whole surface of a first interconnection film 3. In succession, an SOG solution is applied; it is baked to form an insulating film. After that, a silicon oxide film is formed on the whole surface; it is used as a second insulating film 4. After that, a resist is applied; an exposure operation is executed via a prescribed mask; a developing operation is executed; a resist pattern is formed. The silicon oxide film is removed selectively by making use of the resist pattern as a mask; the first interconnection film 3 is exposed; a prescribed pattern is formed; after that, the resist pattern is removed; a contact part 8 is opened. The contact part 8 is provided with an insulating film 7 in the central part; an exposed region of the first interconnection film 3 is situated so as to surround it. Then, a second interconnection film 5 is formed on the second interconnection film 4 which has formed the contact part 8; in addition, a third insulating film 6 and a third interconnection film 9 are formed sequentially on the second interconnection film 5.

6. 发明专利

JP2009078764A Information processing apparatus, information processing method and program 有权
标题翻译：信息处理设备，信息处理方法和程序
公开(公告)号：JP2009078764A
公开(公告)日：2009-04-16
申请号：JP2007250994
申请日：2007-09-27
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FUJINO TOMOYA , ISHII ATSUSHI , FUKUDA SHIRO , KITAGUCHI SHINYA
IPC分类号： B61L27/00 , B61L25/04
摘要： PROBLEM TO BE SOLVED: To provide a vehicular dynamic control technology with high precision at low cost.
SOLUTION: A vehicular dynamic information reception unit 1 periodically receives the vehicular dynamic value from a railroad vehicle 200. A small section determination unit 13 determines whether or not the vehicular dynamic value is observed in any one of small sections divided from a section on a route. A small section buffer 2 stores the vehicular dynamic value in association with the small section determined by the small section determination unit 13. A value totaling unit 3 totals a plurality of vehicular dynamic values accumulated in the small section buffer 2 for the same small section. A value supplement unit 4 calculates the supplement value when any vehicular dynamic value is not accumulated in the small section buffer 2. A section buffer 5 stores the totaled value and the supplement value in association with the section. A characteristic evaluation value calculation unit 8 calculates the characteristic evaluation value for evaluating whether or not the characteristic of the stored value of the section buffer 5 follows the past characteristic. An attribution probability calculation unit 9 calculates the attribution probability indicating the probability that the characteristic evaluation value is normal. A specificity determination unit 10 compares the attribution probability with the threshold, and emits an alarm when the attribution probability is equal to or less than the threshold.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：以低成本提供高精度的车辆动态控制技术。解决方案：车辆动态信息接收单元1周期性地从铁路车辆200接收车辆动态值。小段确定单元13确定在从区间划分的小部分中的任何一个中是否观察到车辆动态值在途中小段缓冲器2与由小部分确定单元13确定的小部分相关联地存储车辆动态值。总计值单元3对于相同的小部分总计存储在小段缓冲器2中的多个车辆动态值。当在小区段缓冲器2中没有积累车辆动态值时，值补充单元4计算补充值。区间缓冲器5与该段相关联地存储合计值和补充值。特征评估值计算单元8计算用于评估区段缓冲器5的存储值的特性是否遵循过去特性的特性评估值。属性概率计算单元9计算表示特征评估值正常的概率的归属概率。特征确定单元10将归因概率与阈值进行比较，并且当属性概率等于或小于阈值时发出警报。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2006259800A Data acquisition device 审中-公开
标题翻译：数据采集设备
公开(公告)号：JP2006259800A
公开(公告)日：2006-09-28
申请号：JP2005072326
申请日：2005-03-15
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： ISHII ATSUSHI
IPC分类号： G06K17/00 , G06Q10/00 , G06Q30/02 , G06Q30/06 , G06Q50/00 , G06Q50/10 , G07G1/00
摘要： PROBLEM TO BE SOLVED: To acquire data of what type of commodity has been picked up and returned even when a customer does not purchase a commodity. SOLUTION: The data acquisition device is provided with a human detecting sensor detecting that a person has approached a commodity, a data reading means for reading data specifying the commodity in a predetermined area at timing of detecting the person by the man detecting sensor, a data storing table storing the data read by the data reading means, a data comparison means for comparing the data stored in the data storing table with data newly read by the data reading means, and a commodity state storing means for storing a state of the commodity on the basis of a comparison result by data comparison means. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：即使在客户没有购买商品的情况下，也可以获取哪种类型的商品已经被拿起并返回的数据。解决方案：数据采集装置设置有检测到人已经接近商品的人体检测传感器，用于在人检测传感器检测到人的定时检测在预定区域中指定商品的数据的数据读取装置存储由数据读取装置读取的数据的数据存储表，将存储在数据存储表中的数据与由数据读取装置重新读取的数据进行比较的数据比较装置，以及用于存储数据存储表的状态的商品状态存储装置，在商品的基础上通过数据比较的结果进行比较。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2002329779A SEMICONDUCTOR DEVICE AND ITS FABRICATION METHOD 失效
公开(公告)号：JP2002329779A
公开(公告)日：2002-11-15
申请号：JP2001130459
申请日：2001-04-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHII ATSUSHI
IPC分类号： G03F7/11 , H01L21/027 , H01L21/28 , H01L21/318 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device and its fabrication method by which halation is suppressed and an interconnection layer is formed high-precise when a resist pattern for an interconnection trench is formed in dual damascene process of via first method. SOLUTION: An interlayer insulation film 115 is formed on a substrate 1. An integrated layer of SiON film and SiO film is formed as a reflection prevention film 114 on the inter layer insulation film 115. A via 116 is formed by etching both the reflection film 114 and the interlayer film 115. A resist plug 118 is so formed on the surface of the via 116 that the surface of the plug 118 is lower than the depth of an interconnection trench 120 to be formed later. An interconnection trench 120 is formed using the resist pattern for the interconnection trench as a mask.

9. 发明专利

JPH08107087A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH08107087A
公开(公告)日：1996-04-23
申请号：JP24298194
申请日：1994-10-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： OSAKI AKIHIKO , YAMAGUCHI SUMIO , ISHII ATSUSHI , MAEKAWA KAZUYOSHI , FUJISAWA MASAHIKO
IPC分类号： H01L21/28 , C23C14/06 , C23C14/18 , C23C14/58 , H01L21/203 , H01L21/205 , H01L21/285 , H01L21/768 , H01L23/485 , H01L23/522 , H01L23/532
摘要： PURPOSE: To manufacture a barrier layer between a first conductor and a second conductor in a short time at low costs. CONSTITUTION: A first titanium layer 5 is formed by sputtering titanium on a layer insulating layer 3 and a contact layer 2a in the atmosphere of argon gas by using a collimation sputtering device, a titanium nitride layer 6 is formed by applying the reactive sputtering of titanium to the first titanium layer 5 in the atmosphere of nitric property and a second titanium layer is formed by sputtering titanium on the titanium nitride layer 6 in the atmosphere of argon gas, sequentially. After that, heat treatment is performed in the atmosphere of nitric property, the contact part between the first titanium layer 5 and the contact region 2a is made into a titanium silicide layer 7 and the second titaniu layer is made into thermal titanium nitride layer. A tungsten layer is formed in the surface of the thermal titanium nitride layer and a tungsten plug 9 is formed in the contact region 2a by etching back An aluminum layer is formed in the surfaces of exposed thermal titanium nitride layer and the plug 9 and a wiring part 10 is formed by etching.

10. 发明专利

JPH06291193A SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JPH06291193A
公开(公告)日：1994-10-18
申请号：JP7683493
申请日：1993-04-02
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHII ATSUSHI
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/522 , H01L21/90
摘要： PURPOSE:To prevent a residue from adhering to the inside of a connection hole, which is caused by an overetching or spattering effect when the connection holes with different depths are manufactured. CONSTITUTION:An insulating layer 30 has a first insulating film 21 in such a way that the insulating film 21 covers a first wiring film 6 on a semiconductor device, a second insulating film 22 containing at least a carbon component, formed in a coating and baking step and having an etching rate faster than that of the first insulating film 21, and a third insulating film 23 having an etching rate faster than that of the first insulating film 21 and formed on the second insulating film 22. Moreover, the insulating layer 30 includes an etching mask 24 having an etching rate slower than those of the first insulating film 21 and a resist material formed on the third insulating film 23, and a connection hole 25 that is formed in the etching mask 24 through the insulating films 21 to 24 and reaches the upper part of the first wiring film 6.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式