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21. 发明专利

JPH02130923A PLASMA REACTION EQUIPMENT 失效
公开(公告)号：JPH02130923A
公开(公告)日：1990-05-18
申请号：JP28388288
申请日：1988-11-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJIWARA NOBUO
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To maintain high density plasma, and improve uniformity by a method wherein minimum magnetic field is formed by superposing multipole cusped magnetic field and mirror magnetic field. CONSTITUTION:Permanent magnets 10 to form multipole cusp magnetic field, and solenoids 12 to form mirror magnetic field are installed on the peripheral part of a plasma generating chamber. An exhaust vent 7 is installed at the bottom part of the reaction chamber 1. An iron core 11 constitutes a magnetic circuit retaining and connecting each of the permanent magnets 10. Multipole cusp magnetic field by four pairs of the permanent magnets 10 and mirror magnetic field by two solenoids 12 are synthesized to form minimum magnetic field. Plasma is generated in a region along magnetic line of force, and diffuses toward the central part of the plasma generating chamber 2 where the magnetic force becomes minimum. Thereby, the inside of the chamber 2 is filled with plasma of uniform density.

22. 发明专利

JPH01157530A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH01157530A
公开(公告)日：1989-06-20
申请号：JP31781187
申请日：1987-12-14
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJIWARA NOBUO
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/316
摘要： PURPOSE:To simplify a manufacturing process by eliminating a resist process, to restrain a defect from being produced and to improve dimensional accuracy by a method wherein an oxide pattern is formed directly on a film to be processed by means of optical beam-induced direct oxidation and an reactive ion etching operation is executed by making use of the oxide pattern as an etching mask. CONSTITUTION:While a substrate 1 as a substratum layer where a silicon film 2 to be processed and to be used as a pattern formation layer has been formed on the surface is kept at a comparatively low temperature, oxygen is introduced as an oxidizing gas. Then, a photomask made of glass where a desired pattern has been formed is aligned and is arranged on the film 2 to be processed; the film 2 to be processed is irradiated with a short-wavelength Kr F excimer laser 4 from above via the mask; the pattern of the photomask is projected on the film 2 to be processed. By this setup, a surface part of the irradiated film 2 to be processed is oxidized directly due to excitation and a local temperature rise. A reactive ion etching operation using a chlorine-based gas is executed by making use of this oxide film 3 as an ion etching mask. By this setup, a desired microscopic pattern is formed.

23. 发明专利

JPH01130532A ETCHING APPARATUS 失效
公开(公告)号：JPH01130532A
公开(公告)日：1989-05-23
申请号：JP29133087
申请日：1987-11-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： SHIBANO TERUO , OGAWA TOSHIAKI , MORITA HIROYUKI , NISHIOKA KYUSAKU , FUJIWARA NOBUO
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To completely confine magnetic field produced within a discharge chamber for improving etching rate, by forming all or a part of the walls constituting the discharge chamber of a superconducting material. CONSTITUTION:Principal walls of a discharge chamber 1, a high-frequency applying electrode 9 and a grounding electrode 10 are formed of a superconducting material, and magnetic coils 6 are provided within the chamber 1. Inside of the chamber 1 is evacuated and a gas used for etching is introduced into the chamber. High-frequency power is applied to the electrode 9 to cause it to discharge. Lines of magnetic force 7 generated by the coils 6 impinge upon the walls 8 but do not pass through the walls. The lines of magnetic force 7 are thus reflected by the walls and magnetic field is created within the chamber 1. Accordingly, electrons within the chamber 1 are confined within the chamber 1 almost completely, and efficiency of discharge is maximized thereby. In this manner, a very high etching rate can be realized.

24. 发明专利

JPH01130531A PLASMA TREATMENT APPARATUS 失效
公开(公告)号：JPH01130531A
公开(公告)日：1989-05-23
申请号：JP29132987
申请日：1987-11-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： OGAWA TOSHIAKI , SHIBANO TERUO , MORITA HIROYUKI , NISHIOKA KYUSAKU , FUJIWARA NOBUO
IPC分类号： H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To enable an auto-bias voltage to be fixed stably and also to be varied as desired, by providing a magnetic field generating mechanism for generating lines of magnetic force in the direction orthogonal to the direction of electric field applied to a cathode. CONSTITUTION:A cathode 2 and an anode 1 opposing thereto are arranged within a vacuum vessel 3 having a gas inlet port 4. An object to be treated 5 is disposed on the cathode 2, which is connected to a high-frequency power supply 6. Electromagnets 9 are provided on the outside of the vessel 3 so that the electromagnets 9 produce lines of magnetic force in the direction orthogonal to electric field produced by the power supply 6. Intenslty of the magnetic field is varied if coil current in the magnets a is varied and, thereby, an self bias voltage generated on the surface of the cathode 2 is varied. This bias voltage is measured and the measured voltage is fed back to the coil, so that the voltage can be controlled at a desired value. In this manner, the self-bias voltage can be fixed stably while it also can be varied as desired.

25. 发明专利

JPS63136629A REACTIVE ION ETCHING DEVICE 失效
公开(公告)号：JPS63136629A
公开(公告)日：1988-06-08
申请号：JP28404086
申请日：1986-11-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJIWARA NOBUO
IPC分类号： H01L21/302 , H01L21/027 , H01L21/30 , H01L21/3065
摘要： PURPOSE:To shorten an etching time by placing a cathode electrode through a supporting frame and etching a workpiece. CONSTITUTION:A spacer (working unit) 6 is made of a conductive substance or a substance having 1 or more of dielectric constant, and disposed on a cathode electrode 1 near an X-ray exposure mask (workpiece) 5. Accordingly, ions which pass an ion sheath obtain sufficient energy to be introduced perpendicularly to the mask 5. As a result, the anisotropy of etching is strengthened, and an etching velocity is decelerated.

26. 发明专利

JPS62152126A MASK FOR X-RAY EXPOSURE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS62152126A
公开(公告)日：1987-07-07
申请号：JP29640985
申请日：1985-12-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJIWARA NOBUO , YOSHIOKA NOBUYUKI , NISHIKAWA KIICHI , SHIMANO HIROKI
IPC分类号： G03F1/00 , G03F1/22 , H01L21/027 , H01L21/30
摘要： PURPOSE:To improve the transfer precision of a mask pattern by a method wherein, when a mask substrate is arranged on the position for X-ray exposure, the side of X-ray absorbing pattern is formed to be made in parallel with the exposing X-rays entering into wide angular range with the mask substrate. CONSTITUTION:A mask substrate 2, a polymer layer 4 and a metallic layer 5 are laminated on a substrate 3b to form recessions 4a by reactive etching process using ion beam divergence focusing system. These recessions 4a are plated and filled with an X-ray absorbing material and then the polymer layer 4 is removed to form an X-ray exposing mask comprising the X-ray absorbing pattern 1 and the mask substrate 2. When the mask substrate 2 is arranged on the position for X-ray exposure, the X-ray exposing mask can be used so that the side of X-ray absorbing pattern 1 may be made in parallel with the exposing X-rays 20 entering into wide angular range with the mask substrate 2 to transfer a mask pattern to a silicon wafer 12 subject to high precision and no distortion at all.

27. 发明专利

JPS62144328A X-RAY MASK AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS62144328A
公开(公告)日：1987-06-27
申请号：JP28680785
申请日：1985-12-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： SHIMANO HIROKI , YOSHIOKA NOBUYUKI , NISHIKAWA KIICHI , FUJIWARA NOBUO
IPC分类号： G03F1/00 , G03F1/22 , G03F1/58 , H01L21/027 , H01L21/30
摘要： PURPOSE:To obtain an X-ray mask having a high mask contrast, and to form a fine resist pattern having a steep edge profile by forming an X-ray absorption band pattern in multilayer film structure in which X-ray penetrating substances and substances having a large X-ray absorption coefficient are superposed alternately. CONSTITUTION:A resist pattern 4 is shaped onto an X-ray penetrating film 2. Thin-films 6, 7 consisting of (AuPd,C), (W,C), (ReW,C), etc. are evaporated alternately at proper intervals on the film, on which the resist pattern 4 is formed, by MBE, ion cluster beams, etc., thus shaping an X-ray absorption band 5 having multilayer film structure. The resist pattern 4 and the X-ray absorption band 5 on the pattern 4 are removed, and etching is conducted so as to leave a susceptor 1a for a substrate 1. Consequently, an X-ray mask having an X-ray absorption band pattern 5a having multilayer film structure is shaped. When X-rays 8 are projected to the X-ray mask, X-rays transmitting the X-ray absorption band pattern 5a are reduced extremely, thus acquiring the X-ray mask having a high mask contrast.

28. 发明专利

JP2000353804A SEMICONDUCTOR DEVICE AND MANUFACTURE OF THE SAME 失效
公开(公告)号：JP2000353804A
公开(公告)日：2000-12-19
申请号：JP16578199
申请日：1999-06-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJIWARA NOBUO , MARUYAMA TAKAHIRO , SAKAMORI SHIGENORI , TERATANI AKIYOSHI , OGINO MASARU , OMI KAZUYUKI , IRIE YUZO
IPC分类号： H01L21/302 , H01L21/28 , H01L21/3065 , H01L21/3213 , H01L29/423 , H01L29/49 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To enable a semiconductor device which is equipped with a gate electrode of multilayered structure to be improved in reliability. SOLUTION: A gate electrode 7 is equipped with a polycrystalline silicon layer 3, a barrier layer 4, and a metal layer 5. For instance, the metal layer 5 is formed of W, and the barrier layer 4 is formed of RuO2. When the gate electrode 7 is formed, the metal layer 5 and the barrier 4 are etched, using at least either the barrier layer 4 or the polycrystalline silicon layer 3 as an etching stopper.

29. 发明专利

JPH0682603B2 失效
公开(公告)号：JPH0682603B2
公开(公告)日：1994-10-19
申请号：JP2317087
申请日：1987-02-03
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJIWARA NOBUO , SUZUKI YOSHIKI
IPC分类号： G03F1/00 , G03F1/22 , H01L21/027 , H01L21/30

30. 发明专利

JPH06208971A USE OF PLASMA REACTION DEVICE 失效
公开(公告)号：JPH06208971A
公开(公告)日：1994-07-26
申请号：JP268093
申请日：1993-01-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJIWARA NOBUO
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H05H1/46
摘要： PURPOSE:To provide a way of using a plasma reaction device by which high etching anisotropy is obtained. CONSTITUTION:Relating to a plasma device provided with a plasma generation chamber and the reaction chamber connected to it, a to-be-processed material is etched, while the material is supplied with high frequency electric power, under the condition in which the plasma loss amount at an inner wall A in the plasma generation chamber 1 is set to one and a half times that at an inner wall B in the reaction chamber 11 or times.

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