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    • 22. 发明专利
    • Information carrier and its manufacture
    • 信息载体及其制造
    • JPS6113455A
    • 1986-01-21
    • JP13420684
    • 1984-06-28
    • Matsushita Electric Ind Co Ltd
    • MATSUBARA KUNIHIRONISHINO SEIJIOOTA TAKEO
    • B41M5/26G11B7/24G11B7/253G11B7/256G11B7/257G11B7/26
    • G11B7/2542G11B7/2534G11B7/257
    • PURPOSE:To prevent separation even in a high-temperature, high-humidity atmosphere, to minimize the deterioration of a recording film, and improve the reliability by irradiating the entire groove formation surface of a disk base material in which a groove for light guidance is formed with far ultraviolet rays and providing cleaning effect. CONSTITUTION:The groove 2 for light guidance is formed in the disk base 1 made of polycarbonate resin, and the entire groove formation surface is irradiated with far ultraviolet rays 6. The ultraviolet-ray excited physically and chemically active layer 7 which is irradiated as mentioned above has effect for removing thin-film type stains and even an uneven surface layer deterioration layer, thereby obtaining an optically uniform base material surface. A recording film 3 is formed on the active layer 7 by vapor deposition or sputtering in a short time while the active layer 7 is held clean, and the entire external surface of the disk substrate 8 is covered with a protective film 4 made of ultraviolet- ray setting resin. Consequently, the surface of the base material is irradiated with far ultraviolet rays to increase greatly the adhesive strength of the recording film to the base material.
    • 目的:即使在高温,高湿度的气氛中也能防止分离,以最小化记录膜的劣化,通过照射光引导用槽的盘基材的整个槽形成面,提高可靠性 形成远紫外线并提供清洁效果。 构成:用于引导的槽2形成在由聚碳酸酯树脂制成的盘基底1中,并且整个槽形成表面被远紫外线6照射。如上所述照射的紫外线激发的物理和化学活性层7 以上都具有去除薄膜型污渍以及甚至不均匀的表面层劣化层的效果,从而获得光学均匀的基材表面。 记录膜3通过气相沉积或溅射在短时间内形成在活性层7上,同时有源层7保持清洁,并且盘基板8的整个外表面被紫外线照射的保护膜4覆盖, 射线固化树脂。 因此,用远紫外线照射基材的表面,大大提高了记录膜对基材的粘合强度。
    • 29. 发明专利
    • SPUTTERING DEVICE
    • JPS63128172A
    • 1988-05-31
    • JP27328886
    • 1986-11-17
    • MATSUSHITA ELECTRIC IND CO LTD
    • MATSUBARA KUNIHIROOTA TAKEOINOUE ISAMUYOSHIOKA KAZUMI
    • C23C14/34G11B7/26
    • PURPOSE:To obtain a sputtering device capable of control for required composition by providing both a means for detecting the rate of formation of a thin film and such a means that this detection value is compared with previously preset reference value and also sputtering conditions are subjected to feedback control based on the compared result. CONSTITUTION:A sputtering device main body 1 is provided with electrodes 3, 4 in the inside of a chamber 2 and both a base plate 5 for forming a thin film and a target 6 are fitted thereon respectively. Fixed amount of sputtering gas 8 is introduced into the chamber 2 through a flow rate controller 7 for gas and the inside of the chamber 2 is kept at constant degree of vacuum. A high-frequency oscillator 10 is connected between the electrodes 3, 4 and high frequency is impressed to generate plasma 11 on the target 6 and a thin film is formed on the base plate. On the other hand, the rate of formation of the thin film is monitored with a detector 13 thereof using, i.e., a crystal resonator 12. This detection value is sent to an amplifier 14 and thereafter fed to a comparator 15 which compares it with reference value corresponding to previously preset rate and the flow rate of sputtering gas is subjected to feedback control with a controller 16 based on its output signal.
    • 30. 发明专利
    • THIN FILM FORMING METHOD
    • JPS6338579A
    • 1988-02-19
    • JP18211086
    • 1986-08-01
    • MATSUSHITA ELECTRIC IND CO LTD
    • KODERA KOICHIOOTA TAKEOMATSUBARA KUNIHIROINOUE ISAMUAKIYAMA TETSUYA
    • H01L21/31C23C14/54G01B11/06G01N21/45
    • PURPOSE:To permit in-process control of the compsn. of a thin film to be formed so that the desired compsn. of the thin film is realized by controlling the conditions for forming the thin film in accordance with the in-process measurement of the thickness of the thin film formed and reflectivity spectra. CONSTITUTION:The Te atoms or molecules sputtered from a Te target 102 combine with O2 in a chamber 105 and form a thin TeOx film on a rotating substrate 108 at the time of forming; for example, the thin TeOx film by a sputtering method. The sputtering speed is controlled by a crystal resonator 110 method. A light projecting and receiving type optical fiber 114 is provided above the substrate 108 and light is projected through said fiber to the substrate 108. The reflected light thereof is guided to a spectrophotometric detector 116 where the light is spectrally separated. The separated rays of the light are detected as the spectra by the detecting element. The measurement signal obtd. in such a manner and the reference signal of the preset reflectivity spectra are compared and contrasted by a comparator 120 and the conditions for forming the thin film are so controlled as to minimize the difference therebetween.