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    • 21. 发明专利
    • Ceramic composition, oxygen separator and chemical reactor
    • 陶瓷组合物,氧分离器和化学反应器
    • JP2006206438A
    • 2006-08-10
    • JP2006075527
    • 2006-03-17
    • Nippon Steel Corp新日本製鐵株式会社
    • NAGAI TORUITO WATARUDONOMAE HITOSHISAKON TADASHIYAMADA NORIKO
    • C04B35/00B01D53/22B01D71/02C01B13/02C04B35/50
    • PROBLEM TO BE SOLVED: To provide a mixed conductor dense film having high oxygen permeability, easily manufactured and a ceramic composition for a porous body. SOLUTION: The ceramic composition is an oxide ion mixed conductor having perovskite type crystal structure and is used as a porous body for oxygen separator composite material or a material for the dense thin film formed on the porous body. A composite material of the dense continuous film of the ion mixed conductor and the porous body which exhibits excellent oxygen permeability in the technical field such as selective permeation and separation process of oxygen by the oxide ion mixed conductor and a diaphragm reactor of partial oxidation of hydrocarbon and is easily manufactured is obtained by the constitution. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供容易制造的具有高透氧性的混合导体致密膜和用于多孔体的陶瓷组合物。 解决方案:陶瓷组合物是具有钙钛矿型晶体结构的氧化物离子混合导体,用作氧气分离器复合材料的多孔体或多孔体上形成的致密薄膜的材料。 离子混合导体的致密连续膜和多孔体的复合材料在氧化物离子混合导体的氧选择性渗透分离处理和碳氢化合物的部分氧化的隔膜反应器等技术领域中表现出优异的氧渗透性 并且通过该结构获得容易制造。 版权所有(C)2006,JPO&NCIPI
    • 27. 发明专利
    • DEVICE FOR PRODUCING THIN FILM
    • JPH0578826A
    • 1993-03-30
    • JP13946391
    • 1991-05-16
    • NIPPON STEEL CORP
    • IMAFUKU MUNEYUKISHIMADA HARUOITO WATARU
    • C23C14/24C23C14/50C23C16/46
    • PURPOSE:To enhance heating efficiency or cooling efficiency and to simultaneously stabilize the temperature of a base plate in an early period in film formation in the case of forming a thin film on a heated base plate or a cooled base plate by a physical vapor deposition method or a chemical vapor deposition method. CONSTITUTION:In a device for producing a thin film, a heat shielding body 1 is arranged in the space between a base plate holder 4 for fixing heated base plate 2 or a cooled base plate and a vaporization source and also in the vicinity of the base plate holder. In the case of forming the thin film by heating the base plate at >=300 deg.C, the electric power of a heater is drastically reduced. Moreover, both fluctuation of the temperature of the base plate just after starting vapor deposition and the fluctuation time thereof are drastically suppressed and the conditions of film formation are stabilized. Further even when the base plate is cooled, the cooling efficiency is drastically enhanced and also both fluctuation of the temperature of the base plate just after starting vapor deposition and the fluctuation time thereof are drastically suppressed and the conditions of film formation are stabilized.