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    • 4. 发明专利
    • PRETREATMENT EQUIPMENT OF FIBER FOR METAL-BASE COMPOSITE MATERIAL
    • JPH01215934A
    • 1989-08-29
    • JP4258788
    • 1988-02-25
    • NIPPON STEEL CORP
    • HASHIMOTO KEIZOIMAFUKU MUNEYUKIMATSUMIYA TORU
    • B22D19/14C22C47/08
    • PURPOSE:To enable continuous treatment of fiber and to obtain a fiber block uniformly stuck with powder by arranging a fiber feeder, a hot air device, a mixed liquid tank and a fiber winder in series. CONSTITUTION:Fiber is continuously fed with the rolling mechanism of a fiber feeder A and the twist of a fiber bundle is corrected with a biaxial rolling mechanism 1 capable of rotating in the face vertical to the feeding direction and fiber is sent to a hot air device B where the fiber is separated one by one with straightened hot air and dried, the dried fiber is then passed through a soln. mixed with powder and a binder in a mixed soln. tank C where the surface of the fiber is uniformly stuck with powder by vibration of an ultrasonic vibrator 14. A fiber block uniformly stuck with powder is made by laminating and winding the fiber continuously and uniformly with reciprocating the winding part 16 of a fiber winder D in the direction of a winding shaft. When a long fiber metallic composite material is produced by a high-pressure casting method utilizing the fiber block made in the above-mentioned series of pretreatment equipment, the sound composite material uniformly dispersed with the fiber can be obtained.
    • 5. 发明专利
    • JPH05238891A
    • 1993-09-17
    • JP7590392
    • 1992-02-28
    • NIPPON STEEL CORP
    • TEJIMA HIDEKAZUSHIMADA HARUOIMAFUKU MUNEYUKI
    • C30B29/22H01B12/06H01B13/00H01L39/24
    • PURPOSE:To improve superconductive characteristics by replacing the interior of a physical vacuum deposition device with an atmosphere of an inert Gas or N2 under a prescribed pressure when a substrate is at a specific temperature or above and further cooling the substrate in a process for cooling a thin film from a film-forming temperature to ambient temperature. CONSTITUTION:Sputtering is carried out in a physical vacuum deposition device with Ar/O2 gas, etc., using a sintered compact of Y1Ba2Cu3O7-x. (hereinafter referred to as YBCO) as a target. Thereby, a thin film of the YBCO is formed on a substrate such as Mg0 crystal oriented in (100) face at a prescribed temperature. The electrical conduction to a heater for heating the substrate on which the film is formed is then shut off to cool the substrate. When the substrate temperature is >=500 deg.C, the interior of the physical vacuum deposition device is replaced with an atmosphere of an inert gas or N2 under 1mTorr to 1000Torr and cooled to ambient temperature. As a result, the objective oxide-based superconducting thin film, having the high critical temperature and capable of exhibiting good superconductivity is obtained.
    • 6. 发明专利
    • DEVICE FOR PRODUCING THIN FILM
    • JPH0578826A
    • 1993-03-30
    • JP13946391
    • 1991-05-16
    • NIPPON STEEL CORP
    • IMAFUKU MUNEYUKISHIMADA HARUOITO WATARU
    • C23C14/24C23C14/50C23C16/46
    • PURPOSE:To enhance heating efficiency or cooling efficiency and to simultaneously stabilize the temperature of a base plate in an early period in film formation in the case of forming a thin film on a heated base plate or a cooled base plate by a physical vapor deposition method or a chemical vapor deposition method. CONSTITUTION:In a device for producing a thin film, a heat shielding body 1 is arranged in the space between a base plate holder 4 for fixing heated base plate 2 or a cooled base plate and a vaporization source and also in the vicinity of the base plate holder. In the case of forming the thin film by heating the base plate at >=300 deg.C, the electric power of a heater is drastically reduced. Moreover, both fluctuation of the temperature of the base plate just after starting vapor deposition and the fluctuation time thereof are drastically suppressed and the conditions of film formation are stabilized. Further even when the base plate is cooled, the cooling efficiency is drastically enhanced and also both fluctuation of the temperature of the base plate just after starting vapor deposition and the fluctuation time thereof are drastically suppressed and the conditions of film formation are stabilized.