专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明专利

JP2008268178A Method for manufacturing substrate for making microarray 有权
标题翻译：制造微晶基板的方法
公开(公告)号：JP2008268178A
公开(公告)日：2008-11-06
申请号：JP2008003827
申请日：2008-01-11
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： KUSAKI WATARU , KANOU TAKESHI , ISHIHARA TOSHINOBU
IPC分类号： G01N33/543 , G01N33/53 , G01N37/00
CPC分类号： B01J19/0046 , B01J2219/00317 , B01J2219/00608 , B01J2219/00617 , B01J2219/00621 , B01J2219/00626 , B01J2219/00635 , B01J2219/00637 , B01J2219/00722 , Y10T428/31663
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a substrate for making a microarray, in which a monomolecular film is not detached when a target molecule is immobilized on the substrate using the monomolecular film having a silicon oxide chain. SOLUTION: The method for manufacturing the substrate for making the microarray comprises at least a step of forming a monomolecular film on the substrate using a silane compound. The monomolecular film is formed using a solution comprising the silane compound and a nitrogen-containing organic base in the step. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种制造微阵列的基板的方法，其中当使用具有氧化硅链的单分子膜将靶分子固定在基板上时，单分子膜不分离。解决方案：用于制造微阵列的基板的制造方法至少包括使用硅烷化合物在基板上形成单分子膜的步骤。在该步骤中，使用包含硅烷化合物和含氮有机碱的溶液形成单分子膜。版权所有（C）2009，JPO＆INPIT

22. 发明专利

JP2005292162A Halftone phase shifting mask blank, halftone phase shift mask and pattern transfer method 有权
标题翻译： HALFTONE相位移位遮罩，HALFTONE相位移动掩模和图案传输方法
公开(公告)号：JP2005292162A
公开(公告)日：2005-10-20
申请号：JP2004102388
申请日：2004-03-31
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： HARAGUCHI TAKASHI , TAKAGI MIKIO , FUKUSHIMA YUICHI , SAGA TADASHI , YOSHIKAWA HIROKI , ISHIHARA TOSHINOBU , OKAZAKI SATOSHI , INAZUKI SADAOMI
IPC分类号： G03F1/32 , G03F1/68 , G03F1/80 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a halftone phase shift mask blank with a halftone phase shift film which practically satisfies requirements with respect to various properties, such as etching property and rate, electric conductivity (sheet resistance), chemical resistance and transmittance at an inspection wavelength, which become problematic in a step of producing a halftone phase shift mask and a pattern transfer step using the same, while satisfying phase difference and transmittance in exposure with short-wavelength exposure light such as F
2 laser light, and to provide a halftone phase shift mask and a pattern transfer method using the same.
SOLUTION: The halftone phase shift mask blank has the halftone phase shift film comprising a single layer or multiple layers on a substrate which is transparent to exposure light, wherein at least one of the layers contains Si and a plurality of metals as constituent elements and a content ratio of the Si to the sum of the Si and the plurality of metals is ≥90 atom%. The halftone phase shift mask and the pattern transfer method using the same are also provided.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供半色调相移膜的半色调相移掩模坯料，其实际上满足关于蚀刻性能和速率，电导率（薄层电阻），耐化学性和透射率等各种性能的要求在产生半色调相移掩模和使用该半色调相移掩模的图案转印步骤的步骤中成为问题的检查波长，同时满足诸如F 2的短波长曝光光的曝光时的相位差和透射率， SB>激光，并提供半色调相移掩模和使用其的图案转印方法。半色调相移掩模毛坯具有半透明相移膜，其在基底上包含对曝光光透明的单层或多层，其中至少一层包含Si和多种金属作为成分元素和Si与Si和多种金属之和的含量比为≥90原子％。还提供了半色调相移掩模和使用其的图案转印方法。版权所有（C）2006，JPO＆NCIPI

23. 发明专利

JP2004035671A Silicon-containing polymer compound, resist material and method of pattern formation 有权
公开(公告)号：JP2004035671A
公开(公告)日：2004-02-05
申请号：JP2002192947
申请日：2002-07-02
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： TAKEDA TAKANOBU , HATAKEYAMA JUN , ISHIHARA TOSHINOBU
IPC分类号： C08F222/06 , C08F230/08 , C08F232/08 , C08G77/442 , G03F7/039 , G03F7/075 , H01L21/027
CPC分类号： C08F230/08 , C08G77/442 , G03F7/0395 , G03F7/0758
摘要： PROBLEM TO BE SOLVED: To obtain a new polymer silicone compound which is preferably usable not only as a material for a two-layer resist method, having high sensitivity and high resolution, especially suitable for forming a pattern with a high aspect ratio but also as a base polymer for a chemical amplification positive type resist material for forming a pattern having excellent heat resistance and the chemical amplification positive type resist material comprising the compound as the base polymer, and to provide a method of pattern formation.
SOLUTION: The silicon-containing polymer compound contains a repeating unit of three components represented by general formula (1) (R
1 , R
2 and R
3 are each hydrogen atom, a 1-10C straight-chain, branched-chain or cyclic alkyl group; R
4 , R
5 and R
6 are mutually the same or different and are each hydrogen atom, a 1-20C alkyl group, a haloalkyl group or a 6-20C aryl group; R
7 is a 4-20C straight-chain, branched-chain or cyclic alkyl group; n is 1-5; p, q and r are each a positive number). The resist material is sensitive to high-energy rays and has excellent sensitivity, resolution and resistance to oxygen plasma etching at ≤300 nm wavelength.
COPYRIGHT: (C)2004,JPO

24. 发明专利

JP2010237191A Method for producing molecule immobilizing substrate and molecule immobilizing substrate 有权
标题翻译：生产分子固化底物和分子固定底物的方法
公开(公告)号：JP2010237191A
公开(公告)日：2010-10-21
申请号：JP2009277267
申请日：2009-12-07
申请人： Shin-Etsu Chemical Co Ltd , 信越化学工業株式会社
发明人： KUSAKI WATARU , ISHIHARA TOSHINOBU , KANAO GO , WATANABE TAKESHI
IPC分类号： G01N33/543 , C07K17/02 , C12N15/09 , G01N33/547 , G01N37/00
CPC分类号： G01N33/54393 , C08L83/04 , C08L83/06 , G01N33/543 , G01N33/54353
摘要： PROBLEM TO BE SOLVED: To provide a method of producing a molecule immobilizing substrate in which peeling problem of an immobilized molecule does not occur when the molecule is immobilized on the substrate and inspected. SOLUTION: The method of producing the molecule immobilizing substrate includes at least a step of forming, on a substrate, a monomolecular film where one of hydroxyl, cyano, and oxiranyl groups is oriented toward a surface side and a step of forming, on the substrate, a monomolecular film where carboxyl group is oriented toward the surface side by chemically modifying one of hydroxyl, cyano, and oxiranyl groups of the monomolecular film to convert into the carboxyl group. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：待解决的问题：提供一种分子固定基质的制备方法，其中当分子固定在基材上并检查时不会发生固定化分子的剥离问题。解决方案：制备分子固定基质的方法至少包括在基材上形成羟基，氰基和环氧乙烷基之一朝向表面侧的单分子膜和形成步骤的步骤，通过化学修饰单分子膜的羟基，氰基和环氧乙烷基之一而将羧基取向为表面侧的单分子膜转化为羧基。版权所有（C）2011，JPO＆INPIT

25. 发明专利

JP2010113345A Patterning process 有权
标题翻译：绘图过程
公开(公告)号：JP2010113345A
公开(公告)日：2010-05-20
申请号：JP2009215391
申请日：2009-09-17
申请人： Shin-Etsu Chemical Co Ltd , 信越化学工業株式会社
发明人： HATAKEYAMA JUN , IIO TADASHI , WATANABE TAKESHI , KANAO GO , ISHIHARA TOSHINOBU
IPC分类号： G03F7/40 , G03F7/11 , G03F7/38 , H01L21/027
CPC分类号： G03F7/405 , G03F7/0035 , H01L21/0273 , H01L21/0337 , H01L21/0338
摘要： PROBLEM TO BE SOLVED: To provide a patterning process capable of efficiently insolubilizing a first positive resist pattern, thus achieving effective double patterning. SOLUTION: The patterning process includes steps of: applying a positive resist material onto a substrate to form a resist film, heat treating, exposing the resist film to high-energy radiation, heat treating, then developing with a developer to form a first resist pattern; applying a protective coating solution containing a silicon compound having at least one amino group and a hydrolyzable reactive group onto the first resist pattern, heating to cover the first resist pattern surface with a protective coating; and applying a second positive resist material on the substrate to form a second resist film, heat treating, exposing the second resist film to high-energy radiation, heat treating, and then developing the second resist film with a developer. For example, by double patterning of forming the second pattern in a space portion of the first pattern to reduce the pattern pitch to one half, the substrate can be processed by a single dry etching. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够有效地使第一正性抗蚀剂图案不溶化的图案化工艺，从而实现有效的双重图案化。图案化方法包括以下步骤：将正性抗蚀剂材料施加到基材上以形成抗蚀剂膜，热处理，将抗蚀剂膜暴露于高能量辐射，热处理，然后用显影剂显影以形成第一抗蚀剂图案; 将含有至少一个氨基的硅化合物和可水解反应性基团的保护涂层溶液涂覆到第一抗蚀剂图案上，加热以用保护涂层覆盖第一抗蚀剂图案表面; 以及在所述基板上施加第二正性抗蚀剂材料以形成第二抗蚀剂膜，热处理，将所述第二抗蚀剂膜暴露于高能量辐射，热处理，然后用显影剂显影所述第二抗蚀剂膜。例如，通过在第一图案的空间部分中形成第二图案的双重图案化以将图案间距减小到一半，可以通过单次干蚀刻来处理基板。版权所有（C）2010，JPO＆INPIT

26. 发明专利

JP2011110612A Hollow structure fabrication method 有权
标题翻译：中空结构制造方法
公开(公告)号：JP2011110612A
公开(公告)日：2011-06-09
申请号：JP2009265958
申请日：2009-11-24
申请人： Shin-Etsu Chemical Co Ltd , 信越化学工業株式会社
发明人： KUSAKI WATARU , ISHIHARA TOSHINOBU
IPC分类号： B81C1/00 , B32B3/26 , G03F7/004 , G03F7/40
CPC分类号： B32B38/10
摘要： PROBLEM TO BE SOLVED: To provide a fabrication method with which a laminate having a hollow structure can be produced more easily, while enabling to produce a multilayer structure as well.
SOLUTION: This method for producing a hollow structure by stacking-up a structural material among fabrication methods of a hollow structure on a substrate, includes: a step (a) of forming a structural material layer on a substrate; a step (b) of forming a pattern on the structural material layer; a step (c) of forming a sacrificial material layer by burying between the patterns with a water-soluble or an alkaline-soluble polymer as the sacrificial material to be buried between the patterns; a step (d) of further laminating a structural material layer and forming a pattern on the structural material layer laminated; and a step (e) of finally removing the sacrificial material after all of lamination is completed.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种能够更容易地制造具有中空结构的层叠体的制造方法，同时能够制造多层结构。解决方案：通过在基板上制造中空结构体的方法之中堆叠结构材料来制造中空结构的方法包括：在基板上形成结构材料层的工序（a）在所述结构材料层上形成图案的步骤（b）; 通过将图案与水溶性或碱溶性聚合物之间埋入作为掩模在图案之间的牺牲材料形成牺牲材料层的步骤（c）; 进一步层压结构材料层并在层压的结构材料层上形成图案的步骤（d）; 以及在完成所有层压之后最终去除牺牲材料的步骤（e）。版权所有（C）2011，JPO＆INPIT

27. 发明专利

JP2011109917A Nucleic acid base sequence inspection apparatus and nucleic acid base sequence inspection method 审中-公开
标题翻译：核酸碱基序列检测装置和核酸碱基序列检测方法
公开(公告)号：JP2011109917A
公开(公告)日：2011-06-09
申请号：JP2009265914
申请日：2009-11-24
申请人： Shin-Etsu Chemical Co Ltd , 信越化学工業株式会社
发明人： KUSAKI WATARU , ISHIHARA TOSHINOBU
IPC分类号： C12M1/00 , C12M1/34 , C12Q1/68 , G01N33/53
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method, by which gene inspection operations can be continuously and well conveniently performed from the preparation of a specimen to the inspection thereof, and a target gene from the specimen can easily be detected.
SOLUTION: The apparatus for inspecting a nucleic acid base sequence is characterized by comprising at least an ultra micro container having one or more respective chambers having a size of one specimen, an introduction means for introducing a specimen solution and a medicine solution into the ultra micro container, a draining means for draining a waste liquid, and a device for observing the specimen to measure the base sequence.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以从样品制备到其检查连续且良好地进行基因检查操作的装置和方法，并且可以容易地检测来自样品的靶基因。解决方案：用于检查核酸碱基序列的装置的特征在于至少包括具有一个或多个具有一个样本大小的相应室的超微容器，用于将样品溶液和药液引入的引入装置超微容器，用于排出废液的排水装置，以及用于观察样品以测量碱基序列的装置。版权所有（C）2011，JPO＆INPIT

28. 发明专利

JP2010060291A Method for manufacturing substrate used for preparation of microarray 有权
标题翻译：制备用于制备微量晶体的底物的方法
公开(公告)号：JP2010060291A
公开(公告)日：2010-03-18
申请号：JP2008223026
申请日：2008-09-01
申请人： Shin-Etsu Chemical Co Ltd , 信越化学工業株式会社
发明人： KUSAKI WATARU , KANAO GO , ISHIHARA TOSHINOBU
IPC分类号： G01N33/543 , G01N33/53 , G01N37/00
CPC分类号： G01N33/54353 , B01J2219/00527 , B01J2219/00596 , B01J2219/00612 , B01J2219/00626 , B01J2219/00637 , B01J2219/00659 , C40B40/04 , C40B50/18
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a substrate used for the preparation of a microarray capable of controlling the density or orientation of amino groups oriented on the front side and not causing the peeling of the monomolecular membrane on the substrate. SOLUTION: The method for manufacturing the substrate used for the preparation of the microarray includes at least the step of forming the monomolecular membrane having the oxiranyl groups oriented on its surface side on the substrate and the step of allowing a solution containing diamine compound to act on the oxiranyl groups to form a monomolecular membrane having amino groups oriented on its surface side on the substrate. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：待解决的问题：提供一种制备用于制备能够控制正面取向的氨基的密度或取向的微阵列的基板的方法，并且不会导致基板上的单分子膜的剥离。解决方案：用于制备微阵列的基板的制造方法至少包括形成在其表面侧取向的环氧乙烷基的单分子膜的步骤和允许含有二胺化合物的溶液的步骤作用于环氧乙烷基上以形成在其表面侧取向的氨基的单分子膜。版权所有（C）2010，JPO＆INPIT

29. 发明专利

JPS6197357A Silicon carbide precursor composition 失效
标题翻译：碳化硅前体组合物
公开(公告)号：JPS6197357A
公开(公告)日：1986-05-15
申请号：JP21814084
申请日：1984-10-17
申请人： Shin Etsu Chem Co Ltd
发明人： TAKAMIZAWA MINORU , KOBAYASHI YASUSHI , ISHIHARA TOSHINOBU , TAKEDA YOSHIFUMI , HAYASHIDA AKIRA
IPC分类号： C08L83/00 , C04B35/571 , C08G79/00 , C08L83/02 , C08L83/16 , D01F9/10
CPC分类号： C08G79/00 , C04B35/571 , C08L83/16 , C08L83/00
摘要： PURPOSE: To provide the title compsn. which has improved spinnability and is freed from the problem of brittleness, consisting of a polycarbosilane polymer (organometallic copolymer) and an organosilicon high-molecular compd.
CONSTITUTION: An organosilicon compd. having a polysilane skeleton of formula I (wherein R
5 is methylene, phenylene; R
6 , R
7 are each a 1W6C monovalent hydrocarbon group; x, y, z are each a positive number; x≥y) or a mixture thereof with an organometallic compd. (e.g. tetrabutoxytitanium) is subjected to a heat-decomposing polycondensation reaction to obtain a polycarbosilane polymer or its organometallic copolymer (A). 80W99.9wt% component A is blended with 20W0.1wt% linear organosilicon high-molecular compd. having a weight-average MW of 10,000W1,000,000 and formula II (wherein R
1 , R
2 are each a monovalent hydrocarbon group; R
3 is OH, amino, trialkylsiloxy, monova lent hydrocarbon group; m≥100).
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：提供标题compsn。其具有改善的可纺性，并且不含由聚碳硅烷聚合物（有机金属共聚物）和有机硅高分子化合物组成的脆性问题。构成：有机硅化合物具有式I的聚硅烷骨架（其中R 5是亚甲基，亚苯基; R 6，R 7各自是1-6C单价烃基; x，y，z各自为正数; x> = y）或其与有机金属化合物的混合物。（例如四丁氧基钛）进行热分解缩聚反应，得到聚碳硅烷聚合物或其有机金属共聚物（A）。 80-99.9wt％组分A与20-0.1wt％线性有机硅高分子化合物混合。重均分子量为10,000-1,000,000和式II（其中R 1，R 2各自为一价烃基; R 3为OH，氨基，三烷基甲硅烷氧基，单未取代的烃基; m = 100）。

30. 发明专利

JPS6165890A Novel organic silicon compound, its production and antitumor agent containing same as active ingredient 失效
标题翻译：新有机硅化合物，其生产和含有相同活性成分的抗菌剂
公开(公告)号：JPS6165890A
公开(公告)日：1986-04-04
申请号：JP18819784
申请日：1984-09-10
申请人： Sanwa Kagaku Kenkyusho:Kk , Shin Etsu Chem Co Ltd
发明人： TOYOSHIMA SHIGERU , KURONO MASATSUNE , UNNO RYOICHI , KIMURA HIROMOTO , ITO KOICHI , ISHIHARA TOSHINOBU , YAMAMOTO AKIRA
IPC分类号： A61K31/695 , A61P35/00 , C07F7/08 , C07F7/10 , C07F7/18
CPC分类号： C07F7/0812
摘要： NEW MATERIAL:A compound of formula I (R is H, halogen, alkyl; R
1 WR
3 are alkyl, alkoxy, phenyl which may be substituted, alkylcarbonyloxy, trialkylsilyloxy; R
4 is H, alkyl, alkenyl; where in case of R
1 =R
2 =R
3 =CH
3 , m, n are not H simultaneously).
EXAMPLE: 1-[2-(3-Trimethylsilypropyl)thio]ethylcarbamoyl]-5-fluorouracil.
USE: Antitumor agent with low toxicity.
PREPARATION: The reaction of a compound of formula II such as 1- chloroformyl-5-fluorouracil with another compound of formula III such as 2-[(3- trimethylsilylpropyl)thio]ethylamine in equimolar amounts is carried out in a solvent such as pyridine in a atmosphere of argon, preferably at 0W10°C.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：新物质：式Ⅰ化合物（R为H，卤素，烷基，R 1 -R 3为烷基，烷氧基，可被取代的苯基，烷基羰基氧基，三烷基甲硅烷氧基，R4为H，烷基，烯基; R1为R2时 = R3 = CH3，m，n不同时为H）。实施例：1- [2-（3-三甲基硅丙基）硫代]乙基氨基甲酰基] -5-氟尿嘧啶。用途：低毒性抗肿瘤药。制备：等摩尔量的式II化合物如1-氯甲酰基-5-氟尿嘧啶与其它式III化合物如2 - [（3-三甲基甲硅烷基丙基）硫代]乙胺的反应在溶剂如吡啶在氩气气氛中，优选在0-10℃。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式