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    • 27. 发明专利
    • MULTILAYER MODULE CIRCUIT SUBSTRATE
    • JPH0685100A
    • 1994-03-25
    • JP23061892
    • 1992-08-31
    • HITACHI LTD
    • YABUSHITA AKIRAMATSUZAKI EIJIMATSUYAMA HARUHIKO
    • H01L21/3205H01L21/822H01L23/12H01L23/14H01L23/52H01L27/04H05K1/00H05K1/16
    • PURPOSE:To make the distribution of the temperature of a heat treatment uniform, to realize a film having a uniform quality, and to improve the accuracy of a resistance value and the stability thereof by causing a thin-film resistance element of a metal silicide film to be incorporated within a thin-film wiring circuit, in a multilayer module substrate in which thick films and thin films are formed in multilayer. CONSTITUTION:In a thick-film/thin-film hybrid circuit substrate for use in a computer, in which a thin film multilayer circuit composed of deposited interlayer insulating films 21-23 which are made of an organic film such as polyimide is formed on a thick film multilayer circuit substrate 1, a thin-film resistance element 4 which is incorporated in a thin film wiring circuit as a terminating resistor is made of a metal silicide film. Specifically, after spin-coating, a silicon thin film 420 is formed on the interlayer insulating film 21, made of polyimide-based resin, that has been subjected to a heat treatment. A metal thin film 421 is formed on the silicon thin film. This is then subjected to a heat treatment within an oven filled with an atmosphere of nitrogen, so that a chrome silicide thin film 422 is formed between the thin films 420 and 421. Thereafter, it is subjected to a wet etching treatment, whereby a predetermined pattern of a thin film resistance element 4 is formed and an internal electrode 41 and an external electrode 43 are also formed.
    • 28. 发明专利
    • JPH05335196A
    • 1993-12-17
    • JP13454992
    • 1992-05-27
    • HITACHI LTD
    • NISHIKAME MASASHIMATSUYAMA HARUHIKOYOSHIMOTO MITSUO
    • G03F1/00G03F1/68H01L21/027H01L21/28G03F1/08
    • PURPOSE:To enable a negative photosensitive resin to be exposed to light without forming the image of a foreign object with an unmodified conventional device by a method wherein a photomask pattern is formed based on the calculation of the size of a foreign object attached to the photomask. CONSTITUTION:A pattern 5, where a required figure is enlarged along a certain direction to be larger than the maximum length of the projection of a foreign object expected to be attached to a photomask 1, is provided. The pattern 5 is transferred onto a negative photosensitive resin 6 on a substrate 8, the photomask 1 and the substrate 8 are aligned with each other, and then the photosensitive resin 6 is exposed to light. Then, the photomask 1 is made to move in a certain direction by a distance longer than the maximum length of the projection of a foreign object attached to the photomask 1, and then the photosensitive resin 6 is exposed to light again. By this setup, a cleanable photomask can be designed without using a pellicle, an aligning operation can be carried out at once, a conventional device is not required to be modified, and the image of a foreign object on a photomask is not formed.