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21. 发明专利

JP2004006965A METHOD OF POLISHING SUBSTRATE 审中-公开
公开(公告)号：JP2004006965A
公开(公告)日：2004-01-08
申请号：JP2003280927
申请日：2003-07-28
申请人： HITACHI CHEMICAL CO LTD
发明人： KURATA YASUSHI , ASHIZAWA TORANOSUKE , HIRAI KEIZO , AKAHORI SATOHIKO , OTSUKI HIROTO , HANAZONO MASANOBU
IPC分类号： B24B37/00 , B24B37/005 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To solve the problems wherein a process control based on a polishing time is hard to carry out, and a buried film is hard to be flat enough due to dishing in a recess CMP technique for forming a shallow trench isolation, a metal-embedded interconnect line, and the like so as to provide a method of polishing a substrate, which is capable of removing the excessive film layers of an silicon oxide film and an embedded film of metal or the like, performing a flattening operation efficiently with high accuracy, and easily carrying out a process control. SOLUTION: The substrate polishing method is a method of polishing a substrate with a polishing agent containing abrasive particles and an additive agent which gives a polishing pressure-dependent inflection point to a polishing speed. Provided that the polishing pressure is represented by P, the above polishing method comprises a first process of polishing the substrate with the polishing agent whose loading gives an inflection point to the polishing speed at a pressure P', wherein the pressure P' and the polishing pressure P are set so as to satisfy a formula P'>P, and a second process of polishing the substrate with the polishing agent whose loading gives an inflection point to the polishing speed at a pressure P", wherein the pressure P" and the polishing pressure P are set so as to satisfy a formula P" COPYRIGHT: (C)2004,JPO

22. 发明专利

JPH07211420A CONNECTION METHOD FOR HIGHLY FINE CIRCUIT 失效
公开(公告)号：JPH07211420A
公开(公告)日：1995-08-11
申请号：JP37294
申请日：1994-01-07
申请人： HITACHI CHEMICAL CO LTD
发明人： HANAZONO MASANOBU , TSUBOMATSU YOSHIAKI , NAKAYAMA HAJIME
IPC分类号： H01R43/00 , H05K3/40
摘要： PURPOSE:To provide a connection method for a highly fine circuit by which the highly fine and highly reliable connection of 5-100mum becomes possible. CONSTITUTION:Through holes 3 are made by patterning a board 1, where a polyimide film 2 is adhering, finely on the level of about 5-100mum by a laser beam or the like. Metallic particles larger than the diameters of the through holes are put on them, and the metallic particles are pushed in the through holes of the polyimide film by proper method such as pressurization, heating, etc., and the base board is removed, whereupon a highly precise conductive circuit, where the poles of the metallic particles separated by the insulating film are distributed in specified shape, is manufactured. This can be made use of to a connection circuit device for a liquid crystal device, a semiconductor, and a mounting board, etc.

23. 发明专利

JP2585400B2 失效
公开(公告)号：JP2585400B2
公开(公告)日：1997-02-26
申请号：JP28366988
申请日：1988-11-11
申请人： HITACHI LTD
发明人： HANAZONO MASANOBU , NARUSHIGE SHINJI , SUGITA KEN , FUKUI HIROSHI , FUKUOKA HIROTSUGU , AOI MOTOI , KATSUMOTO MASAYUKI , OGAWA TAKUJI , NARUSE ATSUSHI , SAITO SUKEO
IPC分类号： C09D5/23 , C09D7/12 , G11B5/012 , G11B5/02 , G11B5/09 , G11B5/31 , G11B5/82

24. 发明专利

JP2523647B2 失效
公开(公告)号：JP2523647B2
公开(公告)日：1996-08-14
申请号：JP15119587
申请日：1987-06-19
申请人： HITACHI LTD
发明人： KOZONO JUZO , KOMURO MATAHIRO , YAZAWA YOSHIAKI , HANAZONO MASANOBU
IPC分类号： C30B29/22 , C01G1/00 , C04B35/45 , C23C14/06 , H01B12/06 , H01F10/18 , H01L39/12

25. 发明专利

JPH05119502A ELECTROPHOTOGRAPHIC SENSITIVE BODY AND PRODUCTION THEREOF AND ELECTROPHOTOGRAPHIC DEVICE USING THE BODY 失效
公开(公告)号：JPH05119502A
公开(公告)日：1993-05-18
申请号：JP24706791
申请日：1991-08-30
申请人： NITTO DENKO CORP , HITACHI LTD
发明人： KIHARA YASUO , SHIRAI MITSUYOSHI , HAYASHI SHUNICHI , SUGIMOTO TOSHIHIKO , KUSAKA KOUTAROU , ISHIKAWA NORITOSHI , SATO AKIRA , TAMAHASHI KUNIHIRO , TAMURA KATSU , WAKAGI MASATOSHI , HANAZONO MASANOBU
IPC分类号： C08G73/10 , G03G5/05 , G03G5/08 , G03G5/147 , G03G15/22
摘要： PURPOSE:To improve the moisture resistance after the repetition of corona electrification and to improve wear resistance and cleanability as well by providing a protective layer consisting essentially of thermosetting type fluoropolyimide on a photoconductive layer. CONSTITUTION:The protective layer 103 consisting essentially of the thermosetting type fluorine-contained opolyimide is provided on the photoconductive layer 102 of the electrophotographic sensitive body having the photoconductive layer and a base of the photoconductive layer. This photoconductive layer 102 consists of at least one kind selected from amorphous silicon alone, amorphous carbon, amorphous silicon carbide, and amorphous silicon nitride. Inorg. insulators 104 are incorporated into the protective layer 103 and inorg. insulators 104 project from the surface of the protective layer. Then, the protective layer 103 formed of the resin is extremely chemically stable and is hardly oxidized in spite of repetition of corona irradiation. Since water drops hardly stick to this layer even after use' under high humidity, the effect of preventing the drop of the surface resistance is obtd.

26. 发明专利

JPH04287381A SUPERCONDUCTING ELEMENT 失效
公开(公告)号：JPH04287381A
公开(公告)日：1992-10-12
申请号：JP5217191
申请日：1991-03-18
申请人： HITACHI LTD
发明人： KASAI MASAHIRO , KANKE YOKO , ONO TOSHIYUKI , KOZONO YUZO , HANAZONO MASANOBU
IPC分类号： H01L39/02 , H01L39/22
摘要： PURPOSE:To obtain a superconducting element, such as a switching element which utilizes the unique proximity effects of a superconducting and magnetic oxide materials, electromagnetic wave/pressure detecting element, etc. CONSTITUTION:This superconducting element has a structure in which a magnetic oxide material 2 is put between a metal 1 or superconducting compound and superconducting oxide material 3 as shown in the figure. The film thickness of the magnetic oxide material is >100nm. Since a superconducting element which allows a superconducting current to flow can be obtained even when the film thickness of the intermediate layer of the three-layer structure is increased, this superconducting element can be used for integrating elements and a current injection type superconducting element can be obtained.

27. 发明专利

JPH0443989B2 失效
公开(公告)号：JPH0443989B2
公开(公告)日：1992-07-20
申请号：JP19987084
申请日：1984-09-25
申请人： HITACHI LTD
发明人： SANO MASAAKI , MITSUOKA KATSUYA , MORIJIRI MAKOTO , NARUSHIGE SHINJI , HANAZONO MASANOBU , YOSHIDA TOSHIHIRO
IPC分类号： C22C19/07 , C25D3/56 , C25D7/00 , G11B5/31 , H01F10/16 , H01F41/26

28. 发明专利

JPH0417315A MANUFACTURE OF FE16N2 FILM 失效
公开(公告)号：JPH0417315A
公开(公告)日：1992-01-22
申请号：JP11986690
申请日：1990-05-11
申请人： HITACHI LTD
发明人： KOMURO MATAHIRO , KOZONO YUZO , HANAZONO MASANOBU
IPC分类号： C23C14/06 , H01F10/18 , H01F41/20
摘要： PURPOSE:To obtain a manufacturing method of a ferromagnetic film containing Fe16N2 whose vapor-deposition speed is 500Angstrom /sec or lower and whose saturation flux density is 2.2T or higher by a method wherein Fe is vapor-deposited, in an atmosphere containing a specific amount or higher of NH3 gas, on a material whose lattice constant number is within a specific range. CONSTITUTION:Fe is vapor-deposited, in a gas atmosphere containing 0.5% or higher of NH3, on a material whose lattice constant is 5.653Angstrom or higher and 6.058Angstrom or lower; and a ferromagnetic film containing Fe16N2 whose film saturation flux density is 2.2T or higher is epitaxially grown. For example, a vacuum is produced at about 1X10 Torr before a vapor-deposition operation; after that, a gas containing 0.5% or higher of NH3 is introduced; the vacuum degree during the vapor-deposition operation is set to 1X10 to 1X10 Torr; and Fe is vapor-deposited by using an electron beam. At this time, one part of NH3 is dissociated by the electron beam, and nitrogen ions creep into the lattice of Fe. A single crystal such as GaAs, AlAs, InAs or the like or a single crystal into which they are properly mixed is used as s substrate, and a substrate temperature is set at 100 to 400 deg.C.

29. 发明专利

JPH03158470A APPARATUS FOR PRODUCING ELECTROPHOTOGRAPHIC SENSITIVE BODY 失效
公开(公告)号：JPH03158470A
公开(公告)日：1991-07-08
申请号：JP29506389
申请日：1989-11-15
申请人： HITACHI LTD
发明人： TAMAHASHI KUNIHIRO , ISHIKAWA NORITOSHI , WAKAGI MASATOSHI , TAMURA KATSU , SATO AKIRA , HANAZONO MASANOBU , KANEKO TOSHITERU
IPC分类号： C23C16/50 , C23C16/24 , C23C16/52
摘要： PURPOSE:To allow the arbitrary control of the internal stress of a film and to prevent the peeling of the film in a plasma CVD device by investigating the light emission intensity ratio in plasma and feeding back the intensity ratio to the power source system of the device. CONSTITUTION:Gaseous raw materials are introduced through a gas control system 8 into a reaction vessel 1 and a voltage is impressed between a cathode electrode 3 and a substrate 2 via a matching circuit 4 from a high frequency power source 5 to form the film on the substrate 2. The light emission, spectra from the plasma 7 in a glow discharge is taken out by an optical fiber 9 and is analyzed by a plasma spectroscopic measuring system 6, by which the intensity ratio of a specific wavelength (the plasma in gaseous SiH4 and H2 is Ralpha/SiH*). This signal is sent to the high-frequency power source 5 to control the power of the high frequency power source 5 so as to maintain the specified light emission intensity ratio in the plasma at all times. The arbitrary control of internal stress of the thin film of the thin film is possible in this way and the peeling of the film is prevented.

30. 发明专利

JPH03105896A EL DEVICE 失效
公开(公告)号：JPH03105896A
公开(公告)日：1991-05-02
申请号：JP24210689
申请日：1989-09-20
申请人： HITACHI LTD
发明人： NAKAYAMA TAKAHIRO , ABE YOSHIO , KIZAWA KENICHI , HASHIMOTO KENICHI , HANAZONO MASANOBU
IPC分类号： H01L51/50 , C09K11/06 , H01L33/26 , H01L33/40 , H05B33/12 , H05B33/14
摘要： PURPOSE:To raise electron injection efficiency and lower alteration as time being by inducing an electron and a hole to recombination luminescent a center so as to emit light. CONSTITUTION:Conductive polyacetylene molecule is bound to each of right and left sides of perillene electroluminescent center and + and - dopants are doped in the polyacetylene so as to form an electron trap and a hole trap respectively. A number of electroluminescent bodies are arranged vertically and the upper ends and the lower ends are respectively bound with conductive films and the electroluminescent bodies further reacted with conductive polyacetylene as electrodes are function of each body is combined in a huge molecule by laminating those molecules. In this way, resistance due to work function in interfaces of materials is eliminated and light emitting efficiency is highened and alteration as time being is lowered because of low heat generation.

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