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21. 发明专利

JPS62143354A DEFLECTION CIRCUIT 失效
公开(公告)号：JPS62143354A
公开(公告)日：1987-06-26
申请号：JP28187285
申请日：1985-12-17
申请人： HITACHI LTD
发明人： HOSAKA SUMIO , ONISHI TAKESHI , TAMURA HIFUMI
IPC分类号： H01J37/12 , H01J29/56 , H01J37/147 , H01J37/317
摘要： PURPOSE:To aim at the promotion of high speed and high accuracy, by installing a deflecting signal generating circuit producing biaxial deflecting signals, having bipolarity, from biaxial position signals and an electrical network with resistively divides these deflecting signals and forms voltage of these deflecting signal to each electrode of a multipolar electrostatic deflecting system. CONSTITUTION:A multipolar electrostatic deflecting system 6, electrostatically deflecting a charged beam with electrodes much more than quadrupoles, for example, eight electrodes is driven. And, biaxial deflecting signals + or -Vx and + or -Vy having bipolarity are formed from biaxial position signals Vx and Vy by a deflecting signal generating circuit. Next, this deflecting signal is resistively divided whereby voltage as the deflecting signal to each electrode of the multipolar electrostatic deflecting system 6 is formed by an electric network. This electric network forms voltage as the deflecting signal to each electrode with electric potential to be secured by resistively dividing potential between these deflecting signals Vx, -Vx, Vy and -Vy and grounding and another electric potential to be secured by resistively dividing potential between these deflecting signals. This voltage is realized by a resistive dividing circuit. Thus, a driving signal to the deflecting system is formed by resistive division on the basis of two sets of biaxial deflecting signals + or -Vx and + or -Vy, so that a drive circuit of the multipolar electrostaitic deflecting system is simplifiable, thus the promotion of high speed and high accuracy are attainable.

22. 发明专利

JPS62139323A CONTROL OF ION BEAM DOSAGE 失效
公开(公告)号：JPS62139323A
公开(公告)日：1987-06-23
申请号：JP27892985
申请日：1985-12-13
申请人： HITACHI LTD
发明人： ONISHI TAKESHI , ISHITANI TORU , TAMURA HIFUMI , UMEMURA KAORU , KAWANAMI YOSHIMI
IPC分类号： H01L21/265 , H01J37/317 , H01L21/027 , H01L21/30
摘要： PURPOSE:To produce the titled ion beam dosage with high precision by a method wherein a probe current is converted into frequency using a part of primary ion beams to correct beam irradiating time at each deflecting point immediately referring to the data on the conversion. CONSTITUTION:Ion beam led out of a fluid metallic ion source 7 by an electrode 8 are limited by a throttle 9 to be focussed by lenses 6a, 6b for deflection by a deflector 5 in a vacuum chamber 101. The ion current Ip to the throttle 9 is linearized to be converted into frequency f while signals to be the clock 1' of pattern producer 1 are transmitted from photocouplers 11. When the beam stop clock number is assumed to be n, the beam dosage D=n/K and f=K.Ip therefore if Ip and f are measured to calculate a constant K and the beam stop clock number n is set up, D value shall be a constant not to be fluctuated even if the Ip is fluctuated during scanning process so that the dosage may be made constant to provided processing and implantation with high precision.

23. 发明专利

JPS62139238A VOLTAGE SUPPLY DEVICE OF ELECTROSTATIC LENS 失效
公开(公告)号：JPS62139238A
公开(公告)日：1987-06-22
申请号：JP27892685
申请日：1985-12-13
申请人： HITACHI LTD
发明人： ONISHI TAKESHI , ISHITANI TORU , KAWANAMI YOSHIMI
IPC分类号： H01J37/248 , H01J37/12
摘要： PURPOSE:To omit a lens power source, an auxiliary lens so as to obtain a voltage supply device of an electrostatic lens having a simplified system, by connecting a resistance-type potential divider with a beam acceleration power source so that a variable power source for correction is connected between the divider grounding side and ground. CONSTITUTION:When voltage of a beam acceleration power source, a dividing ratio of a resistance-type potential divider, output voltage of a correction power source are defined respectively as Va, gamma, and Vs, voltage VL at an output terminal, with which an electrostatic lens is connected, becomes VL=gammaVa+(1-gamma)Vs. Therefore, even if the dividing ratio gamma is constant, the voltage VL at the output terminal, that is, the voltage supplied to the electrostatic lens can be finely adjusted by changing the output voltage Vs of the correction power source. For example, ion beams issuing from an ion source 5 are focussed on an exposure material 9 by the electrostatic lens 7. And, the lens voltage VL can be continuously changed in the range of 60kV-58kV by continuously changing the output voltage Vs of the correction power source 3 in the range of 0--5kV.

24. 发明专利

JPS61148757A CHARGED PARTICLE RAY DEVICE 失效
公开(公告)号：JPS61148757A
公开(公告)日：1986-07-07
申请号：JP27088884
申请日：1984-12-24
申请人： HITACHI LTD
发明人： TAMURA HIFUMI , NODA TAMOTSU , ONISHI TAKESHI
IPC分类号： H01J37/08 , H01J37/06 , H01J37/063 , H01J37/30
摘要： PURPOSE:To prevent any breakdown of the electric power supply and any variation of the beam which might result from electric discharge by earthing a charged-particle lead-out electrode through a resistor the resistance of which can be arbitrarily varied and using the electric potential produced by the combination of the resistor and charged particles flowing into the electrode as the lead-out voltage. CONSTITUTION:The charged particle ray device of this invention is constituted of charged particle sources 1 and 2, a control electrode 3, a charged-particle lead-out electrode 4, an accelerating electrode 5, an electrostatic lens 6 and a sample 7. The lead-out electrode 4 is earthed through a resistor 10 the resistance of which can be arbitrarily varied. The electric potential produced by the combination of the resistor 10 and charged particles flowing through the resistor 10 due to part of an ion beam 11 bumping against the periphery of the hole of the lead-out electrode 4, is directly used as the lead-out voltage of the lead-out electrode 4. Due to the above structure, electric discharge is prevented from developing among the particle sources 1 and 2 and the lead-out electrode 4 thereby preventing any beam variation. Besides, it is possible to reduce the cost of the device by omitting part of the electric power supply.

25. 发明专利

JP2001118215A MAGNETIC HEAD AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2001118215A
公开(公告)日：2001-04-27
申请号：JP2000297064
申请日：2000-09-26
申请人： HITACHI LTD
发明人： TAKANO KOJI , KOYAMA NAOKI , TANABE HIDEO , MORIWAKI HIDETOSHI , YUHITO ISAMU , SHIIKI KAZUO , ONISHI TAKESHI , ISHITANI TORU , KOBAYASHI TOSHIO , TODOKORO HIDEO
IPC分类号： G11B5/31 , G11B5/39
摘要： PROBLEM TO BE SOLVED: To provide a simply structured magnetic head capable of improving the characteristic on a noise caused by an adjacent tracks, and a magnetic head in which recording and reproducing heads are highly accurately aligned, and manufacturing method of the head having a track with set equal to 1 μm or lower, effective as a magnetic disk device head having a large storage capacity and needing high-rate data transfer. SOLUTION: This magnetic head is constructed in such a manner that a groove or a recessed part machined by converged ion beam etching is formed in the magnetic disk medium opposite surface of a recording head, and the track width of each of upper and lower magnetic poles on the recording head is regulated by the groove or the recessed part.

26. 发明专利

JP2001084507A MAGNETIC HEAD AND ITS PRODUCTION 失效
公开(公告)号：JP2001084507A
公开(公告)日：2001-03-30
申请号：JP2000263238
申请日：2000-08-28
申请人： HITACHI LTD
发明人： TAKANO KOJI , KOYAMA NAOKI , TANABE HIDEO , MORIWAKI HIDETOSHI , YUHITO ISAMU , SHIIKI KAZUO , ONISHI TAKESHI , ISHITANI TORU , KOBAYASHI TOSHIO , TODOKORO HIDEO
IPC分类号： G11B5/31 , G11B5/127 , G11B5/187
摘要： PROBLEM TO BE SOLVED: To provide a magnetic head excellent in off-track characteristic by forming a first shield layer, a magnetic resistance effect element, a second shield layer and a second recording magnetic pole while interposing an electric insulating layer between them and making the saturated magnetic flux density of the second shield layer larger than that of the first shield layer. SOLUTION: This magnetic head has the first shield layer, the magnetic resistance effect element, the second shield layer using also as a first recording magnetic pole and the second recording magnetic pole which are stacked in this order while interposing the electric insulating layer between them. In this magnetic head, the saturated magnetic flux density of the material used for forming the second shield layer is made larger than that of the material used for forming the first shield layer. It is preferable that the track widths of upper and lower magnetic poles of the surface to slide on a magnetic disc medium are made to be 1 μm or narrower and the difference between their track widths is made to be 0.1 μm or smaller. The processing to etch with a converged ion beam are carried out by converging an ion beam containing Ga.

27. 发明专利

JP2000268768A CONVERGED ION BEAM DEVICE 失效
公开(公告)号：JP2000268768A
公开(公告)日：2000-09-29
申请号：JP7314799
申请日：1999-03-18
申请人： HITACHI LTD
发明人： ONISHI TAKESHI , KOIKE HIDEMI
IPC分类号： H01J37/20 , H01J37/22 , H01J37/28 , H01J37/317 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To enable sure evaluation and analyzation of a same fault by providing means of getting an image of an scanning electronic microscope at an observation point from an external device and of displaying the image on a screen. SOLUTION: A defect position in a wafer is detected by a defect detector and it is stored as a data file. Then, the wafer is moved to a scanning electronic microscope(SEM) for observation/element analysys of an SEM image. A specified defect 50 is selected from defect information and SEM observation is carried out. The observed SEM image is stored as image information. Thereafter, the wafer is moved to a focusing ion beam device and the stage is moved to the same position as that of the SEM observed defect. After the movement of the stage, a scanning ion microscope image is obtaied and displayed on a screen. An SIM image 101 and the SEM image 102 are displayed on an FIB control screen 100. Accordingly, the shape of defect 50 can be confirmed by either one of the images to thereby attain the object.

28. 发明专利

JPH11144669A FOCUSED ION BEAM DEVICE 失效
公开(公告)号：JPH11144669A
公开(公告)日：1999-05-28
申请号：JP30392697
申请日：1997-11-06
申请人： HITACHI LTD
发明人： ONISHI TAKESHI , KOIKE HIDEKI
IPC分类号： H01J37/30
摘要： PROBLEM TO BE SOLVED: To extend an ion source replacement cycle and reduce the running cost by conducting the registration process of the ion emission state after machining completion before the machining of a focused ion beam is started, and setting ion emission to the registered state, after the machining completion. SOLUTION: In the machining registration process, the machining condition registration process setting the position and size of a machining pattern and the machining time is conducted, then the ion emission state registration process after machining is conducted. In the machining implementation process, the machining process is conducted based on the machining conditions set in advance, and the ion emission off process is conducted if the off process is set based on the registered value of the ion emission state after machining. The machining time/time machining pattern is set, for example, the machining registration process is conducted with the ion emission state after machining set to off, and the machining implementation process is activated at six o'clock p.m. When machining is completed at seven o'clock p.m. via the unmanned operation of a device, ion emission is set to off based on registration, and an ion material from seven o'clock p.m. to the next morning can be saved.

29. 发明专利

JPH10302704A CHARGED PARTICLE BEAM DEVICE 失效
公开(公告)号：JPH10302704A
公开(公告)日：1998-11-13
申请号：JP10705097
申请日：1997-04-24
申请人： HITACHI LTD
发明人： ONISHI TAKESHI
IPC分类号： H01J37/22 , H01J37/04 , H01J37/153 , H01J37/21 , H01J37/256
摘要： PROBLEM TO BE SOLVED: To make quick adjustment by selecting adjustment items, setting an adjustment level through the motion of a cursor on an image, and displaying a cursor icon in such a state as changed for the one-to-one correspondence of selectable adjustment items. SOLUTION: Buttons are arranged in sequence above a microscopic image for selecting adjustment items. Also, a mouth cursor 3 is positioned on a microscopic screen 2, and takes a form of an icon expressing a currently selected stigma. In this case, the icon changes depending on the change of a selected item. In other words, a currently selected adjustment item is recognized simply by looking at the icon of the mouth cursor 3. Also, the stigma is adjusted by two parameters; X and Y directions relative to a beam and the adjustment of an axial direction rotated by 45 degrees. Consequently, the two parameters can be concurrently adjusted and an adjustment work can be made at high operability when both of the vertical and horizontal directions of the screen 2 are made to correspond to the parameters and then a two-dimensional dragging operation is made on the screen 2.

30. 发明专利

JPH09274883A FIB/SEM COMPOUNDED APPARATUS 失效
公开(公告)号：JPH09274883A
公开(公告)日：1997-10-21
申请号：JP8120096
申请日：1996-04-03
申请人： HITACHI LTD
发明人： ONISHI TAKESHI , ISHITANI TORU
IPC分类号： H01J37/28 , H01J37/256 , H01J37/30 , H01J37/305 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To carry out SEM(scanning electron microscope) observation of a cross section of a specimen which is processed with high precision by FiB (focused ion beam) processing while preventing charging up. SOLUTION: A means to radiate beam to an electrode is installed in a SEM apparatus 2 which accelerates and converges electrons to scan a specimen 4 and forms on observation image be secondary electrons and reflected electrons generated by the specimen 4. This compounded apparatus comprises a SEM apparatus part of which a normal SEM mode and a secondary electron generating mode by irradiation of the electrode can be selectively employed, an FIB apparatus part 1 having a scanning ion microscopic function to accelerate and converge ions 11 and scan the specimen 4 and form an observation image by secondary electron signals emitted out of the specimen 4 and a function to irradiate a defined region of the specimen 4 selectively with converged ions and process the specimen 4, and a specimen chamber part 3 to hold the specimen in vacuum and the FIB 1 and the SEM 2 are so arranged as to cross respective beam axes of the FIB 1 and the SEM 2 approximately at the same position of the same specimen.

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