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21. 发明专利

JP2005101619A Inspecting method of pattern defect and inspecting device 有权
标题翻译：模式缺陷检测方法及检测手段
公开(公告)号：JP2005101619A
公开(公告)日：2005-04-14
申请号：JP2004289636
申请日：2004-10-01
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SHINADA HIROYUKI , YAJIMA YUSUKE , MURAKOSHI HISAYA , HASEGAWA MASAKI , NOZOE MARI , TAKATO ATSUKO , SUGIYAMA KATSUYA , KURODA KATSUHIRO , UMEMURA KAORU , USAMI YASUTSUGU
IPC分类号： H01L21/66 , G06T1/00 , G06T7/00 , H04N1/113
摘要： PROBLEM TO BE SOLVED: To realize the acceleration of an inspection in a device which inspects the defects of the same design patterns, foreign matter, residue or the like on a wafer in the manufacturing process of a semiconductor device with electron beams.
SOLUTION: The electron beam (area beam) having a certain area on the surface of a semiconductor sample 7 is radiated, reflected electrons from the surface of the sample are imaged by an imaging lens 11, images of a plurality of areas on the surface of the semiconductor sample 7 are obtained and are stored in image memories 18, 19, and whether there are defects and the locations of the defects in the area are measured by comparing the stored images in a plurality of the areas.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：在具有电子束的半导体器件的制造过程中，在晶片上检查在相同设计图案，异物，残留物等的缺陷的装置中实现检查的加速。解决方案：在半导体样品7的表面上具有一定面积的电子束（面积束）被辐射，来自样品表面的反射电子由成像透镜11成像，多个区域的图像获得半导体样品7的表面并存储在图像存储器18,19中，以及是否存在缺陷，并且通过比较多个区域中存储的图像来测量区域中的缺陷的位置。版权所有（C）2005，JPO＆NCIPI

22. 发明专利

JP2004349264A Inspection device using electron beam 审中-公开
标题翻译：使用电子束的检查装置
公开(公告)号：JP2004349264A
公开(公告)日：2004-12-09
申请号：JP2004218049
申请日：2004-07-27
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： IWABUCHI HIROKO , TODOKORO HIDEO , MORI HIROYOSHI , SATO MITSUGI , USAMI YASUTSUGU , ICHIHASHI MIKIO , FUKUHARA SATORU , SHINADA HIROYUKI , KANEKO YUTAKA , TAKATO ATSUKO , TOOYAMA HIROSHI , SUGIYAMA KATSUYA
IPC分类号： H01L21/66 , H01J37/20 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To provide an inspection method and an inspection device using an electron beam achieving a higher resolution, higher speed and reliability, and a reduction in size. SOLUTION: A voltage is applied to a sample via a sample stage. An electron beam is converged on the sample, and the sample is scanned. The sample stage is continuously moved during the scanning, and charged particles generated from the sample are detected to thereby detect a defect of the sample, wherein a distance between the sample stage and a shield frame is determined on the basis of a limit of discharge occurring between the sample stage and the shield frame. There is provided a coil of at least six poles for correcting the shape of the electron beam. The electron beam is deflected for blanking during movement of the sample, with the crossover of the electron beam taken as a fulcrum of blanking. The magnitude of the voltage applied to the sample is determined according to the kind of the sample. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种使用电子束实现更高分辨率，更高速度和可靠性以及尺寸减小的检查方法和检查装置。解决方案：通过样品台向样品施加电压。电子束会聚在样品上，扫描样品。在扫描期间连续地移动样品台，并且检测从样品产生的带电粒子，从而检测样品的缺陷，其中基于放电极限确定样品台与屏蔽框架之间的距离在样品台和屏蔽框架之间。提供了用于校正电子束形状的至少六极的线圈。电子束在样品移动期间被偏转以进行消隐，电子束的交叉作为消隐的支点。根据样品的种类确定施加到样品的电压的大小。版权所有（C）2005，JPO＆NCIPI

23. 发明专利

JP2004079516A Testpiece holder, semiconductor manufacturing device, semiconductor test device, and holding method of testpiece 有权
标题翻译： TESTPIECE持有人，半导体制造设备，半导体测试装置和TESTPIECE的保持方法
公开(公告)号：JP2004079516A
公开(公告)日：2004-03-11
申请号：JP2003177441
申请日：2003-06-23
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SUZUKI HIROYUKI , SHINADA HIROYUKI , TAKATO ATSUKO , USAMI YASUTSUGU , SUGIYAMA HIDEJI
IPC分类号： G01B15/04 , G01N23/225 , G01R31/302 , H01J37/20 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To enable to carry out working, analysis and inspection by preventing the deterioration of accuracy of relation between the irradiated position of an electronic beam at the tip part of the testpiece and the testpiece position. SOLUTION: By comparing height dependency of the testpiece surface of deflection correction amount at the center part of a testpiece table with that of the circumferential part of the testpiece, a deformed amount proprietary of the circumferential part of the testpiece is obtained, the height dependency of deflection correction amount is calculated after removing this from the standard mark signal of the circumferential part, the correction amount equivalent to the deflection correction amount obtained at the center part is obtained, and the deflection correction table is formed only from the standard mark of the circumferential part. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：通过防止在试件末端部分的电子束的照射位置和试件位置之间的关系精度的劣化，能够进行工作，分析和检查。＆lt; P＆gt;解决方案：通过将试件台的中心部分的挠曲校正量的试件表面的高度依赖性与试件的圆周部分的高度依赖性进行比较，获得试件周向部分专有的变形量，在从周向部分的标准标记信号中去除偏转校正量的高度依赖性之后，获得与中心部分获得的偏转校正量相当的校正量，并且仅从标准标记形成偏转校正表的圆周部分。版权所有（C）2004，JPO

24. 发明专利

JP2010257994A Inspection method and inspection device using electron beam 有权
标题翻译：使用电子束的检查方法和检查装置
公开(公告)号：JP2010257994A
公开(公告)日：2010-11-11
申请号：JP2010179920
申请日：2010-08-11
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： IWABUCHI HIROKO , TODOKORO HIDEO , MORI HIROYOSHI , SATO MITSUGI , USAMI YASUTSUGU , ICHIHASHI MIKIO , FUKUHARA SATORU , SHINADA HIROYUKI , KANEKO YUTAKA , SUGIYAMA KATSUYA , TAKATO ATSUKO , TOOYAMA HIROSHI
IPC分类号： H01J37/28 , H01J37/244 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an inspection method and device, capable of performing the inspection at a higher speed, using an electron beam.
SOLUTION: An electron beam 36 from an electron gun 1 is converged by an objective lens 9 and decelerated by a retarding voltage impressed to a sample 13; the sample 13 is scanned by the electron beam, while being moved; secondary electrons 33 generated from the sample 13 are accelerated by the retarding voltage to make a nearly parallel beam which is deflected by an E×B deflector 18, arranged between the objective lens 9 and the sample 13 and has a secondary electron generating body 19 irradiated; and second secondary electrons 20 are generated from the secondary electron generating body 19, and second detected by a charged particle detector 21. The output signal detected is stored as an image signal, and the image stored is compared in an operation section 29 and a defect determining section 30 to thereby determine defects.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供能够使用电子束以更高速度进行检查的检查方法和装置。解决方案：来自电子枪1的电子束36被物镜9会聚并通过施加到样品13的延迟电压而减速; 样品13被电子束扫描同时被移动; 从样品13产生的二次电子33被延迟电压加速，以形成由配置在物镜9和样品13之间的E×B偏转器18偏转的近似平行的光，并且具有照射的二次电子发生体19 ; 并且从二次电子发生体19产生第二二次电子20，并且由带电粒子检测器21检测出第二二次电子20.检测出的输出信号作为图像信号存储，并且在操作部29中比较存储的图像和缺陷确定部30，从而确定缺陷。版权所有（C）2011，JPO＆INPIT

25. 发明专利

JP2007189238A Semiconductor manufacturing apparatus and semiconductor testing apparatus 有权
标题翻译：半导体制造设备和半导体测试设备
公开(公告)号：JP2007189238A
公开(公告)日：2007-07-26
申请号：JP2007017242
申请日：2007-01-29
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SUZUKI HIROYUKI , SHINADA HIROYUKI , TAKATO ATSUKO , USAMI YASUTSUGU , SUGIYAMA HIDEJI
IPC分类号： H01L21/66 , H01J37/20
摘要： PROBLEM TO BE SOLVED: To enable a machining, an analysis, and tests by preventing a reduction in the accuracy of the relationship between the irradiation position of an electron beam on an end of a sample and the position of the sample.
SOLUTION: The semiconductor manufacturing or testing apparatus for irradiating a surface of a semiconductor wafer with electron beams to machine or test the sample, comprising an electrostatic chucking stage for holding the sample. The stage around the sample is almost as high as the surface of the sample when holding the sample.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过防止样品端部的电子束的照射位置与样品的位置之间的关系的精度的降低来实现加工，分析和测试。解决方案：用于用电子束照射半导体晶片的表面以加工或测试样品的半导体制造或测试装置，包括用于保持样品的静电吸附级。当样品保持时，样品周围的阶段几乎与样品表面一样高。版权所有（C）2007，JPO＆INPIT

26. 发明专利

JP2007180035A Method and apparatus for inspecting circuit pattern 有权
标题翻译：检查电路图的方法和装置
公开(公告)号：JP2007180035A
公开(公告)日：2007-07-12
申请号：JP2007000916
申请日：2007-01-09
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NOZOE MARI , SHINADA HIROYUKI , SUGIYAMA KATSUYA , TAKATO ATSUKO , HIROI TAKASHI , YOSHIMURA KAZUSHI , SUGIMOTO ARITOSHI , YODA HARUO , KURODA KATSUHIRO , USAMI YASUTSUGU , TANAKA MAKI , KANEKO YUTAKA , TOYAMA HIROSHI , INO TADAO , YAJIMA YUSUKE , ANDO MASAAKI , MAEDA SHUNJI , KUBOTA HITOSHI
IPC分类号： H01J37/28 , G01N23/225 , H01J37/20 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To rapidly, stably, and accurately inspect a circuit pattern with an insulating material in an inspection method for comparing the secondary electron images of the defects, foreign matter, and residues of the circuit pattern produced on a substrate of a semiconductor device. SOLUTION: In this circuit pattern inspection method, an electron beam image is formed on a substrate 9 to be inspected before the potential of the member of the circuit pattern is varied by radiating a heavy-current electron beam 19 onto the substrate 9 at a high speed. Before the inspection, the substrate 9 is radiated with a second charged particle beam 104 in addition to the first electron beam for forming an image for inspection to stabilize the potential of the member. Also, secondary electron detection signals are digitized before transfer to acquire high quality electron beam images with high efficiency and high SN ratio. By this inspection method, the circuit pattern with the insulating material can be inspected. Since those defects and abnormalities that cannot be detected by the prior art produced in various substrate manufacturing processes such as the semiconductor device can be found, the fraction defective in the substrate manufacturing processes can be reduced and the reliability can be enhanced. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：在用于比较在基板上产生的缺陷，异物和电路图案的残留物的二次电子图像的检查方法中，使用绝缘材料快速，稳定且准确地检查电路图案的半导体器件。解决方案：在该电路图案检查方法中，在通过将大电流电子束19辐射到基板9上来改变电路图案的部件的电位之前，在要检查的基板9上形成电子束图像以高速度。在检查之前，除了用于形成用于检查的图像的第一电子束之外，用第二带电粒子束104照射基板9以稳定该部件的电位。此外，二次电子检测信号在传送之前被数字化，以获得高效率和高SN比的高质量电子束图像。通过该检查方法，可以检查具有绝缘材料的电路图案。由于可以发现在诸如半导体器件的各种衬底制造工艺中产生的现有技术无法检测到的这些缺陷和异常，可以降低衬底制造工艺中的缺陷部分，并且可以提高可靠性。版权所有（C）2007，JPO＆INPIT

27. 发明专利

JP2006184286A Pattern inspection device 有权
标题翻译：图案检查装置
公开(公告)号：JP2006184286A
公开(公告)日：2006-07-13
申请号：JP2006001022
申请日：2006-01-06
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MURAKOSHI HISAYA , YAJIMA YUSUKE , SHINADA HIROYUKI , NOZOE MARI , TAKATO ATSUKO , UMEMURA KAORU , HASEGAWA MASAKI , KURODA KATSUHIRO
IPC分类号： G01N23/225 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a pattern inspection device and a pattern inspection method capable of inspecting a semiconductor or the like quickly.
SOLUTION: This pattern inspection device of the present invention is arranged with at least three or more of electronic optical systems, and a degree of vacuum in the vicinity of a plurality of electron sources is kept high all the time by vacuum-evacuating an electron gun chamber mounted with the plurality of electron sources independently from a sample chamber. An electric field and a magnetic field are sealed within the each electronic optical system by a shielding electrode capable of vacuum-evacuating highly an electron beam passage, a negative voltage is set to a sample to accelerate a secondary electron and a reflected electron to a direction of an electron source side in an electron beam optical axis, and the secondary electron and the reflected electron are thereby detected within the same electronic optical system. A defect is determined thereby in the pattern inspection, by comparing detection signals obtained substantially concurrently in the same circuit patterns.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供能够快速检查半导体等的图案检查装置和图案检查方法。解决方案：本发明的图案检查装置配置有至少三个以上的电子光学系统，并且通过真空抽真空将多个电子源附近的真空度始终保持较高独立于样品室安装有多个电子源的电子枪室。电场和磁场通过能够对电子束通道进行高真空抽真空的屏蔽电极密封在每个电子光学系统内，负电压被设定为样品以将二次电子和反射电子加速到方向在电子束光轴中的电子源侧，从而在同一电子光学系统内检测二次电子和反射电子。通过比较基本上以相同电路图案同时获得的检测信号，从而在图案检查中确定了缺陷。版权所有（C）2006，JPO＆NCIPI

28. 发明专利

JP2005121635A Pattern inspection device 审中-公开
标题翻译：图案检查装置
公开(公告)号：JP2005121635A
公开(公告)日：2005-05-12
申请号：JP2004255059
申请日：2004-09-02
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MURAKOSHI HISAYA , YAJIMA YUSUKE , SHINADA HIROYUKI , NOZOE MARI , TAKATO ATSUKO , UMEMURA KAORU , HASEGAWA MASAKI , KURODA KATSUHIRO
IPC分类号： G01B15/04 , G01B15/08 , G01N23/225 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a pattern inspection device and a pattern inspection method capable of inspecting a semiconductor or the like quickly.
SOLUTION: This pattern inspection device of the present invention is arranged with at least three or more of electronic optical systems, and compares detection signals obtained substantially concurrently in the same circuit fellow patterns. A degree of vacuum in the vicinity of a plurality of electron sources is kept very high all the time by vacuum-evacuating electron gun chambers mounted with the plurality of electron sources independently from a sample chamber. An electric field and a magnetic field are sealed within the each electronic optical system by a shielding electrode capable of vacuum-evacuating highly an electron beam path, and a negative voltage is set to a sample to accelerate a secondary electron and a reflected electron to a direction of an electron source side in an electron beam optical axis, so as to detect the secondary electron and the the reflected electron within the same electronic optical system. Defects are determined thereby at the same time in the pattern inspection, and a through-put of the inspection is enhanced thereby. The three or more of electron beam sources are stably operated therein under the high-vacuum condition, and accurate inspection is carried out therein.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够快速检查半导体等的图案检查装置和图案检查方法。解决方案：本发明的图案检测装置配置有至少三个以上的电子光学系统，并且比较以相同的电路图案基本同时获得的检测信号。在多个电子源附近的真空度始终通过与样品室独立地安装有多个电子源的电子枪室而真空抽真空。电场和磁场通过能够高度真空排出电子束路径的屏蔽电极密封在每个电子光学系统内，并且将负电压设置为样品以将二次电子和反射电子加速到在电子束光轴中的电子源侧的方向，以便检测同一电子光学系统内的二次电子和反射电子。因此，在图案检查中同时确定缺陷，从而增强检查的通过。三个以上的电子束源在高真空条件下稳定地工作，并且在其中进行精确的检查。版权所有（C）2005，JPO＆NCIPI

29. 发明专利

JP2005024564A Test method and test apparatus using electron beam 审中-公开
标题翻译：使用电子束的测试方法和测试装置
公开(公告)号：JP2005024564A
公开(公告)日：2005-01-27
申请号：JP2004218051
申请日：2004-07-27
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： IWABUCHI HIROKO , TODOKORO HIDEO , MORI HIROYOSHI , SATO MITSUGI , USAMI YASUTSUGU , ICHIHASHI MIKIO , FUKUHARA SATORU , SHINADA HIROYUKI , KANEKO YUTAKA , TAKATO ATSUKO , TOOYAMA HIROSHI , SUGIYAMA KATSUYA
IPC分类号： G01N23/225 , H01J37/04 , H01J37/153 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a test method and a test apparatus using an electron beam capable of heighten resolution, achieving high speeds and compactness, and improving reliability.
SOLUTION: A voltage is impressed on a sample via a sample stage. The electron beam is made convergent on the sample to scan it. The sample stage is continuously moved during the scan. When defects in the sample are detected by detecting charged particles generated from the sample, the interval size between the sample stage and a shield frame is determined based on a discharge limit which occurs between the sample stage and the shield frame. At least a hexapole coil for correcting the shape of the electron beam is provided. The crossover of the electron beam is blanked and deflected as a fulcrum of blanking during the movement of the sample. The size of a voltage impressed on the sample is determined according to the type of the sample.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供使用能够提高分辨率的电子束的测试方法和测试装置，实现高速度和紧凑性，并提高可靠性。解决方案：通过样品台对样品施加电压。使电子束收敛在样品上进行扫描。扫描期间样品台继续移动。当通过检测从样品产生的带电粒子来检测样品中的缺陷时，基于在样品台和屏蔽框架之间发生的放电极限来确定样品台和屏蔽框架之间的间隔尺寸。至少提供了用于校正电子束形状的六极线圈。在样品移动期间，电子束的交叉被消隐和偏转为消隐的支点。根据样品的类型确定施加在样品上的电压的大小。版权所有（C）2005，JPO＆NCIPI

30. 发明专利

JP2004031976A Inspection method using electron beam and inspection device 有权
公开(公告)号：JP2004031976A
公开(公告)日：2004-01-29
申请号：JP2003202164
申请日：2003-07-28
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： IWABUCHI HIROKO , TODOKORO HIDEO , MORI HIROYOSHI , SATO MITSUGI , USAMI YASUTSUGU , ICHIHASHI MIKIO , FUKUHARA SATORU , SHINADA HIROYUKI , KANEKO YUTAKA , SUGIYAMA KATSUYA , TAKATO ATSUKO , TOYAMA HIROSHI
IPC分类号： G01N23/225 , G01R31/302 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide an inspection method using electron beam which can speed up the inspection and an inspection device. SOLUTION: An electron beam 36 from an electron gun 1 is converged by an objective lens 9 and decelerated by the retarding voltage impressed to a sample 13. The sample 13 is scanned by the electron beam while moving, and the secondary electron 33 generated from the sample 13 is accelerated by the retarding voltage and becomes almost parallel beam. Then the beam is deflected by an E×B deflector 18 which is located between the objective lens 9 and the sample 13, and it irradiates a secondary electron generating body 19. A second secondary electron 20 generates from the secondary electron generating body 19, and is detected by a charged particle detector 21. The detected output signal is stored as a picture signal, and the stored picture is compared at an operation part 29 and a defect determining part 30 to determine the defect. COPYRIGHT: (C)2004,JPO

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