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21. 发明专利

JP2003273369A Manufacturing method of semiconductor device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：JP2003273369A
公开(公告)日：2003-09-26
申请号：JP2002073960
申请日：2002-03-18
申请人： Denso Corp , 株式会社デンソー
发明人： OOHARA ATSUSHI , MUTO KOJI , KANO KAZUHIKO
IPC分类号： B81B3/00 , B81C1/00 , G01P15/08 , G01P15/125 , H01L21/3065 , H01L29/84
CPC分类号： B81C1/0019 , B81C1/00579 , B81C1/00626 , B81C2201/0132 , G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： PROBLEM TO BE SOLVED: To prevent a movable portion from sticking on a portion around itself, in a manufacturing method of a semiconductor device provided with a laminate consisting of a first semiconductor layer and a second semiconductor layer laminated thereon through an insulating layer, and a movable section formed on the second semiconductor layer and being displaceable in response to application of dynamic quantity.
SOLUTION: In this method of manufacturing a semiconductor device, since an etching speed in a trench forming process is higher than that in a movable section forming process, the amount of a protective film formed on the rear surface of the movable portion 20 as a mask can be reduced in a protective film forming process. In this way, in an etching process, even if the etching ions repelled on the surface of a charged oxide film 13 collide with the rear surface of the portion 20, needle-like projections can be prevented from being formed on the rear surface of the portion 20, and the sticking between the section 20 and the film 13 can be suppressed.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了防止可动部分粘附在其周围的部分上，在通过绝缘层设置有由第一半导体层和第二半导体层层叠的层叠体的半导体器件的制造方法中以及形成在第二半导体层上并且响应于动态量的应用而可移位的可移动部分。解决方案：在这种制造半导体器件的方法中，由于沟槽形成工艺中的蚀刻速度高于可移动部分形成工艺中的蚀刻速度，所以形成在可移动部分20的后表面上的保护膜的量作为掩模可以在保护膜形成过程中减少。以这种方式，在蚀刻工艺中，即使在带电氧化膜13的表面上排斥的蚀刻离子与部分20的后表面碰撞，也可以防止在其后表面上形成针状突起部分20，并且可以抑制部分20和膜13之间的粘附。版权所有（C）2003，JPO

22. 发明专利

JP2010090809A Internal combustion engine pressure detection device 审中-公开
标题翻译：内燃机发动机压力检测装置
公开(公告)号：JP2010090809A
公开(公告)日：2010-04-22
申请号：JP2008261810
申请日：2008-10-08
申请人： Denso Corp , 株式会社デンソー
发明人： KOGA TATSURO , NISHIJIMA YOSHIAKI , KUROYANAGI MASATOSHI , TESHIGAWARA AKIHIKO , KANO KAZUHIKO , SHIBATA TAKAYUKI , HIROSE YOSHIMASA
IPC分类号： F02D35/00
摘要： PROBLEM TO BE SOLVED: To accurately detect the combustion pressure generated in a cylinder. SOLUTION: In this engine, the combustion pressure generated in the cylinder 10 is detected with the pressure sensor 50 arranged at a joining part of a cylinder head 20 and a cylinder block 30. To put it concretely, the pressure sensor 50 is arranged at a sensor notch 42 formed at a gasket member 41 put between the cylinder head 20 and the cylinder block 30. A communication notch 22 for providing communication between the inside of the cylinder 10 and the pressure sensor 50 with a space (pressure introduction port 23) without a restriction is formed on an opposing surface (lower surface) to the pressure sensor 50 at the cylinder head 20. Thus, the communication between the inside of the cylinder 10 and the pressure sensor 50 can be provided with a sufficiently large space. Then, the combustion pressure generated in the cylinder 10 can be accurately detected. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：准确地检测气缸中产生的燃烧压力。解决方案：在该发动机中，利用布置在气缸盖20和气缸体30的接合部分的压力传感器50检测气缸10中产生的燃烧压力。具体地说，压力传感器50是布置在形成在放置在气缸盖20和气缸体30之间的垫圈构件41处的传感器凹口42上。用于在气缸10的内部和压力传感器50之间提供空间（压力引入口在与气缸盖20上的压力传感器50相对的表面（下表面）上形成没有限制的部分。因此，气缸10的内部和压力传感器50之间的连通可以设置足够大的空间。然后，可以精确地检测气缸10中产生的燃烧压力。版权所有（C）2010，JPO＆INPIT

23. 发明专利

JP2004347499A Semiconductor dynamical quantity sensor 审中-公开
标题翻译：半导体动态数量传感器
公开(公告)号：JP2004347499A
公开(公告)日：2004-12-09
申请号：JP2003145877
申请日：2003-05-23
申请人： Denso Corp , 株式会社デンソー
发明人： SUGIURA MAKIKO , KANO KAZUHIKO
IPC分类号： G01P15/125 , G01P15/08 , H01L27/14 , H01L29/84
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0814
摘要： PROBLEM TO BE SOLVED: To realize compatibility between adjustment of a spring constant of a spring part by adjusting electrodes and prevention of sticking, in a capacity type acceleration sensor having the adjusting electrodes.
SOLUTION: In the acceleration sensor, the spring part 22 connected to the base part of a semiconductor substrate 10 and deformed elastically in the Y-direction in response to application of the acceleration, a movable electrode 24 connected to the spring part 22, fixed electrodes 32, 42 arranged oppositely to the movable electrode 24, and the adjusting electrodes 50 for adjusting the spring constant of the spring part 22 are formed, and the applied acceleration is detected based on the interval change between the movable electrode 24 and the fixed electrodes 32, 42 at the acceleration application time. The spring part 22 has a pair of beams 22a, 22b facing along the Y-direction, and is elastically deformed so that the interval between the pair of beams is changed, and the adjusting electrodes 50 are provided respectively on the outside of one of the pair of beams and on the outside of the other, and an electrostatic force for separating mutually the pair of beams can be applied by the adjusting electrodes 50.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：在具有调节电极的容量型加速度传感器中，通过调节电极和防止粘附来实现弹簧部件的弹簧常数的调节之间的兼容性。解决方案：在加速度传感器中，连接到半导体衬底10的基部并响应于加速度而沿Y方向弹性变形的弹簧部分22连接到弹簧部22的可动电极24 形成与可动电极24相对配置的固定电极32,42，以及用于调节弹簧部22的弹簧常数的调整电极50，并且基于可动电极24与固定电极32,42。弹簧部分22具有一对沿着Y方向的梁22a，22b，弹性变形，使得一对梁之间的间隔发生变化，调节电极50分别设置在一对光束和另一个的外部，并且可以通过调节电极50施加用于分离相应的一对光束的静电力。（C）2005年，JPO和NCIPI

24. 发明专利

JP2004212401A Semiconductor dynamic amount sensor and its manufacturing method 审中-公开
公开(公告)号：JP2004212401A
公开(公告)日：2004-07-29
申请号：JP2004034697
申请日：2004-02-12
申请人： Denso Corp , 株式会社デンソー
发明人： YAMAMOTO TOSHIMASA , TAKEUCHI YUKIHIRO , OTSUKA YOSHINORI , KANO KAZUHIKO
IPC分类号： G01P15/12 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor dynamic amount (such as acceleration) sensor which is provided with a movable electrode arranged at a predetermined interval from a semiconductor substrate and having a beam part and a grid part, and which can be improved in productivity, and also to provide its manufacturing process. SOLUTION: The movable electrode 13 comprises a grid 131 constituted of a lattice member and four beam parts 132 supporting the grid 131. The beam parts 132 are fixed onto a P type semiconductor substrate 10 via an insulating film 12. The width of each lattice is formed so as to be the same as that of the beam parts 132 (for example, about 4 μm). Thus, in manufacturing the sensor, a sacrifice layer under the grid 131 and beam parts 132 is etched so that the grid 131 can be made movable for the same time as the beam parts 132 are made movable. Accordingly, the etching can be completed in the irreducible minimum time so that the productivity can be improved. COPYRIGHT: (C)2004,JPO&NCIPI

25. 发明专利

JP2003031579A Sensor and manufacturing method therefor 审中-公开
标题翻译：传感器及其制造方法
公开(公告)号：JP2003031579A
公开(公告)日：2003-01-31
申请号：JP2001218216
申请日：2001-07-18
申请人： Denso Corp , 株式会社デンソー
发明人： KANO KAZUHIKO , TAKEUCHI YUKIHIRO
IPC分类号： G01F1/684 , G01F1/692 , H01L21/3205 , H01L23/52
CPC分类号： G01F1/692 , G01F1/6845 , H01L24/05 , H01L2224/04042 , H01L2224/45144 , H01L2224/48463 , H01L2224/4847 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a sensor where bonding properties in the bonding pad of electrode connected to the contact part of metal wiring can be improved, and to provide the manufacturing method of the sensor.
SOLUTION: Metal wirings 3 to 5 are formed on first insulation films 21 and 22, and second insulation films 23 and 24 are formed on metal wirings 3 to 5. An opening part 25 is formed in the second insulation films 23 and 24. The electrode 8 is formed in the contact part 7 via the opening part 25. The electrode 8 is pulled out to the second insulation films from the contact part 7, and a bonding pad part 8a is formed. The metal wirings 3 to 5 are formed up to the positions, corresponding to the bonding pad 8a.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种传感器，其中可以改善与金属布线的接触部分连接的电极的接合焊盘的接合性能，并提供传感器的制造方法。解决方案：金属布线3至5形成在第一绝缘膜21和22上，第二绝缘膜23和24形成在金属布线3至5上。开口部分25形成在第二绝缘膜23和24中。 8通过开口部分25形成在接触部分7中。电极8从接触部分7被拉出到第二绝缘膜，并且形成接合焊盘部分8a。金属配线3〜5形成到与焊盘8a对应的位置。

26. 发明专利

JP2013172194A Power conversion device 审中-公开
标题翻译：电源转换器件
公开(公告)号：JP2013172194A
公开(公告)日：2013-09-02
申请号：JP2012033149
申请日：2012-02-17
申请人： Denso Corp , 株式会社デンソー
发明人： SAKAI YASUYUKI , KANO KAZUHIKO , YAMADA TAKAHIRO
IPC分类号： H03K17/08 , H02M1/08 , H02M7/48
摘要： PROBLEM TO BE SOLVED: To provide a power conversion device that effectively protects a power semiconductor element from overcurrent.SOLUTION: A power conversion device 1 includes: a power semiconductor element 2; a drive circuit 3 for outputting a driving signal to control a switching action of the power semiconductor element 2; a magnetic tunnel junction element 4 for detecting an induction field generated by a controlled current flowing through the power semiconductor element 2, and changing a resistance value in accordance with the magnitude of the detected induction field; an offsetting magnet 5 for applying an offset field opposite to the induction field to the magnetic tunnel junction element 4; and a protection circuit 6 configured to stop the supply of the driving signal to the power semiconductor element 2 and cut off the power semiconductor element 2 in response to a change in the resistance value of the magnetic tunnel junction element 4 caused when the magnitude of the controlled current flowing through the power semiconductor element 2 exceeds a predetermined threshold.
摘要翻译：要解决的问题：提供有效地保护功率半导体元件免受过电流的电力转换装置。解决方案：电力转换装置1包括：功率半导体元件2; 用于输出用于控制功率半导体元件2的开关动作的驱动信号的驱动电路3; 用于检测由流过功率半导体元件2的受控电流产生的感应场的磁性隧道结元件4，以及根据检测到的感应场的大小来改变电阻值; 用于将与感应场相反的偏移场施加到磁性隧道结元件4的偏移磁体5; 以及保护电路6，被配置为停止向功率半导体元件2提供驱动信号，并且响应于当磁通道结元件4的电压值的变化引起的磁性隧道结元件4的电阻值的变化而切断功率半导体元件2 流过功率半导体元件2的受控电流超过预定阈值。

27. 发明专利

JP2009204818A Optical scanner 有权
标题翻译：光学扫描仪
公开(公告)号：JP2009204818A
公开(公告)日：2009-09-10
申请号：JP2008046119
申请日：2008-02-27
申请人： Denso Corp , 株式会社デンソー
发明人： INAGAKI YUUKI , KATO HISAYA , KANO KAZUHIKO
IPC分类号： G02B26/10 , B23K26/06 , B23K26/08 , B41J2/44 , G02B26/08
摘要： PROBLEM TO BE SOLVED: To efficiently increase angular amplitude of the vibration of a reflection part while suppressing increase in the size of an entire optical scanner. SOLUTION: The optical scanner 1 includes: a body part 11 in which a mirror face is formed on the surface; interdigital electrodes 14, 15 which are provided on the body part 11 and formed in a comb-teeth shape; interdigital electrodes 21, 22 which are meshed with the interdigital electrodes 14, 15 with a specific space apart; an interdigital driving parts 25, 26 for driving the interdigital electrodes 21, 22; and a holding part 3 for slidably holding the body part 11 and the interdigital electrodes 21, 22. By actuating the interdigital driving parts 25, 26, the interdigital electrodes 21, 22 can be vibrated relative to the holding part 3 with a prescribed frequency. As a result, the position of the interdigital electrodes 21, 22 can be changed, so that the two groups of interdigital electrodes, 14, 15 and 21, 22 are made opposite to each other depending on the positional change of the interdigital electrodes 14, 15 by the vibration of the body part 11. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了有效地增加反射部分的振动的角度振幅，同时抑制整个光学扫描仪的尺寸的增加。解决方案：光学扫描仪1包括：主体部分11，其上在表面上形成有镜面; 交叉指状电极14,15，其设置在主体部11上并形成为梳齿形状; 叉指电极21,22，其间隔指定空间与叉指电极14,15啮合; 用于驱动叉指电极21,22的叉指驱动部25,26; 以及用于可滑动地保持主体部分11和叉指电极21,22的保持部分3.通过致动叉指驱动部件25,26，可以以规定的频率相对于保持部件3振动叉指电极21,22。结果，可以改变叉指电极21,22的位置，使得两组叉指电极14,15和21,22根据叉指电极14的位置变化而相互相对， 15由身体部位11的振动。版权所有（C）2009，JPO＆INPIT

28. 发明专利

JP2008261791A Surface acoustic wave angular velocity sensor and its manufacturing method 有权
标题翻译：表面声波波导速度传感器及其制造方法
公开(公告)号：JP2008261791A
公开(公告)日：2008-10-30
申请号：JP2007106101
申请日：2007-04-13
申请人： Denso Corp , 株式会社デンソー
发明人： TESHIGAWARA AKIHIKO , KANO KAZUHIKO , ARAKAWA KAZUKI
IPC分类号： G01C19/56 , G01P9/04
摘要： PROBLEM TO BE SOLVED: To provide a surface acoustic wave angular velocity sensor of a high signal/noise ratio by suppressing reflection and scattering of surface acoustic wave by a perturbations spindle. SOLUTION: In the surface acoustic wave angular velocity sensor, by making the perturbations spindle 6 of insulating material, the interface between the perturbations spindle 6 and a piezoelectric substrate 3 is prevented from being fixed to a constant potential. Thus, electric discontinuity can be decreased, and the discontinuity of acoustic impedance can be decreased, preferably can be eliminated. Therefore, the reflection and scattering of the surface acoustic wave by the perturbations spindle 6 can be suppressed. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过抑制表面声波的扰动主轴的反射和散射来提供高信噪比的表面声波角速度传感器。解决方案：在表面声波角速度传感器中，通过使绝缘材料的扰动主轴6，扰动主轴6与压电基板3之间的界面被防止固定为恒定电位。因此，可以减小电中断，并且可以减小声阻抗的不连续性，优选可以消除。因此，可以抑制扰动主轴6的表面声波的反射和散射。版权所有（C）2009，JPO＆INPIT

29. 发明专利

JP2008026275A Surface acoustic wave angular velocity sensor 有权
标题翻译：表面声波波导速度传感器
公开(公告)号：JP2008026275A
公开(公告)日：2008-02-07
申请号：JP2006202401
申请日：2006-07-25
申请人： Denso Corp , 株式会社デンソー
发明人： ARAKAWA KAZUKI , ASAUMI KAZUSHI , TESHIGAWARA AKIHIKO , KANO KAZUHIKO
IPC分类号： G01C19/56 , G01C19/5698 , H01L41/08 , H01L41/18 , H01L41/187
摘要： PROBLEM TO BE SOLVED: To provide an angular velocity sensor capable of attaining integration with a circuit, and compactification of a size. SOLUTION: An upper electrode 6 serving as a perturbative weight is formed in a surface side of a piezoelectric membrane 4, and a lower electrode 3 is formed in a reverse face side thereof. Comb-toothed electrodes 7-10 for detection are provided in both sides of the upper electrode 6 serving as the perturbative weight. The angular velocity sensor of such constitution can vibrate the upper electrode 6 serving as the perturbative weight vertically (direction perpendicular to a substrate), by impressing a direct drive voltage to the upper electrode 6 serving as the perturbative weight. An angular velocity is detected thereby based on the vibration of the upper electrode 6 serving as the perturbative weight. Resultingly, a driving comb-toothed electrode and a reflector are not required to be arrayed along one direction around the comb-toothed electrode as the center although required in the prior art, the angular velocity sensor is compactified because only the comb-toothed electrodes 7-10 are enough to be arranged, and the integration with the circuit is allowed when constituting the angular velocity sensor together with the circuit. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够实现与电路集成的角速度传感器，以及尺寸的紧凑化。解决方案：在压电膜4的表面侧形成有作为扰动重量的上部电极6，在其背面侧形成有下部电极3。在用作扰动重量的上电极6的两侧设置用于检测的梳齿电极7-10。这种构造的角速度传感器可以通过向作为扰动重量的上电极6施加直接驱动电压来振动作为扰动重量的上电极6垂直（垂直于基板的方向）。基于用作扰动重量的上电极6的振动，从而检测角速度。因此，虽然在现有技术中是必需的，但驱动梳齿电极和反射器不需要围绕作为中心的梳齿电极的一个方向排列，所以角速度传感器被压实，因为只有梳齿电极7 -10足以配置，并且当与电路一起构成角速度传感器时允许与电路的集成。版权所有（C）2008，JPO＆INPIT

30. 发明专利

JP2008026274A Surface-acoustic-wave angular velocity sensor 有权
标题翻译：表面 - 声波波形角速度传感器
公开(公告)号：JP2008026274A
公开(公告)日：2008-02-07
申请号：JP2006202400
申请日：2006-07-25
申请人： Denso Corp , 株式会社デンソー
发明人： KANO KAZUHIKO , TESHIGAWARA AKIHIKO , ARAKAWA KAZUKI , ASAUMI KAZUSHI
IPC分类号： G01C19/56 , G01C19/5698 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/29 , H01L41/332
摘要： PROBLEM TO BE SOLVED: To provide an angular velocity sensor highly sensitive by neutralizing electric charge occurring in a piezoelectric film in the case where the angular velocity sensor is constituted through the use of a semiconductor substrate. SOLUTION: A lower electrode 4 is formed in a location opposed to a perturbation weight 6 below the piezoelectric film 5. By this constitution, it is the amount of displacements of vertical vibrations of the perturbation weight 6 is prevented from being restricted due to electric charges generated above and below the piezoelectric film 5 when the piezoelectric film 5 and the perturbation weight 6 are vertically vibrated by standing waves. Vertical vibrations of the perturbation weight 6 is thereby made greater in size and the angular velocity sensor 1 is made highly sensitive. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过使用半导体衬底构成角速度传感器的情况下，通过中和压电膜产生的电荷来提供高度敏感的角速度传感器。
解决方案：下电极4形成在与压电膜5下方的扰动重物6相对的位置。通过这种结构，扰动重量6的垂直振动的位移量被阻止受到限制当压电薄膜5和扰动重量6通过驻波垂直振动时，产生在压电薄膜5上方和下方产生的电荷。因此，扰动重量6的垂直振动的尺寸更大，角速度传感器1变得高度敏感。版权所有（C）2008，JPO＆INPIT

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