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11. 发明专利

JP3753692B2 Semiconductor integrated circuit device using mosfet and this for the open drain 有权
公开(公告)号：JP3753692B2
公开(公告)日：2006-03-08
申请号：JP2002370525
申请日：2002-12-20
申请人：ローム株式会社
发明人：雅彦園田 , 英敏西川
IPC分类号： H01L21/337 , H01L29/78 , H01L21/336 , H01L29/08 , H03K17/0814
CPC分类号： H01L29/66659 , H01L29/0847 , H01L29/7835 , H03K17/08142
摘要： In a conventional N-channel MOSFET for an open-drain circuit, when a positive static electric charge is applied to its drain, there is no route by way of which to discharge the static electric charge, resulting in a rather low static withstand voltage. To overcome this, according to the invention, an open-drain N-channel MOSFET has a drain region formed of an N-type semiconductor layer, a P-type impurity diffusion layer formed within the drain region, two high-concentration N-type impurity diffusion layers formed within the drain region so as to sandwich the P-type impurity diffusion layer, and a drain electrode connected to the P-type impurity diffusion layer and to the two high-concentration N-type impurity diffusion layers. When a positive static electric charge is applied to the drain, a parasitic transistor appears that forms a route by way of which the static electric charge is discharged.

12. 发明专利

JP3744648B2 Voltage step-down power supply circuit of the partial resonance method 失效
公开(公告)号：JP3744648B2
公开(公告)日：2006-02-15
申请号：JP13124897
申请日：1997-05-21
申请人：三星電子株式会社Samsung Electronics Co.,Ltd.
发明人：敬根李
IPC分类号： H02M3/155 , H02M1/34 , H02M3/158 , H03K17/00 , H03K17/0814
CPC分类号： H02M1/34 , H02M3/158 , H02M2001/342 , H03K17/08142 , H03K2217/0036 , Y02B70/1425 , Y02B70/1491 , Y10T307/826 , Y10T307/858

13. 发明专利

JP2005261012A Electric motor driving device 有权
标题翻译：电动马达驱动装置
公开(公告)号：JP2005261012A
公开(公告)日：2005-09-22
申请号：JP2004065552
申请日：2004-03-09
申请人： Calsonic Kansei Corp , カルソニックカンセイ株式会社
发明人： SUNAGA HIDEKI , TANAKA KAORU
IPC分类号： H02P7/29 , H03K17/0814 , H03K17/16 , H03K17/695
CPC分类号： H02P7/29
摘要： PROBLEM TO BE SOLVED: To simplify a circuit for suppressing radio signal noise (radio noise), generated accompanying switching in an electric motor driving device for making an FET switched as a switching element provided in the energizing route of the electric motor by a pulse width modulation (PWM) signal and controlling the rotational speed of the electric motor, etc. SOLUTION: A series circuit of a first capacitor 11 and a resistor 12 is connected so that the first capacitor 11 is on the gate side, and the resistor 12 is on the drain side, in between the gate and the drain of an FET 101. A second capacitor 13 is connected between the connection point of the first capacitor 11 and the resistor 12 and the terminal of the opposite side to the drain side of the electric motor 109. A CR filter circuit is formed between the gate and the drain of the first capacitor 11 and the resistor 12; and also a snubber circuit, connected to the electric motor 109 by the resistor 12 and the second capacitor 13 in parallel, is formed. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了简化用于抑制电动机驱动装置中切换的电动机的电路，该电动机驱动装置用于将作为设置在电动机的通电路径中的开关元件切换的FET切换为电动机的通电路径脉宽调制（PWM）信号并控制电动机的转速等。解决方案：第一电容器11和电阻器12的串联电路被连接，使得第一电容器11在栅极侧并且电阻器12位于FET 101的栅极和漏极之间的漏极侧。第二电容器13连接在第一电容器11的连接点和电阻器12之间，并且相对侧的端子连接到电动机109的漏极侧。在第一电容器11和电阻器12的栅极和漏极之间形成CR滤波器电路; 并且还形成了由电阻器12和第二电容器13并联连接到电动机109的缓冲电路。版权所有（C）2005，JPO＆NCIPI

14. 发明专利

JP2005160268A Inverter circuit 有权
标题翻译：逆变器电路
公开(公告)号：JP2005160268A
公开(公告)日：2005-06-16
申请号：JP2003398732
申请日：2003-11-28
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： IWAGAMI TORU , SEO MAMORU
IPC分类号： H02M7/5387 , H03K17/0814
CPC分类号： H03K17/08148 , H02M7/538 , Y10S315/07
摘要： PROBLEM TO BE SOLVED: To provide an inverter circuit capable of suppressing negative surge voltage generated while a high-voltage side switching element is turned off. SOLUTION: An inverter circuit includes IGBT3, 4 connected in series between a power supply potential Vcc and a GND potential, and HVIC1 and LVIC2 for controlling driving of the IGBT3, 4. And besides, the inverter circuit includes a capacitor 5, a diode 6, and a resistor 7. The capacitor 5 is connected between a VS terminal and the GND potential. The diode 6 is connected to the capacitor 5 in series with such a polarity that forward current runs from the GND potential toward a VS terminal within a range of the VS terminal and the GND potential. The resistor 7 is connected to the capacitor 5 in parallel. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够抑制在高压侧开关元件断开时产生的负浪涌电压的逆变器电路。解决方案：逆变器电路包括串联连接在电源电位Vcc和GND电位之间的IGBT3,4以及用于控制IGBT3,4的驱动的HVIC1和LVIC2。此外，逆变器电路包括电容器5，二极管6和电阻器7.电容器5连接在VS端子和GND电位之间。二极管6以与VS端子和GND电位的范围内的从GND电位向VS端子正向流动的极性串联连接到电容器5。电阻器7并联连接到电容器5。版权所有（C）2005，JPO＆NCIPI

16. 发明专利

JP2005027310A Fast cmos matched impedance type dc write current driver for preamplifier 审中-公开
标题翻译：快速CMOS匹配阻抗型直流写入电流驱动器
公开(公告)号：JP2005027310A
公开(公告)日：2005-01-27
申请号：JP2004194385
申请日：2004-06-30
申请人： Stmicroelectronics Inc , エスティーマイクロエレクトロニクス,インコーポレイテッド STMicroelectronics,Inc
发明人： TWARI VINEET , ALINI ROBERTO
IPC分类号： H03F3/345 , G11B5/00 , G11B5/012 , H03K17/0814 , H03K17/10
CPC分类号： H03K17/08142 , G11B5/012 , G11B2005/0013 , H03K17/102
摘要： PROBLEM TO BE SOLVED: To provide a current driver in which a limitation on a speed, safe operating area problem and a wasted current during overshoot problem are improved.
SOLUTION: A driver circuit includes a CMOS stage and switch functionalities for performing certain tasks. One task is to selectively block an exposure of the CMOS stage to a reference voltage. Another task is to selectively protect the CMOS stage during a transient operation. Yet another task is to block a leakage current flowing from the CMOS stage to a ground.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种电流驱动器，其中提高了在过冲问题中对速度，安全操作区域问题和浪费的电流的限制。
解决方案：驱动器电路包括CMOS级和用于执行某些任务的开关功能。一个任务是选择性地将CMOS级的曝光阻挡到参考电压。另一个任务是在瞬态操作期间选择性地保护CMOS级。另一个任务是阻止从CMOS级流到地的漏电流。版权所有（C）2005，JPO＆NCIPI

17. 发明专利

JP2004533713A With a ultra-low voltage power supply that is mixed, electrostatic discharge protection structure for high-speed technology 有权
公开(公告)号：JP2004533713A
公开(公告)日：2004-11-04
申请号：JP2002574199
申请日：2002-03-15
申请人：サーノフコーポレイション , サーノフヨーロップビーヴィービーエー
发明人：ジョンアーマー， , コーエンベラージェ， , マーカスマージェンス， , クリスチャンラス，
IPC分类号： H01L27/04 , H01L21/822 , H01L27/02 , H02H3/20 , H03K17/0812 , H03K17/0814 , H03K17/30
CPC分类号： H01L27/0262 , H01L27/0251 , H01L29/866 , H03K17/0812 , H03K17/0814 , H03K17/305
摘要：保護される回路構成を有する半導体集積回路（ＩＣ）１００内の静電放電（ＥＳＤ）保護回路３０２。一つの実施形態において、ＥＳＤ保護回路３０２は、該ＩＣの保護される回路の接続点への接続に適応したパッド１０４と、該パッドとアース１１２との間に結合されたＥＳＤ保護素子３０６とを備える。ダイオード・ターンオン素子３０８は、該パッドから該ＥＳＤ保護素子の第１のゲート３３６へ順方向に結合されている。第２の実施形態において、ＥＳＤ保護回路２００２は、第１の電圧供給ラインに結合されたアノード３２２と、アースに結合されたカソードとを有するＳＣＲである。寄生容量２００４は、各電圧供給ラインと、前記接地されたカソードとの間に結合されている。
【選択図】図１

18. 发明专利

JP3577316B2 Discharge protection circuit using a high voltage detection 失效
公开(公告)号：JP3577316B2
公开(公告)日：2004-10-13
申请号：JP51911695
申请日：1995-01-10
申请人：アトメル・コーポレイション
发明人：パサック，サロー , ペイン，ジェームズ・イー , ローゼンデール，グレン・エイ
IPC分类号： H03K17/0814 , H03K17/10 , H03K17/687 , H03K17/693 , H03K19/003
CPC分类号： H03K17/693 , H01L2924/0002 , H03K17/08142 , H03K17/102 , H03K19/00315 , H03K19/00361 , H01L2924/00

19. 发明专利

JP2004200601A Open-drain-oriented mosfet, and semiconductor integrated circuit device using same 有权
公开(公告)号：JP2004200601A
公开(公告)日：2004-07-15
申请号：JP2002370525
申请日：2002-12-20
申请人： Rohm Co Ltd , ローム株式会社
发明人： NISHIKAWA HIDETOSHI , SONODA MASAHIKO
IPC分类号： H01L21/337 , H01L21/336 , H01L29/08 , H01L29/78 , H03K17/0814
CPC分类号： H01L29/66659 , H01L29/0847 , H01L29/7835 , H03K17/08142
摘要： PROBLEM TO BE SOLVED: To provide an open-drain-oriented N-channel type MOSFET having a high electrostatic withstanding voltage.
SOLUTION: The open-drain-oriented N-channel type MOSFET has in its drain region comprising an N-well 11 a P-type-high-concentration-impurity diffusing layer 12 and two N-type-high-concentration-impurity diffusing layers 13, 14 interposing the P-type-high-concentration-impurity diffusing layer 12 therebetween so as to connect the P-type-high-concentration-impurity diffusing layer 12 and the two N-type-high-concentration-impurity diffusing layers 13, 14 with a drain electrode 15.
COPYRIGHT: (C)2004,JPO&NCIPI

20. 发明专利

JP2004134510A Excitation control circuit 有权
公开(公告)号：JP2004134510A
公开(公告)日：2004-04-30
申请号：JP2002296274
申请日：2002-10-09
申请人： Keihin Corp , 株式会社ケーヒン
发明人： HORAI YASUHARU
IPC分类号： H01F7/18 , H03K17/0814
CPC分类号： H03K17/08142
摘要： PROBLEM TO BE SOLVED: To provide an excitation control circuit suitably exciting and controlling a solenoid while effectively suppressing consumption current and heat generation.
SOLUTION: A coil 300 making the solenoid is driven with a drive circuit 120 in response to a pulse signal supplied from the outside. In addition, during opening operation of the solenoid, a reverse electromotive force absorption circuit 110 absorbs the reverse electromotive force of the coil 300, and a reflux circuit 130 intermittently detours reflux current IA flowing through the reverse electromotive force absorption circuit 110 as reflux current IB. Consequently, a slow attenuation region and a rapid attenuation region are properly formed in a process that excitation current IC flowing through the coil 300 is attenuated, and excitation control of the solenoid is realized while suppressing heat generation.
COPYRIGHT: (C)2004,JPO

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