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11. 发明专利

JP2005294517A Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2005294517A
公开(公告)日：2005-10-20
申请号：JP2004107153
申请日：2004-03-31
申请人： Toshiba Corp , 株式会社東芝
发明人： KAWABATA ITARU , INOUE HIROFUMI
IPC分类号： H01L27/108 , H01L21/8242 , H01L31/119
CPC分类号： H01L27/1087 , H01L27/10867
摘要： PROBLEM TO BE SOLVED: To prevent the generation of any adverse influence on the active area of a unit cell adjacent to one unit cell as much as possible, even when a semiconductor device is manufactured by arraying the unit cells with high density.
SOLUTION: Acceptor type impurity is injected from the upper part of a groove 26 of its own unit memory cell 24a of a first conductive layer 29 into a p-region under the gate electrode of an adjacent memory cell 24b, and donor type impurity such as phosphorous and arsenic is diffused to the upper outer periphery of the groove 26 including an interface 34.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：即使当通过以高密度排列单元电池制造半导体器件时，为了尽可能地防止对与单个电池单元相邻的单位电池的有源区域产生任何不利影响。解决方案：从第一导电层29的其自身的单元存储单元24a的凹槽26的上部将相应的杂质从相邻的存储单元24b的栅电极下方的p区注入，诸如磷和砷的杂质被扩散到包括界面34的槽26的上外周边。（C）2006，JPO和NCIPI

12. 发明专利

JP2005197404A Semiconductor storage device and manufacturing method therefor 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：JP2005197404A
公开(公告)日：2005-07-21
申请号：JP2004001073
申请日：2004-01-06
申请人： Toshiba Corp , 株式会社東芝
发明人： KATSUMATA RYUTA , AOCHI HIDEAKI
IPC分类号： H01L27/108 , H01L21/334 , H01L21/336 , H01L21/8242 , H01L29/786 , H01L29/94
CPC分类号： H01L29/66181 , H01L27/10823 , H01L27/10826 , H01L27/10838 , H01L27/1087 , H01L27/10876 , H01L27/10879 , H01L29/66795 , H01L29/785 , H01L29/945
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor storage device in which a retention characteristic can be improved, and to provide a manufacturing method of the device. SOLUTION: The semiconductor storage device is provided with a trench capacitor TC1 having a storage node electrode 50, a plate electrode 49, and a capacitor insulating film 70 formed of a high dielectric material which is installed in a trench formed in a main surface of a semiconductor substrate 11; an insulating gate-type field effect transistor TS1 formed in the main surface of the semiconductor substrate, a contact part which electrically connects a source S, or a drain D of the insulating gate-type field effect transistor with the storage node electrode; and cap structures 75 which are formed between the contact part and a top of the storage node electrode and a top of the capacitor insulating film in the trench, and operate as barriers inhibiting the high dielectric material of the capacitor insulating film from being diffused to the contact part. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种能够提高保持特性的半导体存储装置，并提供该装置的制造方法。解决方案：半导体存储装置设置有具有存储节点电极50，平板电极49和由高介电材料形成的电容器绝缘膜70的沟槽电容器TC1，该电介质材料安装在主要形成的沟槽中半导体衬底11的表面; 形成在半导体衬底的主表面上的绝缘栅型场效应晶体管TS1，将绝缘栅型场效应晶体管的源极S或漏极D与存储节点电极电连接的接触部分; 以及盖结构75，其形成在接触部分和存储节点电极的顶部之间以及沟槽中的电容器绝缘膜的顶部，并且用作阻挡电容器绝缘膜的高电介质材料的阻挡层扩散到接触部分。版权所有（C）2005，JPO＆NCIPI

13. 发明专利

JPH11274427A Manufacture of semiconductor storage device 有权
标题翻译：半导体存储器件的制造
公开(公告)号：JPH11274427A
公开(公告)日：1999-10-08
申请号：JP3117299
申请日：1999-02-09
申请人： Internatl Business Mach Corp , Toshiba Corp , インターナショナル・ビジネス・マシーンズ・コーポレイション , 株式会社東芝
发明人： KLEINHENZ RICHARD L , BRONNER GARY B , IBA JUNICHIRO
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L27/1087
摘要： PROBLEM TO BE SOLVED: To form an embedded plate electrode of a trench capacitor of a semiconductor memory cell with ease in a simple process.
SOLUTION: A dopant source film 114 is formed on a side wall and a bottom part of a trench 112 formed in a semiconductor substrate 100, and on the dopant source film a resist 116 is formed, which covers the trench 112. A recessed part is formed at the resist 116 so that the resist 116 in the trench 112 remains lower than the surface of the semiconductor substrate 100, and impurities are injected into the semiconductor substrate with the resist 116 as a mask. With the resist 116 as a mask, the dopant source film 114 is etched to remove the remaining resist 116, and the dopant is diffused from the impurities and the dopant source film 114 into the semiconductor substrate 100 to form an embedded plate electrode.
COPYRIGHT: (C)1999,JPO
摘要翻译：要解决的问题：以简单的方法容易地形成半导体存储单元的沟槽电容器的嵌入式板电极。解决方案：在形成在半导体衬底100中的沟槽112的侧壁和底部形成掺杂剂源膜114，并且在掺杂剂源膜上形成覆盖沟槽112的抗蚀剂116.凹部是形成在抗蚀剂116处，使得沟槽112中的抗蚀剂116保持低于半导体衬底100的表面，并且以抗蚀剂116作为掩模将杂质注入到半导体衬底中。以抗蚀剂116作为掩模，蚀刻掺杂剂源膜114以除去剩余的抗蚀剂116，并且掺杂剂从杂质和掺杂剂源膜114扩散到半导体衬底100中以形成嵌入的板电极。

15. 发明专利

JP2013535822A Method of manufacturing a separate capacitor and its structure 有权
公开(公告)号：JP2013535822A
公开(公告)日：2013-09-12
申请号：JP2013520722
申请日：2011-06-29
申请人：インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation
发明人：クォン、オジュン , リー、ジュンドン , パリース、ポール、シー , シェピス、ドミニク、ジェイ
IPC分类号： H01L21/8242 , H01L27/10 , H01L27/108
CPC分类号： H01L21/2007 , G06F17/5068 , H01L21/76224 , H01L21/7624 , H01L21/76251 , H01L21/76283 , H01L21/84 , H01L27/0207 , H01L27/10829 , H01L27/10861 , H01L27/1087 , H01L27/1203 , H01L28/40 , H01L28/90 , H01L29/66181
摘要：【課題】分離したキャパシタを製造するための構造体及び方法を提供する。
【解決手段】この方法は、ＳＯＩ及びドープされたポリ層を通って、下にある絶縁体層まで、複数のディープ・トレンチと、複数のディープ・トレンチの群又はアレイを囲む１つ又は複数の分離トレンチとを同時に形成することを含む。この方法は、複数のディープ・トレンチ及び１つ又は複数の分離トレンチを絶縁体材料でライニングすることをさらに含む。この方法は、複数のディープ・トレンチ及び１つ又は複数の分離トレンチを絶縁体材料上の導電性材料で充填することをさらに含む。ディープ・トレンチは、ディープ・トレンチ・キャパシタを形成し、１つ又は複数の分離トレンチは、ディープ・トレンチ・キャパシタの少なくとも１つの群又はアレイをディープ・トレンチ・キャパシタの別の群又はアレイから分離する、１つ又は複数の分離プレートを形成する。
【選択図】図１０

16. 发明专利

JP4880240B2 Trench capacitor and a method of forming the same using a SiGe 有权
公开(公告)号：JP4880240B2
公开(公告)日：2012-02-22
申请号：JP2005092420
申请日：2005-03-28
申请人：三星電子株式会社Samsung Electronics Co.,Ltd.
发明人：影根朴 , 承桓李 , 載順林 , 淑眞鄭 , 晟泰金 , 榮善金
IPC分类号： H01L21/8242 , H01L27/108 , H01L21/334 , H01L21/82 , H01L21/822 , H01L27/04 , H01L29/94
CPC分类号： H01L27/10867 , H01L27/10829 , H01L27/1087 , H01L29/66181 , H01L29/945

19. 发明专利

JP2006303010A Semiconductor device and its manufacturing method 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2006303010A
公开(公告)日：2006-11-02
申请号：JP2005119691
申请日：2005-04-18
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAJIMA TAKAHITO , SHINOHE MASATO
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L27/1087
摘要： PROBLEM TO BE SOLVED: To suppress the attachment of impurities to other portions than outside a lower part of a trench.
SOLUTION: After forming silica glass 26 on the lower part 4a of the trench 4, a silicon nitride film 27 is formed on the upper part 4b of the trench 4 by radical nitriding. Since the silicon nitride film 27 can be formed under a predetermined temperature condition of a low temperature (not lower than 200°C nor higher than 600°C; for example 400°C), attachment of arsenic from the silica glass 26 to the upper part 4b of the trench 4 can be prevented. By conducting a heat treatment thereafter, arsenic is diffused from the silica glass 26 to form a plate diffusion layer 5.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：抑制杂质附着到沟槽下部以外的其他部分。解决方案：在沟槽4的下部4a上形成石英玻璃26之后，通过自发渗氮在沟槽4的上部4b上形成氮化硅膜27。由于氮化硅膜27可以在低温（不低于200℃，也不高于600℃，例如400℃）的预定温度条件下形成，因此将砷从石英玻璃26附着到上层可以防止沟槽4的部分4b。此后，通过进行热处理，砷从石英玻璃26扩散，形成板扩散层5.版权所有（C）2007，JPO＆INPIT

20. 发明专利

JP2006295196A Method for manufacturing electronic element 审中-公开
标题翻译：制造电子元件的方法
公开(公告)号：JP2006295196A
公开(公告)日：2006-10-26
申请号：JP2006111855
申请日：2006-04-14
申请人： Infineon Technologies Ag , インフィネオンテクノロジーズアクチエンゲゼルシャフト
发明人： AVELLAN ALEJANDRO , HECHT THOMAS , JAKSCHIK STEFAN , SCHROEDER UWE
IPC分类号： H01L27/108 , H01L21/8242 , H01L29/78
CPC分类号： H01L28/65 , H01L27/1087 , H01L29/66181
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing an electronic element such as a DRAM semiconductor memory with which proper capacitor characteristics or recording characteristics can be obtained even if the capacitor structure is very small, or a field effect transistor.
SOLUTION: In a method for manufacturing an electronic element in which a dielectric (130) and at least one capacitor (150) having at least one connection electrode (120, 140) are formed, particularly, a DRAM semiconductor memory or a field effect transistor, in order to create a capacitor to obtain optimum capacitor characteristics even if the capacitor structure is very small, the dielectric (130) or the connection electrode (120, 140) is formed such that the occurrence of transient polarization is suppressed or at least reduced.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造诸如DRAM半导体存储器的电子元件的方法，即使电容器结构非常小也能够获得适当的电容器特性或记录特性，或场效应晶体管。解决方案：在制造其中形成电介质（130）和至少一个具有至少一个连接电极（120,140）的电容器（150）的电子元件的方法中，特别地，DRAM半导体存储器或场效应晶体管，为了形成电容器以获得最佳的电容器特性，即使电容器结构非常小，电介质（130）或连接电极（120,140）形成为使得瞬态极化的发生被抑制或至少减少版权所有（C）2007，JPO＆INPIT

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