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11. 发明专利

JP2012126976A Vacuum film forming apparatus, and film deposition method 审中-公开
标题翻译：真空膜成膜装置和薄膜沉积方法
公开(公告)号：JP2012126976A
公开(公告)日：2012-07-05
申请号：JP2010281024
申请日：2010-12-16
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OMORI MIKI , SUZUKI MINORU , HONDA KAZUHIRO , ZAMA HIDEAKI , KUBO MASASHI
IPC分类号： C23C16/455 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a vacuum film forming apparatus capable of inhibiting deterioration of a valve, a vacuum pump, etc. installed at the downstream side of a reaction chamber where a film is deposited on a substrate by alternately feeding a plurality of raw material gases.SOLUTION: The vacuum film forming apparatus 1 has: the reaction chamber where the substrate is placed; a first raw material gas supplying means for supplying a first raw material gas from a raw material supply source 22 to the reaction chamber; a second raw material gas supplying means for supplying a second raw material gas, which reacts with the first raw material gas, from a raw material supply source 42 to the reaction chamber; a raw material gas control means for controlling the flows of the first and second raw material gases so as to alternately supply the first and second raw material gases to the reaction chamber; a trap 61 to which the raw material gases discharged from the reaction chamber are supplied; and a means for achieving direct supply of the second raw material gas from the raw material supply source 42 to the trap 61 without passing through the reaction chamber.
摘要翻译：要解决的问题：提供一种能够抑制阀，真空泵等的劣化的真空成膜装置，该真空成膜装置安装在反应室的下游侧，其中膜通过交替进料而沉积在基板上多种原料气体。解决方案：真空成膜装置1具有：放置基板的反应室; 第一原料气体供给装置，用于将来自原料供给源22的第一原料气体供给至反应室; 第二原料气体供给装置，用于将与第一原料气体反应的第二原料气体从原料供给源42供给到反应室; 原料气体控制装置，用于控制第一和第二原料气体的流动，以便将第一和第二原料气体交替地供应到反应室; 从反应室排出的原料气体供给的捕集器61; 以及用于将第二原料气体从原料供给源42直接供给到捕集器61的装置，而不通过反应室。版权所有（C）2012，JPO＆INPIT

12. 发明专利

JP2009235461A Method for forming thin film, and method for manufacturing semiconductor device 有权
标题翻译：形成薄膜的方法，以及制造半导体器件的方法
公开(公告)号：JP2009235461A
公开(公告)日：2009-10-15
申请号：JP2008081164
申请日：2008-03-26
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： ZAMA HIDEAKI , ISHIKAWA MICHIO
IPC分类号： C23C16/56 , C23C16/18 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a thin film, which can decrease the resistance of a wiring structure containing a ruthenium-containing film, and to provide a thin-film-forming apparatus.
SOLUTION: The thin-film-forming apparatus transports a Ru film formed in a Ru chamber F1 to an oxidization chamber F2, and exposes the Ru film to an atmosphere of an oxidative gas to oxidize the Ru film (Step S14). The thin-film-forming apparatus also transports the oxidized Ru film to a reduction chamber F3, and exposes the Ru film to an atmosphere of a reductive gas to reduce the Ru film (Step S15).
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够降低包含含钌膜的布线结构的电阻的薄膜形成方法，并提供薄膜形成装置。解决方案：薄膜形成装置将Ru室F1中形成的Ru膜输送到氧化室F2，并将Ru膜暴露于氧化气体气氛以氧化Ru膜（步骤S14）。薄膜形成装置还将氧化的Ru膜输送到还原室F3，并将Ru膜暴露于还原气体的气氛中以减少Ru膜（步骤S15）。版权所有（C）2010，JPO＆INPIT

13. 发明专利

JP2009081432A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2009081432A
公开(公告)日：2009-04-16
申请号：JP2008226433
申请日：2008-09-03
申请人： Ube Ind Ltd , Ulvac Japan Ltd , 宇部興産株式会社 , 株式会社アルバック
发明人： ZAMA HIDEAKI , ISHIKAWA MICHIO , TSUNODA TAKUMI , HASEGAWA CHIHIRO
IPC分类号： H01L21/285 , C23C16/18 , H01L21/28 , H01L21/3205 , H01L23/52
CPC分类号： C23C16/18 , C23C16/045 , H01L21/28556 , H01L21/76843 , H01L21/76876 , H01L21/76877 , H01L29/7833
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device of which the reliability is improved by reducing the resistance of copper wiring containing a ruthenium-containing film and a copper-containing film, and to provide a method of manufacturing a semiconductor device. SOLUTION: By a CVD method using a raw material containing an organic ruthenium complex expressed by a general formula 1 and reducing gas, an Ru film is formed on a substrate on which a recess is formed (step S12). By a CVD method using a raw material containing an organic copper complex expressed by a general formula 2 and reducing gas, a Cu film is formed on the Ru film, and copper wiring is formed at the recess (step S14). COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过降低含有含钌膜和含铜膜的铜布线的电阻来提高可靠性的半导体器件的制造方法，并提供制造方法半导体器件。解决方案：通过使用包含由通式1表示的有机钌络合物的原料和还原气体的CVD方法，在其上形成有凹部的基板上形成Ru膜（步骤S12）。通过使用含有由通式2表示的有机铜络合物的原料和还原气体的CVD法，在Ru膜上形成Cu膜，在凹部形成铜配线（步骤S14）。版权所有（C）2009，JPO＆INPIT

14. 发明专利

JP2006093552A Method of forming copper wire 有权
标题翻译：形成铜线的方法
公开(公告)号：JP2006093552A
公开(公告)日：2006-04-06
申请号：JP2004279365
申请日：2004-09-27
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： WATABE MIKIO , ZAMA HIDEAKI
IPC分类号： H01L23/52 , C23C16/18 , C23C16/34 , H01L21/28 , H01L21/285 , H01L21/3205
CPC分类号： H01L21/28556 , C07C49/92 , C23C16/0272 , C23C16/045 , C23C16/18 , C23C16/34 , H01L21/76843 , H01L21/76877 , H01L23/5226 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a copper wire excellent in embedding property and adhesiveness with an underlying layer by applying a CVD method. SOLUTION: On a board surface where a hole and a groove are formed, the underlying layer consisting of a vanadium or titanium containing film by the CVD method using: tetrakisdiethyl amino vanadium, tetrakisdimethyl amino vanadium, tetrakis ethyl/methyl amino vanadium, tetrakisdiethyl amino titanium, tetrakisdimethyl amino titanium and tetrakis ethyl/methyl amino titanium as metal materials; and tertiarybutylhydrazine, NH 3 , H 2 , SiH 4 and S i 2H 6 as reducing gas. On this underlying layer, a copper containing film is formed by the CVD method, and the hole and groove are embedded to form a wire. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种通过施加CVD方法形成具有优异的嵌入性和与下层粘合性的铜线的方法。解决方案：在形成孔和槽的板表面上，通过CVD方法由含钒或钛的膜组成的下层：四十二乙基氨基钒，四（二甲基氨基）钒，四乙基/甲基氨基钒，四十二乙基氨基钛，四（二甲基氨基）钛和四乙基/甲基氨基钛作为金属材料; 和叔丁基肼，NH 3 SB 3，H SB 2，SBH 4，SB 4和SB SB 6。 >作为还原气体。在该底层上，通过CVD法形成含铜膜，并且嵌入孔和沟槽以形成导线。版权所有（C）2006，JPO＆NCIPI

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