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11. 发明专利

JP2013239730A Optical semiconductor device 有权
标题翻译：光学半导体器件
公开(公告)号：JP2013239730A
公开(公告)日：2013-11-28
申请号：JP2013147204
申请日：2013-07-16
申请人： Toshiba Corp , 株式会社東芝
发明人： KOIZUMI HIROSHI , OKADA YASUHIDE , OBATA SUSUMU , NAKA TOMOMICHI , HIGUCHI KAZUTO , SHIMOKAWA KAZUO , SUGIZAKI YOSHIAKI , KOJIMA AKIHIRO
IPC分类号： H01L33/50 , H01L33/54
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device which enables the mass production at low costs and also enables the downsizing at the same level as a semiconductor light emitting element.SOLUTION: An optical semiconductor device includes: a light emitting layer 2 including a semiconductor lamination body separated from a growth substrate; first and second electrodes 7a, 7b formed on a second main surface of the light emitting layer; a translucent layer 5 provided on a first main surface; a fluorescent layer provided on the translucent layer; first and second metal posts 8a, 8b provided on the first and second electrodes; and a sealing layer 10 which is provided on the second main surface and is made of a material shielding light emitted from the light emitting layer, the sealing layer sealing the first and second metal posts and covering a side surface of the light emitting layer. A side surface of the translucent layer has a portion that is not covered by the fluorescent layer and the sealing layer. A part of the light emitted from the light emitting layer penetrates the translucent layer and is subject to wavelength conversion in the fluorescent layer to be emitted to the exterior. The other part of the light emitted from the light emitting layer penetrates the translucent layer to be emitted to the exterior from the side surface of the translucent layer.
摘要翻译：要解决的问题：提供一种能够以低成本进行批量生产并且还能够使与半导体发光元件处于相同水平的小型化的光学半导体器件。解决方案：一种光学半导体器件包括：发光层2，包括：半导体层叠体与生长衬底分离; 形成在发光层的第二主表面上的第一和第二电极7a，7b; 设置在第一主表面上的半透明层5; 设置在所述半透明层上的荧光层; 设置在第一和第二电极上的第一和第二金属柱8a，8b; 以及密封层10，其设置在第二主表面上并且由屏蔽从发光层发射的光的材料制成，密封层密封第一和第二金属柱并覆盖发光层的侧表面。半透明层的侧面具有不被荧光层和密封层覆盖的部分。从发光层发射的光的一部分穿透半透明层并在荧光层中进行波长转换以发射到外部。从发光层发射的光的另一部分透过半透明层，从半透明层的侧面发射到外部。

12. 发明专利

JP2013191900A Semiconductor light-emitting device and method of manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：JP2013191900A
公开(公告)日：2013-09-26
申请号：JP2013141322
申请日：2013-07-05
申请人： Toshiba Corp , 株式会社東芝
发明人： NISHIUCHI HIDEO , HIGUCHI KAZUTO , OBATA SUSUMU , NAKAYAMA TOSHIYA
IPC分类号： H01L33/62 , H01L33/32 , H01L33/38
CPC分类号： H01L2224/16
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device that highly maintains the connectivity of an electrode and is suitable for downsizing, and to provide a method of manufacturing the same.SOLUTION: There is provided a semiconductor light-emitting device including a light-emitting portion 10d, a first conductive portion 30a, an insulating layer 20, a second conductive portion 30b, and a sealing portion 50. The light-emitting portion includes: a semiconductor stack 10 including a first semiconductor layer, a light-emitting layer, and a second semiconductor layer; and first and second electrodes 14 and 15 connected to the first and second semiconductor layers on a second primary surface 10a side. The first conductive portion includes a first pillar portion 31a connected to the first electrode and covering a part 12p of the second semiconductor layer while being spaced apart from the second semiconductor layer. The insulating layer 20 is provided between the second semiconductor layer and the first pillar portion. The second conductive portion is connected to the second electrode and is vertically arranged on the second primary surface. The sealing portion covers side surfaces of the first and second conductive portions.
摘要翻译：要解决的问题：提供一种高度保持电极的连接性并适合于缩小尺寸的半导体发光器件，并提供其制造方法。解决方案提供一种半导体发光器件，其包括：发光部分10d，第一导电部分30a，绝缘层20，第二导电部分30b和密封部分50.发光部分包括：半导体堆叠10，包括第一半导体层，发光层和第二半导体层; 以及在第二主表面10a侧连接到第一和第二半导体层的第一和第二电极14和15。第一导电部分包括连接到第一电极并且与第二半导体层间隔开的第二半导体层的一部分12p的第一柱部分31a。绝缘层20设置在第二半导体层和第一柱部之间。第二导电部分连接到第二电极并且垂直地布置在第二主表面上。密封部分覆盖第一和第二导电部分的侧表面。

13. 发明专利

JP2013065773A Semiconductor light-emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2013065773A
公开(公告)日：2013-04-11
申请号：JP2011204529
申请日：2011-09-20
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMOKAWA KAZUO , OBATA SUSUMU , HIGUCHI KAZUTO
IPC分类号： H01L33/10
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having high efficiency.SOLUTION: A semiconductor light-emitting element includes a substrate, a stack, a first electrode, a second electrode, and a reflective layer. The substrate has a primary surface. The stack includes a first semiconductor layer, a light-emitting part, and a second semiconductor layer. The first semiconductor layer is provided on the primary surface, has a first portion and a second portion in juxtaposition with the first portion, and is a first conductivity type. The light-emitting part is provided on the second portion. The second semiconductor layer is provided on the light-emitting part and is a second conductivity type. The first electrode is provided on the first portion of the first semiconductor layer. The second electrode is provided on the second semiconductor layer. The reflective layer covers the side surfaces of the substrate and the side surfaces of the stack, and has reflectiveness to emission light emitted from the light-emitting part.
摘要翻译：要解决的问题：提供一种效率高的半导体发光元件。解决方案：半导体发光元件包括衬底，堆叠，第一电极，第二电极和反射层。基底具有主表面。堆叠包括第一半导体层，发光部分和第二半导体层。第一半导体层设置在主表面上，具有与第一部分并置的第一部分和第二部分，并且是第一导电类型。发光部设置在第二部分上。第二半导体层设置在发光部上，是第二导电型。第一电极设置在第一半导体层的第一部分上。第二电极设置在第二半导体层上。反射层覆盖基板的侧表面和叠层的侧表面，并且对从发光部分发射的发射光具有反射性。版权所有（C）2013，JPO＆INPIT

14. 发明专利

JP2013042191A Semiconductor light-emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：JP2013042191A
公开(公告)日：2013-02-28
申请号：JP2012263232
申请日：2012-11-30
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGIZAKI YOSHIAKI , KOJIMA AKIHIRO , OBATA SUSUMU
IPC分类号： H01L33/48 , H01L33/52 , H01L33/62
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device capable of obtaining suitable color tone.SOLUTION: A semiconductor light-emitting device comprises: a semiconductor layer that does not include a substrata, but includes a light-emitting layer, and has a first primary surface and a second primary surface located on the opposite side of the first primary surface; an n-side electrode and a p-side electrode that are provided in the semiconductor layer; an n-side wiring layer that is connected to the n-side electrode; a p-side wiring layer that is connected to the p-side electrode; resin that is provided between the n-side wiring layer and the p-side wiring layer so as to contact the n-side wiring layer and the p-side wiring layer; a light-shielding material that is provided outside the semiconductor layer.
摘要翻译：解决的问题：提供能够获得合适的色调的半导体发光装置。解决方案：半导体发光器件包括：半导体层，其不包括基底，但包括发光层，并且具有第一主表面和第二主表面，所述第一主表面和第二主表面位于第一主表面设置在所述半导体层中的n侧电极和p侧电极; 与n侧电极连接的n侧配线层; 与p侧电极连接的p侧配线层; 树脂，其设置在n侧布线层和p侧布线层之间以与n侧布线层和p侧布线层接触; 设置在半导体层外侧的遮光材料。版权所有（C）2013，JPO＆INPIT

15. 发明专利

JP2012212871A Semiconductor light-emitting device and method of manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：JP2012212871A
公开(公告)日：2012-11-01
申请号：JP2012052247
申请日：2012-03-08
申请人： Toshiba Corp , 株式会社東芝
发明人： OBATA SUSUMU , HIGUCHI KAZUTO , NISHIUCHI HIDEO , KIMURA AKIYA , NAKAYAMA TOSHIYA , SUGIZAKI YOSHIAKI , KOJIMA AKIHIRO , AKIMOTO YOSUKE
IPC分类号： H01L33/38
CPC分类号： H01L33/62 , H01L33/486 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device that has a small size and high convenience and can improve the manufacturing yield, and to provide a method of manufacturing the same.SOLUTION: A semiconductor light-emitting device comprises: a stack including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer; a first wiring layer connected to the first semiconductor layer; a second wiring layer connected to the second semiconductor layer; a first pillar connected to the first wiring layer; a second pillar connected to the second wiring layer; and an insulating layer covering the first wiring layer, the second wiring layer, the first pillar, and the second pillar. The first pillar has a first monitor pad exposed on a surface of the insulating layer, and the first wiring layer has a first bonding pad exposed on a side surface of the insulating layer. The second pillar has a second monitor pad exposed on the surface of the insulating layer, and the second wiring layer has a second bonding pad exposed on the side surface of the insulating layer.
摘要翻译：解决的问题：提供一种尺寸小，便利性高，可以提高制造成品率的半导体发光装置，并提供其制造方法。解决方案：半导体发光器件包括：包括第一半导体层，第二半导体层和发光层的堆叠; 连接到第一半导体层的第一布线层; 连接到第二半导体层的第二布线层; 连接到第一布线层的第一柱; 连接到第二布线层的第二柱; 以及覆盖所述第一布线层，所述第二布线层，所述第一柱和所述第二柱的绝缘层。第一支柱具有暴露在绝缘层的表面上的第一监视器焊盘，并且第一布线层具有暴露在绝缘层的侧表面上的第一焊盘。第二支柱具有暴露在绝缘层的表面上的第二监视器焊盘，第二布线层具有暴露在绝缘层的侧表面上的第二焊盘。版权所有（C）2013，JPO＆INPIT

16. 发明专利

JP2011253925A Method of manufacturing light-emitting device 审中-公开
标题翻译：制造发光装置的方法
公开(公告)号：JP2011253925A
公开(公告)日：2011-12-15
申请号：JP2010126575
申请日：2010-06-02
申请人： Toshiba Corp , 株式会社東芝
发明人： KOJIMA AKIHIRO , SUGIZAKI YOSHIAKI , OBATA SUSUMU , NISHIUCHI HIDEO
IPC分类号： H01L33/48
CPC分类号： H01L33/0079 , H01L33/0075 , H01L33/486 , H01L2224/16 , H01L2933/0066
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a light-emitting device having excellent mass productivity, without complication of a manufacturing process.SOLUTION: The method of manufacturing a light-emitting device comprises: a step (S110) of laminating a semiconductor layer having a light-emitting layer on a substrate 10 to form a first structure; a step (S120) forming a first electrode and a second electrode on the semiconductor layer; a step (S130) of forming a first metal pillar conducting to the first electrode and a second metal pillar conducting to the second electrode on the semiconductor layer; a step (S140) of filling a resin between the first metal pillar and the second metal pillar; and a step (S150) of removing the substrate from the semiconductor layer supported with the resin, thereby forming a second structure with a convex shape on the opposite side of the resin.
摘要翻译：要解决的问题：提供一种制造具有优异的批量生产率的发光装置的方法，而不需要制造过程的复杂性。解决方案：制造发光器件的方法包括：在衬底10上层叠具有发光层的半导体层以形成第一结构的步骤（S110）; 在所述半导体层上形成第一电极和第二电极的工序（S120）形成向所述第一电极导通的第一金属柱的步骤（S130）和在所述半导体层上向所述第二电极导通的第二金属柱; 在第一金属柱和第二金属柱之间填充树脂的台阶（S140）以及从由树脂支撑的半导体层去除衬底的步骤（S150），从而在树脂的相对侧上形成具有凸形的第二结构。版权所有（C）2012，JPO＆INPIT

17. 发明专利

JP2011177861A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2011177861A
公开(公告)日：2011-09-15
申请号：JP2010046561
申请日：2010-03-03
申请人： Toshiba Corp , 株式会社東芝
发明人： OBATA SUSUMU , SOGO TAKAHIRO , ASANO YUSAKU , MIYAGI TAKESHI
IPC分类号： B81B7/02
CPC分类号： H01L29/84 , H01L2224/11
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device to reduce a manufacturing time by preventing an unnecessary increase of a number of manufacturing steps while adapting a device structure which delivers a full performance of a MEMS (micro-electro-mechanical systems) device. SOLUTION: The semiconductor device includes: a substrate 2; an organic insulating film 3 which is disposed on the substrate 2; an inorganic insulating film 4 which is formed thinner than the organic insulating film 3 on the organic insulating film 3; a through-hole 7 which is formed on the inorganic insulating film 4 and formed by penetrating a hollow sealing structure 6 sealing a MEMS element 5 in an internal hollow thereof, the organic insulating film 3 and the inorganic insulating film 4; a conductive ember 8 which electrically connects an electrode formed at the substrate 2 and the MEMS element 5 due to a filling of the conductive member 8 in the through-hole 7. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供半导体器件，通过防止不必要地增加多个制造步骤来减少制造时间，同时适应提供全部性能的MEMS（微机电系统）的器件结构，设备。解决方案：半导体器件包括：衬底2; 设置在基板2上的有机绝缘膜3; 比有机绝缘膜3上的有机绝缘膜3薄的无机绝缘膜4; 形成在无机绝缘膜4上的通孔7，其穿过密封内部空心中的MEMS元件5的中空密封结构6，有机绝缘膜3和无机绝缘膜4; 由导电构件8填充在通孔7中而将形成在基板2处的电极和MEMS元件5电连接的导电填料8。（C）2011，JPO＆INPIT

18. 发明专利

JP2009178815A Micromachine apparatus and method for manufacturing the same 审中-公开
标题翻译：微生物装置及其制造方法
公开(公告)号：JP2009178815A
公开(公告)日：2009-08-13
申请号：JP2008021407
申请日：2008-01-31
申请人： Toshiba Corp , 株式会社東芝
发明人： INOUE MICHINOBU , OBATA SUSUMU , MIYAGI TAKESHI
IPC分类号： B81B3/00 , B81C1/00 , H01H59/00
摘要： PROBLEM TO BE SOLVED: To provide a micromachine apparatus capable of reducing the noise of an output signal by suppressing the vibration of the micromachine, and a method for manufacturing the same.
SOLUTION: The micromachine apparatus 1 includes: substrates 11, 12; a MEMS element 16 mounted on the substrates 11, 12, provided with a mechanism to deform with the application of an electric field, and having electric characteristics varying with the deformation; a first sealing element 21 mounted on the main face of the substrates 11, 12, for covering the MEMS element 16 through a hollow portion 17 accommodating gas, having a first open-shaped portion 21a to communicate the hollow portion 17 side with the outside, and being deformable due to differential pressure between the hollow portion 17 side and the outside; a second sealing element 22 for blocking the first open-shaped portion 21a on the first sealing element 21 and provided with a second open-shaped portion 22a to communicate the hollow portion 17 side with the outside in a position offset from the first open-shaped portion 21a; and a third sealing element 23 film-formed on the second sealing element 22 and for sealing the first open-shaped portion 21a and the second open-shaped portion 22a.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够通过抑制微型机械的振动来降低输出信号的噪声的微机械装置及其制造方法。解决方案：微机械装置1包括：基板11,12; 安装在基板11,12上的MEMS元件16，其具有随着电场施加而变形的机构，并且具有随变形而变化的电特性; 安装在基板11,12的主面上的第一密封元件21，用于通过容纳气体的中空部分17覆盖MEMS元件16，该第一密封元件具有将中空部分17侧与外部连通的第一开口部分21a，并且由于中空部17侧和外侧之间的压差而变形; 第二密封元件22，用于阻挡第一密封元件21上的第一开口部分21a，并且设置有第二开口部分22a，以将中空部分17侧与外部连接在偏离第一开口形状的位置部分21a; 以及第三密封元件23，其被膜形成在第二密封元件22上并用于密封第一开口部分21a和第二开口部分22a。版权所有（C）2009，JPO＆INPIT

19. 发明专利

JP2008010564A Optical semiconductor device, and its manufacturing method 审中-公开
标题翻译：光学半导体器件及其制造方法
公开(公告)号：JP2008010564A
公开(公告)日：2008-01-17
申请号：JP2006178276
申请日：2006-06-28
申请人： Toshiba Corp , 株式会社東芝
发明人： UKITA YASUNARI , KOBARIGAWA TAKASHI , TATEYAMA KAZUKI , KOMATSU IZURU , OBATA SUSUMU
IPC分类号： H01L33/60 , H01L33/62 , H01L33/64
CPC分类号： H01L24/29 , H01L24/83 , H01L2224/29298 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device reducing a thermal resistance at the place of the connection of a light-emitting element, and improving a reliability on a junction between the light-emitting element and a connection by using conductive paste, when the light-emitting element is connected to the connection through conductive paste.
SOLUTION: The optical semiconductor device has a package 2, the connection 4 fitted in the package 2, the light-emitting element 6 connected to the connection 4, and conductive paste 7 interposed between the connection 4 and the light-emitting element 6. A recess 11 having an area smaller than that of the light-emitting element 6 is formed at a place contained in a face opposed to the light-emitting element 6 in the connection 4.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种降低发光元件连接位置处的热阻的光半导体器件，并且通过使用导电的方式提高发光元件与连接之间的连接处的可靠性当发光元件通过导电膏连接到连接时粘贴。解决方案：光学半导体器件具有封装2，安装在封装2中的连接4，连接到连接4的发光元件6和插入在连接4和发光元件之间的导电膏7 在连接4中与发光元件6相对的面上包含的一个位置处形成面积小于发光元件6的面积的凹部11.（C）2008年， JPO＆INPIT

20. 发明专利

JP2015060964A 半導体発光装置有权
标题翻译：半导体发光器件
公开(公告)号：JP2015060964A
公开(公告)日：2015-03-30
申请号：JP2013194108
申请日：2013-09-19
申请人：株式会社東芝 , Toshiba Corp
发明人： OBATA SUSUMU , FUJII TAKAYOSHI , HIGUCHI KAZUTO , KOJIMA AKIHIRO
IPC分类号： H01L33/60 , H01L33/46
CPC分类号： H01L33/405 , H01L33/385 , H01L33/42 , H01L33/502
摘要：【課題】実施形態は、高効率の半導体発光装置を提供する。【解決手段】実施形態に係る半導体発光装置は、発光層を含む積層体と、前記積層体の上に設けられた第1および第2電極と、前記積層体、前記第1および第2電極を覆う絶縁層と、前記第1電極に電気的に接続された第第1再配線と、前記第2電極に電気的に接続された第2再配線と、前記積層体の側面を覆う遮光部と、前記第1再配線の上に設けられた第1ピラーと、前記第2再配線の上に設けられた第2ピラーと、前記第1ピラーの端部及び前記第2ピラーの端部を露出させて、前記積層体および前記第1ピラー、前記第2ピラーを覆う封止部と、を備える。前記第1再配線、前記第2再配線および前記遮光部は、前記絶縁層に接する面に前記発光層の放射光に対する反射率が80パーセント以上の部材を含む。【選択図】図1
摘要翻译：要解决的问题：提供一种高效率的半导体发光器件。解决方案：一种半导体发光器件包括：包括发光层的层压体; 设置在层叠体上的第一和第二电极; 覆盖层叠体和第一和第二电极的绝缘层; 电连接到第一电极的第一重新布线; 电连接到第二电极的第二重新布线; 覆盖层叠体的侧面的遮光部; 在第一次重新布线时提供的第一个支柱; 在第二次重新布线上提供的第二个支柱; 以及密封部，其暴露第一柱的端部和第二柱的端部，并且覆盖层叠体，第一柱和第二柱。第一重新布线，第二重新布线和遮光部分在与绝缘层接触的表面上包括与发光层的发射光具有80％以上的反射率的分量。

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