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11. 发明专利

JP2006032992A Manufacturing method of semiconductor device, and substrate treating apparatus 有权
标题翻译：半导体器件的制造方法和衬底处理器件
公开(公告)号：JP2006032992A
公开(公告)日：2006-02-02
申请号：JP2005298431
申请日：2005-10-13
申请人： Toshiba Corp , 株式会社東芝
发明人： TAKEISHI TOMOYUKI , HAYAZAKI KEI , KAWANO KENJI , ITO SHINICHI , EMA TATSUHIKO
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To suppress a flow of a reaction product when causing a radical molecule/atom, such as a OH-radical or an O-radical to react with a resin film by means of optical excitation.
SOLUTION: A manufacturing method of a semiconductor device includes steps of forming a resin film on the main surface of a substrate to be treated; contacting an atmosphere containing a molecule generating a OH-radical and/or an O-radical, by being irradiated by ultra violet light, to the main surface of the substrate to be treated; irradiating ultra-violet light on the main surface of the substrate to be treated; generating OH-radicals and/or O-adicals from molecules by the use of ultra-violet light, generating reaction products by reacting the generated OH-radicals and/or O-radicals and the resin film; and cooling the substrate to be treated to a temperature, at which the generated reaction product will not flow, when being irradiated by ultraviolet light.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：待解决的问题：当通过光激发使OH自由基或O-自由基等自由基分子/原子与树脂膜反应时，抑制反应产物的流动。解决方案：半导体器件的制造方法包括以下步骤：在待处理衬底的主表面上形成树脂膜; 通过用紫外光照射产生OH-基和/或O-自由基的分子的气氛与待处理的基材的主表面接触; 在待处理的基板的主表面上照射紫外光; 通过使用紫外光从分子产生OH-基和/或O-亚烷基，通过使所产生的OH-基和/或O-自由基和树脂膜反应产生反应产物; 并且当被紫外线照射时，将待处理的基板冷却至产生的反应产物不会流动的温度。版权所有（C）2006，JPO＆NCIPI

12. 发明专利

JP2003297725A Solid film forming method 有权
标题翻译：固体膜形成方法
公开(公告)号：JP2003297725A
公开(公告)日：2003-10-17
申请号：JP2002100516
申请日：2002-04-02
申请人： Toshiba Corp , 株式会社東芝
发明人： ITO SHINICHI , EMA TATSUHIKO , YAMADA NOBUHIDE , NAKADA RENPEI , OKUMURA KATSUYA
IPC分类号： G03F7/039 , G03F7/16 , G03F7/26 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method for easily forming a solid film the composition of which differs in the direction of a film thickness.
SOLUTION: The method comprises a process for forming a liquid film 102 composed of a solution in which a first substance containing more than one material is dissolved in a solvent on a substrate 101, a process for removing the solvent from the liquid film 102, a process for supplying a solution 103, in which a second material containing more than one material is dissolved, to the liquid film in a state that the solvent remains on the surface layer of a liquid film 102a, and a process for removing the solvent remaining in a liquid film 103a and forming a solid film 110.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种容易形成固体膜的方法，其组成不同于膜厚度的方向。解决方案：该方法包括一种用于形成由其中含有多于一种材料的第一物质溶解在基材101上的溶剂中的溶液构成的液膜102的方法，从液膜中除去溶剂的方法如图102所示，在溶剂保留在液膜102a的表面层上的状态下，向溶液中提供溶解有多于一种材料的第二材料的溶液103的方法，溶剂残留在液膜103a中并形成固体膜110。版权所有（C）2004，JPO

13. 发明专利

JP2002110664A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2002110664A
公开(公告)日：2002-04-12
申请号：JP2000294982
申请日：2000-09-27
申请人： TOSHIBA CORP
发明人： YAMADA NOBUHIDE , ITO SHINICHI , EMA TATSUHIKO , NAKADA RENPEI
IPC分类号： G03F7/16 , B05D1/40 , B05D3/06 , G03F7/38 , H01L21/027 , H01L21/312 , H01L21/316 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To form an application film whose film thickness is uniform to the peripheral part of a region, where the application film is formed. SOLUTION: Liquid raw material, obtained by dissolving polymethyl siloxane (film raw material) in propylene glycol monoethyl ether (solvent), is applied on a substrate. A liquid film is formed on the substrate and solvent is volatilized, while the substrate is rotated at a rate of 100RPM.

14. 发明专利

JP2002110513A LIQUID FILM DRYING METHOD AND DEVICE THEREOF 失效
公开(公告)号：JP2002110513A
公开(公告)日：2002-04-12
申请号：JP2000296089
申请日：2000-09-28
申请人： TOSHIBA CORP
发明人： EMA TATSUHIKO , ITO SHINICHI , OKUMURA KATSUYA
IPC分类号： G03F7/38 , F26B5/04 , G03F7/16 , H01L21/00 , H01L21/027 , H01L21/30
摘要： PROBLEM TO BE SOLVED: To increase uniformity in film thickness, and at the same time to control treatment time for improving throughput in a liquid film drying method for removing a solvent in a liquid film formed on a substrate to be treated. SOLUTION: This liquid film drying method includes a process for providing a through hole 204, and for allowing a rectifying plate 200 to come close to the substrate 101 to be treated at distance where the rectifying plate 200 does not come into contact with the liquid film; a process for rotating the rectifying plate 200 for generating the air current between the substrate 101 to be treated and the lower surface of the rectifying plate 200; and a process for bringing the liquid film containing a dissolved substance into contact with the air current, for removing the solvent in the liquid film, and for forming a solid-phase film made of the dissolved substance on the substrate 101 to be treated.

15. 发明专利

JP2002110512A FILM FORMATION METHOD AND DEVICE THEREOF 失效
公开(公告)号：JP2002110512A
公开(公告)日：2002-04-12
申请号：JP2000295232
申请日：2000-09-27
申请人： TOSHIBA CORP
发明人： EMA TATSUHIKO , ITO SHINICHI
IPC分类号： G03F7/16 , B05C5/02 , B05C11/10 , B05D3/00 , H01L21/027 , H01L21/20 , H01L21/30
摘要： PROBLEM TO BE SOLVED: To suppress the generation of film thickness distribution in an application film, and at the same time to shorten time for forming the application film. SOLUTION: A liquid film formation section is composed of a resist dropping nozzle 102, a nozzle movement mechanism not shown in a figure that moves the resist dropping nozzle 102 in a y direction (a horizontal direction on page space), and the movement rest of the substrate 110 to be treated not shown in the figure where the substrate 110 to be treated having a diameter of 200 mm is installed and is moved in an x direction. A liquid film drying section is composed of a suction nozzle 101, and a vacuum pump 103 connected to the suction nozzle 101. Also, the movement rest of the substrate to be treated is also one of the components of the liquid film drying section.

16. 发明专利

JPH11325843A SHAPE MEASUREMENT METHOD 失效
公开(公告)号：JPH11325843A
公开(公告)日：1999-11-26
申请号：JP12743698
申请日：1998-05-11
申请人： TOSHIBA CORP
发明人： EMA TATSUHIKO , IBA JUNICHIRO , ITO SHINICHI
IPC分类号： G01B11/24
摘要： PROBLEM TO BE SOLVED: To perform accurate shape evaluation to a sample to be measured composed of a multi-layer film. SOLUTION: This method is provided with a method for acquiring the intensity distribution of the height direction of light, based on the reflected light at the samples 11 and 12 to be measured of the light irradiated through an optical system to the samples, the process for extracting the position information of the height direction corresponding to a peak value when the acquired intensity of the light is larger than a prescribed value and the process for correcting the extracted position information of the height direction by correction information using the optical constant of the constituting material of the samples. It is preferable that the light based on the reflected light is the light for which the reflected light from the samples is made into a narrow band.

17. 发明专利

JPH11297607A PATTERN FORMING METHOD 失效
公开(公告)号：JPH11297607A
公开(公告)日：1999-10-29
申请号：JP10480398
申请日：1998-04-15
申请人： TOSHIBA CORP
发明人： ITO SHINICHI , NAKAMURA HIROKO , EMA TATSUHIKO , OKUMURA KATSUYA
IPC分类号： H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide an excellent resist pattern configuration. SOLUTION: This pattern forming method comprises a process forming a first photosensitive resin film 12 on a substrate 11 to be worked, a process forming a latent image 13 by exposing a desired region of the first resin film 12 to a light, a process forming a second resin film 14 soluble in developer for the first resin film on the first resin film 12 on which the latent image is formed, a process developing the first resin film 12 by exposing the second resin film 14 to developer 15 of the first resin film 12, and a process cleaning the substrate surface exposed to the developer.

18. 发明专利

JP2003209039A PROCESSING DEVICE AND TREATMENT METHOD OF SUBSTRATE 审中-公开
公开(公告)号：JP2003209039A
公开(公告)日：2003-07-25
申请号：JP2002005057
申请日：2002-01-11
申请人： EBARA CORP , TOSHIBA CORP
发明人： SHINOZAKI HIROYUKI , ITO SHINICHI , EMA TATSUHIKO
IPC分类号： G03F7/30 , B05C11/08 , B05D1/40 , H01L21/027 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To respond needs of restraining the amount of treatment liquid consumption while miniaturizing and simplifying a device and, further, reducing the amount of grinding in a grinding process or eliminating the grinding process itself even when a film is formed on the surface of a substrate having a recessed and projected pattern. SOLUTION: The substrate treatment device is equipped with a substrate holder 12 for detachably retaining the substrate 10, a flat plate 14 having a flat surface unit 14a arranged at a position facing the surface 10a of the substrate 10 retained by the substrate holder 12, and a moving mechanism 20 for moving the flat plate 14 with a small step to change a distance g between the substrate 10 retained by the substrate holder 12 and the flat plate 14. COPYRIGHT: (C)2003,JPO

19. 发明专利

JP2002023386A METHOD FOR TREATING SUBSTRATE 失效
公开(公告)号：JP2002023386A
公开(公告)日：2002-01-23
申请号：JP2000200252
申请日：2000-06-30
申请人： TOSHIBA CORP
发明人： EMA TATSUHIKO , ITO SHINICHI
IPC分类号： G03F7/32 , G03F7/40 , H01L21/027 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To diminish defects caused after development without increasing unevenness in the intrasurface dimensions of a substrate. SOLUTION: In a method for treating a substrate in which the disclosed surface of a substrate 11 to be worked is washed with pure water after a resist 12 exposed through an LSI pattern on the substrate 11 is developed with a TMAH developing solution, washing is carried out using ozonic water 17 containing 3 ppm dissolved gaseous ozone for 15 sec while turning the substrate 11 at 500 r.p.m. in the first washing step to degrade organic substances sticking to the disclosed surface of the substrate 11 and washing is carried out using hydrogenous water 18 containing 1.2 ppm dissolved gaseous hydrogen for 15 sec while turning the substrate 11 at 500 r.p.m. in the second washing step to remove the degraded organic substances from the substrate.

20. 发明专利

JP2001170546A METHOD AND APPARATUS FOR FORMING FILM 失效
公开(公告)号：JP2001170546A
公开(公告)日：2001-06-26
申请号：JP35644799
申请日：1999-12-15
申请人： TOSHIBA CORP
发明人： EMA TATSUHIKO , ITO SHINICHI
IPC分类号： B05C9/12 , B05D1/02 , B05D1/26 , B05D3/02 , G03F7/16 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To uniformize a film thickness distribution of a coating film formed by a scan coating method. SOLUTION: After forming a liquid film by a scan coating method on a substrate to be processed having a temperature distribution for correcting the temperature distribution of the liquid film generated by vaporization heat by evaporation of a solvent contained in the liquid film, the solvent in the liquid film is eliminated to form the coated film.

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