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1. 发明专利

JP2003209039A PROCESSING DEVICE AND TREATMENT METHOD OF SUBSTRATE 审中-公开
公开(公告)号：JP2003209039A
公开(公告)日：2003-07-25
申请号：JP2002005057
申请日：2002-01-11
申请人： EBARA CORP , TOSHIBA CORP
发明人： SHINOZAKI HIROYUKI , ITO SHINICHI , EMA TATSUHIKO
IPC分类号： G03F7/30 , B05C11/08 , B05D1/40 , H01L21/027 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To respond needs of restraining the amount of treatment liquid consumption while miniaturizing and simplifying a device and, further, reducing the amount of grinding in a grinding process or eliminating the grinding process itself even when a film is formed on the surface of a substrate having a recessed and projected pattern. SOLUTION: The substrate treatment device is equipped with a substrate holder 12 for detachably retaining the substrate 10, a flat plate 14 having a flat surface unit 14a arranged at a position facing the surface 10a of the substrate 10 retained by the substrate holder 12, and a moving mechanism 20 for moving the flat plate 14 with a small step to change a distance g between the substrate 10 retained by the substrate holder 12 and the flat plate 14. COPYRIGHT: (C)2003,JPO

2. 发明专利

JP2015041648A パターン形成方法、パターン形成用マスク及びパターン形成装置审中-公开
标题翻译：图案形成方法，图案形成掩模和图案形成装置
公开(公告)号：JP2015041648A
公开(公告)日：2015-03-02
申请号：JP2013170793
申请日：2013-08-20
申请人：株式会社東芝 , Toshiba Corp
发明人： INENAMI RYOICHI , ITO SHINICHI , SATO TAKASHI
IPC分类号： H01L21/027 , G03F1/20
CPC分类号： H01J37/3175 , H01J2237/31774 , H01J2237/31779 , Y10T29/49002 , Y10T29/49227
摘要：【課題】リソグラフィ技術を用いて広い範囲に短時間で高精度なパターンを形成すること。【解決手段】実施形態に係るパターン形成方法は、複数の光透過部が周期的に配置された干渉用マスクパターンと、前記干渉用マスクパターンと離間して配置された光電変換部と、電子遮蔽部と、を用意する工程と、前記干渉用マスクパターンに光を照射し、前記光透過部を透過した前記光の透過光に基づきタルボ干渉を発生させる工程と、前記タルボ干渉による干渉光を前記光電変換部に照射して、前記光電変換部から前記干渉光に基づく電子を放出する工程と、前記電子を加工対象部材へ照射してパターンを形成する工程と、含む。【選択図】図1
摘要翻译：要解决的问题：提供一种能够使用光刻技术在短时间内在宽范围内形成精确图案的图案形成方法。解决方案：图案形成方法包括以下步骤：制备干涉掩模图案，其中多个光透射部分间隔设置，设置为与干涉掩模图案分离的光电转换部分和电子屏蔽部分; 基于照射到干涉掩模图案的光的透射光束产生Talbot干涉，并透过透光部; 通过用由Talbot干涉产生的干涉光照射光电转换部，基于来自光电转换部的干涉光的发光电子; 以及通过将电子照射到待处理的部件来形成图案。

3. 发明专利

JP2012019010A Imprinting template, manufacturing method of imprinting template, and pattern formation method 有权
标题翻译：印刷模板，模板制作方法和图案形成方法
公开(公告)号：JP2012019010A
公开(公告)日：2012-01-26
申请号：JP2010154660
申请日：2010-07-07
申请人： Toshiba Corp , 株式会社東芝
发明人： KOBAYASHI KATSUTOSHI , KAWAMURA YOSHIHISA , ITO SHINICHI
IPC分类号： H01L21/027 , B29C33/38
CPC分类号： B29C33/424 , B29C33/305 , B29C33/3878 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： PROBLEM TO BE SOLVED: To provide an imprinting template which can reduce the frequency of original template re-production, a method of manufacturing the imprinting template, and a pattern formation method.SOLUTION: An imprinting template 110 includes a pedestal substrate 10; and a pattern imprinting part 20 made of a resin and having an uneven pattern 21 for imprinting its pattern shape onto a target object. An uneven part is formed on a main surface 10a of the pedestal substrate 10 and the pattern imprinting part 20 on the main surface 10a side fits into concave portions of the uneven part. A pattern formation method includes the steps of: placing a target object on the substrate; bringing the uneven pattern 21 into contact with the target object using the imprinting template 110 made of a resin having the uneven pattern formed on the pedestal base 10; and releasing the imprinting template 110 from the target object and imprinting the pattern shape of the uneven pattern 21 onto the object after the object is cured.
摘要翻译：要解决的问题：提供可以降低原始模板再生产的频率的压印模板，制作压印模板的方法和图案形成方法。压印模板110包括基座基板10; 以及由树脂制成并且具有用于将其图案形状压印到目标物体上的不均匀图案21的图案压印部分20。在基座基板10的主表面10a上形成有不平坦部分，并且主表面10a侧的图案压印部20装配在凹凸部的凹部中。图案形成方法包括以下步骤：将目标物体放置在基板上; 使用由具有形成在台座10上的凹凸图案的树脂制成的压印模板110使不平坦图案21与目标物体接触; 并从目标物体释放压印模板110，并且在物体固化之后将不均匀图案21的图案形状压印到物体上。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2011224965A Method and apparatus for template surface treatment, and pattern forming method 有权
标题翻译：用于模板表面处理的方法和装置，以及图案形成方法
公开(公告)号：JP2011224965A
公开(公告)日：2011-11-10
申请号：JP2010280514
申请日：2010-12-16
申请人： Toshiba Corp , 株式会社東芝
发明人： KAWAMURA YOSHIHISA , KOBAYASHI KATSUTOSHI , ITO SHINICHI , HAYASHI HIDEKAZU , TOMITA HIROSHI
IPC分类号： B29C33/72 , B29C59/02 , B81C3/00 , H01L21/027
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： PROBLEM TO BE SOLVED: To form a release layer with a high evenness on a template surface.SOLUTION: A template surface treatment method includes hydroxylating the surface of a template having an uneven pattern or absorbing water on the surface to distribute OH radicals on the surface, and coupling a coupling agent on the template surface on which the OH radicals are distributed. These steps are performed in an environment in which amines are controlled to be in a predetermined concentration or less.
摘要翻译：要解决的问题：在模板表面上形成高均匀度的剥离层。解决方案：模板表面处理方法包括在表面上使具有不均匀图案或吸收水的模板的表面羟基化以在表面上分布OH自由基，并将偶联剂偶联在其上OH基团的模板表面上分散式。这些步骤在胺被控制在预定浓度或更低浓度的环境中进行。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2011082369A Method and system for manufacturing semiconductor device 审中-公开
标题翻译：用于制造半导体器件的方法和系统
公开(公告)号：JP2011082369A
公开(公告)日：2011-04-21
申请号：JP2009233986
申请日：2009-10-08
申请人： Toshiba Corp , 株式会社東芝
发明人： ORI TOMOYA , ITO SHINICHI
IPC分类号： H01L21/027 , G03F7/38
CPC分类号： G03F7/38 , G03F7/2022 , H01L21/0274 , H01L21/31144
摘要： PROBLEM TO BE SOLVED: To provide a method and system for manufacturing a semiconductor device that suppresses dimensional variation of a resist pattern.
SOLUTION: In the application developing device 11, a resist film is formed on a wafer (step S1), and the wafer is conveyed to an exposure device 12 for device area (step S2). In the exposure device 12, portions formed in the device area in the resist film are exposed (step S3), and the resist film is heated to allow an unreacting acid to be reacted while controlling diffusion length (step S4) and the wafer is returned to the application developing device 11 (step S5). In the application developing device 11, portions formed in a peripheral area in the resist film are exposed (step S6), the resist film is heated (step S7), and it is developed (step S8). Thus, a resist pattern is formed.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供抑制抗蚀剂图案的尺寸变化的半导体器件的制造方法和系统。解决方案：在应用显影装置11中，在晶片上形成抗蚀剂膜（步骤S1），将晶片输送到装置区域的曝光装置12（步骤S2）。在曝光装置12中，露出形成在抗蚀剂膜的器件区域中的部分（步骤S3），并且加热抗蚀剂膜以允许不反应的酸在控制扩散长度的同时反应（步骤S4）并返回晶片到应用显影装置11（步骤S5）。在应用显影装置11中，暴露在抗蚀剂膜的周边区域中形成的部分（步骤S6），对抗蚀剂膜进行加热（步骤S7），并进行显影（步骤S8）。因此，形成抗蚀剂图案。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2010046923A Template cleaning method and pattern forming method 有权
标题翻译：模式清洗方法和图案形成方法
公开(公告)号：JP2010046923A
公开(公告)日：2010-03-04
申请号：JP2008213354
申请日：2008-08-21
申请人： Toshiba Corp , 株式会社東芝
发明人： ITO SHINICHI
IPC分类号： B29C33/72 , H01L21/027
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： PROBLEM TO BE SOLVED: To provide a pattern formation template cleaning method for effectively removing foreign substances remaining on the template for use in an imprinting method.
SOLUTION: The template cleaning method comprises: holding the template 120 with an uneven pattern face; supplying a detergent 402 to an area including the foreign substance adhered to the pattern face of the template 120; performing irradiation of emitted light 105 from face of the template 120, opposite from the pattern face, and optically exciting the detergent 402 with the emitted light 105 to produce a radical; making at least a part of the foreign substance hydrophilic by reaction of the foreign substance with the radical; and removing the foreign substance from the template after the hydrophilic treatment. Thus, the resist residue 24 on the template 120 is removed.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种图案形成模板清洁方法，用于有效地去除在印模方法中使用的残留在模板上的异物。解决方案：模板清洁方法包括：将模板120保持为不均匀的图案面; 向包括附着在模板120的图案面的异物的区域供给洗涤剂402; 从模板120的与图案面相反的面进行发射光105的照射，并用发射光105光学激发洗涤剂402以产生自由基; 通过异物与自由基的反应使至少一部分异物亲水化; 并在亲水处理后从模板中除去异物。因此，去除模板120上的抗蚀剂残渣24。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009294439A Resist pattern forming method 审中-公开
标题翻译：电阻图案形成方法
公开(公告)号：JP2009294439A
公开(公告)日：2009-12-17
申请号：JP2008147957
申请日：2008-06-05
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIOBARA HIDESHI , ITO SHINICHI
IPC分类号： G03F7/38 , H01L21/027
CPC分类号： G03F7/38 , G03F7/168 , G03F7/70525 , G03F7/7075 , G03F7/70808 , G03F7/70841 , G03F7/70866
摘要： PROBLEM TO BE SOLVED: To form a resist pattern in which dimensional variations and defects are minimized as much as possible with high throughput.
SOLUTION: A resist film is formed on a substrate and subjected to decompression treatment; the resist film is subjected to exposure processing in the decompressive state; decompression release treatment is performed by which a gas whose relative humidity in terms of normal temperature is kept in a predetermined range is introduced into the decompressive environment to humidify the resist film while releasing the decompressive state; after the decompression release treatment, the resist film is baked by heating; and the resist film is developed.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了形成其中尺寸变化和缺陷尽可能地以高生产量最小化的抗蚀剂图案。解决方案：在基板上形成抗蚀剂膜并进行减压处理; 抗蚀剂膜在减压状态下进行曝光处理; 进行将常温相对湿度保持在预定范围内的气体的减压释放处理引入减压环境中以在释放减压状态的同时加湿抗蚀剂膜; 在减压脱模处理之后，通过加热烘烤抗蚀剂膜; 并且抗蚀剂膜被开发。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2009169246A Method for creating mask pattern data, method for forming mask pattern, and method for forming pattern 审中-公开
标题翻译：用于创建掩模图形数据的方法，用于形成掩模图案的方法和形成图案的方法
公开(公告)号：JP2009169246A
公开(公告)日：2009-07-30
申请号：JP2008009078
申请日：2008-01-18
申请人： Toshiba Corp , 株式会社東芝
发明人： SHO KOTARO , ITO SHINICHI
IPC分类号： G03F1/68 , G03F1/70
摘要： PROBLEM TO BE SOLVED: To improve uniformity in a resist pattern relating to a lithographic processing of exposing a resist film by using a photomask and developing the resist film. SOLUTION: A method for forming a pattern comprises: forming a resist film on a substrate or a layer to be processed; transferring a pattern onto the resist film by using a photomask in which the dimension of a mask pattern is defined in accordance with a reflectance for light of a base layer of the resist film; and developing the resist film to form a resist pattern. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提高与通过使用光掩模曝光抗蚀剂膜并显影抗蚀剂膜的光刻处理相关的抗蚀剂图案的均匀性。解决方案：用于形成图案的方法包括：在基板或待加工层上形成抗蚀剂膜; 通过使用其中根据抗蚀剂膜的基底层的光的反射率来限定掩模图案的尺寸的光掩模将图案转印到抗蚀剂膜上; 并且使抗蚀剂膜显影以形成抗蚀剂图案。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2009155084A Sheet conveying apparatus 审中-公开
标题翻译：板材输送装置
公开(公告)号：JP2009155084A
公开(公告)日：2009-07-16
申请号：JP2007337803
申请日：2007-12-27
申请人： Toshiba Corp , 株式会社東芝
发明人： ITO SHINICHI
IPC分类号： B65H5/02 , B65H29/60
CPC分类号： B65H29/12 , B65H29/60 , B65H2220/09 , B65H2301/3123 , B65H2301/321 , B65H2301/33212 , B65H2301/3322 , B65H2301/3421 , B65H2404/2612 , B65H2701/1916
摘要： PROBLEM TO BE SOLVED: To provide a sheet conveying apparatus capable of sorting and conveying sheets conveyed in an upright state to the positions of different heights in an upright state without disturbing its conveying posture.
SOLUTION: A sorting and conveying apparatus 20 for selectively sorting postal items P to a stacker on an upper stage side and a stacker on a lower stage side of a sorting and stacking device has conveying belt pairs 32a branched from a branch gate 31 to a lower stage side, and conveying belt pairs 32b branched to the upper stage side. The conveying belt pairs 32b branched to the upper stage side have a first twisted section 33, an S-shaped rising section 34, and a second twisted section 35. The postal items P tilted by the first twisted portion 33 are elevated by the S-shaped rising section 34 in a tilted state, and the postal items P are conveyed so as to be returned upright by the second twisted portion 35.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种片材输送装置，其能够以直立状态将输送的片材分类并输送到不同高度的位置，而不干扰其输送姿势。解决方案：用于将邮件P选择性地分类到分类和堆叠装置的下级侧上的堆叠器和堆叠器的分类和输送装置20具有从分支门31分支的输送带对32a 并且传送带对32b分支到上段侧。分支到上段侧的输送带对32b具有第一扭转部33，S形上升部34和第二扭转部35.由第一扭转部33倾斜的邮件P被S- 形状的上升部分34处于倾斜状态，并且邮件物品P被输送以便被第二扭转部分35直立地返回。（C）版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2007258759A Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：JP2007258759A
公开(公告)日：2007-10-04
申请号：JP2007180381
申请日：2007-07-09
申请人： Toshiba Corp , 株式会社東芝
发明人： ITO SHINICHI
IPC分类号： H01L21/027
摘要： PROBLEM TO BE SOLVED: To suppress the occurrence of defects in a resist pattern in immersion exposure in which exposure is carried out through a liquid film in a local region on a substrate.
SOLUTION: A resist film is formed on a substrate, subsequently, the substrate on which the resist film is formed is mounted on an exposure apparatus, and a liquid film is selectively formed on a local region on the resist film. When the region on which the liquid film is selectively formed includes an edge part of the resist film on the substrate, the flow direction of the liquid film is controlled so as to be a direction to the edge from a region on which a pattern is transferred. Immersion exposure is carried out in the state where the local liquid film is formed. After the exposure, the resist film on which a latent image is formed is heated.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了抑制在浸渍曝光中的抗蚀剂图案中的缺陷的发生，其中通过基板上的局部区域中的液膜进行曝光。解决方案：在基板上形成抗蚀剂膜，随后将形成有抗蚀剂膜的基板安装在曝光装置上，并且在抗蚀剂膜上的局部区域上选择性地形成液膜。当选择性地形成液膜的区域包括基板上的抗蚀剂膜的边缘部分时，液膜的流动方向被控制为从图案转移的区域到边缘的方向。在形成局部液膜的状态下进行浸渍曝光。曝光后，形成有潜像的抗蚀剂膜被加热。版权所有（C）2008，JPO＆INPIT

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