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1. 发明专利

JP2010153458A Method of manufacturing semiconductor device, and semiconductor device 审中-公开
标题翻译：制造半导体器件的方法和半导体器件
公开(公告)号：JP2010153458A
公开(公告)日：2010-07-08
申请号：JP2008327577
申请日：2008-12-24
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMADA NOBUHIDE
IPC分类号： H01L21/76 , H01L21/316 , H01L21/768 , H01L21/8247 , H01L23/522 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L21/76229 , H01L27/11521 , H01L27/11524 , H01L27/11529 , H01L27/11548
摘要： PROBLEM TO BE SOLVED: To prevent collapse of a portion of an active region when forming trenches having narrow opening width.
SOLUTION: A charge holding layer 4 and an electrode film 5 are laminated and formed on a silicon substrate 1, and trenches 1a, 1b are formed by collective processing. A silicon oxide film 6 is formed on an upper surface and in the trenches 1a, 1b by a plasma CVD method. A void Va is formed in the narrow trench 1a. The silicon oxide film 6 is etched back to open an upper end of the void Va. In this case, patterning is performed to an upper portion of the trench 1a for allowing the silicon oxide film 6 to remain as a beam section 6a orthogonal to the upper portion of the trench 1a. After this, separation of resist and wet treatment are performed, where collapse can be prevented since the beam section 6a is provided. A polysilazane film is embedded, and is converted to a silicon oxide film 7 by carrying out vapor-cure.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了防止当形成具有窄开口宽度的沟槽时有效区域的一部分的塌陷。解决方案：电荷保持层4和电极膜5层叠并形成在硅衬底1上，通过集中处理形成沟槽1a，1b。通过等离子体CVD法在上表面和沟槽1a，1b中形成氧化硅膜6。在窄沟槽1a中形成空隙Va。蚀刻氧化硅膜6以打开空隙Va的上端，在这种情况下，对沟槽1a的上部进行图案化，以使氧化硅膜6保持为与沟槽1a的上部。之后，进行抗蚀剂和湿处理的分离，由于设置了梁部分6a，因此可以防止塌陷。嵌入聚硅氮烷膜，通过进行蒸气固化而转化为氧化硅膜7。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2003151969A METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2003151969A
公开(公告)日：2003-05-23
申请号：JP2001350333
申请日：2001-11-15
申请人： TOSHIBA CORP
发明人： YAMADA NOBUHIDE , NAKADA RENPEI , YODA TAKASHI
IPC分类号： B05C9/12 , H01L21/31 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To shorten the time required for deposition of an insulation film with the coating process. SOLUTION: The apparatus comprises a coating unit 1, an evacuating and drying chamber 2, a transfer unit 7 and an electron beam irradiation unit 3. A substrate 5, on which a coating film is formed, is carried, under the evacuated atmosphere, to the electron beam irradiation unit 3 from the evacuation and drying chamber 2, by previously making the electron beam irradiation unit 3 and transfer unit 7 under a vacuum condition.

3. 发明专利

JP2012084789A Method for manufacturing semiconductor device and semiconductor manufacturing equipment 审中-公开
标题翻译：制造半导体器件和半导体制造设备的方法
公开(公告)号：JP2012084789A
公开(公告)日：2012-04-26
申请号：JP2010231502
申请日：2010-10-14
申请人： Toshiba Corp , 株式会社東芝
发明人： TOBISAWA TAKESHI , YAMADA NOBUHIDE , OGAWA YOSHIHIRO , KIYOTOSHI MASAHIRO
IPC分类号： H01L21/31 , B05C5/00 , B05C9/14 , H01L21/304
CPC分类号： H01L21/02076 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02301 , H01L21/02326 , H01L21/28273 , H01L27/11524
摘要： PROBLEM TO BE SOLVED: To form an embedded insulating film such that a pattern formed by etching will not collapse.SOLUTION: There is provided a method for manufacturing a semiconductor device in which an insulating film is formed on a workpiece etched into a predetermined pattern by embedding the insulating film on the pattern. The method comprises the steps of: cleaning an etching residue of the workpiece remaining on the etched pattern with a first chemical liquid; rinsing the workpiece subjected to cleaning with the first chemical liquid with a rinse liquid; and applying an application liquid designed to form an insulating film to the workpiece subjected to rinsing. The process from the step of cleaning with the first chemical liquid through the step of applying the application liquid is performed in the same processing room such that the workpiece maintains the state in which the liquids are held on the pattern.
摘要翻译：要解决的问题：为了形成嵌入式绝缘膜，使得通过蚀刻形成的图案不会折叠。解决方案：提供一种半导体器件的制造方法，其中通过将绝缘膜嵌入在图案上，在蚀刻成预定图案的工件上形成绝缘膜。该方法包括以下步骤：用第一化学液体清洗残留在蚀刻图案上的工件的蚀刻残留物; 用冲洗液冲洗用第一化学液体清洗的工件; 以及将设计成形成绝缘膜的涂布液施加到经过漂洗的工件上。在通过施加涂布液的步骤中利用第一化学液体进行清洗的步骤的处理在相同的处理室中进行，使得工件保持液体保持在图案上的状态。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2010153623A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2010153623A
公开(公告)日：2010-07-08
申请号：JP2008330662
申请日：2008-12-25
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMADA NOBUHIDE , KISHI KAZUKI
IPC分类号： H01L21/76 , H01L21/764 , H01L21/8247 , H01L27/10 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor devices for suppressing an increase in costs and forming grooved insulation sections having different opening width.
SOLUTION: An element separation groove 35 is opened in the direction of a lower semiconductor substrate 11 from a light-shielding film 33 for shielding irradiation light 43 having a wavelength λ, and has opening width DS less than λ. An element separation groove 36 is opened in the direction of the lower semiconductor substrate 11 from the light-shielding film 33, and has opening width DW not less than λ. At least the inside of the element separation grooves 35, 36 is filled with a photosensitive film 41 sensitive to irradiation light 33. The photosensitive film 41 is irradiated with the polarized irradiation light 33 vibrating in the direction of the opening width DS. The photosensitive film 41 is developed. The exposed photosensitive film 41 is dissolved for removal. CVD insulation films are formed in the inside of and at an upper portion of the element separation groove 36 from which the entire photosensitive film 41 has been removed, and the element separation groove 35 of which the photosensitive film 41 has been left. Processing is performed so that an upper surface of the photosensitive film 41 is exposed. The photosensitive film 41 of the element separation groove 35 is removed. A coating insulation film is formed in the element separation groove 35.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种制造用于抑制成本增加的半导体器件的制造方法，并且形成具有不同开口宽度的开槽绝缘部分。解决方案：元件分离槽35从用于屏蔽具有波长λ的照射光43的遮光膜33沿着下半导体衬底11的方向打开，并且具有小于λ的开口宽度DS。元件分离槽36从遮光膜33向下半导体基板11的方向开口，开口宽度DW不小于λ。至少元件分离槽35,36的内部填充有对照射光33敏感的感光膜41.感光膜41照射在开口宽度DS的方向上振动的偏振照射光33。显影感光性膜41。曝光的感光膜41被溶解以除去。在除去整个感光膜41的元件分离槽36的内部和上部形成CVD绝缘膜，并且已经留下了感光膜41的元件分离槽35。进行处理，使感光膜41的上表面露出。去除元件分离槽35的感光膜41。在元件分离槽35中形成涂层绝缘膜。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2006319063A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2006319063A
公开(公告)日：2006-11-24
申请号：JP2005138920
申请日：2005-05-11
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMADA NOBUHIDE , NAKADA RENPEI
IPC分类号： H01L21/76
摘要： PROBLEM TO BE SOLVED: To prevent a shape defect of an insulating film and fluctuation of height of the insulating film due to etching-back of the insulating film buried in a groove formed in a semiconductor substrate.
SOLUTION: A method of manufacturing semiconductor device is provided with a step for forming the groove 50 on the semiconductor substrate 10, a step for burying an insulated film 60 in the groove 50, a step for making the solution of water comprising a surfactant permeate into the insulated film 60, a step for digging down an insulated film 70 into which the surfactant permeates by wet-etching, and a step for removing the surfactant from the insulated film 70 into which the surfactant permeates.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了防止绝缘膜的形状缺陷以及由于掩埋在形成在半导体衬底中的沟槽中的绝缘膜的腐蚀而导致的绝缘膜的高度波动。解决方案：制造半导体器件的方法具有在半导体衬底10上形成沟槽50的步骤，将绝缘膜60埋入凹槽50中的步骤，使包含水溶液的水溶液的步骤表面活性剂渗透到绝缘膜60中，用于通过湿法蚀刻来挖掘表面活性剂渗透到其中的绝缘膜70的步骤以及从表面活性剂渗透到其中的绝缘膜70除去表面活性剂的步骤。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2001015502A FORMATION OF COATING FILM AND MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001015502A
公开(公告)日：2001-01-19
申请号：JP18205799
申请日：1999-06-28
申请人： TOSHIBA CORP
发明人： YAMADA NOBUHIDE , MIYAJIMA HIDESHI , NAKADA RENPEI , KAWAI MOTONOBU
IPC分类号： H01L21/768 , H01L21/312 , H01L21/316 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To prevent the reduction of crack resistance film thickness and mechanical strength by applying a liquid material as a coating film onto a substrate and heating the substrate on one hot plate to form a coating film. SOLUTION: A varnish that a polymethyl siloxane is dissolved is applied as a solvent onto an Si substrate by using a coke, and the Si substrate is moved by a transfer arm 3, and then it is placed on a hot plate 1 kept at 80 deg.C and heated thereon for one minute. While the Si substrate is left there, the output of a heater of the hot plate l is increased and the temperature of the Si substrate is raised up to 200 deg.C, and it is heated for one minute. Furthermore, the temperature thereof is raised at a rate of 50 deg.C/min up to 450 deg.C, and the substrate is heated at 450 deg.C for 30 minutes. Thus, the device can be made compact in size and an atmosphere during heating be controlled accurately, and furthermore, a coating film can be formed by a hot plate without reducing the crack resistance film thickness and mechanical strength.

7. 发明专利

JP2007335807A Method for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2007335807A
公开(公告)日：2007-12-27
申请号：JP2006168928
申请日：2006-06-19
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMADA NOBUHIDE , NAKADA RENPEI
IPC分类号： H01L21/76 , C23C16/40 , C23C16/44 , H01L21/316 , H01L21/768 , H01L21/8247 , H01L23/522 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/401 , C23C16/463 , C23C16/56 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/02304
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for efficiently and easily embedding a film in a plurality of concave sections whose aspect rates are different, and for improving the embedding performance of the film to be embedded in the concave sections, and for suppressing any crack or peeling.
SOLUTION: Silane 35 and hydrogen peroxide 36 are made to react on a substrate 1 so that liquid phase silanol 37 having mobility can be generated. The silanol 37 is introduced until a first concave section 5a formed in a substrate 1 whose aspect rate is a predetermined value or more can be filled, and the silanol is introduced from the bottom section to intermediate section in a second concave section 5b whose aspect rate is less than a predetermined value. The silanol 37 in the respective concave sections 5a and 5b is dehydrated and condensed, and converted into a silicon oxide film 8, and the silicon oxide film 8 is embedded in the concave section 5a, and the silicon oxide film 8 is formed from the bottom section to intermediate section of the concave section 5b. An insulating film 9 whose film density is higher than that of the silicon oxide film 8 is formed so as to be embedded from the intermediate section to the upper part of the concave section 5b.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种用于制造半导体器件的方法，用于在纵横比不同的多个凹部中有效且容易地将膜嵌入，并且为了提高嵌入在膜的嵌入性能凹部，并且用于抑制任何裂纹或剥离。解决方案：使硅烷35和过氧化氢36在基材1上反应，从而可以产生具有迁移率的液相硅烷醇37。引入硅烷醇37，直到可以填充形成在其长宽比为预定值以上的基板1中的第一凹部5a，并且将硅烷醇从底部引入到中间部分，第二凹部5b的纵横比小于预定值。各凹部5a，5b中的硅烷醇37进行脱水缩合，转换为氧化硅膜8，将氧化硅膜8嵌入到凹部5a中，从底部形成氧化硅膜8 凹部5b的中间部分。形成膜密度高于氧化硅膜8的绝缘膜9，以从中间部分嵌入凹部5b的上部。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2003297725A Solid film forming method 有权
标题翻译：固体膜形成方法
公开(公告)号：JP2003297725A
公开(公告)日：2003-10-17
申请号：JP2002100516
申请日：2002-04-02
申请人： Toshiba Corp , 株式会社東芝
发明人： ITO SHINICHI , EMA TATSUHIKO , YAMADA NOBUHIDE , NAKADA RENPEI , OKUMURA KATSUYA
IPC分类号： G03F7/039 , G03F7/16 , G03F7/26 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method for easily forming a solid film the composition of which differs in the direction of a film thickness.
SOLUTION: The method comprises a process for forming a liquid film 102 composed of a solution in which a first substance containing more than one material is dissolved in a solvent on a substrate 101, a process for removing the solvent from the liquid film 102, a process for supplying a solution 103, in which a second material containing more than one material is dissolved, to the liquid film in a state that the solvent remains on the surface layer of a liquid film 102a, and a process for removing the solvent remaining in a liquid film 103a and forming a solid film 110.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种容易形成固体膜的方法，其组成不同于膜厚度的方向。解决方案：该方法包括一种用于形成由其中含有多于一种材料的第一物质溶解在基材101上的溶剂中的溶液构成的液膜102的方法，从液膜中除去溶剂的方法如图102所示，在溶剂保留在液膜102a的表面层上的状态下，向溶液中提供溶解有多于一种材料的第二材料的溶液103的方法，溶剂残留在液膜103a中并形成固体膜110。版权所有（C）2004，JPO

9. 发明专利

JP2000357687A MANUFACTURE FOR SEMICONDUCTOR DEVICE AND PLASMA CVD UNIT 失效
公开(公告)号：JP2000357687A
公开(公告)日：2000-12-26
申请号：JP16861999
申请日：1999-06-15
申请人： TOSHIBA CORP
发明人： MIYAJIMA HIDESHI , NAKADA RENPEI , KAWAI MOTONOBU , YAMADA NOBUHIDE
IPC分类号： H01L23/522 , C23C16/40 , C23C16/50 , H01L21/316 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To form a lower permittivity insulation film without lowering reliability due to a degeneration layer by a method wherein temperatures of a semiconductor substrate are increased up to deposition temperatures of an insulation film. SOLUTION: Not by a heating method by an oxygen ion impact, but by a heating method using a resistant heating heater, substrate temperatures are increased up to temperatures required for forming an SiOF film 4. Therefore, a CH3-SiO2 film is not oxidized. SiO4 and O2 as material gases are introduced into a reactive container at 20 SCCM and 40 SCCM, respectively, and the pressure is held at 5.0 mTorr, and induction power is set to be 2000 W, and the SiOF film 4 is formed on the entire surface by a high dense plasma CVD method. An Al wiring of a second layer and on is formed on the SiOF film 4. A degeneration layer which is a cause of generating HF is not formed, and therefore it is possible to form a lower permittivity interlayer insulation film by use of the high dense plasma CVD method without lowering reliability.

10. 发明专利

JP2010080658A Composition for film formation, insulating film, semiconductor device, and method of manufacturing same 有权
标题翻译：膜形成用组合物，绝缘膜，半导体器件及其制造方法
公开(公告)号：JP2010080658A
公开(公告)日：2010-04-08
申请号：JP2008246845
申请日：2008-09-25
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKASAKI YASUSHI , YAMADA NOBUHIDE , SHIMADA MIYOKO , MIYAJIMA HIDESHI , WATANABE KEI
IPC分类号： H01L21/312 , C07F7/18 , C08G77/50
CPC分类号： C07F7/1836 , H01L21/02126 , H01L21/02211 , H01L21/02274 , H01L21/02282 , H01L21/02337 , H01L21/02348 , H01L21/02351 , H01L21/3105 , H01L21/31633 , H01L21/67109 , H01L21/67115 , H01L21/76801
摘要： PROBLEM TO BE SOLVED: To provide a composition for film formation for forming an organic silicon oxide film having excellent dielectric property and mechanical strength, an insulating film provided with the organic silicon oxide film formed by using the composition for film formation, a semiconductor device provided with the organic silicon oxide film, and a method of manufacturing the same. SOLUTION: The composition for film formation contains a compound represented by a following general formula (I) or a hydrolyzate condensate thereof. The general formula (I) is X 1 3-m R 1 m SiR 2 SiR 3 nX 2 3-n . In the formula, R 1 and R 3 are each a hydrogen atom or a monovalent substituent group; R 2 is a divalent group having a C4 alicyclic structure or its derivative; X 1 and X 2 are each a hydrolyzable group; and m and n are each an integer of 0-2. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种用于形成具有优异的介电性能和机械强度的有机氧化硅膜的成膜用组合物，设置有通过使用成膜用组合物形成的有机氧化硅膜的绝缘膜，设置有有机氧化硅膜的半导体器件及其制造方法。解决方案：用于成膜的组合物包含由以下通式（I）表示的化合物或其水解产物缩合物。通式（I）是X 1 3-m S SP> SIR 3 NX 2 3-n的。在该式中，R“SP”1和R“3”均为氢原子或一价取代基; R 2 SP 2是具有C 4脂环结构的二价基团或其衍生物; X 1 和X 2 分别是可水解基团; m和n分别为0-2的整数。版权所有（C）2010，JPO＆INPIT

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