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11. 发明专利

JP2011171487A Substrate rear surface flattening method 审中-公开
标题翻译：基板表面平铺方法
公开(公告)号：JP2011171487A
公开(公告)日：2011-09-01
申请号：JP2010033483
申请日：2010-02-18
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUI HIDEAKI , MORIYA TAKESHI , TERASAWA NOBUTOSHI , SAKAGAMI HIROMITSU
IPC分类号： H01L21/027 , G03F7/20 , H01L21/302 , H01L21/304
CPC分类号： H01L21/302 , G03F1/60 , G03F1/82 , G11B7/261 , H01L22/12
摘要： PROBLEM TO BE SOLVED: To provide a substrate rear surface flattening method removing a fine scratch without damaging a rear surface of a substrate. SOLUTION: The position and size of the scratch S on the rear surface of the wafer W are detected, a cluster 29 of gas molecules 28 formed by gathering many gas molecules 28 is selectively sprayed to the scratch S whose position and size are detected, and a photo-resist 30 applied onto a front surface of the wafer W is exposed to light. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种在不损坏基板的后表面的情况下除去细小划痕的基板后表面平坦化方法。解决方案：检测晶片W的后表面上的划痕S的位置和尺寸，通过聚集许多气体分子28形成的气体分子28的簇29被选择性地喷射到其位置和尺寸为并且施加到晶片W的前表面上的光刻胶30曝光。版权所有（C）2011，JPO＆INPIT

12. 发明专利

JP2009243941A Particle detecting system, particle detecting method, and program 有权
标题翻译：颗粒检测系统，颗粒检测方法和程序
公开(公告)号：JP2009243941A
公开(公告)日：2009-10-22
申请号：JP2008088006
申请日：2008-03-28
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUI HIDEAKI , TAMURA AKITAKE
IPC分类号： G01N15/02
摘要： PROBLEM TO BE SOLVED: To provide a particle detecting system, a particle detecting method, and a program for efficiently counting particles. SOLUTION: Particle detecting devices 10, 20, 30 whose detectable minimum particle diameter values in an introduced gas are different with each other are prepared. The gas to be measured is introduced from a plurality of introduction paths 4 to the plurality of particle detecting devices 10, 20, 30 respectively. A computer 5 receives the particle number detected by the plurality of particle detecting devices 10, 20, 30. The calculating means of the computer 5 calculates the particle diameter distribution of the particles based on the particle number relating to each particle detecting device 10, 20, 30 which received it and the minimum particle diameter value relating to each particle detecting device 10, 20, 30. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供粒子检测系统，粒子检测方法和用于有效计数粒子的程序。准备了引入气体中可检测的最小粒径值彼此不同的粒子检测装置10,20,30。待测量的气体从多个引入路径4分别引入到多个粒子检测装置10,20,30。计算机5接收由多个粒子检测装置10,20,30检测的粒子数。计算机5的计算装置根据与各粒子检测装置10,20相关的粒子数计算粒子的粒径分布，30，其接收它和每个粒子检测装置10,20,30的最小粒径值。（C）2010，JPO＆INPIT

13. 发明专利

JP2012078351A Chemical substance detection sensor and chemical substance detection method 有权
标题翻译：化学物质检测传感器和化学物质检测方法
公开(公告)号：JP2012078351A
公开(公告)日：2012-04-19
申请号：JP2011192914
申请日：2011-09-05
申请人： Tokyo Electron Ltd , Univ Of Tokyo , 国立大学法人東京大学 , 東京エレクトロン株式会社
发明人： GOMI SHINICHI , MATSUI HIDEAKI , OSHIMA YASUHIRO , HAYASHI TERUYUKI , SAKURAI TAKESHI , MITSUNO HIDEFUMI , KANZAKI RYOHEI
IPC分类号： G01N33/00 , A01K67/033 , C12N15/09 , G01N27/00 , G01N33/497
CPC分类号： G01N33/0001 , G01N33/566 , G01N2333/43578 , G01N2333/726
摘要： PROBLEM TO BE SOLVED: To provide a high-sensitive, compact, and inexpensive chemical substance detection sensor, and a chemical substance detection method.SOLUTION: According to an embodiment of the present invention, a chemical substance detection sensor 1 for detecting a specific chemical substance is provided, which introduces a gene that encodes an olfactory receptor protein of an insect other than a silk moth pheromone receptor, and includes a transgenic silk moth 2 that expresses the gene in a bombykol receptor cell.
摘要翻译：要解决的问题：提供高灵敏度，紧凑且廉价的化学物质检测传感器和化学物质检测方法。解决方案：根据本发明的一个实施方案，提供了一种用于检测特定化学物质的化学物质检测传感器1，该化学物质检测传感器1引入了编码蚕丝虫信息素受体以外的昆虫的嗅觉受体蛋白质的基因，并且包括在bombykol受体细胞中表达该基因的转基因丝蛾2。版权所有（C）2012，JPO＆INPIT

14. 发明专利

JP2011187703A Substrate cleaning method, and semiconductor manufacturing device 有权
标题翻译：基板清洗方法和半导体制造装置
公开(公告)号：JP2011187703A
公开(公告)日：2011-09-22
申请号：JP2010051735
申请日：2010-03-09
申请人： Iwatani Internatl Corp , Tokyo Electron Ltd , 岩谷産業株式会社 , 東京エレクトロン株式会社
发明人： HOSHINO SATOHIKO , MATSUI HIDEAKI , NARISHIMA MASAKI
IPC分类号： H01L21/304
CPC分类号： H01L21/02063 , H01J37/3244 , H01J37/32449 , H01J37/32816 , H01J37/32862 , H01L21/76808 , H01L21/76814
摘要： PROBLEM TO BE SOLVED: To provide a cleaning method capable of cleaning down to a bottom part of a pattern with a pattern-form-maintained state.
SOLUTION: The cleaning method of a wafer forming the predetermined pattern on a film on the wafer in a treatment container maintained in a vacuum includes a process (a pre-process) of cleaning the film on the wafer with the predetermined pattern formed by etching treatment with a predetermined cleaning gas, a process (an oxidizing process) of oxidizing residue on a surface of the pattern with an oxidative gas after the pre-process, and a process (a reducing process) of reducing the oxidized residue with a reducing gas. The oxidizing process and the reducing process are executed in succession (successive processes). The gases used in the pre-process and the successive process are clustered by being emitted into the treatment container from a gas nozzle which is maintained at an internal pressure higher than the internal pressure of the treatment container.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够以图案形式保持状态来清洁图案的底部的清洁方法。解决方案：在保持真空的处理容器中在晶片上的膜上形成预定图案的晶片的清洁方法包括以形成的预定图案清洁晶片上的膜的工艺（预处理）通过用预定的清洁气体进行蚀刻处理，在预处理之后用氧化性气体在图案表面上氧化残留物的方法（氧化工艺），以及用氧化气体还原氧化残余物的方法（还原过程）减少气体。氧化处理和还原过程依次执行（连续处理）。在预处理和连续过程中使用的气体通过从保持在高于处理容器的内部压力的内部压力的气体喷嘴排放到处理容器中而聚集。版权所有（C）2011，JPO＆INPIT

15. 发明专利

JP2010103443A Vacuum exhaust method for substrate processing apparatus, and substrate processing apparatus 有权
标题翻译：基板加工装置的真空排气方法及基板加工装置
公开(公告)号：JP2010103443A
公开(公告)日：2010-05-06
申请号：JP2008276026
申请日：2008-10-27
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUI HIDEAKI , MORIYA TAKESHI , NAGAYAMA MASAYUKI
IPC分类号： H01L21/3065 , C23C14/00 , C23C16/44 , H01L21/205 , H01L21/31
CPC分类号： B08B7/04 , B08B5/04 , B08B6/00 , B08B7/0035 , C23C16/4401 , C23C16/4412
摘要： PROBLEM TO BE SOLVED: To provide a vacuum gas discharging method of a substrate processing apparatus, capable of adsorbing and removing particles generated in a chamber in vacuum discharging and/or an out gas. SOLUTION: The vacuum gas discharging method of a substrate processing apparatus for depressurizing a chamber 11 equipped with a stage 12 for placing a wafer W, after releasing to the atmosphere, has a protective member covering step of covering the surface of the stage 12 with a protective member 25; a hermetically sealing step of hermetically sealing the chamber 11; and a vacuum gas discharging step of depressurizing the inside of the hermetically sealed chamber. The protective member 25 has a trap portion 38, having gas adsorption capability for collecting the particles P and the out gas, and a base portion 26. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种基板处理装置的真空气体排出方法，其能够吸附和去除在真空排出和/或外部气体中在室中产生的颗粒。解决方案：一种用于对配备有放置晶片W的台12的室11进行减压的基板处理装置的真空气体排出方法，在释放到大气之后具有覆盖台阶表面的保护构件覆盖步骤 12具有保护构件25; 气密密封室11的气密密封步骤; 以及减压气密室的内部的真空气体排出工序。保护构件25具有捕集部分38，具有用于收集颗粒P和排出气体的气体吸附能力和基部26.版权所有（C）2010，JPO＆INPIT

16. 发明专利

JP2008244409A Heat treatment method and device 审中-公开
标题翻译：热处理方法和装置
公开(公告)号：JP2008244409A
公开(公告)日：2008-10-09
申请号：JP2007086826
申请日：2007-03-29
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： OIKAWA MASAYUKI , TAMURA AKITAKE , MATSUI HIDEAKI
IPC分类号： H01L21/31 , C23C16/44 , H01L21/22
摘要： PROBLEM TO BE SOLVED: To prevent the damage of a furnance throat periphery part and the slippage of a lid and the furnance throat periphery part to be generated by the direct contact of the lid and the furnance throat periphery part, since a sealing member is crushed between the lid and the furnance throat periphery part during pressure reduction.
SOLUTION: A heat treatment equipment 1 includes a lid 17 which is mounted with a retainer 20 loaded with workpieces w in multi-stages and opens and closes the furnance throat 3a; a lifting mechanism 18 which carries the retainer 20 in/out of a treatment container 3 and opens and closes the lid 17; an annular sealing member 26 which is provided on the lid 17 and seals between the lid 17 and the furnance throat periphery part 3f of the treatment container 3; and a pressing force decreasing means 37 provided for decreasing the pressing force of the difference between internal and external pressure by the pressure reduction during the pressure reduction in the container 3.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题为了防止炉子周边部分的损坏以及通过盖子和炉喉周边部分的直接接触而产生的盖子和炉喉周边部分的滑动，由于密封在减压期间，在盖子和炉喉周边部分之间挤压构件。解决方案：热处理设备1包括盖17，盖17安装有多个装载有工件w并且打开和关闭炉喉3a的保持器20; 提升机构18，其将保持器20进出处理容器3，并且打开和关闭盖17; 设置在盖17上并在盖17和处理容器3的炉喉周边部3f之间进行密封的环状密封构件26; 以及压力减小装置37，其用于通过在容器3的减压期间的压力降低来减小内部和外部压力之间的压力的压力。版权所有：（C）2009，JPO＆INPIT

17. 发明专利

JP2001291655A METHOD FOR EVALUATING HYDROPHOBIC TREATMENT, METHOD FOR FORMING RESIST PATTERN, AND FORMATION SYSTEM FOR THE RESIST PATTERN 失效
公开(公告)号：JP2001291655A
公开(公告)日：2001-10-19
申请号：JP2000106515
申请日：2000-04-07
申请人： TOKYO ELECTRON LTD
发明人： KITANO JUNICHI , HANEDA KEIKO , ONO YUKO , KATANO TAKAYUKI , MATSUI HIDEAKI
IPC分类号： G01N23/225 , G01N27/62 , G03F7/16 , G03F7/26 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To evaluate the hydrophobicity on the surface of a substrate with high reliability and optimize hydrophobic treatment conditions, in a device for forming a resist pattern. SOLUTION: An HMDS gas is supplied to the surface of a wafer W for hydrophobic treatment, and the wafer W is housed in a sealed container 6 on a cassette stage 21 and it is conveyed to an analyzer A2 outside a device A1 for forming a resist pattern. The masses of ion kinds on the surface of the wafer W, such as CH3Si+, C3H9Si+, C3H9Si-, etc., are analyzed by using an analytical section such as TOF-SIMS, etc., thereby of the analytical equipment A2 measuring the quantity of HMDS(hexamethyl disilazane) on the surface of the wafer W. Thus, a quantity of HMDS on the surface of the wafer W can be measured, and hydrophobic treatment condition be evaluated with high reliability.

18. 发明专利

JP2001291664A SUBSTRATE TREATMENT APPARATUS 失效
公开(公告)号：JP2001291664A
公开(公告)日：2001-10-19
申请号：JP2001025266
申请日：2001-02-01
申请人： TOKYO ELECTRON LTD
发明人： KATANO TAKAYUKI , MATSUI HIDEAKI , KITANO JUNICHI , SUZUKI AKIRA , YAMASHITA TAKEHIDE , AOYAMA TORU , IWAKI HIROYUKI , SHIMURA SATORU , DEGUCHI MASATOSHI , YOSHIHARA KOSUKE
IPC分类号： G03F7/30 , B65G49/00 , H01L21/027 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To increase uniformity of development line widths by transferring a substrate from an aligner to a reaction acceleration section with the progress of image dissection of resist being suppressed, for example, in an aligner and a development apparatus. SOLUTION: In an interface station S3, disposed between a treatment station S2 for executing a development process or the like and the aligner S4, a reaction suppressing section 7 for cooling a substrate after exposure, for example, to about 10 to 15 deg.C is installed. In the treatment station S2, the reaction acceleration section (heating section 31) for accelerating image dissection of resist is installed. If the wafer W after exposure is cooled by the reaction suppression section 7, the progress of image dissection of a resist is suppressed, Therefore, the wafer W can be transferred from the aligner S4 to the heating section 31 with the progress of image dissection of resist being suppressed, and a development progress can be carried out with uniform degree of progress for image dissection of the resist. As a result, variations in development line widths can be suppressed, and thereby the uniformity of the development line widths can be increased.

19. 发明专利

JP2003124283A SUBSTRATE TREATMENT EQUIPMENT 审中-公开
公开(公告)号：JP2003124283A
公开(公告)日：2003-04-25
申请号：JP2001312593
申请日：2001-10-10
申请人： TOKYO ELECTRON LTD
发明人： KITANO JUNICHI , MATSUI HIDEAKI
IPC分类号： G03F7/16 , B65G49/00 , G03F7/20 , G03F7/30 , H01L21/027 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide substrate treatment equipment wherein the treatment atmosphere of a substrate can be controlled suitably before and after an exposure process. SOLUTION: Gas which is controlled to have prescribed humidity or oxygen concentration is supplied from a gas supplying source 40 which is provided with a dry air supplying source 33 and a nitrogen gas supplying source 32 to an interface 12. As a result, exposure can be performed suitably since the atmosphere of the interface 12 is controlled to have prescribed humidity or oxygen concentration when a wafer W travels on the interface 12 in processes before and after exposure by an aligner 13, so that accurate pattern formation is enabled.

20. 发明专利

JP2001244193A SUBSTRATE PROCESSING METHOD AND APPARATUS THEREOF 失效
公开(公告)号：JP2001244193A
公开(公告)日：2001-09-07
申请号：JP2000388086
申请日：2000-12-21
申请人： TOKYO ELECTRON LTD
发明人： KATANO TAKAYUKI , MATSUI HIDEAKI , KITANO JUNICHI , SUZUKI AKIRA , YAMASHITA TAKEHIDE , AOYAMA TORU , IWAKI HIROYUKI , SHIMURA SATORU
IPC分类号： G03F7/16 , B05C9/10 , B05C11/08 , B05C11/10 , B05D1/40 , B05D3/00 , B05D7/00 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide, for instance, an application/development apparatus capable of applying resist on the surface of a substrate with the temperature and humidity of the substrate kept very accurately, and improving substrates in processing uniformity. SOLUTION: A development unit D, an application unit C, and cooling plates 41 are arranged in a processing station S2 which applies resist on a wafer W, and the wafer W is transferred from one to the other by a substrate transfer means MA. The temperature of a region, into which the substrate W is transferred is detected by a temperature/humidity detector 3, and the temperature of the wafer W cooled down by the cooling plate 41, is regulated on the basis of detected value so that the temperature of the wafer W transferred to the application unit C gets equal to the application temperature of a processing liquid. With this setup, the wafer W is transferred to the application unit C, accurately keeping it at a certain temperature, and then a resist liquid is applied on the wafer W, so that unevenness of processing caused by a temperature changed of the wafer W can be restrained, and a substrate processing device can be improved in processing uniformity.

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