专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2011077131A Device for cleaning semiconductor manufacturing apparatus 审中-公开
标题翻译：用于清洁半导体制造装置的装置
公开(公告)号：JP2011077131A
公开(公告)日：2011-04-14
申请号：JP2009224667
申请日：2009-09-29
申请人： Renesas Electronics Corp , Tokyo Electron Ltd , ルネサスエレクトロニクス株式会社 , 東京エレクトロン株式会社
发明人： MATSUI HIDEAKI , MORIYA TAKESHI , SHIOYA MASAHIRO , SAKAMORI SHIGENORI , TERAKADO SAKAE , INOUE YOSUKE
IPC分类号： H01L21/304 , H01L21/027 , H01L21/205 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a device for cleaning a semiconductor manufacturing device capable of efficiently recovering spent steam without causing it to diffuse. SOLUTION: Projecting curved surfaces 17a are formed, in such a manner that used pure-water steam injected from steam supply ports 19 and is made to collide with an article to be cleaned 30 forms a flow along the surface of the external shape of the front end of the steam supply pipe 17 are formed at the front end of the steam supply pipe 17 for the device 10 for cleaning the semiconductor production device, including a pure-water steam generating vessel 12, and a cleaning nozzle 16 constituted of the steam supply pipe 17 and a steam recovery pipe 18. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够有效地回收废蒸汽而不使其扩散的半导体制造装置的清洗装置。解决方案：以这样的方式形成投影弯曲表面17a，使得从蒸汽供应口19喷射的被使用的纯水蒸汽与要清洁的物品30碰撞形成沿着外部形状的表面的流动蒸汽供给管17的前端形成在用于清洁包括纯水蒸汽发生容器12的半导体生产装置的装置10的蒸汽供应管17的前端和由蒸汽供应管17和蒸汽回收管18.版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2011066288A Method of determining whether processing can be started, and storage medium 有权
标题翻译：确定可以开始处理的方法和存储介质
公开(公告)号：JP2011066288A
公开(公告)日：2011-03-31
申请号：JP2009217010
申请日：2009-09-18
申请人： Renesas Electronics Corp , Tokyo Electron Ltd , ルネサスエレクトロニクス株式会社 , 東京エレクトロン株式会社
发明人： MORIYA TAKESHI , MATSUI HIDEAKI , SHIOYA MASAHIRO
IPC分类号： H01L21/3065 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a method of determining whether processing can be started by which predetermined processing on a semiconductor device manufactured from a substrate can be started in a high-yield state. SOLUTION: A substrate processing apparatus 10 includes a chamber 11 which accommodates a wafer W and an exhaust system 14 which exhausts the chamber 11. The substrate processing apparatus 10 performs seasoning processing in an atmosphere of higher temperature and/or an atmosphere of lower pressure than plasma etching processing for manufacturing the semiconductor device repeatedly as many times as predetermined times after cleaning constituents of the chamber 11, measures the number of particles flowing in a roughing pumping line 15 of the exhaust system 14 and monitors an extent of variation in the measured number of particles over time, and determines that the plasma etching processing can be started when a monitored extent of a decrease in the number of particles changes. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种确定是否可以开始处理的方法，通过对从基板制造的半导体器件的预定处理能够以高收益状态开始。＆lt; P＆gt;解决方案：基板处理装置10包括容纳晶片W的室11和排出室11的排气系统14.基板处理装置10在较高温度和/或气氛的气氛中进行调味处理在清洁室11的成分之后反复进行多次预定时间的半导体装置的等离子体蚀刻处理的压力低的措施，测量在排气系统14的粗抽泵管线15中流动的粒子的数量，并监视排气系统14的变化程度随着时间的推移测量的颗粒数量，并且当监测到的颗粒数量的减少的程度改变时，确定等离子体蚀刻处理可以开始。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2011035119A Device and method for cleaning substrate 审中-公开
标题翻译：用于清洁基板的装置和方法
公开(公告)号：JP2011035119A
公开(公告)日：2011-02-17
申请号：JP2009179019
申请日：2009-07-31
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUI HIDEAKI , MORIYA TAKESHI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method for cleaning a substrate which removes foreign matter adhering to a substrate without causing pattern falling.
SOLUTION: In this method for cleaning a substrate, a substrate is mounted on a mounting base (step S1); an organic substance, for instance, phthalocyanine having chemical bonding nature to a predetermined metal is supplied to the substrate mounted on the mounting base in a vapor state (step S2); energy for accelerating generation of a bonding substance between foreign matter adhering to the substrate and containing metal and the organic substance is supplied to the substrate (step S3); and the bonding substance is volatilized from the substrate by heating the substrate mounted on the mounting base to a predetermined temperature (step S4).
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种清洁衬底的方法，其去除附着在衬底上的异物而不会引起图案掉落。解决方案：在这种清洗基板的方法中，将基板安装在安装基座上（步骤S1）; 将有机物质，例如具有与预定金属的化学键合性质的酞菁以蒸汽状态供应到安装在安装基座上的基板（步骤S2）; 向基板供给用于加速产生附着于基板的异物和含有金属与有机物之间的结合物质的能量（步骤S3）。并且通过将安装在安装基板上的基板加热到预定温度，粘结物质从基板挥发（步骤S4）。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2011211067A Substrate treatment apparatus and substrate removal device to be used for the same 审中-公开
标题翻译：基板处理装置和用于其的基板去除装置
公开(公告)号：JP2011211067A
公开(公告)日：2011-10-20
申请号：JP2010078985
申请日：2010-03-30
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUI HIDEAKI , MORIYA TAKESHI
IPC分类号： H01L21/683 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To prevent the generation of a crack or a particle on the back face of a substrate without generating the position deviation of the substrate.SOLUTION: This substrate treatment apparatus is provided with a plurality of lift pins 200 formed so as to be freely projected retreated from the surface of a substrate placing stand 120 for lifting up and removing the substrate from the substrate placing stand, and a lifter to elevate the lift pins. Each of the lift pins is constituted so that the top end is unidirectionally movable, and arranged so that the movable direction is matched with a direction in which the heated substrate is cooled and contracted when the substrate is lifted up by each lift pin.
摘要翻译：要解决的问题：为了防止在基板的背面产生裂纹或颗粒而不产生基板的位置偏差。解决方案：该基板处理装置设置有多个提升销200，其形成为自由地从基板放置台120的表面退出，用于提升和从基板放置台移除基板，以及提升器以升高升降销。每个提升销的构造使得顶端是单向移动的，并且被布置成使得当基板被每个升降销提升时，可移动方向与被加热的基板被冷却和收缩的方向相匹配。

5. 发明专利

JP2011187704A Substrate wiring method, and semiconductor manufacturing device 有权
标题翻译：基板接线方法和半导体制造装置
公开(公告)号：JP2011187704A
公开(公告)日：2011-09-22
申请号：JP2010051736
申请日：2010-03-09
申请人： Iwatani Internatl Corp , Tokyo Electron Ltd , 岩谷産業株式会社 , 東京エレクトロン株式会社
发明人： HOSHINO SATOHIKO , MATSUI HIDEAKI , NARISHIMA MASAKI
IPC分类号： H01L21/285 , C23C14/32 , H01L21/28 , H01L21/3065 , H01L21/3205 , H01L23/52
CPC分类号： H01L21/76814 , C23C14/046 , C23C14/221 , C23C16/0281 , H01L21/02063 , H01L21/28556 , H01L21/76843 , H01L21/76877 , H01L21/76898 , H01L23/5222 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a substrate wiring method capable of embedding Cu down to a bottom part of a wiring pattern formed on the substrate. SOLUTION: The method of wiring the substrate with the wiring pattern formed in a treatment container 100 which is maintained in a vacuum includes a pre-process of cleaning the wiring pattern on a wafer with a desired cleaning gas, and an embedding process of embedding metal nano-particles into the wiring pattern using a clustered metal gas (a metal gas cluster Cg) after the pre-process. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够将Cu嵌入到形成在基板上的布线图案的底部的基板布线方法。解决方案：将保持在真空中的处理容器100中形成的布线图案布线到基板的方法包括用所需的清洁气体清洁晶片上的布线图案的预处理和嵌入处理在预处理之后使用聚集金属气体（金属气体簇Cg）将金属纳米粒子嵌入布线图案中。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2010212585A Substrate cleaning method 有权
标题翻译：基板清洗方法
公开(公告)号：JP2010212585A
公开(公告)日：2010-09-24
申请号：JP2009059330
申请日：2009-03-12
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUI HIDEAKI , MORIYA TAKESHI , NISHIMURA EIICHI , KAWAGUCHI SHINICHI , YAMAWAKI JUN , MIYAUCHI KUNIO
IPC分类号： H01L21/304 , B08B3/08 , B08B3/10 , B08B3/14 , B08B7/00 , H01L21/3065
CPC分类号： H01L21/02101 , H01L21/02071 , H01L21/67051 , H01L21/67109
摘要： PROBLEM TO BE SOLVED: To provide a substrate cleaning method that is implemented with simple device configurations, and cleans a substrate having a fine pattern formed for a short time, without exerting any adverse influence on the fine pattern.
SOLUTION: Cleaning processing on a wafer W as the substrate having the fine pattern formed on a surface is carried out through: a conveyance step of conveying the wafer W from a processing chamber for performing predetermined processing on a surface of the wafer W to a cleaning chamber for cleaning the wafer W; a cooling step of cooling the wafer W in the cleaning chamber down to predetermined temperature; and a superfluid cleaning step of supplying superfluid helium as a superfluid to the surface of the wafer W and making the superfluid helium flow out from the surface of the wafer W to flush away contaminants in the fine pattern.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种以简单的装置结构实现的基板清洗方法，并且清洁具有短时间形成的精细图案的基板，而不会对精细图案产生不利影响。解决方案：通过以下步骤执行在具有形成在表面上的精细图案的基板上的晶片W上的清洁处理：将晶片W从用于执行预定处理的处理室输送到晶片W的表面上的输送步骤到用于清洁晶片W的清洁室; 将清洗室内的晶片W冷却至规定温度的冷却工序; 以及将超流体氦作为超流体供给到晶片W的表面并使超流体氦从晶片W的表面流出的超流体清洗工序，以冲洗精细图案中的污染物。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2012191904A Chemical substance detection sensor and chemical substance detection method 审中-公开
标题翻译：化学物质检测传感器和化学物质检测方法
公开(公告)号：JP2012191904A
公开(公告)日：2012-10-11
申请号：JP2011059370
申请日：2011-03-17
申请人： Tokyo Electron Ltd , Kenji Sakurai , Hidefumi Mitsuno , Ryohei Kanzaki , 光野秀文 , 東京エレクトロン株式会社 , 櫻井健志 , 神崎亮平
发明人： GOMI SHINICHI , MATSUI HIDEAKI , OSHIMA YASUHIRO , HAYASHI TERUYUKI , SATO HIROSHI , SAKURAI KENJI , MITSUNO HIDEFUMI , KANZAKI RYOHEI
IPC分类号： C12Q1/02 , C12N15/09 , G01N21/64 , G01N27/416 , G01N33/483 , G01N33/53 , G01N37/00
摘要： PROBLEM TO BE SOLVED: To provide a chemical substance detection sensor having high sensitivity, which is small and inexpensive and to provide a chemical substance detection method.SOLUTION: There is provided the chemical substance detection sensor which detects a specific chemical substance and has an ion channel type receptor protein that is collected from an organism and binds to the specific chemical substance.
摘要翻译：要解决的问题：提供一种小而便宜且具有高灵敏度的化学物质检测传感器，并提供化学物质检测方法。提供了检测特定化学物质的化学物质检测传感器，并具有从生物体收集并结合特定化学物质的离子通道型受体蛋白质。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2012106216A Filter for filtration, and method for manufacturing the same 审中-公开
标题翻译：用于过滤的过滤器及其制造方法
公开(公告)号：JP2012106216A
公开(公告)日：2012-06-07
申请号：JP2010258733
申请日：2010-11-19
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUI HIDEAKI , MORIYA TAKESHI
IPC分类号： B01D71/28 , B01D69/00 , B01D69/10 , B01D69/12
CPC分类号： B01D69/10 , B01D71/76
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a filter for filtration with which service water and fresh water can simply be obtained.SOLUTION: Fine pores 11 of a ceramic substrate 12 having the fine pores 11 are filled with a mixture 13 of polymer A and polymer B; the polymer A and polymer B are copolymerized to produce a diblock copolymer 14 having a plurality of fine cylinders of the polymer A in the polymer B, which is a mother material; and the produced diblock copolymer 14 is immersed in a solvent which dissolves the polymer A but not the polymer B to elute the polymer A and thus form fine pores 16 with an opening diameter equal to the diameter of the cylinders in the mother material 15.
摘要翻译：要解决的问题：提供一种用于制造用于过滤的过滤器的方法，其中可以简单地获得使用水和淡水。解决方案：具有细孔11的陶瓷基板12的细孔11填充有聚合物A和聚合物B的混合物13; 聚合物A和聚合物B共聚以制备在作为母材的聚合物B中具有多个聚合物A的精细汽缸的二嵌段共聚物14; 将生成的二嵌段共聚物14浸渍在溶解聚合物A而不是聚合物B的溶剂中以洗脱聚合物A，从而形成孔径等于母料15中的圆筒直径的细孔16。 P>版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2011171584A Substrate cleaning method and substrate cleaning device 有权
标题翻译：基板清洗方法和基板清洗装置
公开(公告)号：JP2011171584A
公开(公告)日：2011-09-01
申请号：JP2010035053
申请日：2010-02-19
申请人： Iwatani Internatl Corp , Tokyo Electron Ltd , 岩谷産業株式会社 , 東京エレクトロン株式会社
发明人： MATSUI HIDEAKI , MORIYA TAKESHI , NARISHIMA MASAKI
IPC分类号： H01L21/304
CPC分类号： H01L21/02057 , B08B5/02 , H01L21/02046 , H01L21/67028
摘要： PROBLEM TO BE SOLVED: To provide a substrate cleaning method preventing degradation of a substrate and a film formed on the substrate while removing a foreign material adhered to the substrate. SOLUTION: A cleaning gas is sprayed toward a wafer W with the foreign material 22 adhered and disposed in an almost vacuum atmosphere at any one of pressures of 0.3-2.0 MPa to form a cluster 21 formed of a plurality of gas molecules 20 and the cluster 21 is brought into collision with the wafer W in a not-ionized state. COPYRIGHT: (C)2011,JPO&INPIT

10. 发明专利

JP2010103444A Substrate cleaning method and apparatus 有权
标题翻译：基板清洗方法和装置
公开(公告)号：JP2010103444A
公开(公告)日：2010-05-06
申请号：JP2008276027
申请日：2008-10-27
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUI HIDEAKI , MORIYA TAKESHI
IPC分类号： H01L21/304
CPC分类号： B08B7/0071 , B08B7/0064 , B08B7/02 , H01L21/67028 , H01L21/67115
摘要： PROBLEM TO BE SOLVED: To provide a substrate cleaning method capable of preventing pattern collapse. SOLUTION: The substrate cleaning method for cleaning and removing particles P that adhere on the surface of a wafer W has a heating step of heating the wafer W to peel the particle P, adhering on the surface of the wafer W by a thermal stress from the surface of the wafer W; a desorption step of desorbing the particles P from the surface of the wafer W by the temperature gradient caused near to the surface of the wafer W; and a step of collecting the particles P for collecting the particles P desorbed from the surface of the wafer W by a collecting plate 13 arranged opposite to the wafer W. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够防止图案塌陷的基板清洗方法。解决方案：用于清洁和去除附着在晶片W表面上的颗粒P的基板清洗方法具有加热步骤，加热晶片W以剥离颗粒P，通过热粘附在晶片W的表面上来自晶片W的表面的应力; 解离步骤，通过在晶片W的表面附近引起的温度梯度将颗粒P从晶片W的表面解吸; 以及通过与晶片W相对设置的收集板13收集用于收集从晶片W的表面脱离的颗粒P的颗粒P的步骤。（C）2010，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式