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11. 发明专利

JPH04139723A MAGNETRON PLASMA TREATMENT DEVICE 失效
公开(公告)号：JPH04139723A
公开(公告)日：1992-05-13
申请号：JP26129690
申请日：1990-09-29
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD
发明人： HORIOKA KEIJI , YOSHIDA YUKIMASA , KUBOTA SHINJI , KUMAGAI HIROMI , ARAMI JIYUNICHI
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065
摘要： PURPOSE:To improve the in-plane uniformity of such treatment as etching rate, etc., and, at the same time, to prevent the occurrence of a defective etched shape by performing magnetron plasma treatment, with the pressure in a treatment vessel being set at a prescribed value. CONSTITUTION:The pressure in a chamber is set at 10-100mTorr at the time of performing magnetron etching. The preferable pressure in the chamber is 30-75mTorr, with the most preferable pressure being 40-60mTorr. Magnetic lines of force passed through the space between parallel plate electrodes 22 and 24 are formed between the outer faces at both ends of a permanent magnet 30 in the direction of magnetization and the magnetic field (with a density of magnetic lines of force of, for example, about 100G) formed near a wafer 14 is parallel with the surface of the wafer 14 and perpendicular to the electric field between the electrodes 22 and 24. When the permanent magnet 30 is rotationally driven, a parallel magnetic field can be formed uniformly over the entire surface of the wafer 14.

12. 发明专利

JPH05248920A 失效
公开(公告)号：JPH05248920A
公开(公告)日：1993-09-28
申请号：JP20480391
申请日：1991-07-19
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： NOZAWA TOSHIHISA , ARAMI JIYUNICHI , YOSHIDA YUKIMASA , HORIOKA KEIJI
IPC分类号： C23C14/54 , B01J3/00 , C23C16/46 , C23F4/00 , G01F23/22 , G01F23/24 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide a liquid level detecting method and a device which can realize highly reliable liquid level detection by detecting a temperature without depending on mechanical contact with liquid. CONSTITUTION:A liquid level detecting sensor 41 which detects the liquid level of liquid to be detected stored in a liquid nitrogen container 6 is arranged on the inside wall of the container. The liquid level detecting sensor 41 is provided with a thermocouple 42 serving as a temperature measuring terminal and a heater 43 to heat the thermocouple 42. When the liquid level detecting sensor 41 is in contact with liquid nitrogen, liquid nitrogen deprives the heater 43 of heat and when it has no contact therewith the lost heating value is reduced, so that there is a more significant difference in temperature measured by the thermocouple 42 than in case that no heater 43 exists and liquid level detection with no measurement error can be performed.

13. 发明专利

JPH0529268A MAGNETRON PLASMA PROCESSING DEVICE 失效
公开(公告)号：JPH0529268A
公开(公告)日：1993-02-05
申请号：JP20740791
申请日：1991-07-23
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： HORIOKA KEIJI , MATSUSHITA TAKAYA , NOZAWA TOSHIHISA
IPC分类号： H01L21/203 , C23C14/34 , H01L21/205 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To provide a magnetron plasma processing device which is able to process an object by generating the cycloidal movement of electrons uniform throuhout the surface of the processed object. CONSTITUTION:A second electrode is composed of a plane 30a parallel with a first electrode 12 and another plane 30b vertical to the electrode 12. When a power supply is turned ON, an electrical field possessed of a horizontal component is generated by the plane 30b at the peripheral part of a processed object placed on the first electrode 12. The horizontal component of this electric field induces the cycloidal movement of electrons in accordance with a Fleming's left-hand rule acting in concert with the vertical component of a magnetic field formed at the peripheral part of the processed object by a magnetic field generator 38. By this setup, the collision of electrons with gas molecules can be enhanced in frequency in a region where the vertical component of a magnetic field is large.

14. 发明专利

JPH04196529A PLASMA PROCESSING EQUIPMENT 失效
公开(公告)号：JPH04196529A
公开(公告)日：1992-07-16
申请号：JP33131890
申请日：1990-11-28
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD
发明人： HORIOKA KEIJI , YOSHIDA YUKIMASA , KOYAMA SHIRO
IPC分类号： H01L21/302 , H01J37/32 , H01J37/34 , H01L21/3065
摘要： PURPOSE:To obtain a plasma processing equipment capable of accurately detecting plasma processing in the case of plasma etching of low aperture ratio, by installing a monitoring means for monitoring the plasma processing on the basis of the outputs of a first and a second sensors. CONSTITUTION:Light of wavelength component whose light amount change caused by plasma processing is large is isolated from plasma light by a spectroscope 40, and its luminous intensity is detected by a first optical sensor 50. On the other hand, the luminous intensity of plasma light containing a various kinds of wavelength is detected by a second optical sensor 60. When plasma is detected on the basis of both detected values, erroneous detection can be prevented even if the intensity becomes lower than or equal to a specified luminous intensity, because the fluctuation of light intensity generated by external causes appear in both of the outputs I1, I2 of the first and the second optical sensors. In the vicinity of plasma end point, the output of the first sensor changes more largely than the output of the second sensor, so that the plasma end point can be monitored and detected. In particular, the end point of low aperture ratio plasma processing which can not be detected only by the change of the second sensor output can surely be monitored.

15. 发明专利

JPH06216070A PLASMA SURFACE TREATING DEVICE 失效
公开(公告)号：JPH06216070A
公开(公告)日：1994-08-05
申请号：JP658993
申请日：1993-01-19
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD
发明人： MITSUI TADASHI , SEKINE MAKOTO , HORIOKA KEIJI , ITO HITOSHI , HIROSE KEIZO , NAGASEKI KAZUYA , HIMORI SHINJI , MOCHIZUKI SHUJI
IPC分类号： H01L21/302
摘要： PURPOSE:To provide a plasma surface treating device which is capable of uniformly treating the surface of a work with plasma even if the work is large in diameter. CONSTITUTION:A plasma etching process is executed through such manner that electrons accelerated by an electron beam accelerating electrode 8 are made to irradiate a plasma source gas to generate plasma, and a semiconductor wafer 3 placed on a wafer holder 4 is etched with this plasma, wherein a reactive gas feed reservoir 17 equipped with blowoff holes and connected with a reaction gas supply source is provided in a film forming room.

16. 发明专利

JPH04350932A METHOD OF DRY ETCHING 失效
公开(公告)号：JPH04350932A
公开(公告)日：1992-12-04
申请号：JP12429791
申请日：1991-05-29
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD
发明人： HORI MASARU , HORIOKA KEIJI , OKANO HARUO , ITO MASAO , HIRATSUKA MASATO , ISHIKAWA YOSHIO
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/3213 , H01L23/52 , H01L29/423 , H01L29/43 , H01L29/49
摘要： PURPOSE:To provide a method of dry etching to provide good accuracy and selectivity in etching a laminated structure of a polysilicon film and a refractory metal film or its silicide film formed on an insulating thin film. CONSTITUTION:A laminated film of a polysilicon film 42 and a WSi2 film 43 is formed on an SiO2 film 41 on a silicon substrate 40. After a resist pattern 44 is applied, this substrate is placed in a vacuum chamber. Etching gas is introduced to the vacuum chamber, and an electric field is applied to cause an electric discharge for anisotropic etching of the laminated structure along the resist pattern 44. The etching gas for the WSi2 film 43 is a mixture of SF6 and Cl2 (4:6 to 7:3) with a flow rate of 20-150sccm at a high-frequency power density of 0.4-0.9W/cm . The etching gas for the polysilicon film 42 is Cl2.

17. 发明专利

JPH0482691A ARM TYPE CONVEYING DEVICE 失效
公开(公告)号：JPH0482691A
公开(公告)日：1992-03-16
申请号：JP19246490
申请日：1990-07-20
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： ENDO TAMIO , KIKUCHI KAZUO , SHIRAISHI TERUMASA , HORIOKA KEIJI , OKUMURA KATSUYA
IPC分类号： B25J9/00 , B25J9/06 , B25J13/00 , B25J19/00 , H01L21/68
摘要： PURPOSE:To easily recognize the deformation of a cantilever-like conveying arm that is prone to deformation with a few contact by providing a sensor for optically detecting the distance from a reference plane parallel to a conveying plane to the conveying arm. CONSTITUTION:The distance from a reference plane parallel to a conveying plane to a conveying arm 10 is optically detected by a sensor 50. When the detected distance is within an allowable value, it is verified that an object to be conveyed (for example, wafer) can be conveyed parallelly on a regular conveying plane L. On the other hand, when the detected distance exceeds the allowable value, it is easily understood that it can cause conveying troubles, and thus the conveying troubles can be prevented. Further, since the distance from the reference plane to the conveying arm is optically detected by the sensor 50, the deformation of the conveying arm can be detected in non-contact manner.

18. 发明专利

JPH07263413A PLASMA TREATMENT 失效
公开(公告)号：JPH07263413A
公开(公告)日：1995-10-13
申请号：JP4842494
申请日：1994-03-18
申请人： TOSHIBA CORP
发明人： TOMIOKA KAZUHIRO , HORIOKA KEIJI
IPC分类号： H05H1/46 , C23C14/35 , C23C16/50 , C23C16/511 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To enable the plasma treatment step to be performed by accelerating the treatment rate doing no damage to a workpiece at all even if a large area workpiece is to be processed. CONSTITUTION:The title plasma treater is provided with an exhaust means 17 vacuum-exhausting the treatment vessel 11 containing a workpiece 12, a gas leading-in means 8 fitted to the treatment vessel 11 for leading-in a treatment gas, magnetic field impressing means 19a, b for impressing the treatment means 11 with a magnetic field, potential measuring means 21a, b for measuring potential at least in the specific positions and an electric field impressing means for impressing the treatment vessel 11 with electric field as well as magnetic field adjusting means 22, 23, 24 for adjusting the magnetic field according to the potentials at least in the two specific positions so that the plasma may be produced by impressing the vessel 11 with the electric field for treating the treatment 12 using the plasma.

19. 发明专利

JPH0794466A SURFACE TREATING DEVICE 失效
公开(公告)号：JPH0794466A
公开(公告)日：1995-04-07
申请号：JP23389893
申请日：1993-09-20
申请人： TOSHIBA CORP
发明人： MITSUI TADASHI , SEKINE MAKOTO , HORIOKA KEIJI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide a surface treating device which can uniformly treat the surface of a wafer, etc., even when the wafer, etc., has a large diameter. CONSTITUTION:A surface treating device is provided with a reaction vessel 1, evacuating means which evacuates the reaction vessel and maintains the pressure in the reaction vessel at a low level, gas introducing means 4 and 5 which have multiple gas blowing-out holes in the reaction vessel and introduce gases into the reaction vessel, means which control the opening/closing of the gas blowing-out holes, means 6 which ionizes a cluster formed by the gases blown out from the gas blowing-out holes, and means 7 which takes out the ionized cluster and carries the cluster to a substrate to be treated set in the reaction vessel.

20. 发明专利

JPH0729871A METHOD AND APPARATUS FOR SURFACE TREATMENT 失效
公开(公告)号：JPH0729871A
公开(公告)日：1995-01-31
申请号：JP15529393
申请日：1993-06-25
申请人： TOSHIBA CORP
发明人： MITSUI TADASHI , SEKINE MAKOTO , HORIOKA KEIJI
IPC分类号： H01L21/306
摘要： PURPOSE:To provide a dry etching apparatus in which a problem that a substrate to be etched is damaged or the like is not caused. CONSTITUTION:The title apparatus is provided with a reaction chamber 1 in which a substrate 4 to be treated is housed, with a metal slender pipe 7 through which an electroconductive liquid used for the surface treatment of the substrate 4 to be treated flows and which is used as an electrode for formation of a first electric field, with a counter electrode 5, as an electrode for formation of a second electric field, which is installed at the lower part of the outflow port of the metal slender pipe 7, with variable voltage sources 17, 18 which apply a voltage between the metal slender pipe 7 and the counter electrode 5 and with an orifice 6 and skimmer 8 which are used to guide liquid drops flowing out from the outflow port of the metal slender pipe 7 to the surface of the substrate 4 to be treated.

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