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1. 发明专利

JPH07263413A PLASMA TREATMENT 失效
公开(公告)号：JPH07263413A
公开(公告)日：1995-10-13
申请号：JP4842494
申请日：1994-03-18
申请人： TOSHIBA CORP
发明人： TOMIOKA KAZUHIRO , HORIOKA KEIJI
IPC分类号： H05H1/46 , C23C14/35 , C23C16/50 , C23C16/511 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To enable the plasma treatment step to be performed by accelerating the treatment rate doing no damage to a workpiece at all even if a large area workpiece is to be processed. CONSTITUTION:The title plasma treater is provided with an exhaust means 17 vacuum-exhausting the treatment vessel 11 containing a workpiece 12, a gas leading-in means 8 fitted to the treatment vessel 11 for leading-in a treatment gas, magnetic field impressing means 19a, b for impressing the treatment means 11 with a magnetic field, potential measuring means 21a, b for measuring potential at least in the specific positions and an electric field impressing means for impressing the treatment vessel 11 with electric field as well as magnetic field adjusting means 22, 23, 24 for adjusting the magnetic field according to the potentials at least in the two specific positions so that the plasma may be produced by impressing the vessel 11 with the electric field for treating the treatment 12 using the plasma.

2. 发明专利

JPH0794466A SURFACE TREATING DEVICE 失效
公开(公告)号：JPH0794466A
公开(公告)日：1995-04-07
申请号：JP23389893
申请日：1993-09-20
申请人： TOSHIBA CORP
发明人： MITSUI TADASHI , SEKINE MAKOTO , HORIOKA KEIJI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide a surface treating device which can uniformly treat the surface of a wafer, etc., even when the wafer, etc., has a large diameter. CONSTITUTION:A surface treating device is provided with a reaction vessel 1, evacuating means which evacuates the reaction vessel and maintains the pressure in the reaction vessel at a low level, gas introducing means 4 and 5 which have multiple gas blowing-out holes in the reaction vessel and introduce gases into the reaction vessel, means which control the opening/closing of the gas blowing-out holes, means 6 which ionizes a cluster formed by the gases blown out from the gas blowing-out holes, and means 7 which takes out the ionized cluster and carries the cluster to a substrate to be treated set in the reaction vessel.

3. 发明专利

JPH0729871A METHOD AND APPARATUS FOR SURFACE TREATMENT 失效
公开(公告)号：JPH0729871A
公开(公告)日：1995-01-31
申请号：JP15529393
申请日：1993-06-25
申请人： TOSHIBA CORP
发明人： MITSUI TADASHI , SEKINE MAKOTO , HORIOKA KEIJI
IPC分类号： H01L21/306
摘要： PURPOSE:To provide a dry etching apparatus in which a problem that a substrate to be etched is damaged or the like is not caused. CONSTITUTION:The title apparatus is provided with a reaction chamber 1 in which a substrate 4 to be treated is housed, with a metal slender pipe 7 through which an electroconductive liquid used for the surface treatment of the substrate 4 to be treated flows and which is used as an electrode for formation of a first electric field, with a counter electrode 5, as an electrode for formation of a second electric field, which is installed at the lower part of the outflow port of the metal slender pipe 7, with variable voltage sources 17, 18 which apply a voltage between the metal slender pipe 7 and the counter electrode 5 and with an orifice 6 and skimmer 8 which are used to guide liquid drops flowing out from the outflow port of the metal slender pipe 7 to the surface of the substrate 4 to be treated.

4. 发明专利

JPH06347997A METHOD FOR CORRECTING DEFECT OF STRUCTURAL BODY 失效
公开(公告)号：JPH06347997A
公开(公告)日：1994-12-22
申请号：JP27449193
申请日：1993-11-02
申请人： TOSHIBA CORP
发明人： NAKAMURA HIROKO , KOMANO HARUKI , KARIYA MITSUYO , INOUE SOICHI , SUGIHARA KAZUYOSHI , MORI ICHIRO , HORIOKA KEIJI , MIYOSHI MOTOSUKE , WATANABE TORU , OKANO HARUO , OKUMURA KATSUYA , TAKIGAWA TADAHIRO , YAMAZAKI YUICHIRO
IPC分类号： B23K15/00 , G03F1/29 , G03F1/30 , G03F1/72 , G03F1/74 , H01J37/305 , H01L21/027 , H01L21/30 , G03F1/08
摘要： PURPOSE:To provide the method for correcting a structural body by flatly correcting either of a projecting defect or recessed defect flush with a substrate surface. CONSTITUTION:This method for correcting the defect of the structural body which corrects the projecting defect 102 generated in the structural body formed with desired patterns on a substrate 101 includes a stage for forming a first thin film 104 consisting of a material different from the substrate 101 on the substrate 101 around the projecting defect 102 or so as to be approximate to the projecting defect 102, a stage for forming a second thin film 105 on the projecting defect 102 and the first thin film 104 and flattening the front surface thereof, a stage for simultaneously removing the projecting defect 102 and the respective thin films in the upper part thereof and the peripheries thereof by using charged particle ray and a stage for removing the respective thin films remaining in this removing stage.

5. 发明专利

JPH05326370A PROJECTION ALIGNER 失效
公开(公告)号：JPH05326370A
公开(公告)日：1993-12-10
申请号：JP18667392
申请日：1992-07-14
申请人： TOSHIBA CORP
发明人： INOUE SOICHI , FUJISAWA TADAHITO , SATO TAKASHI , TAMAMUSHI SHUICHI , HORIOKA KEIJI
IPC分类号： H01L21/30 , G03F7/20 , H01L21/027
摘要： PURPOSE:To sufficiently increase the depth of focus of the title aligner even when the size of an L/S pattern is large and to enhance the exposure accuracy of the title aligner. CONSTITUTION:In a projection aligner, a pattern on a mask is projected and exposed onto a wafer via a projection optical system. In the projection aligner, a special disphragm 9' (a four port filter) by means of which the distribution of the intensity inside a radiation face of a light source is symmeteric, four times, with respect to an optical axis and which makes the intensity large in four regions outside the optical axis is installed as a secondary light source with which the mask R is irradiated, and a pattern by using a semitransparent film is formed on a lighttransmitting substrate. Then, the following halftone mask is used: the phase difference between light transmitted through the semitransparent film and light transmitted through the light-transmitting substrate satisfies the relationship of 180X(2n+1)+ or -30 deg. [where (n) is an integer]; and the amplitude transmission factor of the semitransparent film satisfies the relationship of 0.01XT0

6. 发明专利

JPH05291184A 失效
公开(公告)号：JPH05291184A
公开(公告)日：1993-11-05
申请号：JP7173392
申请日：1992-03-27
申请人： TOSHIBA CORP
发明人： SHODA HISAHIRO , HORIOKA KEIJI
IPC分类号： H01L21/285 , H01L21/28 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To bury a W film in all connecting holes up to the surface without introducing a disconnection malfunction, etc., even if there are a plurality of the holes having different depths. CONSTITUTION:The method for manufacturing a semiconductor device comprises the steps of forming connecting holes 33a, 33 having different depths in an interlayer insulating film 32 provided on a substrate 31, so selectively forming a W film 34 in the holes 33a, 33 as to bury the film 34 up to an upper surface of the hole 33a by using a selective CVD method, coating the film 32 with resist 35, etching the film 34 and the resist 35 by discharging etching gas containing chlorine and sulfur hexafluoride, and burying the film 34 in the holes 33a, 33.

7. 发明专利

JPH05166770A DRY ETCHING 失效
公开(公告)号：JPH05166770A
公开(公告)日：1993-07-02
申请号：JP35207491
申请日：1991-12-13
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： TAWARA YOSHIFUMI , HIRANO YOSHIHISA , HASEGAWA ISAHIRO , HORIOKA KEIJI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To improve etching speed SiO2 or the like so as to avoid etching of Si and a photoresist by setting the temperature of a body to be treated at the time of etching below 0 deg. and using mixed gas of gas containing carbon and oxygen having the oxidation number nor exceeding 4 and halogen group gas as plasma gas. CONSTITUTION:Cooling gas is introduced into the piping 36 to cool a first susceptor 12 so as to control a temperature of a wafer 10 to a prescribed temperature not exceeding 0 deg.C through it. with the surface 30a of the upper chamber 30 as a cathode electrode and the surface of the first susceptor 12 as an anode electrode a magnetron plasma etching device of an RIE system is established. Gas containing carbon and oxygen having the oxidation number not exceeding 4, for instance, mixed gas of Co and halogen group gas, for instance CHF3 gas, is mixed as etching gas to be introduced from an etching gas leading-in part 30b into the chamber. This etching gas heights etching speed and a selection ratio to Si and a photoresist of a film to be etched.

8. 发明专利

JPH0513374A DRY ETCHING DEVICE AND METHOD 失效
公开(公告)号：JPH0513374A
公开(公告)日：1993-01-22
申请号：JP27708891
申请日：1991-09-27
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD
发明人： HORIOKA KEIJI , HASEGAWA ISAHIRO , OKANO HARUO , OKUMURA KATSUYA , KUBOTA SHINJI , KUMAGAI HIROMI , ARAMI JIYUNICHI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To enable the title dry etching method with high precision to be applied by a method wherein an even magnetic field is formed on the whole surface of an element to be processed so as to induce even plasma. CONSTITUTION:A wafer 14 to be arranged in a vacuum vessel (processing chamber) 20 is mounted on a lower electrode 22 while an upper electrode 24 is arranged oppositely to the wafer 14. Next, a permanent magnet 30 is magnetized to have S, N polarities on both ends of a magnetic block so that a horizontal magnetic field orthogonal to the perpendicular electric field generated in the space between the electrodes 22 and 24 may be formed by providing a dent depressed stepwise or in taper shape. Finally, when an etching gas is fed to the space between the electrodes 22 and 24, a plasma with even density can be induced on the whole wafer 14 surface thereby enabling the title dry etching method with high precision to be applied.

9. 发明专利

JPH04139722A MAGNETRON PLASMA TREATMENT DEVICE 失效
公开(公告)号：JPH04139722A
公开(公告)日：1992-05-13
申请号：JP26129590
申请日：1990-09-29
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD
发明人： HORIOKA KEIJI , OKUMURA KATSUYA , KUBOTA SHINJI , KUMAGAI HIROMI , ARAMI JIYUNICHI
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065
摘要： PURPOSE:To make the thickness of a plasma sheath uniform so as to improve the in-plane uniformity of such a treatment as etching rate, etc., by providing a member which discharges secondary electrons by utilizing the collision of electrons on the outer periphery of an object to be treated. CONSTITUTION:A ring-like member 38 which discharges secondary electrons by utilizing collisions of electrons and, at the same time, forms an approach- running section for the secondary electrons is provided on the outer periphery of a wafer 14 where the member 38 faces plasma. Magnetic lines of force passing through the space between parallel plate electrodes 22 and 24 are formed between outer surfaces of a permanent magnet 30 on both end sides in the direction of magnetization and the magnetic field (with a density of magnetic lines of force of, for example, about 100G) formed near the wafer 14 is parallel to the surface of the wafer 14 and perpendicular to the electric field between the electrodes 22 and 24. When the permanent magnet 30 is rotationally driven, a parallel magnetic field can be formed uniformly on the entire surface of the wafer 14.

10. 发明专利

JPH0461333A SURFACE TREATING 失效
公开(公告)号：JPH0461333A
公开(公告)日：1992-02-27
申请号：JP17210290
申请日：1990-06-29
申请人： TOSHIBA CORP
发明人： OIWA NORIHISA , HORIOKA KEIJI , OKANO HARUO
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/312 , H01L21/314
摘要： PURPOSE:To make it possible to form a thin film of fluorocarbon polymer, while controlling the accumulated shape on a substrate to be treated by keeping a temperature of a substrate below the condensation temperature of polymer with length of principal chain of 6. CONSTITUTION:A silicon substrate 101 with a form of a trench 102 is installed in a thin-film forming device, and CHF3 gas is impressed to the upper electrode 30 from a gas induction port 12 with flowing quantity of 50SCCM, pressure of 40mTorr, and RF electric power 450. As a result, a thin film of fluorocarbon polymer 103 is formed. When the pressure is less than 40mTorr and a tempera ture of a substrate is below -70 deg.C, the polymer with the length of principal chain n=less than 6 can become liquid phase. When the temperature of the substrate is less than -70 deg.C, the inside of the trench is reclaimed with a thin film of fluorocarbon polymer 103, and flat accumulated shape 'a' can be obtained. When the temperature of the substrate is more than -70 deg.C and less than 90 deg.C, the thin film of fluorocarbon polymer 103 which is excellent in step coverage can be obtained. Furthermore, when the temperature of the substrate is more than 90 deg.C, the thin film of fluorocarbon polymer cannot be formed on the side wall of the trench.

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