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11. 发明专利

JPS572875A HARD CASE OF WRITE WATCH 失效
公开(公告)号：JPS572875A
公开(公告)日：1982-01-08
申请号：JP7703780
申请日：1980-06-05
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： DOI YOSHIHIKO , DOI AKIRA , KOBAYASHI AKINORI
IPC分类号： C23C14/06 , C23C30/00 , G04B37/22
摘要： PURPOSE:To obtain the case of a wrist watch having a fine color tone and almost free from abrasion and corrosion by coating the polished or mirror-finished surface of a case made of sintered body with a B-1 type solid soln. substance consisting of one or more among B, C, N and O and of Ti by a vapor depositing method. CONSTITUTION:The polished or mirror-finished surface of the case of a wrist watch made of hard sintered body with superior corrosion resistance is coated with a B-1 type solid soln. substance consisting of >=1 kinds of elements selected from B, C, N and O and of Ti by a vapor depositing method. Among solid solns. TiN, TiO and Ti(NxOy) are golden, and the color tone of Ti(CxNy) and Ti(CxNyOz) is subtly changed from a golden color to a reddish purple color through a brown color by varying the values of x, y and z. As the vapor depositing method an ion plating method is applied preferably.

12. 发明专利

JPS5167245A Chokogokinno netsukansetsugoho 失效
标题翻译： CHOKOGOKINNO NETSUKANSETSUGOHO
公开(公告)号：JPS5167245A
公开(公告)日：1976-06-10
申请号：JP14128874
申请日：1974-12-09
申请人： Sumitomo Electric Industries
发明人： DOI YOSHIHIKO , HIRAOKA MASAKI , SAITO YASUHIRO
IPC分类号： B23K20/00

13. 发明专利

JPH06268116A HEAT RADIATING SUBSTRATE FOR SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH06268116A
公开(公告)日：1994-09-22
申请号：JP5390793
申请日：1993-03-15
申请人： TOKYO TUNGSTEN KK , SUMITOMO ELECTRIC INDUSTRIES
发明人： SHIBATA KENICHIRO , KAWAMOTO KENICHIRO , FUKUI AKIRA , SAKAGAMI HITOSHI , DOI YOSHIHIKO
IPC分类号： H01L23/373 , H05K7/20
摘要： PURPOSE:To provide an inexpensive heat radiating substrate for semiconductor devices having excellent heat conductivity, a light weight, and such a coefficient of thermal expansion that does not cause any trouble when the substrate is incorporated in a semiconductor device or a semiconductor device is operated. CONSTITUTION:Sandwich materials 1 are stuck to both surfaces of a base material 2 by the hot uniaxial working method. The material 1 are composed of a metallic material containing at least aluminum. The base material 2 is composed of one kind of metallic material selected out of W, Mo, and Fe-Ni-Co.

14. 发明专利

JPH02224264A MANUFACTURE OF SEMICONDUCTOR ELEMENT MOUNTING SUBSTRATE 失效
公开(公告)号：JPH02224264A
公开(公告)日：1990-09-06
申请号：JP1155090
申请日：1990-01-20
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： DOI YOSHIHIKO , OGASA NOBUO , IGARASHI TADASHI , OTSUKA AKIRA
IPC分类号： H01L23/36 , H01L23/373
摘要： PURPOSE:To provide a title method with which the title substrate can sufficiently deal with integrated circuits made large-sized and high density by forming an electrically insulating inorganic coated film into a specific thickness by a PVD or CVD process on the surface side of a particular metal plate or a composite metal plate. CONSTITUTION:An electrically insulating inorganic coated film 2 is formed into a 0.1-20mum thickness by a physical vapor deposition(PVD) or chemical vapor deposition(CVD) process on the surface or side of a metal plate 1 selected among a group comprising Mo, W, and coval, 42 alloy (42% Ni-Fe), copper cladding coval cladding copper, copper cladding 42 alloy cladding copper, and 42 alloy cladding copper cladding 42 alloy, all having a 3.0-9.0X10 cm/cm. deg.C thermal expansion coefficient. Accordingly, a substrate 3 approximates a mounted semiconductor device 6 in its thermal expansion coefficient, and hence it can reduce the influence of any stress caused by mismatching of thermal expansion and further it can provide desired electrical insulating property. Hereby, a title substrate can deal with the semiconductor device 6 which has been made high density and large-sized.

15. 发明专利

JPS631271B2 失效
公开(公告)号：JPS631271B2
公开(公告)日：1988-01-12
申请号：JP7948881
申请日：1981-05-25
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： YOSHIOKA TAKESHI , DOI AKIRA , DOI YOSHIHIKO , FUJIMORI NAOHARU
IPC分类号： C04B35/565 , C04B35/56

16. 发明专利

JPS62216969A FIBER REINFORCED SI3N4 CERAMICS AND MANUFACTURE 失效
公开(公告)号：JPS62216969A
公开(公告)日：1987-09-24
申请号：JP5705986
申请日：1986-03-17
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： YAMAKAWA AKIRA , DOI YOSHIHIKO , MIYAKE MASAYA
IPC分类号： C04B35/584 , C04B35/58 , C04B35/591

17. 发明专利

JPS6082602A MANUFACTURE OF EXTERNAL CYLINDER OF ROCKET COMBUSTOR 失效
公开(公告)号：JPS6082602A
公开(公告)日：1985-05-10
申请号：JP18880483
申请日：1983-10-07
申请人： NAT AEROSPACE LAB , MASUDA YOSHIMICHI , WATANABE KAGOZOU , TAKEGAWA JIYUNJIROU , SUMITOMO ELECTRIC INDUSTRIES
发明人： SHINNO MASAYUKI , SUZUKI AKIO , YATSUYANAGI NOBUYUKI , KUMAKAWA AKINAGA , SASAKI MASAKI , TAMURA HIROSHI , ONO FUMIE , MASUDA YOSHIMICHI , WATANABE KAGOZOU , TAKEGAWA JIYUNJIROU , DOI YOSHIHIKO , KUROISHI ATSUSHI , TAKEDA YOSHINOBU , OCHI SHIGEKI
IPC分类号： B22F7/08 , B22F5/00 , B22F5/10 , B22F7/06 , F02K9/62 , F02K9/64
摘要： PURPOSE:To manufacture a minute and solid external cylinder of a combustion chamber with hydrostatic pressure molding at comparatively low pressure by furnishing a reinforcing external cylinder to the outside of a Cu or an Ag-Sn Cu alloy sintered layer. CONSTITUTION:A hollow cylinder 1 made of oxygen-free copper is worked into an internal cylinder having a coolant passage groove 2 by numerical control mechanical cutting. A molten filler of Wood's metal 7 is poured into the groove 2 and the inside of the internal cylinder 1, and casted as a core. The surplus Wood's metal 7 is removed again by machining. The machined body is placed in a cylindrical mold 8, and copper powder 3 is packed into the clearance between the mold 8 and the cylinder 1. Then a powder packed layer is compression molded by hydrostatic pressure molding.

18. 发明专利

JPS6024335A MANUFACTURE OF SINTERED HARD ALLOY 失效
公开(公告)号：JPS6024335A
公开(公告)日：1985-02-07
申请号：JP13229483
申请日：1983-07-20
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： TOBIOKA MASAAKI , SUZUKI HISASHI , DOI YOSHIHIKO
IPC分类号： B22F1/00 , C22C1/05 , C22C29/00 , C22C29/02 , C22C29/04 , C22C29/06 , C22C29/08 , C22C29/16 , C22C32/00
摘要： PURPOSE:To improve the heat resistance by sintering a hard compound consisting of one or more kinds of elements selected among the IVa, Va and VIa group transition metallic elements in the periodic table and of one or more among C, N and O with an Fe group metal contg. Y2O3 as a binding metal. CONSTITUTION:A powdery Fe group metal is mixed with Y2O3 powder to prepare a powdery binding metal, and a powdery hard compound consisting of one or more kinds of metallic elements selected among the IVa, Va and VIa group transition metallic elements in the periodic table and of one or more kinds of nonmetallic elements selected among C, N and O is prepd. The powdery hard compound is mixed with the powdery binding metal, and the mixture is molded and sintered. By this method, improved heat resistance is provided.

19. 发明专利

JPS59111753A Artificial medical material and use thereof 失效
标题翻译：人造医学材料及其用途
公开(公告)号：JPS59111753A
公开(公告)日：1984-06-28
申请号：JP22077182
申请日：1982-12-15
申请人： Sumitomo Electric Industries
发明人： KOKITA HIDEO , DOI YOSHIHIKO , DOI AKIRA
IPC分类号： A61C8/00 , A61L27/00

20. 发明专利

JPS58141877A ELECTRODE FOR WELDING AND BRAZING 失效
公开(公告)号：JPS58141877A
公开(公告)日：1983-08-23
申请号：JP2669582
申请日：1982-02-19
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： IGARASHI TADASHI , DOI YOSHIHIKO , ICHIYANAGI HAJIME
IPC分类号： B23K11/30 , B23K35/02 , B23K35/14
摘要： PURPOSE:To obtain an electrode for welding and brazing which is free from melt sticking and has high reliability, by forming coating layers of nitride, carbide or carbonitride in a specific thickness range on the surface of a copper alloy. CONSTITUTION:An electrode is made of a Cr-Cu alloy wherein pure Cu or >=5% additive element, for example, Cr is subjected to solid-solution treatment. Coating layers of nitride, carbide or carbonitride of 500Angstrom -10microns (more particularly 0.5-5microns) thickness are formed on the surface thereof. The nitride, carbide and carbonitride are the nitride, carbide and carbonitride of metals of group IVa such as Ti or Zr, group VA such as Mo or W and group VIa such as Nb or Ta. These coating layers are formed by vacuum deposition, PVD such as ion plating, or sputtering or plasma CVD.

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