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1. 发明专利

JPH03138820A MANUFACTURE OF OXIDE SUPERCONDUCTOR 失效
公开(公告)号：JPH03138820A
公开(公告)日：1991-06-13
申请号：JP20932589
申请日：1989-08-12
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： HIKATA TAKESHI , SATO KENICHI , MUKAI HIDETO , DAIMATSU KAZUYA , NAGATA MASAYUKI , TAKANO SATORU , HOSODA YOSHIHIRO , ICHIYANAGI HAJIME , KAWASHIMA MASANARI , SHIBUTA NOBUHIRO
IPC分类号： B21C1/00 , C01G1/00 , C01G29/00 , C04B35/45 , C04B35/64 , H01B12/04 , H01B13/00 , H01L39/24
摘要： PURPOSE:To obtain an oxide superconductor with high critical current density by applying the first plastic processing, the first heat treatment, the second plastic processing, and the second heat treatment to a raw material in sequence. CONSTITUTION:The first plastic processing is applied to a raw material, the first heat treatment is applied to the material applied with the first plastic processing, and the second plastic processing is applied to the material applied with the first heat treatment, and the second heat treatment is applied to the material applied with the second plastic processing in steps. When the second plastic processing is applied after the first heat treatment is applied, the orientation of the superconductive phases generated by the first heat treatment can be aligned. When the second heat treatment is applied, the bonding between the superconductive phases aligned with orientation can be increased. Thus, an oxide superconductor with high critical current density can be obtained.

2. 发明专利

JPS63256587A CERAMIC SUPERCONDUCTIVE MEMBER 失效
公开(公告)号：JPS63256587A
公开(公告)日：1988-10-24
申请号：JP9172287
申请日：1987-04-14
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： ICHIYANAGI HAJIME , SAWADA KAZUO , TAKANO SATORU , INASAWA SHINJI
IPC分类号： C04B41/87 , C01G1/00 , C04B35/00 , C04B35/45 , H01B12/04 , H01L39/24
摘要： PURPOSE:The title member capable of maintaining a high critical temp., having high reliability against the change of humidity and high adhesive property, comprising a material formed by coating a specified ceramic protective layer on the surface of a ceramic superconductive body having (pseudo)perovskite structure. CONSTITUTION:A ceramic protective layer 2 having high moisture resistance and high impermeability for air comprising at least one compd. among nitrides, oxides, borides, and carbides of at least one elements selected from the group IIIa, IIIb, IVa, and IVb of the periodic table is coated on the surface of a ceramic superconductor 1 having perovskite or pseudoperovskite structure having a compsn. expressed by the formula, wherein A is an element of the group Ia, IIa, or IIIa of the periodic table; B is at least one kind selected from the elements of the group Ib, IIb, and IIIb contg. at least Cu: C is at least one kind selected from O, C, N, F, and S, contg. pref. at least O; each a-c is compositional ratio of A-C.

3. 发明专利

JPS63239196A SUPERCONDUCTIVE MATERIAL 失效
公开(公告)号：JPS63239196A
公开(公告)日：1988-10-05
申请号：JP7542687
申请日：1987-03-27
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： ICHIYANAGI HAJIME , SAWADA KAZUO , NAKAI YOSHIHIRO
IPC分类号： C30B15/34 , C30B29/10 , C30B29/22 , H01B12/04 , H01L39/12
摘要： PURPOSE:To obtain a ceramic superconductive material comprising single crystal bodies of a ceramic material, conducting easily electric current and causing hardly breakage of the material such as disconnection even if a certain degree of strength of external force is applied thereto. CONSTITUTION:The constitution of the ceramic constituting the superconductive material of this invention is expressed, for example, by the formula: AaBbCc, wherein A is at least one kind of the elements of the group Ia, IIa, and IIIa of the periodic table; B is at least one kind of the elements of the group Ib, IIb, and IIIb; C is at least one kind among O, C, N, F, and S. Moreover, it is preferred that a, b, and c satisfy a relation: (a) X (mean valency of A) + (b) X (mean valency of B) = (c) X (mean valency of C). Since, in this invention, the material comprises single bodies of the ceramic superconductive materials as described above, the material is easily conductive for electric current having also flexibility different from other polycrystalline bodies comprising an aggregation of crystals having several kinds of bearings.

4. 发明专利

JPS61264347A ELECTROPHOTOGRAPHIC SENSITIVE BODY 失效
公开(公告)号：JPS61264347A
公开(公告)日：1986-11-22
申请号：JP10661185
申请日：1985-05-17
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： NAKAGAMA SHOJI , TANAKA SABURO , FUJITA NOBUHIKO , ICHIYANAGI HAJIME
IPC分类号： G03G5/08 , G03G5/082 , G03G5/14
摘要： PURPOSE:To prevent the curling of an electrophotographic sensitive body formed with a photoconductive layer consisting essentially of a-Si on one surface of a flexible substrate while maintaining the flexibility thereof by forming a specific curling preventive layer on the other surface of the substrate on the side opposite from the photoconductive layer. CONSTITUTION:The curling preventive layer consisting of a material having 2-22X10 kg/mm modulus of elasticity and 2-13X10 coefft. of thermal expansion and having 0.3-5mum thickness is formed on the other surface of the substrate on the side opposite from the photoconductive layer of the electrophotographic sensitive body formed with the photoconductive layer consisting essentially of amorphous silicon having 1-6mum thickness on one surface of the flexible substrate. The curling preventive layer 14 does not effectively act as the curling preventive layer 14 if the modulus of elasticity is kg/mm and the flexibility of the photosensitive body 10 is lost if the modulus of elasticity exceeds 22X10 kg/mm . The photosensitive body is curled by the thermal expansion if the coefft. of thermal expansion exceeds 13-10 and the adhesiveness to the substrate 11 is poor if said coefft. is . There is no effect of preventing curling if the thickness is

5. 发明专利

JPS61248056A ELECTROPHOTOGRAPHIC SENSITIVE BODY 失效
公开(公告)号：JPS61248056A
公开(公告)日：1986-11-05
申请号：JP8980285
申请日：1985-04-25
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： NAKAGAMA SHOJI , TANAKA SABURO , ISHII MASAYUKI , FUJITA NOBUHIKO , ICHIYANAGI HAJIME
IPC分类号： G03G5/08 , G03G5/082
摘要： PURPOSE:To improve the life of an electrophotographic sensitive body by using the intrinsic amorphous silicon and/or intrinsic amorphous silicon germanium contg. a slight amt. of a group IIIb element and group Vb element as a photoconductive layer of the photosensitive body. CONSTITUTION:This photosensitive body has the photoconductive layer consisting of the intrinsic amorphous silicon and/or intrinsic amorphous silicon germanium contg. =0.1ppm.

6. 发明专利

JPS61205659A MANUFACTURE OF POLYCRYSTAL ZINC SULFIDE 失效
公开(公告)号：JPS61205659A
公开(公告)日：1986-09-11
申请号：JP4885385
申请日：1985-03-11
申请人： JAPAN TECH RES & DEV INST , SUMITOMO ELECTRIC INDUSTRIES
发明人： SATO KAZUTAMI , KASHIWAI HIDEAKI , ICHIYANAGI HAJIME , SHIBATA KENICHIRO
IPC分类号： C04B35/547 , C01G9/08 , C04B35/00

7. 发明专利

JPS60254048A ELECTROPHOTOGRAPHIC SENSITIVE BODY AND ITS MANUFACTURE 失效
公开(公告)号：JPS60254048A
公开(公告)日：1985-12-14
申请号：JP11169784
申请日：1984-05-30
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： TANAKA SABUROU , FUJITA NOBUHIKO , ICHIYANAGI HAJIME
IPC分类号： G03G5/08 , G03G5/082 , G03G5/10
摘要： PURPOSE:To improve the durability and film layer distribution, to increase the reliability, and to simplify a driving mechanism for an optical system and a photosensitive body by forming a seamless film of amorphous silicon on an annular seamless flexible film substrate. CONSTITUTION:A polyimide film substrate 21 while moved by substrate driving rollers 7-5 and 7-6 is heated by a substrate heating heater 6 and a depositing chamber 2 is evacuated to 1X10 -10 Torr and held in this state; and then a pot 4 containing Ti is heated to form a Ti film 22. Then, valves 14-1-14-3 are fully opened and a gas flow control valve 19 controls the flow rate of gaseous SiH4 to 10SCCM, the flow rate of gaseous B2H6 diluted with hydrogen to 60 SCCM, and the flow rate of gaseous hydrogen to 100SCCM. A this time, the degree of vacuum in the depositing chamber 1 is adjusted to 0.1-1Torr. In this state, high frequency electric power is applied for 10min and the valves 14-2 and 14-3 are closed; and the flow rate of SiH4 is held at 150SCCM for 30min to obtain an a-Si film 24 with 10mum overall film thickness.

8. 发明专利

JPS60124877A STRAIN SENSOR 失效
公开(公告)号：JPS60124877A
公开(公告)日：1985-07-03
申请号：JP23249883
申请日：1983-12-08
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： KUME MASAHIRO , TAKADA KOUJI , FUJITA NOBUHIKO , DOI AKIRA , OOTSUKA AKIRA , ICHIYANAGI HAJIME
IPC分类号： G01B7/16 , G01L9/04 , H01L29/84
摘要： PURPOSE:To use the titled sensor repeatedly even under environment at an extremely high temperature or a cryogenic temperature by bringing the electric resistance of a path passing through a strain-receiving structure member to not less than fixed times as large as resistance between electrodes through a second region between the electrodes. CONSTITUTION:A first silicon resistance thin-film layer 18 constitutes a first region in a strain-receiving resistance thin-film layer 17 while a second silicon resistance thin-film layer 19 constitutes a second region. The electric resistance of a path passing through the layer 19, the layer 18, a member 14 to be detected as a strain-receiving structure member, the layer 18 and the layer 19 in succession is brought to not less than 10 times as large as electric resistance between electrodes 21a, 21b between the electrodes 21a, 21b. Accordingly, the strain- receiving resistance thin-film layer 17 is also strained similarly when strain is generated in the strain-receiving structure member 14 functioning as the object to be detected in combination, but the change of electric resistance based on strain in the layer 19 can be extracted accurately by lead wires 16a, 16b even when the member 14 to be detected has conductivity.

9. 发明专利

JPS6061761A PHOTOSENSITIVE BODY FOR ELECTROPHOTOGRAPHY 失效
公开(公告)号：JPS6061761A
公开(公告)日：1985-04-09
申请号：JP17182383
申请日：1983-09-16
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： FUJITA NOBUHIKO , ICHIYANAGI HAJIME
IPC分类号： G03G5/08 , G03G5/14
摘要： PURPOSE:To prevent deterioration in the properties on the surface of a photosensitive body owing to corona discharge in an electrifying stage and mecanical damage thereof in various stages by coating a diamond-like carbon film on the surface of a photosensitive active layer formed on a conductive base body. CONSTITUTION:An a-Si photosensitive active layer 2 is formed on an aluminum drum base body 1. The diamond-like carbon film 3 to be formed on the surface of said a-Si layer is a carbon film formed via a plasma state or ion state and is the film having the electrical, mechanical, optical and chemical properties approximate to the characteristics of diamond. The photosensitive body having such constitution withstands thoroughly 500,000 times of copying and still permits sharp copying.

10. 发明专利

JPS58141877A ELECTRODE FOR WELDING AND BRAZING 失效
公开(公告)号：JPS58141877A
公开(公告)日：1983-08-23
申请号：JP2669582
申请日：1982-02-19
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： IGARASHI TADASHI , DOI YOSHIHIKO , ICHIYANAGI HAJIME
IPC分类号： B23K11/30 , B23K35/02 , B23K35/14
摘要： PURPOSE:To obtain an electrode for welding and brazing which is free from melt sticking and has high reliability, by forming coating layers of nitride, carbide or carbonitride in a specific thickness range on the surface of a copper alloy. CONSTITUTION:An electrode is made of a Cr-Cu alloy wherein pure Cu or >=5% additive element, for example, Cr is subjected to solid-solution treatment. Coating layers of nitride, carbide or carbonitride of 500Angstrom -10microns (more particularly 0.5-5microns) thickness are formed on the surface thereof. The nitride, carbide and carbonitride are the nitride, carbide and carbonitride of metals of group IVa such as Ti or Zr, group VA such as Mo or W and group VIa such as Nb or Ta. These coating layers are formed by vacuum deposition, PVD such as ion plating, or sputtering or plasma CVD.

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