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11. 发明专利

JP2004018297A Aluminum nitride sintered compact having metallization layer and its manufacturing process 审中-公开
公开(公告)号：JP2004018297A
公开(公告)日：2004-01-22
申请号：JP2002173652
申请日：2002-06-14
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HIROSE YOSHIYUKI , CHIKUNO TAKASHI
IPC分类号： H05K1/09 , C04B35/581 , H05K3/12 , H05K3/40
摘要： PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact having a metallization layer which exerts high adhesion strength to the aluminum nitride and forms no crack, even when thickness of the metallization layer and size of via holes are increased. SOLUTION: In the aluminum nitride sintered compact having the metallization layer on the surface and/or inside, the metallization layer comprises W and an inorganic matter. Preferably, the average grain size of W is 2-5 μm, and the content of the inorganic matter is 1-30 wt.%. The inorganic matter effective for inhibiting cracks in the metallization layer is chosen from a material comprising a composition same as that of the sintered compact, aluminum nitride, silicon nitride, silicon carbide and yttrium oxide. COPYRIGHT: (C)2004,JPO

12. 发明专利

JP2004014597A Method for producing aluminum nitride sintered body having metaliized layer 审中-公开
公开(公告)号：JP2004014597A
公开(公告)日：2004-01-15
申请号：JP2002162548
申请日：2002-06-04
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HIROSE YOSHIYUKI , CHIKUNO TAKASHI
IPC分类号： H01L23/12
摘要： PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered body in which a junction strength is strong between aluminum nitride and a metallized layer, no cracks appear in the metallized layer and aluminum nitride, and which has the metallized layer at a low resistivity.
SOLUTION: A paste is coated on a ceramic screen sheet having the aluminum nitride as a principal component, and the paste contains a W powder and a WO
3 powder having a mean particle size 2 μm to 4 μm (preferably, 2.5 μm to 3.5 μm), as a conductive high melting metal, and is not mixed with the other inorganic powder. After the coating, the whole is sintered at the same time to form the metallized layer, or a through hole is perforated in the ceramic screen sheet, to fill up the paste inside the through hole, and thereafter the whole is sintered at the same time.
COPYRIGHT: (C)2004,JPO

13. 发明专利

JP2003342090A Aluminum nitride sintered compact having metallized layer and method for producing the same 审中-公开
标题翻译：具有金属层的氮化铝烧结压片及其制造方法
公开(公告)号：JP2003342090A
公开(公告)日：2003-12-03
申请号：JP2002154386
申请日：2002-05-28
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HIROSE YOSHIYUKI , CHIKUNO TAKASHI
IPC分类号： C04B35/581 , C04B35/64 , C04B41/88 , H01L23/13
摘要： PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact having a metallized layer, wherein the bonding force between the aluminum nitride and the metallized layer is high, and the metallized layer has no cracks. SOLUTION: The aluminum nitride sintered compact having the metallized layer is produced by applying a paste containing a conductive high-melting metal being a W powder with an average particle diameter of 2-5 μm (desirably 2.5-4 μm) and freed from an organic substance powder other than that to a ceramic green sheet based on aluminum nitride and simultaneously firing the entire. Alternatively, the aluminum nitride sintered compact having the metallized layer and containing W with an average particle diameter of 2-5.5 μm (desirably 2.5-4.5 μm) is produced by making a throughhole in the ceramic green sheet, filling the paste containing the conductive high-melting metal into the throughhole and simultaneously firing the entire. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供具有金属化层的氮化铝烧结体，其中氮化铝和金属化层之间的结合力高，并且金属化层没有裂纹。具有金属化层的氮化铝烧结体通过涂布含有平均粒径为2-5μm（优选为2.5〜4μm）的W粉末的导电性高熔点金属的糊料而制成，并且释放从除了氮化铝的陶瓷生片以外的有机物质粉末同时烧制。或者，具有金属化层并含有W的平均粒径为2-5.5μm（优选为2.5-4.5μm）的氮化铝烧结体通过在陶瓷生片中形成通孔来制造，填充含有导电性高的糊将金属熔化到通孔中，同时点燃整个金属。版权所有（C）2004，JPO

14. 发明专利

JP2003342089A Aluminum nitride sintered compact having metallized layer and method for producing the same 审中-公开
标题翻译：具有金属层的氮化铝烧结压片及其制造方法
公开(公告)号：JP2003342089A
公开(公告)日：2003-12-03
申请号：JP2002154385
申请日：2002-05-28
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HIROSE YOSHIYUKI , CHIKUNO TAKASHI
IPC分类号： C04B35/581 , C04B35/64 , C04B41/88 , H01L23/13 , H01L23/14
摘要： PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact having a metallized layer, wherein the bonding force between the aluminum nitride and the metallized layer is high, and the metallized layer has no cracks. SOLUTION: The aluminum nitride sintered compact having the metallized layer is produced by applying a paste containing a conductive high-melting metal being a W powder with an average particle diameter of 2-5 μm (desirably 2.5-4 μm) to a ceramic green sheet based on aluminum nitride and simultaneously firing the entire. Alternatively, the aluminum nitride sinter having the metallized layer and containing W with an average particle diameter of 2-5.5 μm (desirably 2.5-4.5 μm) is produced by making a throughhole in the ceramic green sheet, filling the paste containing the conductive high-melting metal into the throughhole and simultaneously firing the entire. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供具有金属化层的氮化铝烧结体，其中氮化铝和金属化层之间的结合力高，并且金属化层没有裂纹。解决方案：具有金属化层的氮化铝烧结体通过将含有平均粒径为2-5μm（优选2.5-4μm）的W粉末的导电性高熔点金属的膏体施加到基于氮化铝的陶瓷生片，同时烧制全部。或者，通过在陶瓷生片中形成通孔来制造具有金属化层并含有平均粒径为2-5.5μm（优选为2.5〜4.5μm）的W的氮化铝烧结体，填充含有导电性高分子将金属熔化成通孔，同时点燃整个。版权所有（C）2004，JPO

15. 发明专利

JP2012015229A Method of producing silicon carbide semiconductor device 审中-公开
标题翻译：生产碳化硅半导体器件的方法
公开(公告)号：JP2012015229A
公开(公告)日：2012-01-19
申请号：JP2010148530
申请日：2010-06-30
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： CHIKUNO TAKASHI , TAMASO HIDETO , SHIOMI HIROSHI
IPC分类号： H01L21/265 , C23C16/511 , C23C16/56
摘要： PROBLEM TO BE SOLVED: To provide a method of producing a silicon carbide semiconductor device in which there is no occurence of roughness over the entire surface of a silicon carbide wafer.SOLUTION: A method of producing a silicon carbide semiconductor device comprises a step of performing ion injection of an impurity 30i into a silicon carbide wafer 10, a step of forming a diamond layer 40 on the silicon carbide wafer 10 into which ion injection of the impurity 30i is performed and a step of performing a heat treatment to the silicon carbide wafer 10 on which the diamond layer 40 is formed so as to form an impurity region 30 in which the impurity 30i is activated in the silicon carbide wafer 10.
摘要翻译：要解决的问题：提供一种在碳化硅晶片的整个表面上不发生粗糙度的碳化硅半导体器件的制造方法。解决方案：制造碳化硅半导体器件的方法包括：将杂质30i离子注入到碳化硅晶片10中的步骤，在碳化硅晶片10上形成金刚石层40的步骤，其中离子注入执行杂质30i的步骤和对其上形成有金刚石层40的碳化硅晶片10进行热处理以形成其中在碳化硅晶片10中激活杂质30i的杂质区30的步骤。版权所有（C）2012，JPO＆INPIT

16. 发明专利

JP2011023451A SiC STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SiC STRUCTURE 有权
标题翻译： SiC结构，半导体器件和制造SiC结构的方法
公开(公告)号：JP2011023451A
公开(公告)日：2011-02-03
申请号：JP2009165463
申请日：2009-07-14
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： CHIKUNO TAKASHI
IPC分类号： H01L23/40 , H01L23/373
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide an SiC structure maintaining a state where a member is firmly joined even if it has been subjected to a plurality of heat cycles, and also to provide a semiconductor device and a method for manufacturing the SiC structure. SOLUTION: The SiC structure 10 is equipped with: a heat dissipating component 1 for dissipating heat of an object while comprising SiC; a base 3 comprising SiC; and a junction 7 for joining the heat dissipating component 1 and the base 3 while containing SiC and C. In the junction 7, a concentration of C decreases toward the center of the junction 7 from a junction surface joined to the heat dissipating component 1 or the base 3 relative to a direction intersecting with the junction surface. A composition of the junction 7 is preferably represented by Si 1-x C x (0 COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种保持部件被牢固接合的状态的SiC结构，即使已经进行了多次热循环，并且还提供了一种半导体器件和用于制造SiC结构的方法。解决方案：SiC结构10配备有：用于散发物体的热量的散热部件1，同时包括SiC; 包含SiC的基体3; 以及用于在包含SiC和C的同时接合散热部件1和基座3的接合部7.在接合部7中，C的浓度从接合到散热部件1的接合面朝向接合部7的中心减小，基部3相对于与连接表面相交的方向。接合点7的组成优选地由Si（SB）1-x x （0

17. 发明专利

JP2010148229A Half-bridge inverter and three phase bridge inverter 审中-公开
标题翻译：半桥逆变器和三相桥变频器
公开(公告)号：JP2010148229A
公开(公告)日：2010-07-01
申请号：JP2008322344
申请日：2008-12-18
申请人： Nissin Electric Co Ltd , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 日新電機株式会社
发明人： CHIKUNO TAKASHI , SAWADA KENICHI , SHINKAI JIRO , MATSUKAWA MITSURU , MINOWA YOSHIBUMI , NAGASE TADAO
IPC分类号： H02M7/48
摘要： PROBLEM TO BE SOLVED: To provide a half bridge inverter and a three phase bridge inverter, which are smaller, can achieve high density mounting, reduce noise generated due to inverter switching and has high resistance to noise without rise of cost. SOLUTION: A first FET device where terminal array on a surface is in an order of a gate, a drain and a source from one side and a radiation face at a backside is not insulated from the drain, and a second FET device where terminal array of the surface is in the order of the drain, the source and the gate from a side corresponding to a gate position in the first FET device and the radiation face at the backside is not insulated from the source are combined. The drain of the first FET device is connected to a positive electrode-side electric wire, the source of the second FET device to a negative electrode-side electric wire and potential of respective cooling fins is fixed in the half bridge inverter and the three phase bridge inverter. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供更小的半桥逆变器和三相桥式逆变器，可以实现高密度安装，减少由于逆变器开关而产生的噪声，并且在不增加成本的情况下具有高抗噪声性。解决方案：第一FET器件，其中表面上的端子阵列是从栅极，漏极和来自一侧的源极以及背面的辐射面的顺序不与漏极绝缘，并且第二FET器件其中表面的端子阵列是排列的顺序，源极和栅极从对应于第一FET器件中的栅极位置的一侧和背面的辐射面不与源绝缘组合。第一FET器件的漏极连接到正电极侧电线，第二FET器件的源极连接到负极侧电线，并且各个散热片的电位固定在半桥逆变器中，并且三相桥式逆变器。版权所有（C）2010，JPO＆INPIT

18. 发明专利

JP2009259963A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2009259963A
公开(公告)日：2009-11-05
申请号：JP2008105808
申请日：2008-04-15
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： CHIKUNO TAKASHI , SAWADA KENICHI
IPC分类号： H01L21/8232 , H01L21/28 , H01L21/337 , H01L27/06 , H01L29/417 , H01L29/47 , H01L29/808 , H01L29/872
摘要： PROBLEM TO BE SOLVED: To provide a compact semiconductor device low in manufacture cost.
SOLUTION: The semiconductor device 1 is provided with a substrate 5, a JFET, a back electrode 28 and a rectifier element structure (SBD formed in a bonding part of a back contact electrode 27 and an n-type layer 12). The JFET is formed on a surface side of the substrate 5 and causes currents to flow in a direction along a surface of the substrate 5 between source/drain regions 9 and 10. The JFET comprises a source electrode 2 or a drain electrode 4 connected to the source/drain region 9 or 10. The back electrode 28 is formed on a back-side on an opposite side of the surface of the substrate 5. SBD is formed between the source electrode 2 or the drain electrode 4 and the back electrode 28.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供制造成本低的紧凑型半导体器件。解决方案：半导体器件1设置有衬底5，JFET，背电极28和整流元件结构（形成在背接触电极27和n型层12的接合部分中的SBD）。 JFET形成在基板5的表面侧，并使电流沿着源极/漏极区9和10之间的衬底5的表面的方向流动.JFET包括源电极2或漏电极4，源极/漏极区9或10.背面电极28形成在衬底5的表面的相对侧的背面上.SBSD形成在源电极2或漏电极4与背电极28之间。版权所有（C）2010，JPO＆INPIT

19. 发明专利

JP2008166584A Semiconductor device and manufacturing method therefor 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2008166584A
公开(公告)日：2008-07-17
申请号：JP2006355797
申请日：2006-12-28
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： CHIKUNO TAKASHI
IPC分类号： H01L21/331 , H01L21/205 , H01L29/737
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that stably operates at high temperatures, and to provide a manufacturing method therefor.
SOLUTION: A transistor 1, the semiconductor device, comprises: an n
+ -SiC layer 40 composed of a silicon carbide; and a p
- -diamond layer 50 composed of diamond that is formed on the n
+ -SiC layer 40 to constitute a heterojunction between the p
- -diamond layer 50 and the n
+ -SiC layer. The p
- -diamond layer 50 is formed with openings 99 for removing a region where the nucleus of the diamond that constitutes the p
- -diamond layer 50 is generated.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种在高温下稳定工作的半导体器件，并提供其制造方法。解决方案：晶体管1，半导体器件包括：由碳化硅组成的n + SP> -SiC层40; 和由形成在n + -SiC层40上的金刚石构成的p - - 二金刚石层50，以构成p -SiC层40之间的异质结。 - 金刚石层50和n + / SP> -SiC层。形成p - / - 二 - 金刚石层50的开口99用于去除其中产生构成金刚石层50的金刚石的核的区域。版权所有（C）2008，JPO＆INPIT

20. 发明专利

JP2004200347A Light emitting diode with high heat dissipation capability 审中-公开
标题翻译：具有高散热能力的发光二极管
公开(公告)号：JP2004200347A
公开(公告)日：2004-07-15
申请号：JP2002366166
申请日：2002-12-18
申请人： Allied Material Corp , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 株式会社アライドマテリアル
发明人： KAWAI CHIHIRO , CHIKUNO TAKASHI , NISHIDA SHINYA
IPC分类号： H01L23/373 , H01L33/32 , H01L33/64 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a heat sink with high thermal conductivity useful for semiconductor devices or the like and to provide its manufacturing method.
SOLUTION: The light emitting diode is a laminate structure which comprises a diamond-metal system heat sink, a p-type electrode, an AlN-GaN system semiconductor layer, an n-type electrode. The heat sink is a device where diamond particles, on the surface of each of which particles there is formed a reaction layer taking as a chief ingredient a carbide of a metal A consisting of one kind or more selected from IVa group elements, are dispersed in a metal B consisting of one kind or more selected from Ag, Cu, Au, Al, and Mg. The diamond occupies 35 to 80 vol % of the whole of the heat sink, and the average particle diameter of the diamond is ≥10 μm and less than 60 μm. Consequently, the thermal conductivity of the heat sink at room temperature can be made ≥300 W/mK.
COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于半导体器件等的具有高导热性的散热器，并提供其制造方法。解决方案：发光二极管是包括金刚石 - 金属系统散热器，p型电极，AlN-GaN系半导体层，n型电极的层压结构。散热器是其中每个颗粒的表面上的金刚石颗粒形成反应层的装置，其中以反应层为主要成分，由选自IVa族元素的一种或多种组成的金属A的碳化物分散在由选自Ag，Cu，Au，Al和Mg中的一种以上组成的金属B。金刚石占整个散热器的35〜80体积％，金刚石的平均粒径≥10微米，小于60微米。因此，室温下的散热器的热导率可以达到≥300W/ mK。版权所有（C）2004，JPO＆NCIPI

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