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1. 发明专利

JP2013110680A Switching circuit and envelope signal amplifier 有权
标题翻译：切换电路和信号放大器
公开(公告)号：JP2013110680A
公开(公告)日：2013-06-06
申请号：JP2011256130
申请日：2011-11-24
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , Toyohashi Univ Of Technology , 国立大学法人豊橋技術科学大学
发明人： HATSUKAWA SATOSHI , FUJIKAWA KAZUHIRO , CHIKUNO TAKASHI , SHIGA NOBUO , OHIRA TAKASHI , WADA KAZUYUKI , WUREN TUYA , TANIMURA KOTARO
IPC分类号： H03F1/02 , H03F3/217
CPC分类号： H03K17/687 , H02M1/08 , H02M3/158 , H03F1/0211 , H03F1/0222 , H03F3/16 , H03F3/217 , H03F3/45 , H03F3/55 , H03F3/607 , H03F2200/102 , H03F2200/351 , Y10T307/747
摘要： PROBLEM TO BE SOLVED: To provide a switching circuit that combines PWM signals amplified through a plurality of switching elements with a low loss to demodulate a modulated signal, and an envelope signal amplifier having the switching circuit.SOLUTION: A switching circuit 33 of an embodiment includes: a connection circuit cascade-connecting control terminals for controlling switching of N (N is an integer of two or greater) respective transistors M1-Mn via N-1 coils L1; and coils L3 connected between an end of a coil L2 having the other end electrically connected to a DC power supply and corresponding ends of the transistors M1-Mn, respectively. The switching elements M1-Mn are sequentially switched according to a PWM signal input into an input terminal of the connection circuit. The switching circuit 33 further includes a transistor M0 inserted on the one end or other end side of the coil L2 in cascade connection.
摘要翻译：要解决的问题：提供一种将通过多个开关元件放大的PWM信号与低损耗组合以解调调制信号的开关电路，以及具有开关电路的包络信号放大器。解决方案：实施例的开关电路33包括：连接电路，用于通过N-1线圈L1控制各个晶体管M1-Mn的N（N为2或更大的整数）的开关级联连接控制端子; 以及连接在具有与DC电源电连接的另一端的线圈L2的端部与晶体管M1-Mn的对应端之间的线圈L3。开关元件M1-Mn根据输入到连接电路的输入端的PWM信号依次切换。开关电路33还包括级联地插入线圈L2的一端或另一端侧的晶体管M0。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2007261883A n-TYPE ALN CRYSTAL AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译： n型ALN晶体及其制造方法
公开(公告)号：JP2007261883A
公开(公告)日：2007-10-11
申请号：JP2006089897
申请日：2006-03-29
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： TAKEUCHI HISAO , CHIKUNO TAKASHI , MIYANAGA TOMOMASA
IPC分类号： C30B29/38 , C01B21/072 , H01L21/203 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To obtain a low-resistance n-type AlN semiconductor crystal with improved productivity and carrier concentration, and to obtain a short wavelength light emitting element and a power device.
SOLUTION: A low-resistance n-type AlN crystal is obtained by substituting a part of Al atoms in an AlN crystal with group IIIa elements (such as Sc, Y and La) or/and group IIIb elements (such as B, Ga and In), and substituting one adjoining nitrogen (N) atom with an oxygen (O) atom to form a shallow impurity level. In particular, the total concentration (C
3A ) of the group IIIa elements and/or group IIIb elements is preferably 1×10
18 cm
-3 or more, and the O concentration (Co) is preferably in a range of 0.01C
3A 3A . Well-known methods such as CVD, MBE and sublimation methods can be employed as a method for manufacturing the AlN crystal.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：获得具有提高的生产率和载流子浓度的低电阻n型AlN半导体晶体，并获得短波长发光元件和功率器件。解决方案：通过用IIIa族元素（例如Sc，Y和La）或/和IIIb族元素（例如B）代替AlN晶体中的一部分Al原子，获得低电阻n型AlN晶体，Ga和In），并且用氧（O）原子代替一个相邻的氮（N）原子以形成浅杂质水平。特别地，IIIa族元素和/或IIIb族元素的总浓度（C 3A ）优选为1×10 -3 SP / >以上，并且O浓度（Co）优选在0.01℃<3A> 的范围内。作为制造AlN晶体的方法，可以采用CVD，MBE，升华法等众所周知的方法。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2004238264A Ceramic sintered compact having metallized layer and its manufacturing process 审中-公开
公开(公告)号：JP2004238264A
公开(公告)日：2004-08-26
申请号：JP2003030566
申请日：2003-02-07
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HIROSE YOSHIYUKI , CHIKUNO TAKASHI
IPC分类号： C04B41/88 , H01L23/12
摘要： PROBLEM TO BE SOLVED: To provide a ceramic sintered compact having a metallized layer that does not generate cracks on a via or a via periphery of ceramics in a ceramic substrate having a via part formed thereon, and to provide a process for manufacturing the same.
SOLUTION: The method for manufacturing the ceramic sintered compact comprises perforating a throughhole in a ceramic green sheet using a ceramic powder as a main component, charging a paste containing a metal powder and a solvent into the inside of the throughhole, and then sintering the whole simultaneously. In charging the throughhole with the paste, the method is characterized by placing a paste transfer prevention sheet on the opposite face to the face on which the paste charging of the green sheet is conducted and then conducting the paste charging wherein the water absorption of the paste transfer prevention sheet is 1% or less. The ceramic sintered compact having a metallized layer whose surface is ground or polished is also provided.
COPYRIGHT: (C)2004,JPO&NCIPI

4. 发明专利

JP2004237642A Ceramic sintered compact with metallized layer and its manufacturing method 审中-公开
标题翻译：陶瓷烧结与金属层及其制造方法
公开(公告)号：JP2004237642A
公开(公告)日：2004-08-26
申请号：JP2003030565
申请日：2003-02-07
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HIROSE YOSHIYUKI , CHIKUNO TAKASHI
IPC分类号： B28B11/00 , H05K3/26 , H05K3/40
摘要： PROBLEM TO BE SOLVED: To provide a ceramic sintered compact which is free from the generation of cracks in a via part or the ceramics around the via part in a ceramic substrate with the via part formed thereon, and a method for manufacturing this ceramic compact. SOLUTION: This method manufactures the ceramic sintered compact with a metallized layer by perforating a through hole in a ceramic green sheet composed mainly of a ceramic powder and simultaneously sintering the whole paste containing a metal powder and a solvent after filling the interior of the through hole with the paste. In this method, the ceramic sintered compact with a metallized layer is obtained by charging the paste into a process to dry the solvent of the paste within 20 minutes of the packing of the paste. The ceramic sintered compact is finished by grinding or polishing a manufactured sintered compact. COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：提供一种陶瓷烧结体，其在其上形成有通孔部分的陶瓷基板中的通孔部分或通孔部分周围的陶瓷中不产生裂纹，以及制造该陶瓷烧结体的方法陶瓷结构。解决方案：该方法通过在主要由陶瓷粉末组成的陶瓷生坯片中穿孔，同时在填充内部含有金属粉末和溶剂的整个糊料之后，对具有金属化层的陶瓷烧结体制造通孔用糊。在该方法中，具有金属化层的陶瓷烧结体通过将糊状物填充到糊料包装后20分钟内干燥糊剂的溶剂的工序而得到。通过研磨或研磨制造的烧结体来完成陶瓷烧结体。版权所有（C）2004，JPO＆NCIPI

5. 发明专利

JP2004200346A Package for accommodating semiconductor device, its manufacturing method, and semiconductor apparatus 审中-公开
公开(公告)号：JP2004200346A
公开(公告)日：2004-07-15
申请号：JP2002366165
申请日：2002-12-18
申请人： Allied Material Corp , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 株式会社アライドマテリアル
发明人： SAITO HIROHISA , CHIKUNO TAKASHI , KAWAI CHIHIRO , NISHIDA SHINYA , TANAKA KIYOSHI
IPC分类号： H01L23/12 , H01L21/60 , H01L23/02 , H01L23/14 , H01L23/373 , H01L23/66
CPC分类号： H01L23/66 , H01L23/3732 , H01L24/28 , H01L24/45 , H01L24/83 , H01L2224/29111 , H01L2224/45014 , H01L2224/45124 , H01L2224/45144 , H01L2224/8319 , H01L2224/83801 , H01L2924/00014 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/12041 , H01L2924/1306 , H01L2924/14 , H01L2924/1423 , H01L2924/15787 , H01L2924/181 , H01L2924/19043 , H01L2924/351 , H01L2924/01022 , H01L2924/01029 , H01L2924/01047 , H01L2924/01026 , H01L2924/01028 , H01L2924/01027 , H01L2924/01074 , H01L2924/01032 , H01L2924/01079 , H01L2924/0105 , H01L2924/3512 , H01L2924/00 , H01L2224/48
摘要： PROBLEM TO BE SOLVED: To provide an economic package for accommodating semiconductor device in which a semiconductor device is normally and stably operated for a long period of time by effectively transmitting heat produced in the actuation of the semiconductor device to a package mounting substrate. SOLUTION: The package for accommodating a semiconductor device is provided with a substantially square substrate which includes a mounting part on an upper surface of which the semiconductor device is mounted and screw attachment parts each consisting of a through-hole or a cutout at opposing sides, a frame provided on the upper surface of the substrate to surround the foregoing mounting part and including an input/output terminal attachment part on a side or upper part thereof, and an input/output terminal joined with the foregoing attachment part. It is characterized in that the substrate is adapted such that at least a part of a lower portion of the semiconductor element mounting part comprises a metal diamond complex where metal taking copper and/or silver as a chief ingredient is impregnated in a host material with which diamond particles are joined via a metal carbide, and further, another part including the screw attachment part comprises metal. COPYRIGHT: (C)2004,JPO&NCIPI

6. 发明专利

JP2004200338A Manufacturing method of ceramic multilayer laminate 审中-公开
公开(公告)号：JP2004200338A
公开(公告)日：2004-07-15
申请号：JP2002366115
申请日：2002-12-18
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HIROSE YOSHIYUKI , CHIKUNO TAKASHI
IPC分类号： B28B11/00 , H05K3/46
摘要： PROBLEM TO BE SOLVED: To provide a ceramic multilayer laminate capable of inexpensively forming a counterboring part having good dimensional accuracy and an excellent surface state. SOLUTION: The ceramic multilayer laminate is formed by superimposing a second ceramic green sheet having an opening on a first ceramic green sheet, placing an elastic body having the same shape as that of the opening on the opening in the green sheet, then laminating the superimposed green sheet and elastic body by heating and pressing them using a press machine, and further calcining them. Silicone rubber or fluorine rubber having rubber hardness of 20 to 90 Hs is preferably used as the elastic body. COPYRIGHT: (C)2004,JPO&NCIPI

7. 发明专利

JP2012120278A Switching power supply 有权
标题翻译：切换电源
公开(公告)号：JP2012120278A
公开(公告)日：2012-06-21
申请号：JP2010265959
申请日：2010-11-30
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： CHIKUNO TAKASHI
IPC分类号： H02M3/155
CPC分类号： H02M1/08 , H02M3/1588 , H02M7/5387 , H03K17/663 , H03K2217/0045 , Y02B70/1466
摘要： PROBLEM TO BE SOLVED: To solve the problem that high-speed driving of a switching power supply has limitation due to delay of a photocoupler.SOLUTION: In the switching power supply which includes a first transistor and a second transistor, the first transistor is connected to a positive electrode of a DC voltage generating source and the second transistor is connected to between the first transistor and a negative electrode of the DC voltage generating source, the first transistor and the second transistor are alternately conducted, a gate signal is applied to a gate terminal of the first transistor by using a voltage of the terminal of the first transistor connected to the positive electrode as a reference, a gate signal is applied to a gate terminal of the second transistor by using a voltage of the terminal of the second transistor connected to the negative electrode as a reference, and the first transistor and the second transistor include a wideband gap semiconductor formed of different materials.
摘要翻译：要解决的问题：为了解决由于光电耦合器的延迟而导致的开关电源的高速驱动的限制的问题。解决方案：在包括第一晶体管和第二晶体管的开关电源中，第一晶体管连接到直流电压产生源的正极，第二晶体管连接到第一晶体管和负极之间直流电压产生源，第一晶体管和第二晶体管交替导通，栅极信号通过使用连接到正极的第一晶体管的端子的电压作为参考而施加到第一晶体管的栅极端子通过使用连接到负极的第二晶体管的端子的电压作为参考，将栅极信号施加到第二晶体管的栅极端子，并且第一晶体管和第二晶体管包括由不同的形成的宽带隙半导体材料。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2006303131A Diamond semiconductor and manufacturing method thereof 有权
标题翻译：金刚石半导体及其制造方法
公开(公告)号：JP2006303131A
公开(公告)日：2006-11-02
申请号：JP2005121854
申请日：2005-04-20
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： CHIKUNO TAKASHI , NISHIBAYASHI YOSHIKI
IPC分类号： H01L21/205 , C30B29/04
摘要： PROBLEM TO BE SOLVED: To provide an economical manufacturing method of a diamond semiconductor for growing a p-doped n-type diamond on a {100} substrate.
SOLUTION: After a diamond film whose thickness is ≥0.1 μm is grown on a diamond substrate under the nitrogen addition condition of a nitrogen concentration/carbon concentration of ≥0.1% and ≤5.0%, diamond growth is carried out under the phosphorus addition condition. The diamond semiconductor obtained by this method is also provided.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种用于在ä100}衬底上生长p掺杂的n型金刚石的金刚石半导体的经济制造方法。
解决方案：在氮浓度/碳浓度≥0.1％和≤5.0％的氮气添加条件下，在金刚石基底上生长厚度≥0.1μm的金刚石膜，在磷下进行金刚石生长添加条件。还提供了通过该方法获得的金刚石半导体。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2004241682A Ceramic sintered compact having metallized layer and method for manufacturing the same 审中-公开
公开(公告)号：JP2004241682A
公开(公告)日：2004-08-26
申请号：JP2003030564
申请日：2003-02-07
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HIROSE YOSHIYUKI , CHIKUNO TAKASHI
IPC分类号： H05K3/40 , H01L23/12
摘要： PROBLEM TO BE SOLVED: To prevent improper conduction between upper and lower layers occurred when high functional ceramic is used for the board of a multilayer structure or a package, and also to prevent cracking of a via hole, cracking or recession of the surface of the via hole.
SOLUTION: In a method for manufacturing a ceramic sintered compact having a metallized layer, a through-hole is made in a ceramic green sheet, a paste containing metallic powder is filled into the interior of the through-hole, and then the entire sheet is simultaneously sintered. In the method for manufacturing the ceramic sintered compact, the paste filling is carried out from one side of the green sheet, and then another paste lower in viscosity than the first-mentioned paste is used to again perform the paste filling from the opposite side of the sheet. The ceramic sintered compact is obtained by grinding or polishing the surface of the ceramic sintered compact thus formed.
COPYRIGHT: (C)2004,JPO&NCIPI

10. 发明专利

JP2004043222A Aluminum nitride compound sintered compact, ceramic substrate, semiconductor device and method for manufacturing sintered body 审中-公开
公开(公告)号：JP2004043222A
公开(公告)日：2004-02-12
申请号：JP2002200942
申请日：2002-07-10
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HIROSE YOSHIYUKI , CHIKUNO TAKASHI
IPC分类号： C04B35/584 , H01B3/12 , H01L23/13 , H01L23/15 , H05K1/03
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an aluminum nitride compound sintered compact having high thermal conductivity and a high thermal expansion coefficient and to provide a method for manufacturing the sintered compact. SOLUTION: The sintered compact is the compound sintered compact mainly consisting of aluminum nitride, can be obtained by sintering aluminum nitride and a sintering aid of the aluminum nitride. The sintered compact is manufactured in such a manner that the sintering aid is added by 10pts.wt. or more expressed in terms of oxide when the sum of the values expressing the addition amount of aluminum nitride and the addition amount of the sintering aid in terms of the oxide is made to be 100pts.wt., the thermal expansion coefficient at room temperature of the compound sintered compact is 5.5×10 -6 /K or more and the thermal conductivity at room temperature is 80W/mK or more. COPYRIGHT: (C)2004,JPO

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