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11. 发明专利

JPH08330396A EQUIPMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROCESSING OF SEMICONDUCTOR WAFER 失效
公开(公告)号：JPH08330396A
公开(公告)日：1996-12-13
申请号：JP13658495
申请日：1995-06-02
申请人： MITSUBISHI ELECTRIC CORP
发明人： SATO TETSUO , YASUDA TORU , IIDA SATOSHI , YONEKURA KAZUMASA , FUJIWARA NOBUO
IPC分类号： B23Q3/15 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
摘要： PURPOSE: To reduce the generation of dust and suppress the nonuniformity of the processing of a wafer. CONSTITUTION: Above a wafer stage 1 for putting a semiconductor wafer 2 on it, a coil 3 is provided for an AC current to be fed there from an AC power supply 4. In the coil 3, an AC magnetic field is generated by the flowing of the AC current. This AC magnetic field induces anti-magnetic currents flowing eddy-wise along the principal surface of the semiconductor wafer 2. By the repulsive forces acting between this anti-magnetic currents and the AC magnetic field, the semiconductor wafer 2 is pressed against the wafer stage 1 in an noncontacting way. Therefore, since the pressing of the semiconductor wafer is performed in a noncontacting way, no dust is generated. Also, since the processing of the processed surface of the semiconductor wafer 2 is not disturbed because of its noncontacting pressing, the processing is performed uniformly.

12. 发明专利

JPH06151383A METHOD OF ETCHING HIGH-PERMITTIVITY MULTICOMPONENT OXIDE FILM AND REFRACTORY METAL FILM, MANUFACTURE OF THIN-FILM CAPACITOR, AND PLASMA APPARATUS FOR FILM FORMATION 失效
公开(公告)号：JPH06151383A
公开(公告)日：1994-05-31
申请号：JP30270392
申请日：1992-11-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： HANAZAKI MINORU , KUSUMI YOSHIHIRO , NANBA TAKANORI , FUJIWARA NOBUO , OKUDAIRA TOMOHITO , ITO HIROMI
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108
摘要： PURPOSE:To obtain an etching method in which a high-permittivity multicomponent oxide film and refractory metal or metal compound, having a high selectivity relative to a mask can be processed by etching the multicomponent oxide film using, as an etching gas, an organic gas which produces a volatile organic metal. CONSTITUTION:Methane (CH4) that is a hydrocarbon gas is supplied to the inside of a processing chamber 5 at a rate of 500cc per minute at a gas pressure of 3mTorr. A high frequency of 13.56MHz is applied from a high frequency power source 10 at 1000W, and a magnetic field having 200G is generated by causing a current to flow through a coil 11, whereby the combination of the high frequency and the magnetic field induces a magnetron discharge to produce plasma. A PbLaZrTiO3 film 3 of the multicomponent oxide film having a high dielectric constant is etched by the plasma. At this time, the temperature of electrodes is controlled to a constant temperature, and the temperature of a wafer is 150 deg.C immediately after the completion of the etching.

13. 发明专利

JPH0628230B2 失效
公开(公告)号：JPH0628230B2
公开(公告)日：1994-04-13
申请号：JP6625487
申请日：1987-03-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIOKA NOBUYUKI , FUJIWARA NOBUO , WATAKABE YAICHIRO
IPC分类号： C23C14/14 , C23C14/06 , C23C14/34 , G03F1/22 , H01L21/027 , H01L21/30 , G03F1/16

14. 发明专利

JPH04199512A FORMATION OF PATTERN ALUMINUM ALLOY FILM 失效
公开(公告)号：JPH04199512A
公开(公告)日：1992-07-20
申请号：JP33543890
申请日：1990-11-28
申请人： APPLIED MATERIALS JAPAN , MITSUBISHI ELECTRIC CORP
发明人： FUKUYAMA TOSHIHIKO , SAWAI HISAHARU , FUJIWARA NOBUO
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/3213
摘要： PURPOSE:To improve etching selectivity between a photoresist mask and an aluminum alloy film by performing plasma etching under coexistence of chlorine gas and gas containing bromine compound. CONSTITUTION:An aluminum.silicon.copper allay film is formed on a base substrate surface by means of sputtering for example, and normal photolithographic process is taken to form a pattern by a photo resist mask being photosensitive resin to provide a product to be processed. Mixture gas of compound gas containing chlorine and bromine and in addition compound gas containing fluorine is used in plasma etching of the aluminum alloy film formed on the surface of the base of the product to be processed. Thus etching is possible with good selectivity with the photo resist mask and etching with good accuracy at a pattern step part as well as fast etching without residual is possible.

15. 发明专利

JPH03232224A PLASMA PROCESSOR 失效
公开(公告)号：JPH03232224A
公开(公告)日：1991-10-16
申请号：JP2931190
申请日：1990-02-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： NISHIOKA KYUSAKU , SHIBANO TERUO , FUJIWARA NOBUO
IPC分类号： C23F4/00 , H01L21/205 , H01L21/302
摘要： PURPOSE:To confine any charge particles contained in discharged plasma in a magnetic field for effectively avoiding the arrival of the charged particles at a wafer thereby enabling the plasma gas in high density to be produced for accelerating the processing rate by installing a local magnetic field impression means between a plasma producer and a processing chamber. CONSTITUTION:Any discharged plasma 3 is confined in a magnetic field generated by a magnetic field impression mechanism 9 installed on the peripheral part of a discharge tube 4. Accordingly, especially the charged particles such as ions, etc., contained in the discharged plasma 3 are effectively confined in the magnetic field so that specified particles such as radicals or neutral particles, etc., may selectively reach a wafer 6 to be processed. In such a constitution, it is recommended that said magnetic field impression mechanism 9 is installed as close as possible to the plasma producer, that is, as high as possible from the discharge tube 4 so that the effect of confining the plasma gas is enhanced thus enabling the plasma gas in high density to be produced.

16. 发明专利

JPH02140914A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH02140914A
公开(公告)日：1990-05-30
申请号：JP29498888
申请日：1988-11-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： YONEDA MASAHIRO , FUJIWARA NOBUO
IPC分类号： G03F1/22 , G03F1/54 , G03F7/20 , H01L21/027
摘要： PURPOSE:To obtain a method for manufacturing a semiconductor device for flattening steps located on the surface of a photoresist by changing the transmission rate of X rays according to the thickness of a mask material. CONSTITUTION:A mask 10 consists of a mask substrate 1 and mask materials 2a, 2b, and 2c. When X rays are directed onto the mask 10, they cannot pass through the thick mask material 2a, a small amount of X rays passes through the medium-thick mask material 2b and a large amount of X rays pass through the thin mask 2c. Also, nearly all X rays can pass through an area without any mask materials, thus allowing a photoresist to be strongly sensitized. Thus, by changing the thickness of the mask materials 2a, 2b, and 2c, the amount of X rays projected to a photoresist 5 can be changed and the amount to be eliminated is changed according to the difference of sensitization. As a result a photoresist film pattern 6 with a flat surface can be obtained as a photoresist after development treatment.

17. 发明专利

JPH0216731A PLASMA REACTOR 失效
公开(公告)号：JPH0216731A
公开(公告)日：1990-01-19
申请号：JP16581288
申请日：1988-07-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHIDA TOMOAKI , FUJIWARA NOBUO , NISHIOKA KYUSAKU , AKAZAWA MORIAKI , SHIBANO TERUO , KAWAI KENJI
IPC分类号： H01L21/302 , H01J37/32 , H01L21/205 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To make the density of plasma formation almost uniform by introducing microwaves having frequencies 100MHz-2GHz into a plasma generating chamber and making a reaction gas in the chamber cause electron cyclotron resonance. CONSTITUTION:While introducing a reaction gas into a plasma reaction chamber 1 and a plasma generating chamber 2, a part of the gas is discharged from a discharge port and a gas pressure is maintained at a prescribed value. Further, microwaves having frequencies 100MHz-2GHz in a high frequency source 3 are introduced into the plasma generating chamber 2 through a high frequency transmission path 4. Electrons of the reaction gas in the plasma generating chamber 2 are accelerated by electron cyclotron resonance and then, a high density gas plasma is generated in the plasma generating chamber 2. Then the gas plasma is moved from the plasma generating chamber 2 to the reaction chamber 1 along lines of magnetic force which are formed in magnetic coils 5 and performs treatment processes of thin film formation and etching and the like on the surface of a semiconductor substrate 9 located on a holder 8.

18. 发明专利

JPS63232425A FORMATION OF MASK ABSORBER FILM FOR X-RAY EXPOSURE 失效
公开(公告)号：JPS63232425A
公开(公告)日：1988-09-28
申请号：JP6625487
申请日：1987-03-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIOKA NOBUYUKI , FUJIWARA NOBUO , WATAKABE YAICHIRO
IPC分类号： C23C14/14 , C23C14/06 , C23C14/34 , G03F1/22 , H01L21/027 , H01L21/30
摘要： PURPOSE:To obtain an X-ray absorber pattern film having low internal stress by a Ti-W alloy film with excellent reproducibility by shaping the Ti-W alloy film through a sputtering film formation method using a reactive gas, in which nitrogen gas is added to argon gas, and mixing nitrogen into the Ti-W alloy film. CONSTITUTION:An X-ray absorber pattern film material employing a Ti-W alloy containing Ti is sputtered by a reactive gas, to which Ar gas and N2 gas are added, thus forming a film. The quantity of nitrogen gas mixed into argon gas is kept within a range of 30%-50% at that time. That is, when a Ti-W alloy film is shaped onto a mask substrate through a sputtering film formation method, N2 is mixed into the Ti-W alloy film by using the reactive gas in which N2 gas is added to Ar gas, thus forming an X-ray absorber pattern film by the Ti-W alloy film having an excellent absorption coefficient and low internal stress with superior reproducibility.

19. 发明专利

JPS6286723A MASK FOR X-RAY EXPOSURE 失效
公开(公告)号：JPS6286723A
公开(公告)日：1987-04-21
申请号：JP22717685
申请日：1985-10-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJIWARA NOBUO , SUZUKI YOSHIKI
IPC分类号： G03F1/00 , G03F1/22 , G03F1/50 , G03F1/84 , H01L21/027 , H01L21/30
摘要： PURPOSE:To form the title mask for X-ray exposure structure with excellent bonding power of X-ray absorbing patterns with a mask substrate as well as long life by a method wherein silicide layers made of absorbing pattern material are junction-formed between X-ray absorbing patterns made of heavy metal and the mask substrate. CONSTITUTION:A silicon nitride film to be a mask substrate 2 is formed on a silicon substrates 1 by pressure-reduced CVD process and then tantalum silicide layers 4 are formed on the overall surface of nitride film 2 by sputtering process etc. Successively tantalum layers to be X-ray absorbing patterns 3 are formed by sputtering process further forming resist layers by spin-coating process. Any specified resist patterns can be formed by exposing and developing the resist layers using electron beams. Finally the tantalum layers and then the silicide layers are etched by reactive ion etching process using the resist patterns as masks to form the specified X-ray absorbing patterns.

20. 发明专利

JP2001156047A MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001156047A
公开(公告)日：2001-06-08
申请号：JP33909799
申请日：1999-11-30
申请人： MITSUBISHI ELECTRIC CORP , RYODEN SEMICONDUCTOR SYST ENG
发明人： SHIMA HIROYUKI , SAWAI HISAHARU , FUJIWARA NOBUO
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing apparatus which can effectively cool the wall surface of a reaction chamber with a simplified device and execute heating, after cooling without requiring a long period. SOLUTION: This semiconductor manufacturing apparatus comprises a chamber 13 to execute the processes to wafers 16 and a nozzle 19 to supply a liquid coolant into a double-structure wall surface 13a of the chamber 13. As the liquid coolant, a coolant which is heated and vaporized under the temperature of the double-structure wall surface 13a during the process, and the double- structure wall surface 13a of the chamber 1 is cooled with the heat of vaporization.

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