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11. 发明专利

JP2005332813A Backlight unit, and liquid crystal display apparatus including it 有权
标题翻译：背光单元和液晶显示装置，包括它
公开(公告)号：JP2005332813A
公开(公告)日：2005-12-02
申请号：JP2005125607
申请日：2005-04-22
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： YAMASHITA HIROBUMI , TERADA TOSHIHIRO , MANIWA TAKASHI , MORI YUSUKE
IPC分类号： G02F1/13357 , F21S2/00 , F21V19/00 , F21V29/00 , F21Y103/025
摘要： PROBLEM TO BE SOLVED: To provide a backlight unit capable of suppressing luminance irregularity as compared with a conventional one.
SOLUTION: This direct type backlight unit 2 is composed by housing, in an outer container 4, curved fluorescent lamps 6 each composed by forming electrodes at both ends of a glass bulb 32 having a folded portion 34 formed by folding a glass tube nearly at the middle part in its longitudinal direction and linear portions 36 and 38 that extend in parallel with each other from both the sides of the folded portion 34. Each curved fluorescent lamp 6 is housed in the outer container 4 in an attitude where both the electrodes (bushes 46) are disposed on the lower side and the folded portion 34 is disposed on the upper side in a state where the backlight unit 2 is used. An inverter device for supplying power for lighting to the curved fluorescent lamps 6 is disposed outside the outer container 4.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够抑制亮度不均匀性的背光单元，与现有技术相比。
解决方案：该直接型背光单元2由在外容器4中容纳的弯曲荧光灯6构成，该荧光灯6通过在玻璃泡32的两端形成电极而构成，该玻璃泡32具有通过折叠玻璃管几乎位于其长度方向的中间部分以及从折叠部分34的两侧彼此平行延伸的直线部分36和38.每个弯曲的荧光灯6以两种方式容纳在外部容器4中电极（衬套46）设置在下侧，折叠部分34设置在使用背光单元2的状态下的上侧。将用于向弯曲荧光灯6照明的电力的逆变器装置设置在外部容器4的外部。（C）2006年，JPO＆NCIPI

12. 发明专利

JP2005306709A METHOD OF MANUFACTURING GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE, GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE OBTAINED BY THE METHOD, AND SEMICONDUCTOR DEVICE INCLUDING THE SAME 有权
标题翻译：制造GaN晶体和GaN晶体衬底的方法，通过该方法获得的GaN晶体和GaN晶体衬底以及包括其的半导体器件
公开(公告)号：JP2005306709A
公开(公告)日：2005-11-04
申请号：JP2004248866
申请日：2004-08-27
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , MORISHITA MASANORI
IPC分类号： C30B29/38 , C30B9/10 , H01L21/208 , H01L33/32 , H01S5/323 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a GaN crystal and a GaN crystal substrate, by which the high quality GaN crystal and GaN crystal substrate can be manufactured under mild conditions of low pressure and low temperature. SOLUTION: In the method of manufacturing the GaN crystal, comprising forming the GaN crystal by reacting gallium and nitrogen in a mixed melt of gallium and sodium under a gas atmosphere containing nitrogen, the reaction of the gallium and the nitrogen is performed under a pressurizing condition that exceeds atmospheric pressure, and the pressure P1 (atm (×1.013×10 5 Pa)) of the pressurizing condition is set so as to satisfy the condition expressed by following conditional expression (I): P≤P1 5 Pa)) denotes the minimum pressure required for generating the GaN crystal at a temperature T°C of the mixed melt. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造GaN晶体和GaN晶体衬底的方法，通过该方法可以在低压和低温的温和条件下制造高质量的GaN晶体和GaN晶体衬底。解决方案：在制造GaN晶体的方法中，包括在含氮和氮气的气氛气氛中，通过镓和氮的混合熔融物中的镓和氮反应形成GaN晶体，镓和氮的反应在超过大气压的加压条件，加压条件的压力P1（atm（×1.013×10 5 Pa））设定为满足由以下条件式（I）表示的条件，：P≤P1<（P + 45）（I）其中，P（atm（×1.013×10 5Pa））表示在温度T°下生成GaN晶体所需的最小压力 C的混合熔体。版权所有（C）2006，JPO＆NCIPI

13. 发明专利

JP2005263622A Method of manufacturing compound single crystal and apparatus for manufacturing it 审中-公开
标题翻译：制造化合物单晶的方法及其制造方法
公开(公告)号：JP2005263622A
公开(公告)日：2005-09-29
申请号：JP2005041711
申请日：2005-02-18
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO , TAKAHASHI YASUHITO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B9/10 , C30B29/38 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a compound single crystal, especially a group III nitride single crystal such as potassium nitride or aluminum nitride, which method is capable of improving a growth rate and growing a single crystal with a high crystal uniformity and a large size in a short time; and an apparatus for manufacturing it. SOLUTION: The compound single crystal is grown while a raw material liquid is being stirred so that the liquid flows from a gas-liquid interface contacting with a raw material gas toward the inside of the liquid. By this stirring, the raw material gas is easily dissolved in the raw material liquid and the supersaturation is attained in a short time to improve the growth rate of the compound single crystal. Since the flow from the gas-liquid interface where the raw material gas concentration is high toward the inside of the raw material liquid where the raw material gas concentration is low, is formed and the dissolution of the raw material gas is homogenized by this mixing, ununiform nucleus formation at the gas-liquid interface is suppressed and the quality of the obtained compound single crystal is improved. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造化合物单晶，特别是氮化三氮合氮化物等III族氮化物单晶的方法，该方法能够提高生长速度并且生长单晶，在短时间内具有高晶体均匀性和大尺寸; 及其制造装置。解决方案：在搅拌原料液体的同时使化合物单晶生长，使得液体从与原料气体接触的气液界面朝向液体内部流动。通过该搅拌，原料气容易溶解在原料液中，在短时间内达到过饱和，提高了化合物单晶的生长速度。由于形成原料气体浓度低的原料气体浓度较高的原料气体浓度的气液界面的流动，并且原料气体的溶解通过该混合均匀化，抑制气 - 液界面处的不均匀核形成，提高所得复合单晶的质量。版权所有（C）2005，JPO＆NCIPI

14. 发明专利

JP2004307333A Method for manufacturing nitride single crystal of group iii element, apparatus used for the same, and nitride single crystal of group iii element obtained by the method 有权
公开(公告)号：JP2004307333A
公开(公告)日：2004-11-04
申请号：JP2004087901
申请日：2004-03-24
申请人： Matsushita Electric Ind Co Ltd , Takatomo Sasaki , 孝友佐々木 , 松下電器産業株式会社
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , KAWAMURA SHIRO , KAI YASUNORI , IMAIDE KAN , KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO
IPC分类号： C30B29/38 , C30B23/02 , C30B25/02
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a gallium nitride single crystal, by which the decomposition of gallium nitride can be suppressed in a sublimation method, and the production efficiency is improved.
SOLUTION: In the method for manufacturing the gallium nitride single crystal, comprising growing the gallium nitride single crystal on the surface of a substrate 3 by feeding a raw material (GaN powder) 2 of the gallium nitride (GaN) single crystal in a crucible 1, then heating the crucible so as to sublimate or evaporate the raw material, and utilizing that the sublimated or evaporated raw material recrystallizes when the temperature is again lowered on the surface of the substrate 3, the growth of the single crystal is performed under pressure. Preferable pressure is ≥5 atm (5×1.013×10
5 Pa). Preferably, the growth of the single crystal is performed in the atmosphere of a mixed gas of gaseous NH
3 and N
2 .
COPYRIGHT: (C)2005,JPO&NCIPI

15. 发明专利

JP2004300024A Method for manufacturing nitride crystal of group iii element, nitride crystal of group iii element obtained by the same, and semiconductor device obtained by using the same 审中-公开
公开(公告)号：JP2004300024A
公开(公告)日：2004-10-28
申请号：JP2004081133
申请日：2004-03-19
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO , ISHIBASHI AKIHIKO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B29/38 , C30B11/06 , H01L33/06 , H01L33/32 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride crystal of a group III element by which the carrier concentration can be easily controlled, the nitride crystal of the group III element obtained by the method, and a semiconductor device obtained by using the nitride crystal. SOLUTION: The method for manufacturing the nitride crystal of the group III element includes a process for growing the crystal by reacting the group III element, nitrogen and a dopant in a melt containing an alkali metal in an atmosphere of a gas containing the nitrogen-containing gas and the dopant. As the group III element, at least one selected from, for example, Ga, Al and In can be used. COPYRIGHT: (C)2005,JPO&NCIPI

16. 发明专利

JP2005339842A Lighting device 审中-公开
标题翻译：照明设备
公开(公告)号：JP2005339842A
公开(公告)日：2005-12-08
申请号：JP2004153769
申请日：2004-05-24
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： YAMASHITA HIROBUMI , IMAI TAKAYUKI , MORI YUSUKE
IPC分类号： G02F1/13357 , F21S2/00 , F21V8/00 , F21Y103/025 , H01J61/42
摘要： PROBLEM TO BE SOLVED: To provide a lighting device irradiating light capable of alleviating color irregularity.
SOLUTION: The lighting device 100 is provided with a U-shaped fluorescent lamp 7 housed in an opening 10 of a lamp house 9, and a diffusing plate 3 fitted at the opening 10 so as to cover the U-shaped fluorescent lamp 7 and transmitting light from the U-shaped fluorescent lamp 7. The U-shaped fluorescent lamp 7 is provided with glass tubes 1, 2 connected with a bent glass tube part 8, a phosphor coating film containing red-color phosphor, green-color phosphor, and blue-color phosphor is coated on the glass tubes 1, 2. On condition that a phosphor ratio K of a weight% R of the red-color phosphor, a weight% G of the green-color phosphor, and a weight% B of the blue-color phosphor contained in the phosphor coating film coated on each glass tube 1, 2 is set as K=B/(R+G), the phosphor ratio at the glass tube 1 is larger than that at the glass tube 2. The glass tube 1 and the glass tube 2 are arranged overlapped on each other as seen from a direction vertical to the diffusing plate 3.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够减轻颜色不均匀性的照明装置的照明装置。解决方案：照明装置100设置有容纳在灯室9的开口10中的U形荧光灯7和安装在开口10上以覆盖U形荧光灯的扩散板3 U型荧光灯7配置有与弯曲玻璃管部8连接的玻璃管1,2，含有红色荧光体的荧光体涂膜，绿色荧光灯磷光体和蓝色荧光体涂覆在玻璃管1,2上。在红色荧光体的重量％R的荧光体比K，绿色荧光体的重量％G和重量涂布在每个玻璃管1,2上的荧光体涂膜中所含的蓝色荧光体的％B设定为K = B /（R + G），玻璃管1的荧光体比例大于玻璃管玻璃管1和玻璃管2从垂直于扩散板3的方向看，彼此重叠配置。版权所有（C）2006，JPO＆NCIPI

17. 发明专利

JP2005302660A Cold cathode fluorescent lamp and backlight unit 有权
标题翻译：冷阴极荧光灯和背光单元
公开(公告)号：JP2005302660A
公开(公告)日：2005-10-27
申请号：JP2004120724
申请日：2004-04-15
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： MANIWA TAKASHI , YAMASHITA HIROBUMI , MORI YUSUKE , TAKASAKI AKISHI
IPC分类号： H01J61/16
摘要： PROBLEM TO BE SOLVED: To provide a cold cathode fluorescent lamp which is more improved than, a cold cathode fluorescent lamp in which mixed gas with neon/argon as the body is sealed in both the lamp efficiency and starting voltage (especially in starting voltage near 0°C). SOLUTION: In the cold cathode fluorescent lamp 26 provided with a tube state glass bulb 32 in which a noble gas mixture is sealed and is formed with a fluorescent film 34 on its interior surface and a pair of electrodes 36 and 38 installed facing each other on both ends of the glass bulb 32, the mixed gas is constituted of 95% neon and 5% krypton (mole ratio). COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种比将阴极/氩气作为本体的混合气体在灯效率和起动电压两者中密封的冷阴极荧光灯更加改进的冷阴极荧光灯（特别是在起始电压接近0°C）。解决方案：在具有管状玻璃灯泡32的冷阴极荧光灯26中，其中惰性气体混合物被密封并且在其内表面上形成有荧光膜34，并且一对电极36和38面向彼此在玻璃泡32的两端，混合气由95％氖和5％氪（摩尔比）组成。版权所有（C）2006，JPO＆NCIPI

18. 发明专利

JP2005039248A Method for manufacturing group iii nitride, method for manufacturing semiconductor substrate, group iii nitride crystal, semiconductor substrate, and electron device 有权
标题翻译：制造III族氮化物的方法，制造半导体衬底的方法，III族氮化物晶体，半导体衬底和电子器件
公开(公告)号：JP2005039248A
公开(公告)日：2005-02-10
申请号：JP2004187983
申请日：2004-06-25
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： H01L21/208 , H01L21/338 , H01L29/812 , H01L33/32 , H01L33/34 , H01S5/323 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing group III nitride crystals of high quality useful for the substrates used for a semiconductor manufacturing process. SOLUTION: A semiconductor layer 12 with a crystalline nucleus growth region 12a is formed on the surface of a semiconductor represented by a compositional formula Al u Ga v In 1-u-v N (wherein, 0≤u≤1, 0≤v≤1, u+v≤1). The crystalline nucleus growth region 12a of the semiconductor layer 12 is made in contact with a melt containing at least one of group III elements selected from a group consists of gallium, aluminum and indium and either of alkali metal or alkaline earth metal in an atmosphere containing nitrogen to grow a group III nitride crystal 13 on the layer 12. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于制造用于半导体制造工艺的基板的具有高质量的III族氮化物晶体的方法。解决方案：在由组成式Al表示的半导体的表面上形成具有晶核生长区域12a的半导体层12在其中，0≤u≤1,0≤v≤1，u +v≤1）。半导体层12的晶核生长区域12a与含有选自镓，铝和铟中的III族元素中的至少一种的元素的熔体接触，并且在含有碱金属或碱土金属的气氛中氮以在层12上生长III族氮化物晶体13。版权所有（C）2005，JPO＆NCIPI

19. 发明专利

JP2005012171A Method for manufacturing group iii nitride substrate and semiconductor device 有权
标题翻译：制造III类氮化物衬底和半导体器件的方法
公开(公告)号：JP2005012171A
公开(公告)日：2005-01-13
申请号：JP2004075103
申请日：2004-03-16
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO , ISHIBASHI AKIHIKO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B11/06 , C30B29/38 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride substrate having a low dislocation density and a semiconductor device manufactured by the method. SOLUTION: In the method for manufacturing a group III nitride substrate, a group III element and nitrogen are reacted in an alkali metal solution in an atmosphere including nitrogen to generate and grow a crystal, a plurality of parts of a group III nitride semiconductor layer prepared in advance are selected as at least one of seed crystals for the generation and growth of a group III nitride crystal, and the surface of the seed crystal is made to come into contact with the solution. COPYRIGHT: (C)2005,JPO&NCIPI

20. 发明专利

JP2003317669A Discharge lamp device and backlight 有权
标题翻译：放电灯装置和背光灯
公开(公告)号：JP2003317669A
公开(公告)日：2003-11-07
申请号：JP2002118353
申请日：2002-04-19
申请人： Matsushita Electric Ind Co Ltd , West Electric Co Ltd , ウエスト電気株式会社 , 松下電器産業株式会社
发明人： TANABE MASANORI , MATSUOKA KOICHIRO , MORI YUSUKE , DEJIMA TAKASHI , YAMAMOTO NORIKAZU , SHIGETA TERUAKI , SHIMIZU NOBUHIRO
IPC分类号： F21V8/00 , F21S2/00 , F21V7/00 , F21V19/00 , F21Y103/00 , H01J61/06 , H01J65/00 , H01J65/04
CPC分类号： H01J65/00 , H01J65/046
摘要： PROBLEM TO BE SOLVED: To provide a discharge lamp device with which it is easy to mount an outer electrode on a luminous tube and which can have a plurality of outer electrodes held with accuracy by the luminous tube.
SOLUTION: A tubular luminous tube 1 with a medium for discharge sealed inside, an inner electrode 2 fitted inside the luminous tube, and an outer electrode unit 4 mounted on the outside of the luminous tube 1. Then outer electrode unit includes outer electrodes 4b arrayed intermittently in a tube axis direction in plural and having parts adjacent to an outer wall face and an engagement part 4c for having the outer electrodes engaged with the luminous tube while integrally linking them. As the engagement part pinches the luminous tube with its part, the outer electrode unit is held around the luminous tube. It is so constructed that the luminous tube is lit by impressing voltage between the inner electrode and the outer electrodes.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种容易将外部电极安装在发光管上的放电灯装置，并且其可以具有由发光管准确地保持的多个外部电极。解决方案：具有密封在内部的用于放电的介质的管状发光管1，安装在发光管内的内部电极2和安装在发光管1的外侧的外部电极单元4.然后外部电极单元包括外部电极4b沿管轴方向间歇地排列成多个并且具有与外壁面相邻的部分，以及接合部4c，用于使外电极与发光管接合而一体地连接它们。当接合部分将发光管与其部分夹持时，外电极单元被保持在发光管周围。它被构造成通过在内部电极和外部电极之间施加电压来点亮发光管。版权所有（C）2004，JPO

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