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    • 11. 发明专利
    • CHARGED BEAM LITHOGRAPHY DEVICE AND PATTERN FORMING METHOD USING CHARGED BEAM
    • JPH05160009A
    • 1993-06-25
    • JP32460591
    • 1991-12-09
    • MITSUBISHI ELECTRIC CORP
    • KAMIYAMA KINYAMORIIZUMI KOICHI
    • G03F7/20H01L21/027
    • PURPOSE:To correct the deflection of a charged beam based on the position on a lithography field, and the prescribed pattern is drawn in a highly precise manner without deterioration of lithography efficiency by controlling an electrooptical system based on the above-mentioned correction. CONSTITUTION:A shot-time correcting/computing part 19 and the correction table 20 in a patterning field are additionally provided on the electrooptical system control part which has been heretofore in use. The relation between the amount of exposure and the position on the patterning field, which is necessary for drawing of pattern, is housed as the data in the correction table 20 in the patterning field. On the shot time correction/computing part 19, the exposure amount information is corrected based on the data of in-pattering field correction table 20 and the deflection positioning information is given to the beam position high speed D/A converter 16 from the high speed data controller 17, and the corrected information is sent to a blanking control circuit 14. As a result, the amount of exposure in each part of each patterning field 12 is adjusted, and the deviation from the design size can be reduced on the pattern which is drawn on each patterning field 12 irrespective of its position.
    • 13. 发明专利
    • SCANNING TYPE ELECTRON MICROSCOPE
    • JPS62229648A
    • 1987-10-08
    • JP5429986
    • 1986-03-11
    • MITSUBISHI ELECTRIC CORP
    • MORIIZUMI KOICHI
    • H01J37/244H01J37/28
    • PURPOSE:To make it possible to observe the surface of a sample accurately even though the sample has a deep groove-form pattern, by furnishing a collector to collect the secondary electrons close to and parallel to the surface of the sample. CONSTITUTION:When electron beams are scanned over the surface of a sample 3, secondary electrons are generated. The secondary electrons are collected by a collector 9 on the surface of the sample 3 in the direction vertical to the sample surface. Therefore, such secondary electrons that are generated from the bottom of a deep groove-form pattern can be collected easily by the collector 9. The secondary electrons collected by the collector 9 are further collected by a collector 5a in the direction of a scintillator 6, output from a photoelectron multiplier tube 8 as a secondary electron detecting signal, after passing through the scintillator 6 and a photopipe 7, and the sample surface is displayed on a CRT. Since the secondary electrons generated even at the bottom of the deep groove-form pattern can be collected easily in such a way an accurate observation can be realized.
    • 14. 发明专利
    • ELECTRON BEAM EXPOSURE DEVICE
    • JPS6286718A
    • 1987-04-21
    • JP22719885
    • 1985-10-11
    • MITSUBISHI ELECTRIC CORP
    • SAITO KAZUNORIMORIIZUMI KOICHI
    • H01L21/027H01J37/305H01L21/30
    • PURPOSE:To form a resist pattern perfectly coinciding with a specified pattern by one time scanning by a method wherein picture element data to form a pattern are stored in a storage means while the irradiation level in a picture element unit is processed according to the picture element data to modulate the irradiation level of electron beams to that processed in the picture element unit. CONSTITUTION:Electron beams radiated from an electron gun 1 are converged on condenser lenses 2 and object lenses 3 to irradiate a mask or a wafer substrate arranged on a stage 4. Besides, picture drawing data stored in a computer 9 are fed to a picture data control circuit 10 to be stored in an irradiation level storage circuit 12 as picture element data with floating decimal points. When a series of picture drawing data is transmitted from the computer 9 to the picture element data control circuit 10, an irradiation level processing circuit 11 correction-processes the irradiation level of picture element data stored in the irradiation level storage circuit 12. Therefore the irradiation level d lm for each picture element equivalent to specified irradiation level stored can be decided to form a resist pattern corresponding to a specified pattern 31.
    • 17. 发明专利
    • METHOD AND DEVICE FOR REMOVING FOREIGN MATTER
    • JPH07195046A
    • 1995-08-01
    • JP157094
    • 1994-01-12
    • MITSUBISHI ELECTRIC CORP
    • MORIIZUMI KOICHI
    • B08B6/00H01L21/304
    • PURPOSE:To surely remove foreign matter by one piece each and to omit the repetition of washing by electrifying a needle, bringing the needle in proximity to a work piece and attracting the foreign matter on the front surface thereof, then bringing the needle in proximity to an electrified foreign matter collecting plate and atracting the foreign matter attracted to this foreign matter collecting plate. CONSTITUTION:A base 3 to be placed with a photomask 2 which is the work piece is installed atop a stage 1. The needle 4 is freely, three-dimensionally, movably arranged above the stage 1. Further, the needle 4 is connected to a DC power source 7 by a switching means 6. The foreign matter collecting plate 8 is arranged around the photomask 2 atop the stage 1. The charge reverse from the charge of the needle 4 is, thereupon, generated on the surface of the foreign matter by electrostatic induction when the needle 4 is electrified and is brought near to the foreign matter atop the photomask 2 and, therefore, the foreign matter is attracted to the needle 4 by Coulomb force. The foreign matter is thereafter attracted to the foreign matter collecting plate 8 by the similar effect when the needle 4 is brought near to the foreign matter collecting plate 8.
    • 20. 发明专利
    • ELECTRON-BEAM EXPOSURE METHOD
    • JPH03166713A
    • 1991-07-18
    • JP30478889
    • 1989-11-27
    • MITSUBISHI ELECTRIC CORP
    • MORIIZUMI KOICHI
    • H01L21/027G03F7/20H01J37/302
    • PURPOSE:To correct a proximity effect with high accuracy in a short time by dividing a drawing pattern into a plurality of unit patterns, correcting the proximity effect and connecting a unit pattern in the same quantity of exposure. CONSTITUTION:A drawing pattern 1 is divided into unit patterns 1a-1n and a central pattern 1p and a drawing pattern 3 into unit patterns 3a-3h and a central pattern 3i respectively, and a drawing pattern 2 is not divided and drawing pattern 2 itself is formed in a unit pattern 2a because the drawing pattern 2 has the same size as the unit pattern. A proximity effect is corrected at every unit pattern, the optimum quantities of electron beams irradiated to each unit pattern are arithmetically operated respectively, mutually adjacent unit patterns, the arithmetically operated quantities of irradiation of which are equalized, are connected and drawing data are prepared, and electron-beam exposure is conducted by using the drawing data. Accordingly, the exposure method of electron beams, by which the proximity effect is corrected with high accuracy in a short time, can be acquired.