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11. 发明专利

JPS5932267A Solid-state image pickup device 失效
标题翻译：固态图像拾取器件
公开(公告)号：JPS5932267A
公开(公告)日：1984-02-21
申请号：JP14251482
申请日：1982-08-17
申请人： Matsushita Electric Ind Co Ltd
发明人： CHIKAMURA TAKAO , OOTA YOSHIO , MIYATA YUTAKA , YANO KOUSAKU , FUJIWARA SHINJI , OGURA MOTOTSUGU , FUJIMOTO MAKOTO
IPC分类号： H01L27/148 , H04N5/30 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/369 , H04N5/3728
CPC分类号： H04N5/30
摘要： PURPOSE:To attain high sensitivity, low residual image and high yield, by forming a drain section adjacent to the vertical transfer section to a part other than effective picture element. CONSTITUTION:A part A is an effective picture element section converting an incident light into an electric signal, a part B is a drain section formed other than the effective picture element, transfer electrodes 3', 4' are the same as transfer gate electrodes 3, 4 of the part A, but wirings 7, 8 coupled electrically to diodes 5, 6 being a sweep-out drain section are formed. Thus, excessive charges are all discharged to the sweep-out drains 5, 6.
摘要翻译：目的：为了获得高灵敏度，低残留图像和高产量，通过将形成与垂直转印部分相邻的排出部分到除了有效图像元件之外的部分。构成：部分A是将入射光转换为电信号的有效像素部，部分B是形成于有效像素以外的漏极部，转印电极3'，4'与转印栅电极3相同，部分A中的4个，但是形成了与二极管5,6连接的布线7,8，其是清除漏极部分。因此，过量的电量都被排放到清扫排水管5,6。

12. 发明专利

JPS5918685A Manufacture of photoelectric converter element 失效
标题翻译：光电转换元件的制造
公开(公告)号：JPS5918685A
公开(公告)日：1984-01-31
申请号：JP12812182
申请日：1982-07-21
申请人： Matsushita Electric Ind Co Ltd
发明人： TAKEDA YOSHIYA , HOTSUTA TEIKICHI , CHIKAMURA TAKAO , YANO KOUSAKU , MIYATA YUTAKA , FUJIWARA SHINJI
IPC分类号： H01L27/146 , H01L31/0248 , H01L31/20
CPC分类号： H01L31/202 , Y02E10/50 , Y02P70/521
摘要： PURPOSE:To obtain an element, which has a stopper type structure, high resolution, and low dark currents, by forming a non-single crystal semiconductor film layer on one or both sides of a non-single crystal semiconductor film made by a reactive sputtering method by using a plasma CVD method. CONSTITUTION:Under the state a transparent electrode 2 is formed on a glass substrate 1, amorphous Si 3 including hydrogen is formed by a plasma CVD method. Amorphous Si 4 including hydrogen is formed thereon by a reactive sputtering method. Since this is used as a target for an image pickup tube, an Sb2S3 layer 5 is formed on the Si 4. The amorphous semiconductor made by the reactive sputtering method can be made to have higher resistance readily in comparison with the plasma CVD method. The sputtering method is promising as an image pickup device which requires high resolution. Since the discharges power of the method is large, it has the defect of giving damages to the substrate. Therefore, by using both methods, the photoelectric converter element having excellent quality can be obtained.
摘要翻译：目的：通过在由反应溅射制成的非单晶半导体膜的一面或两面上形成非单晶半导体膜层，以获得具有塞子型结构，高分辨率和低暗电流的元件方法。构成：在该状态下，在玻璃基板1上形成透明电极2，通过等离子体CVD法形成包含氢的非晶Si 3。通过反应溅射法在其上形成包含氢的无定形Si 4。由于将其用作图像拾取管的目标，所以在Si 4上形成Sb 2 S 3层5.与等离子体CVD法相比，通过反应溅射法制成的非晶半导体可以容易地具有更高的电阻。溅射法作为需要高分辨率的图像拾取装置是有希望的。由于该方法的放电功率大，所以具有对基板造成损害的缺点。因此，通过使用这两种方法，可以获得具有优良品质的光电转换元件。

13. 发明专利

JPS58171851A SOLID-STATE IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS58171851A
公开(公告)日：1983-10-08
申请号：JP5502182
申请日：1982-04-01
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OOTA YOSHIO , CHIKAMURA TAKAO , YANO KOUSAKU , MIYATA YUTAKA , FUJIWARA SHINJI
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/369 , H04N5/372
摘要： PURPOSE:To increase the effect of blooming restraint without decreasing the sensitivity or generating the baking by a method wherein the effetive bias voltage impressed on a photoelectric conversion film is largely increased by means of pulses wherein the duty ratio is extremely small. CONSTITUTION:An Si scanning surface S is constituted of a charge implanted region 11 provided by diffusing an impurity n into a p type semiconductor substrate, and an n type well 12 consisting of the impurity to form a buried type CCD, and then a photoelectric conversion surface region A is laminated on the scanning suface S. By impressing pulses onto a transfer electrode T, the signal charges existing in the region 11 are allowed to be read into a CCD transfer channel TR via a gate channel region C. The effective reverse bias voltage of the electric conversion film is increased exponentially by extremely reducing the duty ratio of this pulse.

14. 发明专利

JPS56140773A DRIVING METHOD OF SOLID STATE PICKUP ELEMENT 失效
公开(公告)号：JPS56140773A
公开(公告)日：1981-11-04
申请号：JP4395180
申请日：1980-04-02
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TANAKA OOMICHI , FUJIWARA YOSHIHIRO , FUJIMOTO MAKOTO , CHIKAMURA TAKAO
IPC分类号： H04N5/335 , H04N5/341 , H04N5/357 , H04N5/3728
摘要： PURPOSE:To reduce residual charge component and thus prevent the occurrence of an after-image, by eliminating the excessive charge exceeding the transfer capacity of the change transfer part through a transfer in the blanking period of a scan. CONSTITUTION:A solid state pickup element consists of the photoelectric converting part 101 comprising the photodiode and others, the vertical charge transfer line 102 comprising the CCD and others, the reading gate 103, the horizontal charge transfer line 104 comprising the CCD and the like, and the output signal extracting part 105 comprising the floating gate and others. The excessive charge exceeding the transfer capacity of the charge transfer parts 102 and 104 are transferred to eliminate in the scanning blanking period, among the signal charge that received a photoelectric conversion through the part 101.

15. 发明专利

JPS55108782A SOLID PICKUP DEVICE 失效
公开(公告)号：JPS55108782A
公开(公告)日：1980-08-21
申请号：JP1574679
申请日：1979-02-13
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： CHIKAMURA TAKAO , OGAWA KAZUFUMI , TERUI YASUAKI , FUJIWARA SHINJI , FUKAI SHIYOUICHI
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/351 , H04N5/359 , H04N5/369 , H04N5/372 , H04N5/374 , H04N5/378
摘要： PURPOSE:To make possible the pickup with constant brightness and prevent a blooming phenomena by a method wherein light sensitivity is electrically adjusted by applying voltage to the electrode on a light conductor in proportion to a light output. CONSTITUTION:A first electrode 17 is formed at every unit element of a solid pickup board, and a light conductor 19 and a second electrode 20 are formed on the surface of the solid pickup board including the first electrode. Then electric potential of the first electrode 17 is reduced in proportion of light incident 21 if any, and the signal is transferred to a voltage applying means 22. Furthermore, the voltage in proportion to the signal transferred is applied to the second electrode 20, so that light sensitivity is automatically adjusted and the brightness of the pickup is made constant.

16. 发明专利

JPS5556773A SOLID STATE PICKUP DEVICE 失效
公开(公告)号：JPS5556773A
公开(公告)日：1980-04-25
申请号：JP12961078
申请日：1978-10-20
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： CHIKAMURA TAKAO , FUJIWARA SHINJI , FUKAI SHIYOUICHI
IPC分类号： H01L27/146 , H01L31/00 , H04N5/30 , H04N5/335 , H04N5/361 , H04N5/369 , H04N5/372
摘要： PURPOSE:To obtain a solid state pickup device which features the low-voltage operation, a high sensitivity and small dark current, by limiting the film pressure for the 1st and 2nd layers of the hetero junction. CONSTITUTION:Low-fusing point glass insulator layer 15 is formed on P-type silicon substrate 10 possessing 1st gate electrode 14 composed of the poly-silcon and gate oxide film 16. And the contact window is opened at the area of N -region 11, and then the sudden stage error is made gentle through the heat treatment. Then 1st electrode 17 is formed, and 1st layer 18 containing ZnSe or CdS is formed by 0.05- 0.2mum on electrode 17. After this, (Zn1-XCdXTe)1-y(In2Te3)Y which is photoelectric conductor 19 is formed by 0.5-2.0mum. The hetero junction thus obtained undergoes the heat treatment in the vacuum atmosphere, and then the transparent electrode containing In2O3 or SnO2 is formed. Thus a solid state pickup device is obtained.

17. 发明专利

JPS5527772A SOLID STATE PICKUP DEVICE 失效
公开(公告)号：JPS5527772A
公开(公告)日：1980-02-28
申请号：JP10109578
申请日：1978-08-18
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： CHIKAMURA TAKAO , OGAWA KAZUFUMI , TERUI YASUAKI , FUJIWARA SHINJI , FUKAI SHIYOUICHI
IPC分类号： H01L27/146 , H01L31/00 , H04N5/30 , H04N5/335 , H04N5/351 , H04N5/355 , H04N5/359 , H04N5/369 , H04N5/372 , H04N5/374
摘要： PURPOSE:To eliminate the picture disturbance to the intensive light and thus to enable the picking- up by applying the DC bias voltage to the electrode on the photo conductor in order to give the functin to reduce the blooming phenomenon as well as the function to control the light sensitivity. CONSTITUTION:The diode of n -type region 11 is formed on n-type semiconductor substrate 10, and then p -type region 12 is formed to secure the function of the potential barrier which blocks the electron injection from region 11 in the case of the CCD action, along with n -type region 13 which functions as the potential well in the case of the BBD action. Furthermore, gate oxide film 16 functioning as the insulator film is formed on substrate 10 and between substrate 10 and 1st gate electrode 14 along with electrode 14 formed on substrate 10. At the same time, 1st electrode 17 of the diode connected electrically to region 11 is formed along with insulator layer 16 which give an electric isolation between electrode 17, substrate 10 and electrode 14 respectively. Then the positive potential is applied to transparent electrode 20 formed on the upper surface of photo conductor 19 from voltage source 21, and the output of the optical signal is detected by source 21. And the output signal is converted into the DC voltage and then fed back to source 21. Thus the blooming phenomenon can be reduced along with the control secured for the light sensitivity.

18. 发明专利

JPS5110722A DENKYOKUYOKIBANNO SEIZOHOHO 失效
公开(公告)号：JPS5110722A
公开(公告)日：1976-01-28
申请号：JP8183374
申请日：1974-07-16
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： CHIKAMURA TAKAO , FUJIWARA SHINJI , EGUCHI OSAMU , FUKAI SHOICHI
IPC分类号： H01J9/233 , H01J29/02 , H01J31/46

19. 发明专利

JPH01116622A DRIVING VOLTAGE SETTING METHOD FOR LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH01116622A
公开(公告)日：1989-05-09
申请号：JP27353887
申请日：1987-10-30
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OGAWA TETSU , MIYATA YUTAKA , HOTTA SADAKICHI , CHIKAMURA TAKAO
IPC分类号： G09G3/36 , G02F1/133
摘要： PURPOSE:To compensate a flicker as the whole screen by setting an offset voltage between the upper and the lower opposed electrodes for causing the deterioration of a liquid crystal cell, so that a luminance modulation degree of a specific frequency which is derived by an optical response waveform goes to minimum. CONSTITUTION:Light F(t) which drives a liquid crystal by inverting the polarity of a display signal at every one line of a scanning line or a signal line and brought to sine wave vibration by a single frequency FHz, its average luminance L, an angular velocity omega, the max. value F(t)max of the light which is brought to sine wave vibration and the min. value F(t)min of same are set, and the light F(t) which is brought to sine wave vibration and a luminance modulation degree (m) for showing a degree of a flicker are parameters defined by an expression I and an expression II. In such a state, the flicker of the liquid crystal display device is determined by using this evaluation parameter, and a driving voltage is set so that the evaluation parameter goes to min. In such a way, the flicker can be compensated without generating an unnecessary offset voltage between the upper and the lower opposed electrodes.

20. 发明专利

JPH01115036A IMAGE PICKUP TUBE TARGET 失效
公开(公告)号：JPH01115036A
公开(公告)日：1989-05-08
申请号：JP27186687
申请日：1987-10-29
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： CHIKAMURA TAKAO , FUKAI SHOICHI , MIYATA YUTAKA
IPC分类号： H01J29/45
摘要： PURPOSE:To make it possible to realize high sensitivity achieved by avalanche multiplication at a low bias voltage by forming, on a photoelectric conversion film, two or more layers of thin film in which a forbidden band varies in the thickness direction. CONSTITUTION:In the direction of film thickness, there are a photoelectric conversion film 12a with a band gap changed in a thickness-wise direction, and a hole blocking layer 12b. A hole 17a and an electron 17b are excited in the photoelectric conversion film 12a due to incident light 14, and the electron 17b travels via an electric field, finally reaching the side of a transparent electrode 11. On the other hand, the hole 17a moves within the photoelectric conversion film 12a. However, strong potential is internally formed within the photoelectric conversion film 12a and the hole 17a receives acceleration energy enough to excite a space between bands. Consequently, the hole 17a travels within the photoelectric conversion film 12a, causing the double generation of avalanche, and reaches an electron blocking layer 13. This hole 17a modulates potential charged with an electron beam 15 and turns to be a signal current. In this way, the fully excited hole 17a generates a doubled avalanche and, therefore, high sensitivity is available.

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