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1. 发明专利

JPH0713200A ACTIVE MATRIX LIQUID CRYSTAL DISPLAY AND DRIVING METHOD THEREFOR 失效
公开(公告)号：JPH0713200A
公开(公告)日：1995-01-17
申请号：JP15740493
申请日：1993-06-28
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MINAMINO YUTAKA , TAKEDA YOSHIYA , HORI SEIICHIRO
IPC分类号： G02F1/133 , G02F1/136 , G02F1/1368
摘要： PURPOSE:To ameliorate the degradation in transmittance and to provide the liquid crystal display having a high opening rate by constituting a source electrodes so as to overlap on a pixel electrode and forming this electrode so as to constitute a part or the whole of the light shielding body of the liquid crystal panel. CONSTITUTION:The source electrode of the liquid crystal panel is so constituted as to overlap on the pixel electrode and the liquid crystal panel is provided with the function of a black matrix by this source electrode. Namely, the source electrode 3S is overlapped on the pixel electrode 4 as a design pattern of an array substrate 6 of a thin film transistor. As to light shielding of the part along the gate electrode 3G of the pixel, this part is made correspondent to the black matrix of a counter substrate at need. Driving (IH inversion driving) by which the polarities of the image signal applied by the source electrode 3S are inverted from the potential of the counter electrode at every timing of the scanning signal given by a scanning electrode is adopted as the method for driving this liquid crystal panel. The generation of tailing is obviated if the panel is constituted in such a manner.

2. 发明专利

JPH05113773A LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH05113773A
公开(公告)日：1993-05-07
申请号：JP27517391
申请日：1991-10-23
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MAEDA HIROSHI , TAKEDA YOSHIYA
IPC分类号： G02F1/136 , G02F1/13 , G02F1/1362 , G02F1/1368 , G09G3/36
摘要： PURPOSE:To provide a liquid crystal display device capable of saving breakage of wiring while preventing deterioration of a device due to static electricity, and high in yielding, low in cost, and excellent in display quality. CONSTITUTION:A liquid crystal display device is provided with an auxiliary signal wiring 32 connected to a potential in a printed circuit board 29 through a TAB wiring 26 in which a drive circuit is provided in an area near a signal wiring electrode 31 on the side at which the drive circuit is not connected. Also, if the signal wiring is broken, it can be saved by the auxiliary wiring 32.

3. 发明专利

JPH0344968A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0344968A
公开(公告)日：1991-02-26
申请号：JP18111289
申请日：1989-07-12
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OTSUKA REI , TAKEDA YOSHIYA
IPC分类号： H01L23/52 , H01L21/3205 , H01L29/78 , H01L29/786
摘要： PURPOSE:To manufacture a semiconductor device having a simple structure at a high yield through a small number of manufacturing processes by providing a plurality of silicon films of non-single crystals at specific positions and making the film on one side to contain more hydrogen elements. CONSTITUTION:After forming a Cr metal layer 2 by sputtering, the layer 2 is selectively etched. Then the layer 2 is successively coated with SiNx layer 3, a-Si layer 4 containing little impurities, snd SiNx layer 5 of specific concentrations. The layer 5 contains more hydrogen than the layer 3 does and the layer 3 is composed principally of a high-melting point metal containing a nonmetallic element between a silicon film of non-single crystals and wiring. In addition, the layer 5 is formed between the layer 3 and the above-mentioned silicon film of non-single crystals. When such structure is used, the problem of stripping off can be eliminated, since no n a-Si film is formed, and the number of manufacturing processes can be reduced while the ohmic property is maintained in the connection between the layer 4 and metallic wiring. Therefore, the yield can be improved and wiring resistance can be reduced.

4. 发明专利

JPH02268460A ELECTROSTATIC BREAKDOWN PREVENTING CIRCUIT 失效
公开(公告)号：JPH02268460A
公开(公告)日：1990-11-02
申请号：JP9011589
申请日：1989-04-10
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TAKEDA YOSHIYA , MINAMINO YUTAKA
IPC分类号： H01L27/06 , H01L23/522 , H01L23/556 , H01L23/60 , H01L23/62 , H03F1/52 , H03K19/003
摘要： PURPOSE:To prevent electrostatic breakdown by connecting two diodes in a specified direction between an outer input terminal and an inner circuit of an IC device and by realizing specified relationship between a driving voltage range of the IC and a threshold voltage of the diode. CONSTITUTION:Diodes D13 and D22 are connected to an outer connecting terminal 4 of a gate electrode busbar of an inner circuit 1 which consists of an aSi thin film transistor array formed on a glass substrate. The other ends 5, 6 of the diode are connected to a source electrode busbar. A threshold voltage of the diode is made Vt1, and Vt2; and -Vt2 aSi/iaSi/SiNx and composition of SiNx can control a threshold by film thickness.

5. 发明专利

JPH0289029A MEMORY DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH0289029A
公开(公告)日：1990-03-29
申请号：JP24011188
申请日：1988-09-26
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TAKEDA YOSHIYA , KAWAGUCHI TAKAO , MINAMINO YUTAKA , NAGATA SEIICHI
IPC分类号： G02F1/135 , G02F1/136 , G02F1/1362 , G02F1/1368 , G06F3/147 , G09F9/30 , H01L21/336 , H01L21/822 , H01L27/04 , H01L27/12 , H01L29/78 , H01L29/786
摘要： PURPOSE:To improve yield and to improve the uniformity of the luminance on the right and left of a screen by forming the address lines which are the gate electrode of a TFT array into a light guide structure. CONSTITUTION:An electric signal is transmitted from a 1st electrode 11 to the 2nd electrode 5 in the period when light is introduced into a light guide 1 to lower the resistance of a photoconductive layer 4. The photoconductive layer 4 is held in the dark to store the electric signal during the memory period. The light is introduced into the light guide 1 to lower the resistance of the photoconductive layer 4 and and the stored electric signal is read out through the 1st electrode 11 at the time of reading out the electric signal. Short-circuiting between the X and Y electrodes is, therefore, eliminated and the signal transmission lines can be disposed where there are no steps. The yield is improved in this way and the ununiformity on the right and left of the screen is eliminated in case of using the TFT array to the large-sized liquid crystal display device.

6. 发明专利

JPH01248134A SELECTIVE ETCHING METHOD FOR THIN FILM AND THIN-FILM ELEMENT 失效
公开(公告)号：JPH01248134A
公开(公告)日：1989-10-03
申请号：JP7670288
申请日：1988-03-30
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ISHIHARA SHINICHIRO , OTSUKA REI , MINAMINO YUTAKA , KAWAGUCHI TAKAO , TAKEDA YOSHIYA , NAGATA SEIICHI
IPC分类号： H01L21/306 , G02F1/133 , G02F1/136 , G02F1/1368
摘要： PURPOSE:To facilitate the production process and to reduce the production cost by forming conductive films in such a manner that the spacing arriving at a 1st conductive film is generated in the end face part of the 2nd conductive film and etching the 1st conductive film along the end face through this spacing. CONSTITUTION:The 1st conductive film 2 and the 2nd conductive film 3 are successively formed on an insulating substrate 1 and only the 2nd conductive film is first selectively etched. A thin insulating film 5 is thereafter formed thereon. This thin film and the 2nd conductive film are required to withstand the etching soln. for the 1st conductive film. The thin insulating film 5 is so formed as to generate the spacing at the end face formed when the 2nd conductive film is selectively etched. The 1st conductive film 2 is thereafter etched through the spacing by the etching soln. for the 1st conductive film. The stage is thereby simplified.

7. 发明专利

JPH01164074A MANUFACTURE OF AMORPHOUS SILICON PHOTOCONDUCTIVE FILM 失效
公开(公告)号：JPH01164074A
公开(公告)日：1989-06-28
申请号：JP23301288
申请日：1988-09-16
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TAKEDA YOSHIYA , FUJIWARA SHINJI
IPC分类号： H01L31/08 , H01L21/205 , H01L31/0248 , H01L31/09 , H01L31/20
摘要： PURPOSE:To obtain an image pickup tube target whose number of pinholes is a few and whose photoconductive characteristic is excellent by a method wherein a hydrogen concentration value of a first amorphous silicon film is controlled so as to be smaller than a hydrogen concentration value of a second amorphous silicon film when a film is to be formed, CONSTITUTION:When a layer 3 whose hydrogen concentration value is large is formed on the surface side of a film, it is possible to restrain a carrier from being injected from an electrode 4 on the opposite side of a transparent electrode 1; a dark current is reduced. For example, a photoconductive film 33 whose hydrogen concentration value is comparatively small is formed on an In2O3 transparent electrode 32 on a glass substrate 31 by using a magnetron sputtering device under conditions of a substrate temperature of 200 deg.C, an argon pressure of PAr=5X10 Torr and a discharge electric power of 200W under a hydrogen partial pressure of PH2=2X10 Torr for 10 minutes; after that, a hydrogen partial pressure of PH2=8X10 Torr is introduced for 60 minutes; a photoconductive film 34 whose hydrogen concentration value is comparatively large is formed; a good photoconductive film without a pinhole and with a thickness of 1mum can be obtained.

8. 发明专利

JPH01133323A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH01133323A
公开(公告)日：1989-05-25
申请号：JP29235787
申请日：1987-11-19
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TAKEDA YOSHIYA
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To perform microetching of a layer without giving no damage to a foundation by using gas for etching containing the first gas having fluorine as a constituent and the second gas having nitrogen as a constituent so as to etch the layer formed on tantalum oxide. CONSTITUTION:Fluorine hydrocarbon system gas such as CF4, CHF3, nitrogen fluoride such as NF3 and XeF are used as the first gas containing fluorine as a constituent, while nitrogen oxide such as N2, N2O and NH3, NF3 are used as the second gas. A means, which generally excites a substance, such as plasma discharge, ultraviolet ray radiation may do as a means for forming the first and the second gas mentioned above into radicals and ions of fluorine and nitrogen. A radical of fluorine reacts on Si to become silicon fluoride and tantalum becomes gas called tantalum fluoride having high vapor pressure so as to advance etching. Here, under existing fluorine, the radical of nitrogen is excluded from advancing to silicon nitride by reacting on Si. However, in the case of tantalum, reaction on tantalum nitride having low vapor pressure on the tantalum surface advances even under existing fluorine to prevent further etching so as to obtain a large etching selection ratio.

9. 发明专利

JPH01101646A MANUFACTURE OF ACTIVE MATRIX LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH01101646A
公开(公告)日：1989-04-19
申请号：JP26030587
申请日：1987-10-15
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KAWAGUCHI TAKAO , TAMURA TATSUHIKO , TAKEDA YOSHIYA
IPC分类号： G01R31/317 , G01R31/316 , G02F1/13 , G02F1/133 , G02F1/136 , G02F1/1368 , G09F9/30 , G09F9/35 , H01L21/66 , H01L21/82 , H01L27/12
摘要： PURPOSE:To reduce the assembly of a bad panel by electrically parallely short- circuiting row electrode wires and file electrode wires, and judging the title capacitor device as a good one if specific conditions are satisfied thereupon and proceeding an assembly process. CONSTITUTION:During or after the manufacture of an active matrix array substrate, row electrode wires a1-a8 or file electrode wires b1-b9 are arranged such that the row wires of positive integers are electrically connected in parallel to each other and the file wires of positive integers are connected in the same manner. Here, an array substrate which satisfies a relation (I) is regarded as being good and sent to a panelling process. In the above relation, designated at I1 is a current which flows when a positive voltage is applied to the row electrode lines a1-a8 which supply a driving signal to switching elements in a check process on the assumption of the aforesaid arrangement of the row and file electrode wires, at least with respect to the file electrode wires b1-b9, I2 is a current per one switching element, and n is a predetermined numerical value. Thus, there can be detected the number ot point defects associated with the short-circuit which might be produced in gate and source electrodes respectively, thereby reducing any loss due to the point defect on the manufacture of the device.

10. 发明专利

JPS63139320A ACTIVE MATRIX SUBSTRATE 失效
公开(公告)号：JPS63139320A
公开(公告)日：1988-06-11
申请号：JP28704486
申请日：1986-12-02
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MINAMINO YUTAKA , OOKAWA NORIKO , TAKEDA YOSHIYA , KAWAGUCHI TAKAO , NAGATA SEIICHI
IPC分类号： H01L27/12 , G02F1/133 , G02F1/136 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L29/78 , H01L29/786
摘要： PURPOSE:To increase an auxiliary capacity of a liquid crystal, and to prevent short-circuiting between first and second transparent conductive films, to be caused by a dielectric layer, by using Ta2O5 as a dielectric material inserted and held between the first transparent conductive film and the second transparent conductive film which are formed on a glass substrate. CONSTITUTION:On a glass substrate 10, the first transparent conductive film ITO11 is stuck and formed, this ITO11 is etched in a prescribed shape, and thereafter, by a reactive spattering method, Ta2O512 is formed to a prescribed thickness. Subsequently, on said Ta2O5, the second transparent conductive film ITO13 is formed to a prescribed thickness by a DC spattering method. By inserting and holding the Ta2O5 between said first and second ITO11 and ITO13, an auxiliary capacity Cadd is formed. After this auxiliary capacity Cadd is formed, an FET by a gate electrode 14 by Cr, a semiconductor layer 16, a source electrode 17, and a drain electrode 18 is formed. In such a way, an auxiliary capacity of a liquid crystal is increased, and a short circuit between the ITOs 11, 13 is prevented.

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