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11. 发明专利

JPH03266351A DISCHARGE LAMP DEVICE FOR VACUUM 失效
公开(公告)号：JPH03266351A
公开(公告)日：1991-11-27
申请号：JP6425290
申请日：1990-03-16
申请人： HITACHI LTD , BABCOCK HITACHI KK
发明人： KAWASUMI KENICHI , INADA AKIO , ADAKA SABURO
IPC分类号： H01J61/24 , H01J5/50
摘要： PURPOSE:To make a vapor pressure properly controllable without electric breakdown at the time of supplying a high voltage because of the short time for drying and discharging, by filling the gap between the housing of an end part of a discharge lamp and the end part with a metallic foil having an excellent heat conductivity, small gas discharge and excellent buffer effect. CONSTITUTION:The stem 3 for an electrode mount is airtightly connected to a connection tube 4. Into the connection tube 4, a power supply line 5 is inserted. The connection tube 4 and a housing 9 are sealed airtight in a vacuum with O rings 21, 22. The gap between the inner wall of the housing 9 and an end part of the discharge lamp, which are integrally formed with a flange 2, is buried by filling a metallic foil 28 to conduct heat easily from the end part of the discharge lamp to the housing 9. This shortens the discharge time, so that the outer wall of the hosing 9 has a proper temperature control effect on the vapor pressure control of the luminescent metal in the discharge lamp. As the power supply line 5 to the discharge lamp is in the air, no electric breakdown is expected between the power supply lines 5.

12. 发明专利

JPS61123829A Device for reading radiation image information 失效
标题翻译：读取辐射图像信息的装置
公开(公告)号：JPS61123829A
公开(公告)日：1986-06-11
申请号：JP24443584
申请日：1984-11-21
申请人： Hitachi Ltd
发明人： KANO TAKESHI , TAKAHASHI TETSUHIKO , ADAKA SABURO , YOKOUCHI HISATAKE , UMETANI KEIJI , OKAJIMA KENICHI , SUZUKI RYUICHI
IPC分类号： G01T1/00 , A61B6/00 , C09K11/08 , C09K11/61 , G03B42/02 , G21K4/00
摘要： PURPOSE: To obtain image information of high quality with a small dose of radiation by converting radiation image information recorded on a CsI case stimulative fluorescent screen into emission intensity by optical scanning.
CONSTITUTION: A stimulative fluorescent screen of 200μm thickness formed by vapor-depositing CsI powder on an Al substrate has fine cracks in a direction perpendicular to the surface of the screen, so it is optically transparent in the direction and is not transparent in a direction parallel to the surface of the screen. X-rays from a radiation generating source 1 are irradiated on the screen 3 cooled to the temp. of liq. nitrogen through a object 2, and stimulated light emited by scanning the surface of the screen 2 with semiconductor laser light 5 is introduced into a photomultiplier 6 and displayed at an image processing and displaying part 7. The scattering of the light beam 5 for reading is reduced, giving an image having high space resolution, so image information of high quality can be obtd. with a small dose of radiation.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过将通过光学扫描将记录在CsI情况刺激荧光屏上的辐射图像信息转换为发射强度，以小剂量的辐射获得高质量的图像信息。构成：通过在Al衬底上气相沉积CsI粉末形成的200μm厚度的刺激荧光屏在垂直于屏幕表面的方向上具有细微的裂纹，因此在方向上是光学透明的，并且在平行方向上不透明到屏幕的表面。来自辐射发生源1的X射线照射在冷却至温度的屏幕3上。的liq。通过物体2的氮气和通过用半导体激光5扫描屏幕2的表面而发出的受激光被引入到光电倍增管6中并在图像处理和显示部分7处显示。用于读取的光束5的散射是减少，给出具有高空间分辨率的图像，因此可以看出高质量的图像信息。用少量的辐射。

13. 发明专利

JPH0234192B2 失效
公开(公告)号：JPH0234192B2
公开(公告)日：1990-08-01
申请号：JP10252980
申请日：1980-07-28
申请人： HITACHI LTD
发明人： ISHIOKA YOSHIO , SHIMOMOTO TAIJI , IMAMURA YOSHINORI , ADAKA SABURO , TANAKA YASUO , MATSUBARA HIROKAZU , TAKASAKI YUKIO , MARUYAMA EIICHI
IPC分类号： G03G5/08 , B05D3/02 , B05D3/04 , H01J9/233 , H01L21/205 , H01L31/04 , H01L31/08 , H01L31/10

14. 发明专利

JPS6340014B2 失效
公开(公告)号：JPS6340014B2
公开(公告)日：1988-08-09
申请号：JP1154783
申请日：1983-01-28
申请人： HITACHI LTD
发明人： ADAKA SABURO , MARUYAMA EIICHI , INAO KYOHISA , IMAMURA YOSHINORI , TSUKADA TOSHIHISA , TAKASAKI YUKIO , HIRAI TADAAKI
IPC分类号： H01J29/45 , H01J31/49

15. 发明专利

JPS62137600A RADIATION PICTURE RECORDER 失效
公开(公告)号：JPS62137600A
公开(公告)日：1987-06-20
申请号：JP28141985
申请日：1985-12-11
申请人： HITACHI LTD
发明人： TAKAHASHI TETSUHIKO , OKAJIMA KENICHI , KANO TAKESHI , ADAKA SABURO , UMETANI KEIJI , YOKOUCHI HISATAKE
IPC分类号： G21K4/00 , G01T1/00 , G03B42/02

16. 发明专利

JPS6220329A METHOD AND DEVICE FOR FORMING INSULATING FILM 失效
公开(公告)号：JPS6220329A
公开(公告)日：1987-01-28
申请号：JP15817085
申请日：1985-07-19
申请人： HITACHI LTD
发明人： ADAKA SABURO
IPC分类号： H01L21/316
摘要： PURPOSE:To form a dense insulating film at low temperature by using a reaction at least one type of hydrogenide of metal or organic metal of gas state at ambient temperature with steam or oxygen containing steam. CONSTITUTION:N2 gas is bubbled to transport steam, oxidative gas (H2O) is fed to a reaction chamber 3, SiH4 gas is fed by a pipe 1 to oxidize the SiH4 gas on a substrate holder 4 to precipitate SiO2 on a GaAs substrate 6. Thus, when a reaction system is SiH4-H2O, the coating speed of the SiO2 is accelerated approx. double as compared with a conventional SiH4-O2, and activating energy DELTAEa becomes 0. Thus, since a region having no temperature dependency of the coating speed is shifted to the low temperature side in this reaction system, technological merit can be obtained.

17. 发明专利

JPS5822899B2 失效
公开(公告)号：JPS5822899B2
公开(公告)日：1983-05-12
申请号：JP10006078
申请日：1978-08-18
申请人： HITACHI LTD
发明人： TSUKADA TOSHIHISA , MARUYAMA EIICHI , UMAJI TOORU , ADAKA SABURO , IMAMURA YOSHINORI , SASANO AKIRA , KUBO SEIJI , KOIKE NORIO , NAGAHARA SHUSAKU
IPC分类号： H01L27/146 , H01L31/00 , H04N5/30 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/372 , H04N5/374

18. 发明专利

JPH0456034A DISCHARGE LAMP FOR VACUUM AND LIGHT CVD DEVICE 失效
公开(公告)号：JPH0456034A
公开(公告)日：1992-02-24
申请号：JP16459990
申请日：1990-06-21
申请人： HITACHI LTD , BABCOCK HITACHI KK
发明人： KAWASUMI KENICHI , INADA AKIISA , ADAKA SABURO , SHICHIDA HIROYUKI
IPC分类号： C04B28/06 , H01J5/50 , H01J61/88
摘要： PURPOSE:To prevent space dielectric breakdown between power supply lines even when the supply voltage to a discharge lamp is heightened, by locating power supply lines outside of a vacuum region, and taking out to the atmosphere outside of the vacuum region. CONSTITUTION:Temp. of cement 28 contacting the end of a discharge lamp is sensed by a thermo-couple 31, and a sensing signal is fed to a temp. adjuster 35. In the temp. adjuster 35, the rate of flow of the coolant for a water cooling part 32 is set previously in order to adjust the temp. at the coldest point to 50-55 deg.C, and an operational signal is given to a solenoid valve 34. The temp. at the side wall of an accommodation part 9 is adjusted with this rate of flow of the coolant. In a vacuum vessel, power supply lines 5 are put in thin tube 4 and arranged in the condition exposed in the outside air external to the accommodation part 9. Even though a high frequency voltage is applied to the discharge lamp, therefore, there is no risk of space discharge breakdown between power supply line 5.

19. 发明专利

JPH03150842A MANUFACTURE OF COMPOUND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03150842A
公开(公告)日：1991-06-27
申请号：JP28891889
申请日：1989-11-08
申请人： HITACHI LTD , HITACHI VLSI ENG , BABCOCK HITACHI KK
发明人： MIYAZAKI MASARU , ODA HIROTO , ADAKA SABURO
IPC分类号： H01L21/265 , H01L21/316
摘要： PURPOSE:To manufacture a FET and a resistance element having high reproducibility and small irregularity in characteristics by preliminarily heating a compound semiconductor crystal in gas containing no oxygen or in vacuum, and then covering a protective film by using a covering unit so that the quality of the film becomes constant immediately after coating. CONSTITUTION:Si ions are implanted to form an active layer 2 on a GaAs substrate crystal 1, this wafer is set in a CVD device by an optical excitation, and raised at its temperature in vacuum. After SiH4 and NO2 gases are fed and sufficiently steadily maintained, the surface of the wafer is radiated with a UV light, and covered in a predetermined thickness with an SiO2 film 7. Thus, reaction of GaAs with an SiO2 boundary is suppressed, and controllability of forming an active layer by ion implanting is improved. Thus, a FETYF resistance element having less irregularity in characteristics can be manufactured.

20. 发明专利

JPS63245960A FIELD EFFECT SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63245960A
公开(公告)日：1988-10-13
申请号：JP26964786
申请日：1986-11-14
申请人： HITACHI LTD
发明人： MIZUTA HIROSHI , MORI MITSUHIRO , YANOKURA EIJI , ADAKA SABURO , TAKAHASHI SUSUMU
IPC分类号： H01L29/812 , H01L21/338 , H01L29/80
摘要： PURPOSE:To improve a gate reverse dielectric strength and a drain dielectric strength by forming a P-type layer on a boundary between a semi-insulating substrate and an active layer from under a gate electrode to under a drain electrode to increase a gate capacity and to alleviate a gate electrode end electric field without reducing a mutual conductance. CONSTITUTION:A shallow P-type GaAs layer 6 is formed by ion implanting of Be, Mg or the like on that part of a boundary between a semi-insulating substrate 1 and an active layer 5 extending from under a gate electrode 9 to under a drain electrode 8. The layer 6 alleviates an electric field concentration at the end of the gate electrode to have an action to prevent the gate and the drain from avalanche-multiplying therebetween. Thus, the dielectric strength of the gate electrode and the dielectric strength of the drain are improved. Since a depleted layer is not formed on the surface between the gate and the drain, the gate capacity is not increased and the mutual conductance is not reduced.

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